Works (25)

Updated: July 5th, 2023 16:04

2006 journal article

Frontend processes required for continued CMOS scaling

Solid State Technology, 49(2), 46-.

By: J. Butterbaugh & C. Osborn

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Effect of post-metallization annealing for alternative gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F29โ€“F35.

By: I. Kim n, S. Han n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Stability of advanced gate stack devices

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 151(2), F22โ€“F28.

By: I. Kim n, S. Han n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 46(2-3), 299โ€“315.

By: C. Osburn n, I. Kim n, S. Han n, I. De*, K. Yee, S. Gannavaram*, S. Lee*, C. Lee* ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2001 journal article

The technical community in the 21st century

Informacije Midem = Journal of Microelectronics, Electronic Components and Materials, 69(1), 37.

By: C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Design and integration considerations for end-of-the roadmap ultrashallow junctions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338โ€“345.

By: C. Osburn n, I. De n, K. Yee n & A. Srivastava n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077โ€“1080.

By: I. De n, D. Johri n, A. Srivastava n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: gate workfunction; super steep retrograde; channel engineering
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891โ€“895.

By: K. Ahmed*, I. De*, C. Osburn*, J. Wortman* & J. Hauser*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: effective channel length; LDD; mobility; MOSFET; series resistance; shift and ratio; thin oxides
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1711โ€“1717.

By: I. De n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: channel engineering; MOS device design
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925โ€“1928.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Elevated n(+)/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(9), 1946โ€“1952.

By: J. Sun n, J. Tsai n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: elevated source/drain; selective epitaxy; shallow junctions; silicide
Source: Web Of Science
Added: August 6, 2018

1998 article

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163โ€“170.

By: A. Srivastava n, H. Heinisch n, E. Vogel n, C. Parker n, C. Osburn n, N. Masnari n, J. Wortman n, . Hauserโ€‰ n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1377โ€“1380.

By: J. Sun n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: elevated source/drain; epi facet; MOSFET
Source: Web Of Science
Added: August 6, 2018

1998 article

Low parasitic resistance contacts for scaled ULSI devices

Osburn, C. M., & Bellur, K. R. (1998, November 2). THIN SOLID FILMS, Vol. 332, pp. 428โ€“436.

By: C. Osburn n & K. Bellur n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: contact resistance; ULSI devices; self-aligned silicides; elevated source/drain
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131โ€“2137.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 286โ€“291.

By: W. Harrington, C. Magee, M. Pawlik, D. Downey, C. Osburn & S. Felch

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571โ€“585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659โ€“3664.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 article

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Downey, D. F., Osburn, C. M., Cummings, J. J., Daryanani, S., & Falk, S. W. (1997, October 31). THIN SOLID FILMS, Vol. 308, pp. 562โ€“569.

By: D. Downey*, C. Osburn n, J. Cummings*, S. Daryanani* & S. Falk*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: ultra-shallow junctions; B+ ion implants; BF2+ ion implants
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effects of silicon layer properties on device reliability for 0.1-ฮผm SOI n-MOSFET design strategies

IEEE Transactions on Electron Devices, 44(5), 815โ€“821.

By: R. Hulfachor n, K. Kim n, M. Littlejohn n & C. Osburn n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, Crossref
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587โ€“597. Pennington, NJ: Electrochemical Society.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491โ€“1498.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n & N. Masnari n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1997 journal article

The impact of in-situ rapid thermal gate dielectric processes on deep submicron MOSFETs

SOLID-STATE ELECTRONICS, 41(4), 619โ€“625.

By: K. Zhang & C. Osburn*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Ultrashallow junction formation by ion implant and RTA

Solid State Technology, 40(12), 71.

By: D. Downey, C. Osburn & S. Marcus

Source: NC State University Libraries
Added: August 6, 2018

1996 article

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343โ€“347.

By: J. Sun n, R. Bartholomew n, K. Bellur n, P. ONeil n, A. Srivastava n, K. Violette n, M. Ozturk, C. Osburn n, N. Masnari n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018