@article{temizer_nori_kumar_narayan_2016, title={Defect mediated room temperature ferromagnetism and resistance minima study in epitaxial ZnGa0.002Al0.02O transparent conducting oxide films}, volume={49}, number={34}, journal={Journal of Physics. D, Applied Physics}, author={Temizer, N. K. and Nori, S. and Kumar, D. and Narayan, J.}, year={2016} }
 @article{nellutla_nori_singamaneni_prater_narayan_smirnov_2016, title={Multi-frequency ferromagnetic resonance investigation of nickel nanocubes encapsulated in diamagnetic magnesium oxide matrix}, volume={120}, number={22}, journal={Journal of Applied Physics}, author={Nellutla, S. and Nori, S. and Singamaneni, S. R. and Prater, J. T. and Narayan, J. and Smirnov, A. I.}, year={2016} }
 @article{punugupati_kumar_nori_hunte_narayan_2016, title={Structural, magnetic and magnetotransport properties of bi-epitaxial La0.7Sr0.3MnO3 (110) thin films integrated on Si (001)}, volume={106}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2015.12.054}, abstractNote={We report the growth of bi-epitaxial La0.7Sr0.3MnO3 (110) thin films on Si (001) substrate with cubic yttria stabilized zirconia (c-YSZ)/SrTiO3 (STO) buffer layers by pulsed laser deposition. The La0.7Sr0.3MnO3 and STO thin films were grown with a single [110] out-of-plane orientation and with two in-plane domain variants, which is confirmed by XRD and detailed TEM studies. The growth of STO on c-YSZ can be explained by the paradigm of domain matching epitaxy. The epitaxial relationship between STO and c-YSZ can be written as [110] (001) c-YSZ ‖ [1¯11¯] (110) STO (or) [110] (001) c-YSZ ‖ [1¯12¯] (110) STO. The La0.7Sr0.3MnO3 thin films are ferromagnetic with Curie temperature 324 K and showed metal to insulator transition at 285 K. The La0.7Sr0.3MnO3 thin films showed hysteresis loops in magnetoresistance when magnetic field is applied along both in-plane (110) and out-of-plane [110] directions. The highest magnetoresistance obtained in this study is −32% at 50 K and 50 kOe for in-plane configuration, whereas the room-temperature magnetoresistance is −4% at 10 kOe and −17% at 50 kOe. The hysteresis in the magnetoresistance and the controlled domain boundaries in bi-epitaxial La0.7Sr0.3MnO3 films integrated on Si can offer significant advantages over the polycrystalline counterparts.}, journal={ACTA MATERIALIA}, author={Punugupati, Sandhyarani and Kumar, Raj and Nori, Sudhakar and Hunte, Frank and Narayan, Jagdish}, year={2016}, month={Mar}, pages={40–47} }
 @article{singamaneni_prater_nori_kumar_lee_misra_narayan_2015, title={Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)}, volume={117}, number={17}, journal={Journal of Applied Physics}, author={Singamaneni, S. R. and Prater, J. T. and Nori, S. and Kumar, D. and Lee, B. and Misra, V. and Narayan, J.}, year={2015} }
 @article{jin_nori_lee_kumar_wu_prater_kim_narayan_2015, title={Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films}, volume={118}, number={16}, journal={Journal of Applied Physics}, author={Jin, Z. H. and Nori, S. and Lee, Y. F. and Kumar, D. and Wu, F. and Prater, J. T. and Kim, K. W. and Narayan, J.}, year={2015} }
 @article{temizer_nori_narayan_2014, title={Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations}, volume={115}, number={2}, journal={Journal of Applied Physics}, author={Temizer, N. K. and Nori, S. and Narayan, J.}, year={2014} }
 @misc{rao_prater_wu_nori_kumar_narayan_2014, title={Integration of epitaxial permalloy on Si (100) through domain matching epitaxy paradigm}, volume={18}, ISSN={["1879-0348"]}, DOI={10.1016/j.cossms.2013.07.004}, abstractNote={Abstract This paper addresses epitaxial integration of magnetic materials with Si (1 0 0) based solid state devices. Epitaxial Ni82.5Fe17.5 (permalloy, Py) thin films have been synthesized by pulsed laser deposition (PLD) on Si (1 0 0) using MgO/TiN as a template buffer. This epitaxial growth of these large lattice misfit systems was achieved through domain matching epitaxy (DME). The in-plane XRD pattern and selective area electron diffraction (SAED) results clearly indicate cube-on-cube epitaxial alignment. The bright field TEM image of Py/MgO/TiN/Si (1 0 0) heterostructure infers a Py layer thickness of ∼30 nm, with a well aligned island (150–200 nm) structure that is consistent with Volmer–Weber type growth. Magnetization data collected at 4 K and 300 K indicates that the easy axis of the magnetization lies in the plane of the Py. In addition, we have observed an intrinsic positive exchange bias (PEB) field of ∼104 Oe, where the magnetic hysteresis loop is shifted toward the positive field axis under zero field cooling conditions.