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JOURNAL OF APPLIED PHYSICS, 95(3), 1572–1576. https://doi.org/10.1063/1.1636526 Burnette, J. E., Himmerlich, M., & Nemanich, R. J. (2004). Silicide contacts for Si/Ge devices. In Silicide technology for integrated circuits. https://doi.org/10.1049/pbep005e_ch7 Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235. https://doi.org/10.1002/pssb.200404938 Yang, W. C., Ade, H., & Nemanich, R. J. (2004). Stability and dynamics of Pt-Si liquid microdroplets on Si(001). PHYSICAL REVIEW B, 69(4). https://doi.org/10.1103/physrevb.69.045421 Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Cross, J. S. (2004). 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APPLIED PHYSICS LETTERS, 83(23), 4740–4742. https://doi.org/10.1063/1.1632031 Fitting, L., Zeman, M. C., Yang, W. C., & Nemanich, R. J. (2003). Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001). JOURNAL OF APPLIED PHYSICS, 93(7), 4180–4184. https://doi.org/10.1063/1.1557787 Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424 Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Tagantsev, A. K., Cross, J. S., & Tsukada, M. (2003). Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors. APPLIED PHYSICS LETTERS, 83(4), 728–730. https://doi.org/10.1063/1.1593830 Yang, W. C., Rodriguez, B. J., Park, M., Nemanich, R. J., Ambacher, O., & Cimalla, V. (2003). 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JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771. https://doi.org/10.1557/JMR.2003.0106 Jeon, H., Won, H., Kim, Y., Lee, J., & Nemanich, R. J. (2002). Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100). Journal of the Korean Physical Society, 40(5), 903–907. Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578 Oh, J., & Nemanich, R. J. (2002). Current-voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy. JOURNAL OF APPLIED PHYSICS, 92(6), 3326–3331. https://doi.org/10.1063/1.1499545 Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films. JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127 Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1726–1731. https://doi.org/10.1116/1.1493785 Kock, F. A. M., Garguilo, J. M., Brown, B., & Nemanich, R. J. (2002). Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films. DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 774–779. https://doi.org/10.1016/S0925-9635(02)00006-7 Gruverman, A., Rodriguez, B. J., Nemanich, R. J., & Kingon, A. I. (2002). Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films. JOURNAL OF APPLIED PHYSICS, 92(5), 2734–2739. https://doi.org/10.1063/1.1497698 Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. JOURNAL OF APPLIED PHYSICS, 91(2), 732–738. https://doi.org/10.1063/1.1424060 Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002, December). Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials. JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 252–258. https://doi.org/10.1016/S0022-0248(02)01749-9 Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Ambacher, O. (2002). Piezoresponse force microscopy for polarity imaging of GaN. APPLIED PHYSICS LETTERS, 80(22), 4166–4168. https://doi.org/10.1063/1.1483117 Oh, J., Meunier, V., Ham, H., & Nemanich, R. J. (2002). Single electron tunneling of nanoscale TiSi2 islands on Si. JOURNAL OF APPLIED PHYSICS, 92(6), 3332–3337. https://doi.org/10.1063/1.1499531 Popov, M., Kyotani, M., Nemanich, R. J., & Koga, Y. (2002). 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D., Yang, W. C., & Nemanich, R. J. (2001). Photon energy dependence of contrast in photoelectron emission microscopy of Si devices. APPLIED PHYSICS LETTERS, 78(22), 3547–3549. https://doi.org/10.1063/1.1376151 Gracin, D., Bogdanovic, I., Borjanovic, V., Jaksic, M., Pastuovic, Z., Dutta, J. M., … Nemanich, R. J. (2001, May 14). Quantitative analysis of a-Si1-xCx : H thin films by vibrational spectroscopy and nuclear methods. VACUUM, Vol. 61, pp. 303–308. https://doi.org/10.1016/S0042-207X(01)00134-8 Gracin, D., Borjanovic, V., Vlahovic, B., Sunda-Meya, A., Patterson, T. M., Dutta, J. M., … Roedern, B. (2001, December 21). Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, Vol. 475, pp. 635–639. https://doi.org/10.1016/S0168-9002(01)01578-9 Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. 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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 1776–1784. https://doi.org/10.1116/1.591471 Bergman, L., Dutta, M., Stroscio, M. A., Komirenko, S. M., Nemanich, R. J., Eiting, C. J., … Dupuis, R. D. (2000). Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice. APPLIED PHYSICS LETTERS, 76(15), 1969–1971. https://doi.org/10.1063/1.126225 Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087. https://doi.org/10.1116/1.1303733 Christman, J. A., Kim, S. H., Maiwa, H., Maria, J. P., Rodriguez, B. J., Kingon, A. I., & Nemanich, R. J. (2000). Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy. JOURNAL OF APPLIED PHYSICS, 87(11), 8031–8034. https://doi.org/10.1063/1.373492 Carter, R. J., Hauser, JR, & Nemanich, R. J. (2000). 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