Robert Nemanich

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Band alignment at AlN/Si (111) and (001) interfaces. Journal of Applied Physics, 118(4). https://doi.org/10.1063/1.4927515

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Cleaning of pyrolytic hexagonal boron nitride surfaces. Surface and Interface Analysis, 47(7), 798–803. https://doi.org/10.1002/sia.5781

King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. (2015). Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5). https://doi.org/10.1116/1.4921526

King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. (2015). Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5). https://doi.org/10.1116/1.4926733

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface. Physica Status Solidi. B, Basic Solid State Physics, 252(2), 391–396. https://doi.org/10.1002/pssb.201451340

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(5). https://doi.org/10.1116/1.4891650

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(6). https://doi.org/10.1116/1.4894816

King, S. W., Nemanich, R. J., & Davis, R. F. (2014). Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001). Applied Physics Letters, 105(8). https://doi.org/10.1063/1.4894010

Tedesco, J. L., Rowe, J. E., & Nemanich, R. J. (2010). Titanium suicide islands on atomically clean Si(100): Identifying single electron tunneling effects. Journal of Applied Physics, 107(12). https://doi.org/10.1063/1.3437049

Tedesco, J. L., Rowe, J. E., & Nemanich, R. J. (2009). Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100). Journal of Applied Physics, 105(8). https://doi.org/10.1063/1.3100212

Sakon, J. J., Ribeill, G. J., Garguilo, J. M., Perkins, J., keith, & Nemanich, R. J. (2009). Fluorescence quenching effects of nanocrystalline diamond surfaces. Diamond and Related Materials, 18(1), 82–87. https://doi.org/10.1016/j.diamond.2008.10.028

King, S. W., Davis, R. F., & Nemanich, R. J. (2009). [Review of Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfaces]. Surface Science, 603(20), 3104–3118. https://doi.org/10.1016/j.susc.2009.08.023

Smith, J. R., Bilbro, G. L., & Nemanich, R. J. (2009). Theory of space charge limited regime of thermionic energy converter with negative electron affinity emitter. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 27(3), 1132–1141. https://doi.org/10.1116/1.3125282

Kulkarni, P., Porter, L. M., Koeck, F. A. M., Tang, Y. J., & Nemanich, R. J. (2008). Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films. Journal of Applied Physics, 103(8). https://doi.org/10.1063/1.2908884

King, S. W., Davis, R. F., & Nemanich, R. J. (2008). Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces. Surface Science, 602(2), 405–415. https://doi.org/10.1016/j.susc.2007.10.034

Chromik, R. R., Winfrey, A. L., Luning, J., Nemanich, R. J., & Wahl, K. J. (2008). Run-in behavior of nanocrystalline diamond coatings studied by in situ tribometry. Wear, 265(3-4), 477–489. https://doi.org/10.1016/j.wear.2007.11.023

Kong, X. H., Rowe, J. E., & Nemanich, R. J. (2008). Single molecule measurements with photoelectron emission microscopy. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(4), 1461–1465. https://doi.org/10.1116/1.2932094

Brukman, M. J., Gao, G. T., Nemanich, R. J., & Harrison, J. A. (2008). Temperature dependence of single-asperity diamond-diamond friction elucidated using AFM and MD Simulations. Journal of Physical Chemistry. C, 112(25), 9358–9369. https://doi.org/10.1021/jp711959e

Burnette, J. E., Kiesel, S., Sayers, D. E., & Nemanich, R. J. (2008). Titanium Interlayer Mediated Epitaxy of CoSi2 on Si1-xGex. Thin Solid Films, 516(8), 1809–1817. https://doi.org/10.1016/j.tsf.2007.08.045

Yang, W. C., Zeman, M., & Nemanich, R. J. (2007). Coarsening dynamics of nanoscale Ti-silicide islands on Si surfaces. Journal of the Korean Physical Society, 50(3), 575–580. https://doi.org/10.3938/jkps.50.575

Smith, J. R., Bilbro, G. L., & Nemanich, R. J. (2007). Considerations for a high-performance thermionic energy conversion device based on a negative electron affinity emitter. Physical Review. B, Condensed Matter and Materials Physics, 76(24). https://doi.org/10.1103/physrevb.76.245327

Neeyakorn, W., Varma, M., Jaye, C., Burnette, J. E., Lee, S. M., Nemanich, R. J., … Krim, J. (2007). Dynamics of vapor-phase organophosphates on silicon and OTS. Tribology Letters, 27(3), 269–276. https://doi.org/10.1007/s11249-007-9224-y

Garguilo, J., Hong, L., Edwards, G. S., Nemanich, R. J., & Simon, J. D. (2007). The surface oxidation potential of melanosomes measured by free electron laser-photoelectron emission microscopy. Photochemistry and Photobiology, 83(3), 692–697. https://doi.org/10.1562/2006-09-11-RA-1037

Hong, L., Garguilo, J., Anzaldi, L., Edwards, G. S., Nemanich, R. J., & Simon, J. D. (2006). Age-dependent photoionization thresholds of melanosomes and lipofuscin isolated from human retinal pigment epithelium cells. Photochemistry and Photobiology, 82(6), 1475–1481. https://doi.org/10.1562/2006-03-14-RA-846

Koeck, F. A. M., Obraztsov, A. N., & Nemanich, R. J. (2006). Electron emission microscopy of nano-crystal graphitic films as high current density electron sources. Diamond and Related Materials, 15(4-8), 875–879. https://doi.org/10.1016/j.diamond.2005.12.051

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2006). Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure. Journal of Applied Physics, 99(6). https://doi.org/10.1063/1.2181282