}, number={1}, journal={CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE}, author={Rao, S. S. and Prater, J. T. and Wu, Fan and Nori, Sudhakar and Kumar, D. and Narayan, J.}, year={2014}, month={Feb}, pages={1–5} }
 @article{bayati_molaeil_richmond_nori_wu_kumar_narayan_reynolds_reynolds_2014, title={Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing}, volume={6}, ISSN={["1944-8252"]}, DOI={10.1021/am506298y}, abstractNote={This study focuses on the ultrafast improvement of surface wettability, electrical, and room temperature magnetic characteristics of cubic zirconia single crystalline thin films after laser annealing. The point defects generated by the laser treatment are envisaged to play a critical role in altering the above properties. Yttria stabilized zirconia (YSZ) thin films were epitaxially grown on Si(100) substrates by pulsed laser deposition technique and subsequently annealed by a KrF excimer laser beam (τ = 25 ns) using low-energy laser pulses. An atomically sharp interface, parallel to the film free surface, between laser annealed layer and the pristine region was observed. The single crystalline nature of thin films was preserved following the laser treatment. The laser-solid interaction with YSZ led to the introduction of point defects, i.e., oxygen vacancies, resulting in a strained structure which, in turn, resulted in the formation of a tetragonal-like zirconia. With the increase of number of laser pulses the laser treated films got highly disordered due to the high concentration of the point defects, while maintaining their crystalline nature. Although the surface of the pristine sample showed weak hydrophilic characteristics (contact angle ∼ 73°), the laser annealed samples exhibited significantly improved hydrophilic characteristics. It was found that there is an optimum number of laser pulses where the maximum hydrophilicity (contact angle ∼ 22°) is obtained. The carrier concentration in the sample with the highest hydrophilicity was determined to be higher by about 5 orders of magnitude compared to the pristine sample. This sample possessed the lowest electrical resistivity. The laser annealed YSZ epilayers showed a superior room-temperature ferromagnetic behavior, compared to the pristine samples. A 2-fold enhancement in the magnetization of the samples was observed following the laser treatment which is a clear demonstration of the key role of defects and their transient distribution throughout the lattice. All these observations were correlated with the formation of point defects due to the photon interaction with YSZ and absorption of energy of the KrF laser photons to produce defects.}, number={24}, journal={ACS APPLIED MATERIALS & INTERFACES}, author={Bayati, R. and Molaeil, R. and Richmond, A. and Nori, S. and Wu, F. and Kumar, D. and Narayan, J. and Reynolds, J. G. and Reynolds, C. L., Jr.}, year={2014}, month={Dec}, pages={22316–22325} }
 @article{bayati_mishra_naseri_nori_2014, title={Nanostructured Materials for Electronics and Photonics}, volume={2014}, ISSN={["1687-4129"]}, DOI={10.1155/2014/725764}, abstractNote={This special issue addresses both experimental and theoretical research works in the areas of nanoscale electronic, optoelectronic, andmagneto-optical materials. It aims to facilitate the dissemination of interdisciplinary research results in the interrelated and rapidly converging fields of nanoelectronics and photonics. The main focus of this issue is placed on enhancing the performance of electronic devices using nanoscience and nanotechnology.The following aspects were considered as particular interests for this special issue:}, journal={JOURNAL OF NANOMATERIALS}, author={Bayati, R. and Mishra, Y. K. and Naseri, N. and Nori, S.}, year={2014} }
