Works (25)

2006 journal article

Frontend processes required for continued CMOS scaling

Solid State Technology, 49(2), 46-.

By: J. Butterbaugh & C. Osborn

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Effect of post-metallization annealing for alternative gate stack devices

Journal of the Electrochemical Society, 151(2), F29–35.

By: I. Kim, S. Han & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Stability of advanced gate stack devices

Journal of the Electrochemical Society, 151(2), F22–28.

By: I. Kim, S. Han & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?

IBM Journal of Research and Development, 46(2-3), 299–315.

By: C. Osburn, I. Kim, S. Han, I. De, K. Yee, S. Gannavaram, S. Lee, C. Lee ...

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

The technical community in the 21st century

Informacije Midem = Journal of Microelectronics, Electronic Components and Materials, 69(1), 37.

By: C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Design and integration considerations for end-of-the roadmap ultrashallow junctions

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(1), 338–345.

By: C. Osburn, I. De, K. Yee & A. Srivastava

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Impact of gate workfunction on device performance at the 50 nm technology node

Solid-State Electronics, 44(6), 1077–1080.

By: I. De, D. Johri, A. Srivastava & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE Transactions on Electron Devices, 47(4), 891–895.

By: K. Ahmed, I. De, C. Osburn, J. Wortman & J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices

IEEE Transactions on Electron Devices, 46(8), 1711–1717.

By: I. De & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

Journal of the Electrochemical Society, 146(5), 1925–1928.

By: K. Beaman, O. Kononchuk, S. Koveshnikov, C. Osburn & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Elevated n(+)/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's

IEEE Transactions on Electron Devices, 45(9), 1946–1952.

By: J. Sun, J. Tsai & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.

By: A. Srivastava, H. Heinisch, E. Vogel, C. Parker, C. Osburn, N. Masnari, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics

IEEE Transactions on Electron Devices, 45(6), 1377–1380.

By: J. Sun & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Low parasitic resistance contacts for scaled ULSI devices

Thin Solid Films, 332(1-2), 428–436.

By: C. Osburn & K. Bellur

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 145(6), 2131–2137.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 286–291.

By: W. Harrington, C. Magee, M. Pawlik, D. Downey, C. Osburn & S. Felch

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

A comparative study of N+/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 144(10), 3659–3664.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Thin Solid Films, 308(1997 Oct. 31), 562–569.

By: D. Downey, C. Osburn, J. Cummings, S. Daryanani & S. Falk

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effects of silicon layer properties on device reliability for 0.1-mum soi n-mosfet design strategies

IEEE Transactions on Electron Devices, 44(5), 815–821.

By: R. Hulfachor, K. Kim, M. Littlejohn & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE Transactions on Electron Devices, 44(9), 1491–1498.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The impact of in-situ rapid thermal gate dielectric processes on deep submicron mosfets

Solid-State Electronics, 41(4), 619–625.

By: K. Zhang & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Ultrashallow junction formation by ion implant and RTA

Solid State Technology, 40(12), 71.

By: D. Downey, C. Osburn & S. Marcus

Source: NC State University Libraries
Added: August 6, 2018

1996 conference paper

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

Rapid thermal and integrated processing V: Symposium held April 8-12, 1996, San Francisco, California, U.S.A. (Materials Research Society symposium; 429), 343–347.

Source: NC State University Libraries
Added: August 6, 2018