The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
}, volume={1}, DOI={10.1063/5.0077628}, journal={APPLIED PHYSICS LETTERS}, author={Wang, Ke and Kirste, Ronny and Mita, Seiji and Washiyama, Shun and Mecouch, Will and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={Jan} } @article{bagheri_klump_washiyama_breckenridge_kim_guan_khachariya_quinones-garcia_sarkar_rathkanthiwar_et al._2022, title={Doping and compensation in heavily Mg doped Al-rich AlGaN films}, volume={2}, DOI={10.1063/5.0082992}, journal={APPLIED PHYSICS LETTERS}, author={Bagheri, Pegah and Klump, Andrew and Washiyama, Shun and Breckenridge, M. Hayden and Kim, Ji Hyun and Guan, Yan and Khachariya, Dolar and Quinones-Garcia, Cristyan and Sarkar, Biplab and Rathkanthiwar, Shashwat and et al.}, year={2022}, month={Feb} } @article{ryu_reddy_collazo_dickey_2022, title={Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals}, DOI={10.1063/5.0093588}, journal={Applied Physics Letters}, author={Ryu, Gyunghyun and Reddy, Pramod and Collazo, Ramón and Dickey, Elizabeth C.}, year={2022}, month={May} } @article{szymanski_khachariya_eldred_bagheri_washiyama_chang_pavlidis_kirste_reddy_kohn_et al._2022, title={GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions}, volume={1}, DOI={10.1063/5.0076044}, journal={JOURNAL OF APPLIED PHYSICS}, author={Szymanski, Dennis and Khachariya, Dolar and Eldred, Tim B. and Bagheri, Pegah and Washiyama, Shun and Chang, Alexander and Pavlidis, Spyridon and Kirste, Ronny and Reddy, Pramod and Kohn, Erhard and et al.}, year={2022}, month={Jan} } @article{reddy_mecouch_breckenridge_khachariya_bagheri_kim_guan_mita_moody_tweedie_et al._2022, title={Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates}, volume={3}, DOI={10.1002/pssr.202100619}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, publisher={Wiley}, author={Reddy, Pramod and Mecouch, Will and Breckenridge, M. Hayden and Khachariya, Dolar and Bagheri, Pegah and Kim, Ji Hyun and Guan, Yan and Mita, Seiji and Moody, Baxter and Tweedie, James and et al.}, year={2022}, month={Mar}, pages={2100619} } @article{jadhav_bagheri_klump_khachariya_mita_reddy_rathkanthiwar_kirste_collazo_sitar_et al._2022, title={On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters}, volume={11}, DOI={10.1088/1361-6641/ac3710}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, publisher={IOP Publishing}, author={Jadhav, Aakash and Bagheri, Pegah and Klump, Andrew and Khachariya, Dolar and Mita, Seiji and Reddy, Pramod and Rathkanthiwar, Shashwat and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko and et al.}, year={2022}, month={Jan} } @article{rathkanthiwar_bagheri_khachariya_mita_pavlidis_reddy_kirste_tweedie_sitar_collazo_2022, title={Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices}, volume={5}, DOI={10.35848/1882-0786/ac6566}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Mita, Seiji and Pavlidis, Spyridon and Reddy, Pramod and Kirste, Ronny and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2022}, month={May} } @article{khachariya_mita_reddy_dangi_dycus_bagheri_breckenridge_sengupta_rathkanthiwar_kirste_et al._2022, title={Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates}, volume={4}, DOI={10.1063/5.0083966}, journal={APPLIED PHYSICS LETTERS}, author={Khachariya, Dolar and Mita, Seiji and Reddy, Pramod and Dangi, Saroj and Dycus, J. Houston and Bagheri, Pegah and Breckenridge, M. Hayden and Sengupta, Rohan and Rathkanthiwar, Shashwat and Kirste, Ronny and et al.}, year={2022}, month={Apr} } @article{bagheri_kim_washiyama_reddy_klump_kirste_mita_collazo_sitar_2021, title={A pathway to highly conducting Ge-doped AlGaN}, volume={11}, DOI={10.1063/5.0071791}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Kim, Ji Hyun and Washiyama, Shun and Reddy, Pramod and Klump, Andrew and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Nov} } @article{breckenridge_tweedie_reddy_guan_bagheri_szymanski_mita_sierakowski_bockowski_collazo_et al._2021, title={High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0038628}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Guan, Yan and Bagheri, Pegah and Szymanski, Dennis and Mita, Seiji and Sierakowski, Kacper and Bockowski, Michal and Collazo, Ramon and et al.