 @article{rao_prater_wu_nori_kumar_yue_liou_narayan_2014, title={Positive exchange bias in epitaxial permalloy/MgO integrated with Si (100)}, volume={18}, ISSN={1359-0286}, url={http://dx.doi.org/10.1016/J.COSSMS.2014.02.001}, DOI={10.1016/j.cossms.2014.02.001}, abstractNote={In magnetic random access memory (MRAM) devices, soft magnetic thin film elements such as permalloy (Py) are used as unit cells of information. The epitaxial integration of these elements with the technologically important substrate Si (1 0 0) and a thorough understanding of their magnetic properties are critical for CMOS-based magnetic devices. We report on the epitaxial growth of Ni82.5Fe17.5 (permalloy, Py) on Si (1 0 0) using a TiN/MgO buffer layer. Initial stages of growth are characterized by the formation of discrete islands that gradually merge into a continuous film as deposition times are extended. Interestingly, we find that the magnetic features of Py films in early stages of island coalescence are distinctly different from the films formed initially (discrete islands) and after extended deposition times (narrow distribution of equiaxed granular films). Isothermal in-plane and out-of-plane magnetic measurements performed on these transitional films show highly anisotropic magnetic behavior with an easy magnetization axis lying in the plane of the film. Importantly, when this sample is zero-field cooled, a positive exchange bias and vertical loop shift are observed, unusual for a soft ferromagnet like Py. Repeated field cycling and hysteresis loops up to the fields of 7T produced reproducible hysteresis loops indicating the existence of strongly pinned spin configurations. Classical interface related exchange bias models cannot explain the observed magnetic features of the transitional Py films. We believe that the anomalous magnetic behavior of such Py films may be explained by considering the highly irregular morphology that develops at intermediate growth times that are possibly also undergoing a transition from Bloch to Neel domain wall structures as a function of Py island size. This study broadens the current understanding of magnetic properties of Py thin layers for technological applications in magneto-electronic devices, integrated with Si (1 0 0).}, number={3}, journal={Current Opinion in Solid State and Materials Science}, publisher={Elsevier BV}, author={Rao, S.S. and Prater, J.T. and Wu, Fan and Nori, S. and Kumar, D. and Yue, L. and Liou, S.-H. and Narayan, J.}, year={2014}, month={Jun}, pages={140–146} }
 @article{molaei_bayati_nori_kumar_prater_narayan_2013, title={Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment}, volume={103}, number={25}, journal={Applied Physics Letters}, author={Molaei, R. and Bayati, R. and Nori, S. and Kumar, D. and Prater, J. T. and Narayan, J.}, year={2013} }
 @article{mal_nori_narayan_prater_avasthi_2013, title={Ion-irradiation-induced ferromagnetism in undoped ZnO thin films}, volume={61}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2012.09.071}, abstractNote={We have introduced defects in ZnO epitaxial thin films by swift heavy 107Ag9+ ion irradiation and investigated systematically their magnetic, electrical and optical properties. Oxygen annealed ZnO films are epitaxial single crystals that exhibit no long-range magnetic order. However, in this paper it is shown that room-temperature ferromagnetism (RTFM) can be introduced in a controlled manner in these films using ion irradiation and that the magnetization increases with ion dose. This qualitatively agrees with earlier studies which showed that RTFM could be induced in ZnO films through either vacuum thermal annealing or pulsed laser annealing below energy densities that lead to melting. Raman studies of the ion irradiated samples revealed dramatic changes in the vibration modes that correlated with increases in the carrier concentration, indicative of lattice disorder and defect creation. We compare these results with those observed in laser irradiated and vacuum annealed samples, and then discuss these findings in the context of defects and defect complexes created during the high-energy heavy ion irradiation process. We propose a unified mechanism to explain RTFM and n-type conductivity enhancements during irradiation, and laser and vacuum annealing.}, number={8}, journal={ACTA MATERIALIA}, author={Mal, Siddhartha and Nori, Sudhakar and Narayan, J. and Prater, J. T. and Avasthi, D. K.}, year={2013}, month={May}, pages={2763–2768} }