Koeck, F. A. M., & Nemanich, R. J. (2006). Emission characterization from nitrogen-doped diamond with respect to energy conversion. Diamond and Related Materials, 15(2-3), 217–220. https://doi.org/10.1016/j.diamond.2005.08.045

Hanson, J. N., Rodriguez, B. J., Nemanich, R. J., & Gruverman, A. (2006). Fabrication of metallic nanowires on a ferroelectric template via photochemical reaction. Nanotechnology, 17(19), 4946–4949. https://doi.org/10.1088/0957-4484/17/19/028

Koeck, F. A. M., & Nemanich, R. J. (2006). Field penetration and its contribution to field enhanced thermionic electron emission from nanocrystalline diamond films. Diamond and Related Materials, 15(11-12), 2006–2009. https://doi.org/10.1016/j.diamond.2006.08.002

Li, X. L., Perkins, J., Collazo, R., Nemanich, R. J., & Sitar, Z. (2006). Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD. Diamond and Related Materials, 15(11-12), 1784–1788. https://doi.org/10.1016/j.diamond.2006.09.008

Bilbro, G. L., & Nemanich, R. J. (2006). Localized emission from flat diamond cathodes. Diamond and Related Materials, 15(9), 1418–1423. https://doi.org/10.1016/j.diamond.2005.10.045

Koeck, F. A. M., Zumer, M., Nemanic, V., & Nemanich, R. J. (2006). Photo and field electron emission microscopy, from sulfur doped nanocrystalline diamond films. Diamond and Related Materials, 15(4-8), 880–883. https://doi.org/10.1016/j.diamond.2006.01.008

Ye, T., Hong, L., Garguilo, J., Pawlak, A., Edwards, G. S., Nemanich, R. J., … Simon, J. D. (2006). Photoionization thresholds of melanins obtained from free electron laser-photoelectron emission microscopy, femtosecond transient absorption spectroscopy and electron paramagnetic resonance measurements of oxygen photoconsumption. Photochemistry and Photobiology, 82(3), 733–737. https://doi.org/10.1562/2006-01-02-RA-762

Smith, J. R., Nemanich, R. J., & Bilbro, G. L. (2006). The  effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter. Diamond and Related Materials, 15(4-8), 870–874. https://doi.org/10.1016/j.diamond.2005.12.057

Bush, W. D., Garguilo, J., Zucca, F. A., Albertini, A., Zecca, L., Edwards, G. S., … Simon, J. D. (2006). The surface oxidation potential of human neuromelanin reveals a spherical architecture with a pheomelanin core and a eumelanin surface. Proceedings of the National Academy of Sciences of the United States of America, 103(40), 14785–14789. https://doi.org/10.1073/pnas.0604010103

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006). Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy. Journal of Applied Physics, 99(2). https://doi.org/10.1063/1.2163984

Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. (2006). Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (vol 99, pg 023519, 2006). Journal of Applied Physics, Vol. 99. https://doi.org/10.1063/1.2201707

Smith, J. R., Bilbro, G. L., & Nemanich, R. J. (2006). Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion device. Diamond and Related Materials, 15(11-12), 2082–2085. https://doi.org/10.1016/j.diamond.2006.09.011

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005). AlN bulk crystals grown on SiC seeds. Journal of Crystal Growth, 281(1), 68–74. https://doi.org/10.1016/j.jcrysgro.2005.03.012

Edwards, G. S., Allen, S. J., Haglund, R. F., Nemanich, R. J., Redlich, B., Simon, J. D., & Yang, W. C. (2005). Applications of free-electron lasers in the biological and material sciences. Photochemistry and Photobiology, 81(4), 711–735. https://doi.org/10.1562/2004-11-08-IR-363R.1

Dehoff, C., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Gruverman, A., & Cross, J. S. (2005). Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors. Review of Scientific Instruments, 76(2). https://doi.org/10.1063/1.1850652

Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., … Schlom, D. G. (2005). Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. Microelectronics Reliability, 45(06-May), 827–830. https://doi.org/10.1016/j.microrel.2004.11.038

Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J., … Afanase'v, V. V. (2005). Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings. Thin Solid Films, 486(02-Jan), 129–135. https://doi.org/10.1016/j.tsf.2004.11.233

Lucovsky, G., Fulton, C. C., Zhang, Y., Zou, Y., Luning, J., Edge, L. F., … Rogers, B. R. (2005). Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect. IEEE Transactions on Device and Materials Reliability, 5(1), 65–83. https://doi.org/10.1109/TDMR.2005.845804

Gruverman, A., Rodriguez, B. J., Dehoff, C., Waldrep, J. D., Kingon, A. I., Nemanich, R. J., & Cross, J. S. (2005). Direct studies of domain switching dynamics in thin film ferroelectric capacitors. Applied Physics Letters, 87(8). https://doi.org/10.1063/1.2010605

Rodriguez, B. J., Nemanich, R. J., Kingon, A., Gruverman, A., Kalinin, S. V., Terabe, K., … Kitamura, K. (2005). Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy. Applied Physics Letters, 86(1). https://doi.org/10.1063/1.1845594

Koeck, F. A. M., Garguilo, J. M., & Nemanich, R. J. (2005). Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films. Diamond and Related Materials, 14(07-Mar), 704–708. https://doi.org/10.1016/j.diamond.2004.12.056

Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005). Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations. Journal of Electron Spectroscopy and Related Phenomena, 144, 917–919. https://doi.org/10.1016/j.elspec.2005.01.251

Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2005). Formation of stable titanium germanosilicide thin films on Si1-xGex. Journal of Applied Physics, 97(11). https://doi.org/10.1063/1.1923164