}, year={2021} } @article{breckenridge_bagheri_guo_sarkar_khachariya_pavlidis_tweedie_kirste_mita_reddy_et al._2021, title={High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0042857}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Bagheri, Pegah and Guo, Qiang and Sarkar, Biplab and Khachariya, Dolar and Pavlidis, Spyridon and Tweedie, James and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and et al.}, year={2021} } @article{mirrielees_dycus_baker_reddy_collazo_sitar_lebeau_irving_2021, title={Native oxide reconstructions on AlN and GaN (0001) surfaces}, volume={5}, DOI={10.1063/5.0048820}, journal={JOURNAL OF APPLIED PHYSICS}, author={Mirrielees, Kelsey J. and Dycus, J. Houston and Baker, Jonathon N. and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko and LeBeau, James M. and Irving, Douglas L.}, year={2021}, month={May} } @article{bagheri_reddy_mita_szymanski_kim_guan_khachariya_klump_pavlidis_kirste_et al._2021, title={On the Ge shallow-to-deep level transition in Al-rich AlGaN}, volume={8}, DOI={10.1063/5.0059037}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Reddy, Pramod and Mita, Seiji and Szymanski, Dennis and Kim, Ji Hyun and Guan, Yan and Khachariya, Dolar and Klump, Andrew and Pavlidis, Spyridon and Kirste, Ronny and et al.}, year={2021}, month={Aug} } @article{khachariya_szymanski_breckenridge_reddy_kohn_sitar_collazo_pavlidis_2021, title={On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0039888}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Khachariya, Dolar and Szymanski, Dennis and Breckenridge, M. Hayden and Reddy, Pramod and Kohn, Erhard and Sitar, Zlatko and Collazo, Ramon and Pavlidis, Spyridon}, year={2021} } @article{washiyama_mirrielees_bagheri_baker_kim_guo_kirste_guan_breckenridge_klump_et al._2021, title={Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0035957}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Washiyama, Shun and Mirrielees, Kelsey J. and Bagheri, Pegah and Baker, Jonathon N. and Kim, Ji-Hyun and Guo, Qiang and Kirste, Ronny and Guan, Yan and Breckenridge, M. Hayden and Klump, Andrew J. and et al.}, year={2021} } @article{kirste_sarkar_reddy_guo_collazo_sitar_2021, title={Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength}, volume={12}, DOI={10.1557/s43578-021-00443-8}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kirste, Ronny and Sarkar, Biplab and Reddy, Pramod and Guo, Qiang and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Dec} } @article{reddy_khachariya_mecouch_breckenridge_bagheri_guan_kim_pavlidis_kirste_mita_et al._2021, title={Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN}, volume={11}, DOI={10.1063/5.0062831}, journal={APPLIED PHYSICS LETTERS}, author={Reddy, Pramod and Khachariya, Dolar and Mecouch, Will and Breckenridge, M. Hayden and Bagheri, Pegah and Guan, Yan and Kim, Ji Hyun and Pavlidis, Spyridon and Kirste, Ronny and Mita, Seiji and et al.}, year={2021}, month={Nov} } @article{kim_bagheri_washiyama_klump_kirste_mita_reddy_collazo_sitar_2021, title={Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies}, volume={7}, DOI={10.1063/5.0055409}, journal={APPLIED PHYSICS LETTERS}, author={Kim, Ji Hyun and Bagheri, Pegah and Washiyama, Shun and Klump, Andrew and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Jul} } @article{stein_robbins_reddy_collazo_pavlidis_2021, title={UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators}, DOI={10.1109/RWS50353.2021.9360392}, journal={2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS)}, author={Stein, Shane