 @article{mal_nori_mula_narayan_prater_2012, title={Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films}, volume={112}, number={11}, journal={Journal of Applied Physics}, author={Mal, S. and Nori, S. and Mula, S. and Narayan, J. and Prater, J. T.}, year={2012} }
 @article{yang_nori_mal_narayan_2011, title={Control of room-temperature defect-mediated ferromagnetism in VO2 films}, volume={59}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2011.06.047}, abstractNote={We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO2) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO2 films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO2 films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO2 films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.}, number={16}, journal={ACTA MATERIALIA}, author={Yang, Tsung-Han and Nori, Sudhakar and Mal, Siddhartha and Narayan, Jagdish}, year={2011}, month={Sep}, pages={6362–6368} }
 @article{mal_nori_narayan_prater_2011, title={Defect-mediated ferromagnetism and controlled switching characteristics in ZnO}, volume={26}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2011.74}, abstractNote={Abstract}, number={10}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Mal, Siddhartha and Nori, Sudhakar and Narayan, Jagdish and Prater, John T.}, year={2011}, month={May}, pages={1298–1308} }
 @article{jin_aggarwal_wei_nori_kumar_ponarin_smirnov_narayan_narayan_2011, title={Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films}, volume={42}, ISSN={1073-5623 1543-1940}, url={http://dx.doi.org/10.1007/S11661-010-0479-9}, DOI={10.1007/s11661-010-0479-9}, number={11}, journal={Metallurgical and Materials Transactions A}, publisher={Springer Science and Business Media LLC}, author={Jin, C. and Aggarwal, R. and Wei, W. and Nori, S. and Kumar, D. and Ponarin, D. and Smirnov, A. I. and Narayan, J. and Narayan, R. J.}, year={2011}, month={Nov}, pages={3250–3254} }
 @article{mal_narayan_nori_prater_kumar_2010, title={Defect-mediated room temperature ferromagnetism in zinc oxide}, volume={150}, ISSN={["0038-1098"]}, DOI={10.1016/j.ssc.2010.06.030}, abstractNote={We have introduced systematic changes in the electrical, magnetic and optical properties of undoped ZnO films through irradiation with an UV Excimer laser. Increases in the electrical conductivity and magnetic moment have been controlled precisely with the number of laser pulses, without altering the Wurtzite crystal structure and n-type semiconducting characteristics of the films. The laser induced ferromagnetism and concomitant conductivity enhancement can be reversed through subsequent thermal annealing. Hence, we have successfully demonstrated reversible switching of RTFM in undoped ZnO by employing oxygen annealing (off) and laser irradiation (on). We discuss these findings in terms of defects and defect complexes created by pulsed laser irradiation.}, number={35-36}, journal={SOLID STATE COMMUNICATIONS}, author={Mal, Siddhartha and Narayan, J. and Nori, Sudhakar and Prater, J. T. and Kumar, D.}, year={2010}, month={Sep}, pages={1660–1664} }