Wang, Y. Y., Gupta, S., Garguilo, J. M., Liu, Z. J., Qin, L. C., & Nemanich, R. J. (2005). Growth and field emission properties of small diameter carbon nanotube films. Diamond and Related Materials, 14(07-Mar), 714–718. https://doi.org/10.1016/j.diamond.2004.10.003

Scheer, J. A., Wieser, M., Wurz, P., Bochsler, P., Hertzberg, E., Fuselier, S. A., … Schleberger, M. (2005). High negative ion yield from light molecule scattering. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 230(Apr-05), 330–339. https://doi.org/10.1016/j.nimb.2004.12.063

Wang, Y. Y., Gupta, S., Nemanich, R. J., Liu, Z. J., & Qin, L. C. (2005). Hollow to bamboolike internal structure transition observed in carbon nanotube films. Journal of Applied Physics, 98(1). https://doi.org/10.1063/1.1946198

Gupta, S., Wang, Y. Y., Garguilo, J. M., & Nemanich, R. J. (2005). Imaging temperature-dependent field emission from carbon nanotube films: Single versus multiwalled. Applied Physics Letters, 86(6). https://doi.org/10.1063/1.1850616

Wang, Y. Y., Gupta, S., Liang, M., & Nemanich, R. J. (2005). Increased field-emission site density from regrown carbon nanotube films. Journal of Applied Physics, 97(10). https://doi.org/10.1063/1.1897836

Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Cross, J. S. (2005). Investigation of the mechanism of polarization switching in ferroelectric capacitors by three- dimensional piezoresponse force microscopy. Applied Physics. A, Materials Science & Processing (Online), 80(1), 99–103. https://doi.org/10.1007/s00339-004-2925-2

Monteiro-Riviere, N. A., Nemanich, R. J., Inman, A. O., Wang, Y. Y. Y., & Riviere, J. E. (2005). Multi-walled carbon nanotube interactions with human epidermal keratinocytes. Toxicology Letters, 155(3), 377–384. https://doi.org/10.1016/j.toxlet.2004.11.004

Wieser, M., Wurz, P., Bochsler, P., Moebius, E., Quinn, J., Fuselier, S. A., … Nemanich, R. J. (2005). NICE: an instrument for direct mass spectrometric measurement of interstellar neutral gas. Measurement Science & Technology, 16(8), 1667–1676. https://doi.org/10.1088/0957-0233/16/8/019

Samokhvalov, A., Hong, L., Liu, Y., Garguilo, J., Nemanich, R. J., Edwards, G. S., & Simon, J. D. (2005). Oxidation potentials of human eumelanosomes and plheomelanosomes. Photochemistry and Photobiology, 81(1), 145–148. https://doi.org/10.1562/2004-07-23-RC-245.1

Yang, W. C., Rodriguez, B. J., Gruverman, A., & Nemanich, R. J. (2005). Photo electron emission microscopy of polarity-patterned materials. Journal of Physics. Condensed Matter, 17(16), S1415–1426. https://doi.org/10.1088/0953-8984/17/16/012

Hartman, J. D., Naniwae, K., Petrich, C., Nemanich, R., & Davis, R. F. (2005). Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN. Applied Surface Science, 242(04-Mar), 428–436. https://doi.org/10.1016/j.apsusc.2004.09.021

Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. (2005). Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(1), 72–77. https://doi.org/10.1116/1.1830497

Rodriguez, B. J., Yang, W. C., Nemanich, R. J., & Gruverman, A. (2005). Scanning probe investigation of surface charge and surface potential of GaN-based heterostructures. Applied Physics Letters, 86(11). https://doi.org/10.1063/1.1869535

Wieser, M., Wurz, P., Nemanich, R. J., & Fuselier, S. A. (2005). Secondary electron emission of chemical-vapor-deposited diamond by impact of slow H+, D+, H-2(+), C+, O+, and O-2(+) ions. Journal of Applied Physics, 98(3). https://doi.org/10.1063/1.1996855

Fitting, L., Ware, M. E., Haywood, J. R., Walter, J. J. H., & Nemanich, R. J. (2005). Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices. Journal of Applied Physics, 98(2). https://doi.org/10.1063/1.1993751

Coppa, B. J., Fulton, C. C., Kiesel, S. M., Davis, R. F., Pandarinath, C., Burnette, J. E., … Smith, D. J. (2005). Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces. Journal of Applied Physics, 97(10). https://doi.org/10.1063/1.1898436

Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. (2005). Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides. Journal of Electron Spectroscopy and Related Phenomena, 144, 913–916. https://doi.org/10.1016/j.elspec.2005.01.098

Koeck, F. A. M., & Nemanich, R. J. (2005). Sulfur doped nanocrystalline diamond films as field enhancement based thermionic emitters and their role in energy conversion. Diamond and Related Materials, 14(12-Nov), 2051–2054. https://doi.org/10.1016/j.diamond.2005.09.001

Monteiro-Riviere, N. A., Inman, A. O., Wang, Y. Y., & Nemanich, R. J. (2005). Surfactant effects on carbon nanotube interactions with human epidermal keratinocytes. Nanomedicine : Nanotechnology, Biology and Medicine, 1(4), 293–299. https://doi.org/10.1016/j.nano.2005.10.007

Castro-Colin, M., Donner, W., Moss, S. C., Islam, Z., Sinha, S. K., Nemanich, R., … Shulli, T. (2005). Synchrotron x-ray studies of vitreous SiO2 over Si(001). I. Anisotropic glass contribution. Physical Review. B, Condensed Matter and Materials Physics, 71(4). https://doi.org/10.1103/physrevb.71.045310

Castro-Colin, M., Donner, W., Moss, S. C., Islam, Z., Sinha, S. K., & Nemanich, R. (2005). Synchrotron x-ray studies of vitreous SiO2 over Si(001). II. Crystalline contribution. Physical Review. B, Condensed Matter and Materials Physics, 71(4). https://doi.org/10.1103/physrevb.71.045311

