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Journal of Applied Physics, 94(9), 5720–5725. https://doi.org/10.1063/1.1618355 Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). Journal of Applied Physics, 94(5), 3163–3172. https://doi.org/10.1063/1.1596369 Kobashi, K., Nishibayashi, Y., Yokota, Y., Ando, Y., Tachibana, T., Kawakami, N., … Sakai, T. (2003). R&D of diamond films in the Frontier Carbon Technology Project and related topics. Diamond and Related Materials, 12(3-7), 233–240. https://doi.org/10.1016/S0925-9635(02)00298-4 Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003). Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'. Journal of Applied Physics, 93(6), 3679. https://doi.org/10.1063/1.1542911 Kock, F. A. M., Garguilo, J. M., Nemanich, R. 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Journal of the Korean Physical Society, 40(5), 903–907. Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. Journal of Applied Physics, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578 Oh, J., & Nemanich, R. J. (2002). Current-voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy. Journal of Applied Physics, 92(6), 3326–3331. https://doi.org/10.1063/1.1499545 Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films. Journal of Applied Physics, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127 Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). 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Applied Physics Letters, 78(22), 3547–3549. https://doi.org/10.1063/1.1376151 Gracin, D., Bogdanovic, I., Borjanovic, V., Jaksic, M., Pastuovic, Z., Dutta, J. M., … Nemanich, R. J. (2001). Quantitative analysis of a-Si1-xCx: H thin films by vibrational spectroscopy and nuclear methods. Vacuum, 61(2-4), 303–308. https://doi.org/10.1016/S0042-207X(01)00134-8 Gracin, D., Borjanovic, V., Vlahovic, B., Sunda-Meya, A., Patterson, T. M., Dutta, J. M., … Roedern, B. (2001). Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL. Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 475(1-3), 635–639. https://doi.org/10.1016/S0168-9002(01)01578-9 Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001). Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys. 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J., Hauser, J. R., & Nemanich, R. J. (2000). Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces. Journal of the Electrochemical Society, 147(9), 3512–3518. https://doi.org/10.1149/1.1393929 Kim, S. H., Kim, D. J., Lee, K. M., Park, M., Kingon, A. I., Nemanich, R. J., … Streiffer, S. K. (1999). An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique. Journal of Materials Research, 14(11), 4395–4401. https://doi.org/10.1557/JMR.1999.0594 King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. Journal of the Electrochemical Society, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494 Porto, A. O., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1999). Cobalt suicide formation on 6H silicon carbide. 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