@article{zhang_yang_gao_leung_bell_2020, title={Health and economic impacts of air pollution induced by weather extremes over the continental US}, volume={143}, ISSN={["1873-6750"]}, DOI={10.1016/j.envint.2020.105921}, abstractNote={Extreme weather events may enhance ozone (O3) and fine particulate matter (PM2.5) pollution, causing additional adverse health effects. This work aims to evaluate the health and associated economic impacts of changes in air quality induced by heat wave, stagnation, and compound extremes under the Representative Concentration Pathways (RCP) 4.5 and 8.5 climate scenarios. The Environmental Benefits Mapping and Analysis Program-Community Edition is applied to estimate health and related economic impacts of changes in surface O3 and PM2.5 levels due to heat wave, stagnation, and compound extremes over the continental U.S. during past (i.e., 2001–2010) and future (i.e., 2046–2055) decades under the two RCP scenarios. Under the past and future decades, the weather extremes-induced concentration increases may lead to several tens to hundreds O3-related deaths and several hundreds to over ten thousands PM2.5-related deaths annually. High mortalities and morbidities are estimated for populated urban areas with strong spatial heterogeneities. The estimated annual costs for these O3 and PM2.5 related health outcomes are $5.5–12.5 and $48.6–140.7 billion U.S. dollar for mortalities, and $8.9–97.8 and $19.5–112.5 million for morbidities, respectively. Of the extreme events, the estimated O3– and PM2.5–related mortality and morbidity attributed to stagnation are the highest, followed by heat wave or compound extremes. Large increases in heat wave and compound extreme events in the future decade dominate changes in mortality during these two extreme events, whereas population growth dominates changes in mortality during stagnation that is projected to occur less frequently. Projected reductions of anthropogenic emissions under both RCP scenarios compensate for the increased mortality due to increased occurrence for heat wave and compound extremes in the future. These results suggest a need to further reduce air pollutant emissions during weather extremes to minimize the adverse impacts of weather extremes on air quality and human health.}, journal={ENVIRONMENT INTERNATIONAL}, author={Zhang, Yang and Yang, Peilin and Gao, Yang and Leung, Ruby L. and Bell, Michelle L.}, year={2020}, month={Oct} }
 @article{yang_prater_liu_glass_davis_2005, title={The formation of epitaxial hexagonal boron nitride on nickel substrates}, volume={34}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-005-0165-7}, number={12}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Yang, PC and Prater, JT and Liu, W and Glass, JT and Davis, RF}, year={2005}, month={Dec}, pages={1558–1564} }
 @article{yang_wolden_liu_schlesser_davis_prater_sitar_1998, title={Coalesced oriented diamond films on nickel}, volume={13}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1998.0157}, abstractNote={The growth of coalesced, highly oriented diamond films has been achieved on nickel substrates using a multistep process that consisted of (i) seeding the Ni surface with 0.5 μm diamond powder, (ii) annealing at 1100 °C in a hydrogen atmosphere, and (iii) growth at 900 °C in a mixture of hydrogen and 0.5% methane. Auger depth profile analysis of a sample quenched after the annealing stage showed the presence of significant amounts of carbon (6 at. %) close to the substrate surface and about 3 at.% deeper in the substrate. The loss of carbon into the substrate resulted in relatively low nucleation density. The addition of methane into the gas phase during the annealing stage proved very effective in compensating for the diffusion. An addition of 0.5% methane in the gas phase produced optimum results, as the nucleation density, orientation of diamond particles, and uniformity were substantially improved. Substrates nucleated under these conditions were grown out into coalesced, 30 μm thick films. Both (100) and (111) oriented films showed a high degree of orientation and Raman spectra obtained from these orientations showed intense and narrow diamond signature peaks with FWHM's of 5 and 8 cm-1, respectively.}, number={5}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Yang, PC and Wolden, CA and Liu, W and Schlesser, R and Davis, RF and Prater, JT and Sitar, Z}, year={1998}, month={May}, pages={1120–1123} }