Garguilo, J. M., Koeck, F. A. M., Nemanich, R. J., Xiao, X. C., Carlisle, J. A., & Auciello, O. (2005). Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays. Physical Review, 72(16). https://doi.org/10.1103/physrevb.72.165404

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). A  novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices. Microelectronic Engineering, 72(04-Jan), 257–262. https://doi.org/10.1016/j.mee.2003.12.047

Ware, M. E., Nemanich, R. J., Gray, J. L., & Hull, R. (2004). Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates. Journal of Applied Physics, 95(1), 115–122. https://doi.org/10.1063/1.1630362

Kock, E. M., Garguilo, J. M., & Nemanich, R. J. (2004). Direct correlation of surface morphology with electron emission sites for intrinsic nanocrystalline diamond films. Diamond and Related Materials, 13(08-Apr), 1022–1025. https://doi.org/10.1016/j.diamond.2004.01.008

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers. Surface Science, 566(Sep 20 2004), 1185–1189. https://doi.org/10.1016/j.susc.2004.06.084

Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. (2004). Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers. Applied Surface Science, 234(37990), 240–245. https://doi.org/10.1016/j.apsusc.2004-05.076

Wang, Y. Y., Tang, G. Y., Koeck, F. M., Brown, B., Garguilo, J. M., & Nemanich, R. J. (2004). Experimental studies of the formation process and morphologies of carbon nanotubes with bamboo mode structures. Diamond and Related Materials, 13(08-Apr), 1287–1291. https://doi.org/10.1016/j.diamond.2004.01.009

Garguilo, J. M., Davis, B. A., Buddie, M., Kock, F. A. M., & Nemanich, R. J. (2004). Fibrinogen adsorption onto microwave plasma chemical vapor deposited diamond films. Diamond and Related Materials, 13(08-Apr), 595–599. https://doi.org/10.1016/j.diamond.2003.10.008

Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004). In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces. Journal of Applied Physics, 95(10), 5856–5864. https://doi.org/10.1063/1.1695596

Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. (2004). Interface instabilities and electronic properties of ZrO2 on silicon (100). Journal of Applied Physics, 96(5), 2665–2673. https://doi.org/10.1063/1.1776313

Koeck, F. A. M., Garguilo, J. M., & Nemanich, R. J. (2004). On the thermionic emission from nitrogen-doped diamond films with respect to energy conversion. Diamond and Related Materials, 13(12-Nov), 2052–2055. https://doi.org/10.1016/j.diamond.2004.06.027

Samokhvalov, A., Garguilo, J., Yang, W. C., Edwards, G. S., Nemanich, R. J., & Simon, J. D. (2004). Photoionization threshold of eumelanosomes determined using UV free electron laser - Photoelectron emission microscopy. https://doi.org/10.1021/jp046701q

Yang, W. C., Rodriguez, B. J., Gruverman, A., & Nemanich, R. J. (2004). Polarization-dependent electron affinity of LiNbO3 surfaces. Applied Physics Letters, 85(12), 2316–2318. https://doi.org/10.1063/1.1790604

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2004). Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100). Applied Physics Letters, 84(4), 580–582. https://doi.org/10.1063/1.1639944

Prawer, S., & Nemanich, R. J. (2004). Raman spectroscopy of diamond and doped diamond. Philosophical Transactions of the Royal Society of London. Series A, Mathematical, Physical and Engineering Sciences, 362(1824), 2537–2565. https://doi.org/10.1098/rsta.2004.1451

Wang, Y. Y., Gupta, S., & Nemanich, R. J. (2004). Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition. Applied Physics Letters, 85(13), 2601–2603. https://doi.org/10.1063/1.1796529

Yang, W. C., Ade, H., & Nemanich, R. J. (2004). Shape stability of TiSi2 islands on Si (111). Journal of Applied Physics, 95(3), 1572–1576. https://doi.org/10.1063/1.1636526

Burnette, J. E., Himmerlich, M., & Nemanich, R. J. (2004). Silicide contacts for Si/Ge devices. In Silicide technology for integrated circuits. https://doi.org/10.1049/pbep005e_ch7

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004). Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides. Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235. https://doi.org/10.1002/pssb.200404938

Yang, W. C., Ade, H., & Nemanich, R. J. (2004). Stability and dynamics of Pt-Si liquid microdroplets on Si(001). Physical Review. B, Condensed Matter and Materials Physics, 69(4). https://doi.org/10.1103/physrevb.69.045421

Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Cross, J. S. (2004). Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy. Journal of Applied Physics, 95(4), 1958–1962. https://doi.org/10.1063/1.1638889

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., & Ade, H. (2004). X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138. https://doi.org/10.1116/1.1771670

Yang, W. C., Zeman, M., Ade, H., & Nemanich, R. J. (2003). Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface. Physical Review Letters, 90(13), 136102–136101. https://doi.org/10.1103/physrevlett.90.136102

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics, 94(11), 7155–7158. https://doi.org/10.1063/1.1618374

Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. Journal of Applied Physics, 94(6), 3949–3954. https://doi.org/10.1063/1.1601314

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003). Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400. https://doi.org/10.1116/1.1539080

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003). Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag. Journal of Applied Physics, 94(6), 3939–3948. https://doi.org/10.1063/1.1598630

Lucovsky, G., Raynor, G. B., Zhang, Y., Fulton, C. C., Nemanich, R. J., Appel, G., … Whitten, J. L. (2003). Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices. Applied Surface Science, 212(2003 May 15), 563–569. https://doi.org/10.1016/S0169-4332(03)00055-2