and Robbins, Max and Reddy, Pramod and Collazo, Ramon and Pavlidis, Spyridon}, year={2021} } @article{al-tawhid_shafe_bagheri_guan_reddy_mita_moody_collazo_sitar_ahadi_2021, title={Weak localization and dimensional crossover in compositionally graded AlxGa1-xN}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0042098}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Al-Tawhid, Athby and Shafe, Abdullah-Al and Bagheri, Pegah and Guan, Yan and Reddy, Pramod and Mita, Seiji and Moody, Baxter and Collazo, Ramon and Sitar, Zlatko and Ahadi, Kaveh}, year={2021} } @article{khachariya_szymanski_sengupta_reddy_kohn_sitar_collazo_pavlidis_2020, title={Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN}, DOI={10.1063/5.0015140}, journal={Journal of Applied Physics}, author={Khachariya, Dolar and Szymanski, Dennis and Sengupta, Rohan and Reddy, Pramod and Kohn, Erhard and Sitar, Zlatko and Collazo, Ramón and Pavlidis, Spyridon}, year={2020}, month={Aug} } @article{klump_hoffmann_kaess_tweedie_reddy_kirste_sitar_collazo_2020, title={Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control}, DOI={10.1063/1.5126004}, journal={Journal of Applied Physics}, author={Klump, A. and Hoffmann, M. P. and Kaess, F. and Tweedie, J. and Reddy, P. and Kirste, R. and Sitar, Z. and Collazo, R.}, year={2020}, month={Jan} } @article{reddy_breckenridge_guo_klump_khachariya_pavlidis_mecouch_mita_moody_tweedie_et al._2020, title={High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates}, DOI={10.1063/1.5138127}, journal={Applied Physics Letters}, author={Reddy, Pramod and Breckenridge, M. Hayden and Guo, Qiang and Klump, Andrew and Khachariya, Dolar and Pavlidis, Spyridon and Mecouch, Will and Mita, Seiji and Moody, Baxter and Tweedie, James and et al.}, year={2020}, month={Feb} } @article{bagheri_reddy_kim_rounds_sochacki_kirste_bockowski_collazo_sitar_2020, title={Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN}, DOI={10.1063/5.0018824}, journal={Applied Physics Letters}, author={Bagheri, Pegah and Reddy, Pramod and Kim, Ji Hyun and Rounds, Robert and Sochacki, Tomasz and Kirste, Ronny and Bockowski, Michał and Collazo, Ramón and Sitar, Zlatko}, year={2020}, month={Aug} } @article{guo_kirste_reddy_mecouch_guan_mita_washiyama_tweedie_sitar_collazo_2020, title={Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding}, volume={7}, DOI={10.35848/1347-4065/abab44}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Guo, Qiang and Kirste, Ronny and Reddy, Pramod and Mecouch, Will and Guan, Yan and Mita, Seiji and Washiyama, Shun and Tweedie, James and Sitar, Zlatko and Collazo, Ramón}, year={2020}, month={Sep} } @article{gleco_reddy_kirste_collazo_lajeunesse_ivanisevic_2020, title={Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations}, volume={3}, ISBN={2576-6422}, DOI={10.1021/acsabm.0c01007}, number={10}, journal={ACS APPLIED BIO MATERIALS}, publisher={American Chemical Society (ACS)}, author={Gleco, Sara and Reddy, Pramod and Kirste, Ronny and Collazo, Ramon and LaJeunesse, Dennis and Ivanisevic, Albena}, year={2020}, pages={7211–7218} } @article{vetter_biliroglu_seyitliyev_reddy_kirste_sitar_collazo_gundogdu_sun_2020, title={Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures}, DOI={10.1063/5.0011009}, journal={Applied Physics Letters}, author={Vetter, Eric and Biliroglu, Melike and Seyitliyev, Dovletgeldi and Reddy, Pramod and Kirste, Ronny and Sitar, Zlatko and Collazo, Ramón and Gundogdu, Kenan and Sun, Dali}, year={2020}, month={Aug} } @article{gleco_noussi_jude_reddy_kirste_collazo_lajeunesse_ivanisevic_2020, title={Oxidative Stress Transcriptional Responses of Escherichia coli at GaN Interfaces}, volume={3}, DOI={10.1021/acsabm.0c01299}, number={12}, journal={ACS Applied Bio Materials}, publisher={American Chemical Society (ACS)}, author={Gleco, Sara and Noussi, Theophraste and Jude, Akamu and Reddy, Pramod and Kirste, Ronny and Collazo, Ramón and LaJeunesse, Dennis and Ivanisevic, Albena}, year={2020}, month={Dec}, pages={9073–9081} } @article{reddy_bryan_bryan_kim_washiyama_kirste_mita_tweedie_irving_sitar_et al._2020, title={Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys}, DOI={10.1063/1.5140995}, journal={Applied Physics Letters}, author={Reddy, Pramod and Bryan, Zachary and Bryan, Isaac and Kim, Ji Hyun and Washiyama, Shun and Kirste, Ronny and Mita, Seiji and Tweedie, James and Irving, Douglas L. and Sitar, Zlatko and et al.