@article{liu_carels_peachey_2022, title={Characterization and Analysis of RF Switches in SOI Technology for ESD Protection}, ISSN={["1541-7026"]}, DOI={10.1109/IRPS48227.2022.9764421}, abstractNote={The self-protection of SOI RF switches is presented in this paper. TLP ESD test results show that the ESD protection performance of SOI RF switches is impacted by various parameters, including switch array gate channel length, finger width, finger number, and RF switch stack number. The physics of the SOI RF switch ESD protection mechanism is also studied by comparing TLP ESD test results from SOI RF switch splits and other ESD protection structures. It is concluded that the SOI RF switch self-protection process during ESD transients contains two mechanisms: NMOS channel conduction triggered by gate coupling effect and parasitic bipolar turning on.}, journal={2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)}, author={Liu, Jian and Carels, Nathaniel and Peachey, Nathaniel}, year={2022} }