Kobashi, K., Tachibana, T., Yokota, Y., Kawakami, N., Hayashi, K., Yamamoto, K., … Nemanich, R. J. (2003). Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct current bias and field electron- emission properties. Journal of Materials Research, 18(2), 305–326. https://doi.org/10.1557/JMR.2003.0042

Coppa, B. J., Davis, R. F., & Nemanich, R. J. (2003). Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar). Applied Physics Letters, 82(3), 400–402. https://doi.org/10.1063/1.1536264

Patten, J., Fesperman, R., Kumar, S., McSpadden, S., Qu, J., Lance, M., … Huening, J. (2003). High-pressure phase transformation of silicon nitride. Applied Physics Letters, 83(23), 4740–4742. https://doi.org/10.1063/1.1632031

Fitting, L., Zeman, M. C., Yang, W. C., & Nemanich, R. J. (2003). Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001). Journal of Applied Physics, 93(7), 4180–4184. https://doi.org/10.1063/1.1557787

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). Journal of Applied Physics, 93(7), 3995–4004. https://doi.org/10.1063/1.1559424

Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Tagantsev, A. K., Cross, J. S., & Tsukada, M. (2003). Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors. Applied Physics Letters, 83(4), 728–730. https://doi.org/10.1063/1.1593830

Yang, W. C., Rodriguez, B. J., Park, M., Nemanich, R. J., Ambacher, O., & Cimalla, V. (2003). Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures. Journal of Applied Physics, 94(9), 5720–5725. https://doi.org/10.1063/1.1618355

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). Journal of Applied Physics, 94(5), 3163–3172. https://doi.org/10.1063/1.1596369

Kobashi, K., Nishibayashi, Y., Yokota, Y., Ando, Y., Tachibana, T., Kawakami, N., … Sakai, T. (2003). R&D of diamond films in the Frontier Carbon Technology Project and related topics. Diamond and Related Materials, 12(3-7), 233–240. https://doi.org/10.1016/S0925-9635(02)00298-4

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003). Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'. Journal of Applied Physics, 93(6), 3679. https://doi.org/10.1063/1.1542911

Kock, F. A. M., Garguilo, J. M., Nemanich, R. J., Gupta, S., Weiner, B. R., & Morell, G. (2003). Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films. Diamond and Related Materials, 12(3-7), 474–480. https://doi.org/10.1016/S0925-9635(02)00365-5

Gruverman, A., Rodriguez, B. J., Kingon, A. I., Nemanich, R. J., Cross, J. S., & Tsukada, M. (2003). Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors. Applied Physics Letters, 82(18), 3071–3073. https://doi.org/10.1063/1.1570942

Park, M., Sakhrani, V., Maria, J. P., Cuomo, J. J., Teng, C. W., Muth, J. F., … Nemanich, R. J. (2003). Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation. Journal of Materials Research, 18(4), 768–771. https://doi.org/10.1557/JMR.2003.0106

Jeon, H., Won, H., Kim, Y., Lee, J., & Nemanich, R. J. (2002). Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100). Journal of the Korean Physical Society, 40(5), 903–907.

Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002). Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN. Journal of Applied Physics, 91(11), 9151–9160. https://doi.org/10.1063/1.1471578

Oh, J., & Nemanich, R. J. (2002). Current-voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy. Journal of Applied Physics, 92(6), 3326–3331. https://doi.org/10.1063/1.1499545

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films. Journal of Applied Physics, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127

Fulton, C. C., Lucovsky, G., & Nemanich, R. J. (2002). Electronic states at the interface of Ti-Si oxide on Si(100). Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1726–1731. https://doi.org/10.1116/1.1493785

Kock, F. A. M., Garguilo, J. M., Brown, B., & Nemanich, R. J. (2002). Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films. Diamond and Related Materials, 11(3-6), 774–779. https://doi.org/10.1016/S0925-9635(02)00006-7

Gruverman, A., Rodriguez, B. J., Nemanich, R. J., & Kingon, A. I. (2002). Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films. Journal of Applied Physics, 92(5), 2734–2739. https://doi.org/10.1063/1.1497698

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002). Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. Journal of Applied Physics, 91(2), 732–738. https://doi.org/10.1063/1.1424060

Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002). Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials. Journal of Crystal Growth, 246(3-4), 252–258. https://doi.org/10.1016/S0022-0248(02)01749-9

Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Ambacher, O. (2002). Piezoresponse force microscopy for polarity imaging of GaN. Applied Physics Letters, 80(22), 4166–4168. https://doi.org/10.1063/1.1483117

Oh, J., Meunier, V., Ham, H., & Nemanich, R. J. (2002). Single electron tunneling of nanoscale TiSi2 islands on Si. Journal of Applied Physics, 92(6), 3332–3337. https://doi.org/10.1063/1.1499531

Popov, M., Kyotani, M., Nemanich, R. J., & Koga, Y. (2002). Superhard phase composed of single-wall carbon nanotubes - art. no. 033408. Physical Review. B, Condensed Matter and Materials Physics, 6503(3), 3408-. https://doi.org/10.1103/physrevb.65.033408

Platow, W., Oh, J., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2002). TiC nanoisland formation on 6H-SiC(0001)(Si). Journal of Applied Physics, 91(9), 6081–6084. https://doi.org/10.1063/1.1465121

Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002). X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. Applied Physics Letters, 81(10), 1797–1799. https://doi.org/10.1063/1.1506781

Platow, W., Wood, D. K., Tracy, K. M., Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2001). Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312. Physical Review. B, Condensed Matter and Materials Physics, 6311(11), 5312. https://doi.org/10.1103/physrevb.63.115312

Platow, W., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2001). Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si). Journal of Applied Physics, 90(12), 5924–5927. https://doi.org/10.1063/1.1412842