}, year={2020}, month={Jan} } @article{reddy_khachariya_szymanski_breckenridge_sarkar_pavlidis_collazo_sitar_kohn_2020, title={Role of polarity in SiN on Al/GaN and the pathway to stable contacts}, volume={2}, DOI={10.1088/1361-6641/ab7775}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reddy, Pramod and Khachariya, Dolar and Szymanski, Dennis and Breckenridge, M Hayden and Sarkar, Biplab and Pavlidis, Spyridon and Collazo, Ramón and Sitar, Zlatko and Kohn, Erhard}, year={2020}, month={May} } @article{breckenridge_guo_klump_sarkar_guan_tweedie_kirste_mita_reddy_collazo_et al._2020, title={Shallow Si donor in ion-implanted homoepitaxial AlN}, volume={116}, DOI={10.1063/1.5144080}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Breckenridge, M. Hayden and Guo, Qiang and Klump, Andrew and Sarkar, Biplab and Guan, Yan and Tweedie, James and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and Collazo, Ramón and et al.}, year={2020}, month={Apr}, pages={172103} } @article{amano_collazo_santi_einfeldt_funato_glaab_hagedorn_hirano_hirayama_ishii_et al._2020, title={The 2020 UV emitter roadmap}, volume={53}, ISBN={1361-6463}, DOI={10.1088/1361-6463/aba64c}, number={50}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, author={Amano, Hiroshi and Collazo, Ramon and Santi, Carlo De and Einfeldt, Sven and Funato, Mitsuru and Glaab, Johannes and Hagedorn, Sylvia and Hirano, Akira and Hirayama, Hideki and Ishii, Ryota and et al.}, year={2020} } @article{bagheri_kirste_reddy_washiyama_mita_sarkar_collazo_sitar_2020, title={The nature of the DX state in Ge-doped AlGaN}, DOI={10.1063/5.0008362}, journal={Applied Physics Letters}, author={Bagheri, Pegah and Kirste, Ronny and Reddy, Pramod and Washiyama, Shun and Mita, Seiji and Sarkar, Biplab and Collazo, Ramón and Sitar, Zlatko}, year={2020}, month={Jun} } @article{washiyama_reddy_sarkar_breckenridge_guo_bagheri_klump_kirste_tweedie_mita_et al._2020, title={The role of chemical potential in compensation control in Si:AlGaN}, DOI={10.1063/1.5132953}, journal={Journal of Applied Physics}, author={Washiyama, Shun and Reddy, Pramod and Sarkar, Biplab and Breckenridge, Mathew H. and Guo, Qiang and Bagheri, Pegah and Klump, Andrew and Kirste, Ronny and Tweedie, James and Mita, Seiji and et al.}, year={2020}, month={Mar} } @inproceedings{al rich algan based apds on single crystal aln with solar blindness and room temperature operation_2019, DOI={10.1109/rapid.2019.8864417}, booktitle={2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)}, year={2019}, month={Aug} } @article{iyer_gulyuk_reddy_kirste_collazo_lajeunesse_ivanisevic_2019, title={Behavior of E. coli with Variable Surface Morphology Changes on Charged Semiconductor Interfaces}, volume={2}, DOI={10.1021/acsabm.9b00573}, number={9}, journal={ACS Applied Bio Materials}, publisher={American Chemical Society (ACS)}, author={Iyer, Divya and Gulyuk, Alexey V. and Reddy, Pramod and Kirste, Ronny and Collazo, Ramon and LaJeunesse, Dennis R. and Ivanisevic, Albena}, year={2019}, month={Sep}, pages={4044–4051} } @article{guo_kirste_mita_tweedie_reddy_moody_guan_washiyama_klump_sitar_et al._2019, title={Design of AlGaN-based quantum structures for low threshold UVC lasers}, DOI={10.1063/1.5125256}, journal={Journal of Applied Physics}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Moody, Baxter and Guan, Yan and Washiyama, Shun and Klump, Andrew and Sitar, Zlatko and et al.