 @article{wei_nori_jin_narayan_narayan_ponarin_smirnov_2010, title={Mott transition in Ga-doped MgxZn1-xO: A direct observation}, volume={171}, ISSN={["1873-4944"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-77953133966&partnerID=MN8TOARS}, DOI={10.1016/j.mseb.2010.03.078}, abstractNote={This paper reports the direct evidence for Mott transition in Ga-doped MgxZn1−xO thin films. Highly transparent Ga-doped MgxZn1−xO thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg0.1Zn0.9O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg0.1Zn0.9O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg0.1Zn0.9O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 × 10−2 Ω cm at 40 mK, which is characteristic of the metal–insulator transition region. Temperature-dependent conductivity σ(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T−3/2.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS}, publisher={Elsevier BV}, author={Wei, Wei and Nori, Sudhakar and Jin, Chunming and Narayan, Jagdish and Narayan, Roger J. and Ponarin, Dmtri and Smirnov, Alex}, year={2010}, month={Jul}, pages={90–92} }
 @article{yang_nori_zhou_narayan_2009, title={Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films}, volume={95}, number={10}, journal={Applied Physics Letters}, author={Yang, T. H. and Nori, S. and Zhou, H. H. and Narayan, J.}, year={2009} }
 @article{aggarwal_nori_jin_pant_trichy_kumar_narayan_narayan_2009, title={Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition}, volume={57}, ISSN={["1359-6454"]}, DOI={10.1016/j.actamat.2009.01.018}, abstractNote={Co/Al2O3 multilayered thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at temperatures from room temperature (RT) to 600 °C. The Co/Al2O3 multilayered thin film grown at RT contains continuous cobalt layers in alumina matrices, with no evidence of island formation. On the other hand, cobalt showed a tendency to form islands in alumina matrices for growth temperatures in the range of 300–600 °C. All the Co/Al2O3 multilayered thin films showed ferromagnetic behavior up to RT. It was observed that variations in the deposition parameters can significantly influence the magnetic properties of Co/Al2O3 multilayers. Depending on the temperature and pulse rate, RT coercivities in the 50–300 Oe range were observed. Films deposited at 600 °C using a laser pulse rate of 10 Hz exhibited a decrease of coercivity with increasing measurement temperature. On the other hand, films deposited at 600 °C using a reduced pulse rate of 2 Hz demonstrated an “anomalous” relationship between low-temperature coercivity and temperature. In these films, coercivity exhibited a weak tendency to increase with temperature. Squareness (Mr/Ms) of the hysteresis loops and its dependence on the temperature was also shown to be strongly affected by the deposition parameters. These observations have been rationalized on the basis of two competing magnetic anisotropies that act along different directions in the material.}, number={6}, journal={ACTA MATERIALIA}, author={Aggarwal, Ravi and Nori, Sudhakar and Jin, Chunming and Pant, Punam and Trichy, Gopinath R. and Kumar, Dhananjay and Narayan, J. and Narayan, Roger J.}, year={2009}, month={Apr}, pages={2040–2046} }
 @article{narayan_nori_ramachandran_prater_2009, title={The synthesis and magnetic properties of a nanostructured Ni-MgO system}, volume={61}, ISSN={["1543-1851"]}, DOI={10.1007/s11837-009-0093-8}, number={6}, journal={JOM}, author={Narayan, J. and Nori, Sudhakar and Ramachandran, S. and Prater, J. T.}, year={2009}, month={Jun}, pages={76–81} }
 @article{narayan_nori_pandya_avasthi_smirnov_2008, title={Defect dependent ferromagnetism in MgO doped with Ni and Co}, volume={93}, number={8}, journal={Applied Physics Letters}, author={Narayan, J. and Nori, S. and Pandya, D. K. and Avasthi, D. K. and Smirnov, A. I.}, year={2008} }
 @article{jin_nori_wei_aggarwal_kumar_narayan_2008, title={Pulsed Laser Deposition of Nanoporous Cobalt Thin Films}, volume={8}, ISSN={["1533-4899"]}, DOI={10.1166/jnn.2008.483}, abstractNote={Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized
 aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The
 average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ∼5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for
 biosensing, drug delivery, data storage, and other technological applications.}, number={11}, journal={JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY}, author={Jin, Chunming and Nori, Sudhakar and Wei, Wei and Aggarwal, Ravi and Kumar, Dhananjay and Narayan, Roger J.}, year={2008}, month={Nov}, pages={6043–6047} }