Kock, F. A. M., Garguilo, J. M., & Nemanich, R. J. (2001). Imaging electron emission from diamond film surfaces: N-doped diamond vs. nanostructured diamond. Diamond and Related Materials, 10(9-10), 1714–1718. https://doi.org/10.1016/S0925-9635(01)00401-0

Park, M., Teng, C. W., Sakhrani, V., Mclaurin, M. B., Kolbas, R. M., Sanwald, R. C., … Cuomo, J. J. (2001). Optical characterization of wide band gap amorphous semiconductors (a-Si: C: H): Effect of hydrogen dilution. Journal of Applied Physics, 89(2), 1130–1137. https://doi.org/10.1063/1.1332421

Dutta, M., Alexson, D., Bergman, L., Nemanich, R. J., Dupuis, R., Kim, K. W., … Stroscio, M. (2001). Phonons in III–V nitrides: Confined phonons and interface phonons. Physica E: Low-Dimensional Systems and Nanostructures, 11(2-3), 277–280. https://doi.org/10.1016/S1386-9477(01)00217-X

Ballarotto, V. W., Siegrist, K., Phaneuf, R. J., Williams, E. D., Yang, W. C., & Nemanich, R. J. (2001). Photon energy dependence of contrast in photoelectron emission microscopy of Si devices. Applied Physics Letters, 78(22), 3547–3549. https://doi.org/10.1063/1.1376151

Gracin, D., Bogdanovic, I., Borjanovic, V., Jaksic, M., Pastuovic, Z., Dutta, J. M., … Nemanich, R. J. (2001). Quantitative analysis of a-Si1-xCx: H thin films by vibrational spectroscopy and nuclear methods. Vacuum, 61(2-4), 303–308. https://doi.org/10.1016/S0042-207X(01)00134-8

Gracin, D., Borjanovic, V., Vlahovic, B., Sunda-Meya, A., Patterson, T. M., Dutta, J. M., … Roedern, B. (2001). Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL. Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 475(1-3), 635–639. https://doi.org/10.1016/S0168-9002(01)01578-9

Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., … Adar, F. (2001). Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys. Journal of Applied Physics, 89(1), 798–800. https://doi.org/10.1063/1.1330760

Platow, W., Wood, D. E., Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2001). XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001). Journal of Synchrotron Radiation, 8(2001 Mar.), 475–477. https://doi.org/10.1107/S0909049500017921

Nemanich, R. J. (2000). Advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials. Diamond and Related Materials, 9(1), vii.

Jeon, H., Jung, B., Kim, Y. D., Yang, W. C., & Nemanich, R. J. (2000). Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111). Journal of Applied Physics, 88(5), 2467–2471. https://doi.org/10.1063/1.1286725

Balkas, C. M., Sitar, Z., Bergman, L., Shmagin, I. K., Muth, J. F., Kolbas, R., … Davis, R. F. (2000). Growth and characterization of GaN single crystals. Journal of Crystal Growth, 208(1-4), 100–106. https://doi.org/10.1016/S0022-0248(99)00445-5

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (2000). Measurement of field emission from nitrogen-doped diamond films. Diamond and Related Materials, 9(9-10), 1569–1573. https://doi.org/10.1016/S0925-9635(00)00304-6

Bilbro, G. L., & Nemanich, R. J. (2000). Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures. Applied Physics Letters, 76(7), 891–893. https://doi.org/10.1063/1.125620

Hartman, J. D., Naniwae, K., Petrich, C., Ramachandran, V., Feenstra, R. M., Nemanich, R. J., & Davis, R. F. (2000). Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001). Materials Science Forum, 338(3), 353–356. https://doi.org/10.4028/www.scientific.net/msf.338-342.353

O'Brien, M. L., Koitzsch, C., & Nemanich, R. J. (2000). Photoemission of the SiO2-SiC heterointerface. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1776–1784. https://doi.org/10.1116/1.591471

Bergman, L., Dutta, M., Stroscio, M. A., Komirenko, S. M., Nemanich, R. J., Eiting, C. J., … Dupuis, R. D. (2000). Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice. Applied Physics Letters, 76(15), 1969–1971. https://doi.org/10.1063/1.126225

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087. https://doi.org/10.1116/1.1303733

Christman, J. A., Kim, S. H., Maiwa, H., Maria, J. P., Rodriguez, B. J., Kingon, A. I., & Nemanich, R. J. (2000). Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti- 0.7)O-3 thin films studied by atomic force microscopy. Journal of Applied Physics, 87(11), 8031–8034. https://doi.org/10.1063/1.373492

Carter, R. J., Hauser, J. R., & Nemanich, R. J. (2000). Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces. Journal of the Electrochemical Society, 147(9), 3512–3518. https://doi.org/10.1149/1.1393929

Kim, S. H., Kim, D. J., Lee, K. M., Park, M., Kingon, A. I., Nemanich, R. J., … Streiffer, S. K. (1999). An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique. Journal of Materials Research, 14(11), 4395–4401. https://doi.org/10.1557/JMR.1999.0594

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. Journal of the Electrochemical Society, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

Porto, A. O., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1999). Cobalt suicide formation on 6H silicon carbide. Journal of Synchrotron Radiation, 6(1999 May 1), 188–189. https://doi.org/10.1107/S0909049599001326

Alexson, D., Bergman, L., Dutta, M., Kim, K. W., Komirenko, S., Nemanich, R. J., … Yu, S. G. (1999). Confined phonons and phonon-mode properties of III–V nitrides with wurtzite crystal structure. Physica B: Condensed Matter, 263-264(1999 Mar.), 510–513. https://doi.org/10.1016/s0921-4526(98)01423-9