}, year={2019}, month={Dec} } @inproceedings{development of near uv laser diodes_2019, DOI={10.1109/rapid.2019.8864425}, booktitle={2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)}, year={2019}, month={Aug} } @article{gulyuk_lajeunesse_reddy_kirste_collazo_ivanisevic_2019, title={Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films}, volume={1}, DOI={10.1021/acsaelm.9b00347}, number={8}, journal={ACS Applied Electronic Materials}, publisher={American Chemical Society (ACS)}, author={Gulyuk, Alexey V. and LaJeunesse, Dennis R. and Reddy, Pramod and Kirste, Ronny and Collazo, Ramon and Ivanisevic, Albena}, year={2019}, month={Aug}, pages={1641–1652} } @article{reddy_kumar_2019, title={Modified approach to modeling barrier inhomogeneity in Schottky diodes}, volume={1}, DOI={10.1088/1361-6641/aafcc2}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Reddy, Pramod and Kumar, Jitendra}, year={2019}, month={Mar} } @article{guo_kirste_mita_tweedie_reddy_washiyama_breckenridge_collazo_sitar_2019, title={The polarization field in Al-rich AlGaN multiple quantum wells}, volume={58}, ISBN={1347-4065}, DOI={10.7567/1347-4065/ab07a9}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Washiyama, Shun and Breckenridge, M. Hayden and Collazo, Ramon and Sitar, Zlatko}, year={2019} } @article{6 kw/cm2 uvc laser threshold in optically pumped lasers achieved by controlling point defect formation_2018, DOI={10.7567/apex.11.082101}, journal={Applied Physics Express}, year={2018}, month={Aug} } @article{washiyama_reddy_kaess_kirste_mita_collazo_sitar_2018, title={A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition}, volume={124}, DOI={10.1063/1.5045058}, number={11}, journal={Journal of Applied Physics}, author={Washiyama, Shun and Reddy, Pramod and Kaess, Felix and Kirste, Ronny and Mita, Seiji and Collazo, Ramón and Sitar, Zlatko}, year={2018}, month={Sep} } @inproceedings{au:ga alloyed clusters to enhance al contacts to p-type gan_2018, DOI={10.1109/rapid.2018.8508914}, booktitle={2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)}, year={2018}, month={Aug} } @article{snyder_lajeunesse_reddy_kirste_collazo_ivanisevic_2018, title={Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films}, volume={10}, DOI={10.1039/c8nr03684e}, number={24}, journal={Nanoscale}, author={Snyder, P.J. and Lajeunesse, D.R. and Reddy, P. and Kirste, R. and Collazo, R. and Ivanisevic, A.}, year={2018}, pages={11506–11516} } @article{snyder_reddy_kirste_collazo_ivanisevic_2018, title={Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior}, volume={2}, DOI={10.1002/smtd.201800016}, number={9}, journal={SMALL METHODS}, author={Snyder, Patrick J. and Reddy, Pramod and Kirste, Ronny and Collazo, Ramon and Ivanisevic, Albena}, year={2018} } @inproceedings{design challenges for mid-uv laser diodes_2018, DOI={10.1109/rapid.2018.8508945}, booktitle={2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)}, year={2018}, month={Aug} } @article{bryan_bryan_washiyama_reddy_gaddy_sarkar_breckenridge_guo_bobea_tweedie_et al._2018, title={Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD}, volume={112}, DOI={10.1063/1.5011984}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bryan, Isaac and Bryan, Zachary and Washiyama, Shun and Reddy, Pramod and Gaddy, Benjamin and Sarkar, Biplab and Breckenridge, M. Hayden and Guo, Qiang and Bobea, Milena and Tweedie, James and et al.}, year={2018}, month={Feb}, pages={062102} } @inproceedings{electrical and structural characterization of si implanted homoepitaxially grown aln_2018, DOI={10.1109/rapid.2018.8508915}, booktitle={2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)}, year={2018}, month={Aug} } @inproceedings{improving the conductivity limits in si doped al rich algan_2018, DOI={10.1109/rapid.2018.8508932}, booktitle={2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID)}, year={2018}, month={Aug} } @article{n- and p- type doping in al-rich algan and aln_2018, DOI={10.1149/08612.0025ecst}, journal={ECS Transactions}, year={2018}, month={Jul} } @article{snyder_reddy_kirste_lajeunesse_collazo_ivanisevic_2018, title={Noninvasive Stimulation of Neurotypic Cells Using Persistent Photoconductivity of Gallium Nitride}, volume={3}, DOI={10.1021/acsomega.7b01894}, number={1}, journal={ACS Omega}, publisher={American Chemical Society (ACS)}, author={Snyder, Patrick J. and Reddy, Pramod and Kirste, Ronny and LaJeunesse, Dennis R. and Collazo, Ramon and Ivanisevic, Albena}, year={2018}, month={Jan}, pages={615–621} } @article{harris_baker_gaddy_bryan_bryan_mirrielees_reddy_collazo_sitar_irving_2018, title={On compensation in Si-doped AlN}, DOI={10.1063/1.5022794}, journal={Applied Physics Letters}, author={Harris, Joshua S. and Baker, Jonathon N. and Gaddy, Benjamin E. and Bryan, Isaac and Bryan, Zachary and Mirrielees, Kelsey J. and Reddy, Pramod and Collazo, Ramón and Sitar, Zlatko and Irving, Douglas L.}, year={2018}, month={Apr} } @inproceedings{on contacts to iii-nitride deep-uv emitters_2018, DOI={10.1109/icmap.2018.8354575}, booktitle={2018 3rd International Conference on Microwave and Photonics (ICMAP)}, year={2018}, month={Feb} } @article{reddy_washiyama_mecouch_hernandez-balderrama_kaess_breckenridge_sarkar_haidet_franke_kohn_et al._2018, title={Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition}, volume={36}, DOI={10.1116/1.5050501}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Reddy, Pramod and Washiyama, Shun and Mecouch, Will and Hernandez-Balderrama, Luis H. and Kaess, Felix and Breckenridge, M. Hayden and Sarkar, Biplab and Haidet, Brian B. and Franke, Alexander and Kohn, Erhard and et al.}, year={2018} } @article{alden_harris_bryan_baker_reddy_mita_callsen_hoffmann_irving_collazo_et al._2018, title={Point-Defect Nature of the Ultraviolet Absorption Band in AlN}, volume={9}, DOI={10.1103/physrevapplied.9.054036}, number={5}, journal={Physical Review Applied}, author={Alden, D. and Harris, J.S. and Bryan, Z. and Baker, J.N. and Reddy, Pramod and Mita, S. and Callsen, G. and Hoffmann, A. and Irving, D.L. and Collazo, R. and et al.}, year={2018} } @article{snyder_reddy_kirste_lajeunesse_collazo_ivanisevic_2018, title={Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior}, volume={8}, DOI={10.1039/c8ra06836d}, number={64}, journal={RSC ADVANCES}, author={Snyder, Patrick J. and Reddy, Pramod and Kirste, Ronny and LaJeunesse, Dennis R. and Collazo, Ramon and Ivanisevic, Albena}, year={2018}, pages={36722–36730} } @article{reddy_kaess_tweedie_kirste_mita_collazo_sitar_2017, title={Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers}, volume={111}, DOI={10.1063/1.5000720}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reddy, Pramod and Kaess, Felix and Tweedie, James and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Oct}, pages={152101} } @article{reddy_sarkar_kaess_gerhold_kohn_collazo_sitar_2017, title={Defect-free Ni/GaN Schottky barrier behavior with high temperature stability}, volume={110}, DOI={10.1063/1.4973762}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reddy, Pramod and Sarkar, Biplab and Kaess, Felix and Gerhold, Michael and Kohn, Erhard and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Jan}, pages={011603} } @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, DOI={10.1063/1.4995239}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sarkar, Biplab and Mita, Seiji and Reddy, Pramod and Klump, Andrew and Kaess, Felix and Tweedie, James and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Kohn, Erhard and et al.