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces. Journal of the Electrochemical Society, 146(7), 2648–2651. https://doi.org/10.1149/1.1391986

Park, M., Sowers, A. T., Rinne, C. L., Schlesser, R., Bergman, L., Nemanich, R. J., … Choi, W. B. (1999). Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 734–739. https://doi.org/10.1116/1.590630

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (1999). Field emission properties of nitrogen-doped diamond films. Journal of Applied Physics, 86(7), 3973–3982. https://doi.org/10.1063/1.371316

Goeller, P. T., Boyanov, B. I., Sayers, D. E., Nemanich, R. J., Myers, A. F., & Steel, E. B. (1999). Germanium segregation in the Co/SiGe/Si(001) thin film system. Journal of Materials Research, 14(11), 4372–4384. https://doi.org/10.1557/JMR.1999.0592

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999). Growth of epitaxial CoSi2 on SiGe(001). Journal of Applied Physics, 86(3), 1355–1362. https://doi.org/10.1063/1.370894

Somashekhar, A., Ying, H., Smith, P. B., Aldrich, D. B., & Nemanich, R. J. (1999). Hydrogenplasma removal of post-Rie residue for backend processing. Journal of the Electrochemical Society, 146(6), 2318–2321. https://doi.org/10.1149/1.1391933

Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999). Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy. Applied Surface Science, 146(1-4), 287–294. https://doi.org/10.1016/S0169-4332(99)00021-5

Bergman, L., Alexson, D., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., & Davis, R. F. (1999). Phonon dynamics and lifetimes of AlN and GaN crystallites. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65). https://doi.org/10.1557/s1092578300003422

Park, M., McGregor, D. R., Bergman, L., Nemanich, R. J., Hren, J. J., Cuomo, J. J., … Zhirnov, V. V. (1999). Raman analysis and field emission study of ion beam etched diamond films. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(2), 700–704. https://doi.org/10.1116/1.590622

Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., … Davis, R. F. (1999). Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure. Physical Review. B, Condensed Matter and Materials Physics, 59(20), 12977–12982. https://doi.org/10.1103/physrevb.59.12977

Bergman, L., Dutta, M., Balkas, C., Davis, R. F., Christman, J. A., Alexson, D., & Nemanich, R. J. (1999). Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN. Journal of Applied Physics, 85(7), 3535–3539. https://doi.org/10.1063/1.369712

Park, M., Camphausen, S. M., Myers, A. F., Barletta, P. T., Sakhrani, V., Bergman, L., … Cuomo, J. J. (1999). Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles. Materials Letters, 41(5), 229–233. https://doi.org/10.1016/S0167-577X(99)00135-4

Jung, B., Kim, Y. D., Jeon, H., Yang, W., & Nemanich, R. J. (1999). Reduction of the transition temperature of C54TiSi(2) through a Ta interlayer. Journal of the Korean Physical Society, 35(1999 Dec.), S769–773.

Maillard-Schaller, E., Boyanov, B. I., English, S., & Nemanich, R. J. (1999). Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100). Journal of Applied Physics, 85(7), 3614–3618. https://doi.org/10.1063/1.369774

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1999). The effect of germanium on the Co-SiGe thin-film reaction. Journal of Synchrotron Radiation, 6(1999 May 1), 521–523. https://doi.org/10.1107/S0909049599000060

Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177. https://doi.org/10.1116/1.581745

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. Journal of Electronic Materials, 28(12), L34–37. https://doi.org/10.1007/s11664-999-0145-4

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces. Journal of Applied Physics, 86(8), 4483–4490. https://doi.org/10.1063/1.371391

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces. Journal of the Electrochemical Society, 146(5), 1910–1917. https://doi.org/10.1149/1.1391864

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. Journal of Applied Physics, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

Ade, H., Yang, W., English, S. L., Hartman, J., Davis, R. F., Nemanich, R. J., … Madey, J. M. J. (1998). A free electron laser-photoemission electron microscope system (FEL-PEEM). Surface Review and Letters, 5(6), 1257–1268. https://doi.org/10.1142/S0218625X98001596

Baumann, P. K., & Nemanich, R. J. (1998). Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier. Physical Review. B, Condensed Matter and Materials Physics, 58(3), 1643–1654. https://doi.org/10.1103/physrevb.58.1643

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., English, S. L., Hartman, J. D., Sowers, A. T., & Ward, B. L. (1998). Characterization of electron emitting surfaces of diamond and III-V nitrides. Diamond Films and Technology, 8(4), 211–223.

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. Journal of Applied Physics, 84(9), 5248–5260. https://doi.org/10.1063/1.368814

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1998). Co-deposition of cobalt disilicide on silicon-germanium thin films. Thin Solid Films, 320(2), 206–210. https://doi.org/10.1016/S0040-6090(97)00941-3

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998). Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. Journal of Applied Physics, 84(4), 2086–2090. https://doi.org/10.1063/1.368355

Baumann, P. K., & Nemanich, R. J. (1998). Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110) interfaces. Journal of Applied Physics, 83(4), 2072–2082. https://doi.org/10.1063/1.366940

Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. Journal of Applied Physics, 84(9), 5238–5242. https://doi.org/10.1063/1.368775

Baumann, P. K., & Nemanich, R. J. (1998). Electron emission from metal-diamond (100), (111) and (110) interfaces. Diamond and Related Materials, 7(2-5), 612–619. https://doi.org/10.1016/S0925-9635(97)00256-2

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998). Electron emission properties of crystalline diamond and III-nitride surfaces. Applied Surface Science, 132(1998 June), 694–703. https://doi.org/10.1016/s0169-4332(98)00140-8