}, year={2017}, month={Jul}, pages={032109} } @inproceedings{sarkar_reddy_kaess_haidet_tweedie_mita_kirste_kohn_collazo_sitar_et al._2017, title={Material considerations for the development of III-nitride power devices}, volume={80}, DOI={10.1149/08007.0029ecst}, number={7}, booktitle={ECS Transactions}, author={Sarkar, B. and Reddy, Pramod and Kaess, F. and Haidet, B.B. and Tweedie, J. and Mita, S. and Kirste, R. and Kohn, E. and Collazo, R. and Sitar, Z. and et al.}, year={2017}, pages={29–36} } @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, DOI={10.7567/jjap.56.100302}, number={10}, journal={Japanese Journal of Applied Physics}, publisher={Japan Society of Applied Physics}, author={Haidet, Brian B. and Sarkar, Biplab and Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Sep}, pages={100302} } @article{sarkar_reddy_klump_kaess_rounds_kirste_mita_kohn_collazo_sitar_2017, title={On Ni/Au Alloyed Contacts to Mg-Doped GaN}, volume={9}, DOI={10.1007/s11664-017-5775-3}, journal={Journal of Electronic Materials}, publisher={Springer Nature}, author={Sarkar, Biplab and Reddy, Pramod and Klump, Andrew and Kaess, Felix and Rounds, Robert and Kirste, Ronny and Mita, Seiji and Kohn, Erhard and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Sep} } @article{sarkar_haidet_reddy_kirste_collazo_sitar_2017, title={Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment}, volume={10}, DOI={10.7567/apex.10.071001}, number={7}, journal={Applied Physics Express}, publisher={Japan Society of Applied Physics}, author={Sarkar, Biplab and Haidet, Brian B. and Reddy, Pramod and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Jun}, pages={071001} } @article{reddy_washiyama_kaess_kirste_mita_collazo_sitar_2017, title={Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN}, volume={122}, DOI={10.1063/1.5002682}, number={24}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reddy, Pramod and Washiyama, Shun and Kaess, Felix and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2017}, month={Dec}, pages={245702} } @phdthesis{reddy_2016, title={A Study of Surfaces, Interfaces and Point Defect Control in III-Nitrides}, journal={Ph.D. Thesis}, author={Reddy, Pramod}, year={2016} } @article{kaess_mita_xie_reddy_klump_hernandez-balderrama_washiyama_franke_kirste_hoffmann_et al._2016, title={Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition}, volume={120}, DOI={10.1063/1.4962017}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kaess, Felix and Mita, Seiji and Xie, Jingqiao and Reddy, Pramod and Klump, Andrew and Hernandez-Balderrama, Luis H. and Washiyama, Shun and Franke, Alexander and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2016}, month={Sep}, pages={105701} } @article{alden_guo_kirste_kaess_bryan_troha_bagal_reddy_hernandez-balderrama_franke_et al._2016, title={Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications}, volume={108}, DOI={10.1063/1.4955033}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Alden, D. and Guo, W. and Kirste, R. and Kaess, F. and Bryan, I. and Troha, T. and Bagal, A. and Reddy, P. and Hernandez-Balderrama, Luis H. and Franke, A. and et al.}, year={2016}, month={Jun}, pages={261106} } @article{reddy_washiyama_kaess_breckenridge_hernandez-balderrama_haidet_alden_franke_sarkar_kohn_et al._2016, title={High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies}, volume={119}, DOI={10.1063/1.4945775}, number={14}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reddy, Pramod and Washiyama, Shun and Kaess, Felix and Breckenridge, M. Hayden and Hernandez-Balderrama, Luis H. and Haidet, Brian B. and Alden, Dorian and Franke, Alexander and Sarkar, Biplab and Kohn, Erhard and et al.}, year={2016}, month={Apr}, pages={145702} } @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, DOI={10.1063/1.4967397}, number={18}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016}, month={Nov}, pages={185704} } @article{kaess_reddy_alden_klump_hernandez-balderrama_franke_kirste_hoffmann_collazo_sitar_et al._2016, title={The effect of illumination power density on carbon defect configuration in silicon doped GaN}, volume={120}, DOI={10.1063/1.4972468}, number={23}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kaess, Felix and Reddy, Pramod and Alden, Dorian and Klump, Andrew and Hernandez-Balderrama, Luis H. and Franke, Alexander and Kirste, Ronny and Hoffmann, Axel and Collazo, Ramón and Sitar, Zlatko and et al.}, year={2016}, month={Dec}, pages={235705} } @article{haidet_bryan_reddy_bryan_collazo_sitar_2015, title={A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN}, volume={117}, DOI={10.1063/1.4923062}, number={24}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Haidet, Brian B. and Bryan, Isaac and Reddy, Pramod and Bryan, Zachary and Collazo, Ramón and Sitar, Zlatko}, year={2015}, month={Jun}, pages={245702} } @article{reddy_bryan_bryan_tweedie_washiyama_kirste_mita_collazo_sitar_2015, title={Charge neutrality levels, barrier heights, and band offsets at polar AlGaN}, volume={107}, DOI={10.1063/1.4930026}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Washiyama, Shun and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2015}, month={Aug}, pages={091603} } @article{guo_kirste_bryan_bryan_hussey_reddy_tweedie_collazo_sitar_2015, title={KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode}, volume={106}, DOI={10.1063/1.4913705}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guo, W. and Kirste, R. and Bryan, I. and Bryan, Z. and Hussey, L. and Reddy, P. and Tweedie, J. and Collazo, R. and Sitar, Z.}, year={2015}, month={Feb}, pages={082110} } @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bryan, Zachary and Bryan, Isaac and Gaddy, Benjamin E. and Reddy, Pramod and Hussey, Lindsay and Bobea, Milena and Guo, Wei and Hoffmann, Marc and Kirste, Ronny and Tweedie, James and et al.}, year={2014}, month={Dec}, pages={222101} } @article{reddy_bryan_bryan_tweedie_kirste_collazo_sitar_2014, title={Schottky contact formation on polar and non-polar AlN}, volume={116}, DOI={10.1063/1.4901954}, number={19}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Tweedie, James and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2014}, month={Nov}, pages={194503} } @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, DOI={10.1063/1.4896377}, number={12}, journal={Journal of Applied Physics}, author={Reddy, Pramod and Bryan, I. and Bryan, Z. and Guo, W. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2014} } @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, DOI={http://dx.doi.org/10.1063/1.4896377}, number={12}, journal={Journal of Applied Physics}, author={Reddy, Pramod and Bryan, Isaac and Bryan, Zachary and Guo, Wei and Hussey, Lindsay and Collazo, Ramon and Sitar, Zlatko}, year={2014}, pages={-} } @inproceedings{devi_reddy_singh_singla_ghanshyam_paul pawan kapur_vishal_2012, title={Isotherm behavior studies of silica nanoparticles: Role of surfactant concentration and particle size}, DOI={10.1109/ISPTS.2012.6260884}, booktitle={Proceedings - ISPTS-1, 1st International Symposium on Physics and Technology of Sensors}, author={Devi, P. and Reddy, P. and Singh, S. and Singla, M.L. and Ghanshyam, C. and Paul Pawan Kapur, A.K. and Vishal}, year={2012}, pages={79–82} } @inproceedings{optical and i-v studies on au-zno-ito based uv-sensing devices_2012, DOI={10.1117/12.925526}, booktitle={16th International Workshop on Physics of Semiconductor Devices}, year={2012}, month={Oct} } @article{sensing behavior study of silica-coated ag nanoparticles deposited on glassy carbon toward nitrobenzene_2012, DOI={10.1007/s11051-012-1172-2}, journal={Journal of Nanoparticle Research}, year={2012} } @article{synthesis and optical characterization of zno quantum dots and nanorods_2012, DOI={10.1166/asem.2012.1175}, journal={Advanced Science, Engineering and Medicine}, year={2012}, month={Jun} } @article{kohli_devi_reddy_raina_singla_2012, title={Synthesis and electrical behavior study of Mn