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1998). Film thickness effects in the Co-Si1-xGex solid phase reaction. Journal of Applied Physics, 84(8), 4285–4291. https://doi.org/10.1063/1.368872

Sayers, D. E., Goeller, P. T., Boyanov, B. I., & Nemanich, R. J. (1998). In situ studies of metal-semiconductor interactions with synchrotron radiation. Journal of Synchrotron Radiation, 5(3), 1050–1051. https://doi.org/10.1107/S0909049597015240

Christman, J. A., Woolcott, R. R., Kingon, A. I., & Nemanich, R. J. (1998). Piezoelectric measurements with atomic force microscopy. Applied Physics Letters, 73(26), 3851–3853. https://doi.org/10.1063/1.122914

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. Journal of Applied Physics, 84(9), 5046–5051. https://doi.org/10.1063/1.368752

Baumann, P. K., & Nemanich, R. J. (1998). Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces. Surface Science, 409(2), 320–335. https://doi.org/10.1016/S0039-6028(98)00259-3

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998). X-ray photoelectron diffraction from (3X3) and (root 3X root3)R30 degrees (001)(Si) 6H-SiC surfaces. Journal of Applied Physics, 84(11), 6042–6048. https://doi.org/10.1063/1.368879

Wang, Z., Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997). An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions. Journal De Physique. IV, 7(C2 pt.1), 561–564. https://doi.org/10.1051/jp4/1997096

Baumann, P. K., Bozeman, S. P., Ward, B. L., & Nemanich, R. J. (1997). Characterization of metal-diamond interfaces: electron affinity and Schottky barrier height. Diamond and Related Materials, 6(2-4), 398–402. https://doi.org/10.1016/S0925-9635(96)00601-2

Baumann, P. K., & Nemanich, R. J. (1997). Comparison of electron affinity and Schottky barrier height of zirconium and copper-diamond interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1236–1240. https://doi.org/10.1116/1.589444

Yang, W., Jedema, F. J., Ade, H., & Nemanich, R. J. (1997). Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001). Thin Solid Films, 308(1997 Oct. 31), 627–633. https://doi.org/10.1016/S0040-6090(97)00431-8

Jeon, H.-T., Yoon, G.-J., & Nemanich, R. J. (1997). Dependence of the C49-C54 TiSi(2) phase transition temperature on film thickness and Si substrate orientation. Thin Solid Films, 299(1-2), 178–182. https://doi.org/10.1016/S0040-6090(96)09042-6

Wang, Z., Aldrich, D. B., Nemanich, R. J., & Sayers, D. E. (1997). Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1 XGEX alloys. Journal of Applied Physics, 82(5), 2342–2348. https://doi.org/10.1063/1.366043

Nam, O.-H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. (1997). Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy. Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535. https://doi.org/10.1143/JJAP.36.L532

Shen, T. D., Shmagin, I. K., Koch, C. C., Kolbas, R. M., Fahmy, Y., Bergman, L., … Quan, M. X. (1997). Photoluminescence from mechanically milled Si and SiO(2) powders. Physical Review. B, Condensed Matter and Materials Physics, 55(12), 7615–7623. https://doi.org/10.1103/physrevb.55.7615

Boyanov, B. I., Goeller, P. T., Sayers, D. E., & Nemanich, R. J. (1997). Preferential Co-SI bonding at the Co/SiGe(100) interface. Applied Physics Letters, 71(21), 3060–3062. https://doi.org/10.1063/1.119436

Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997). Raman analysis of the configurational disorder in AlxGa1-xN films. Applied Physics Letters, 71(15), 2157–2159. https://doi.org/10.1063/1.119367

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. J. (1997). Structure and stability of cobalt-silicon-germanium thin films. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 133(1-4), 84–89. https://doi.org/10.1016/S0168-583X(97)00458-8

Balkas, C. M., Sitar, Z., Zheleva, T. S., Bergman, L., Nemanich, R. J., & Davis, R. F. (1997). Sublimation growth and characterization of bulk aluminum nitride single crystals. Journal of Crystal Growth, 179(3-4), 363–370. https://doi.org/10.1016/S0022-0248(97)00160-7

McCormick, T. L., Jackson, W. E., & Nemanich, R. J. (1997). The characterization of strain, impurity content, and crush strength of synthetic diamond crystals. Journal of Materials Research, 12(1), 253–263. https://doi.org/10.1557/JMR.1997.0033

Sowers, A. T., Christman, J. A., Bremser, M. D., Ward, B. L., Davis, R. F., & Nemanich, R. J. (1997). Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications. Applied Physics Letters, 71(16), 2289–2291. https://doi.org/10.1063/1.120052

Balkas, C. M., Sitar, Z., Zheleva, T., Bergman, L., Shmagin, I. K., Muth, J. F., … Davis, R. F. (1996). Growth of bulk AIN and GaN single crystals by sublimation. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 41–46. Pittsburgh, Pa.: Materials Research Society.

Humphreys, T. P., Nemanich, R. J., & Das, K. (1993). High temperature rectifying contact. Washington, DC: U.S. Patent and Trademark Office.

High temperature refractory silicide rectifying contact. (1992). Washington, DC: U.S. Patent and Trademark Office.

Shroder, R. E., Nemanich, R. J., & Glass, J. T. (1990). Analysis of the composite structures in diamond thin-films by raman-spectroscopy. Physical Review. B, Condensed Matter and Materials Physics, 41(6), 3738–3745. https://doi.org/10.1103/physrevb.41.3738

Nemanich, R. J., Glass, J. T., Lucovsky, G., & Shroder, R. E. (1988). Raman-scattering characterization of carbon bonding in diamond and diamondlike thin-films. Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 6(3), 1783–1787. https://doi.org/10.1116/1.575297