 @article{sitar_liu_yang_wolden_schlesser_prater_1998, title={Heteroepitaxial nucleation of diamond on nickel}, volume={7}, ISSN={["0925-9635"]}, DOI={10.1016/S0925-9635(97)00244-6}, abstractNote={Highly oriented diamond has been grown on (100) nickel substrates by the hot filament chemical vapor deposition method. Epitaxial nuclei were obtained by a diamond powder seeding and high temperature annealing process. Since the timing of the process was crucial for the achievement of a high degree of orientation and high density of diamond nuclei, a real-time, in-situ laser reflectometry system was developed to monitor changes in surface morphology observed during the high temperature annealing stage. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the samples quenched at sequential stages of the process. It was concluded that the scattered light signal can be effectively used as a process steering parameter. Using this technique, oriented nucleation and growth of diamond on Ni was reproducibly achieved. Auger spectroscopy showed that up to 6 at% of carbon was dissolved in the nickel surface layer. The investigation of interfacial microstructures and phases involved by transmission electron microscopy revealed the formation of Ni4C already in the early stages of nucleation. This phase was manifested as coherent precipitates and is believed to have been the precursor for diamond nucleation. Perfectly epitaxial diamond was grown by this process. The epitaxial relationship was determined by cross-sectional transmission electron microscopy and selected area diffraction analysis.}, number={2-5}, journal={DIAMOND AND RELATED MATERIALS}, author={Sitar, Z and Liu, W and Yang, PC and Wolden, CA and Schlesser, R and Prater, JT}, year={1998}, month={Feb}, pages={276–282} }
 @misc{zhu_yang_glass_1998, title={Oriented diamond film structures on nondiamond substrates}, volume={5,849,413}, number={1998 Dec. 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhu, W. and Yang, P.-C. and Glass, J. T.}, year={1998} }
 @article{yang_liu_schlesser_wolden_davis_prater_sitar_1998, title={Surface melting in the heteroepitaxial nucleation of diamond on Ni}, volume={187}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(97)00854-3}, abstractNote={Surface melting associated with the heteroepitaxial nucleation of diamond on Ni was investigated. Scanning electron microscopy of quenched samples revealed flow patterns and a recrystallized surface morphology. A combination of techniques including in situ optical monitoring, differential thermal analysis, Auger depth profile analysis, and cross-section transmission electron microscopy (TEM) analysis were performed to identify the nature of the molten layer. Data obtained from different experiments were in good mutual agreement. All experimental results strongly indicated that a molten Ni–C–H surface layer was involved in the nucleation process. The presence of both carbon and atomic hydrogen played an important role in the depression of the melting point which was measured to be >300°C less than the melting point of pure Ni.}, number={1}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yang, PC and Liu, W and Schlesser, R and Wolden, CA and Davis, RF and Prater, JT and Sitar, Z}, year={1998}, month={Apr}, pages={81–88} }
 @article{liu_yang_wolden_davis_prater_sitar_1998, title={Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.367885}, abstractNote={Transmission electron microscopy (TEM) was used to investigate the interfacial microstructure and the phases that developed during the nucleation and growth of oriented diamond on Ni by a hot filament process. Oriented Ni4C nuclei were identified by plan-view TEM in a sample quenched during the nucleation stage. Likewise, the presence of the Ni4C phase between the diamond and the Ni substrate was observed by cross-section TEM in samples grown for several hours. The orientational relationship among the diamond, Ni4C, and Ni substrate was examined by selected area diffraction. Diamond and Ni4C interfacial phase had a good epitaxial relationship, while the interfacial Ni4C phase and the Ni substrate developed with a small misfit and rotation. Based on these experimental results, the nucleation mechanism of oriented diamond growth on Ni is proposed.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Liu, W and Yang, PC and Wolden, CA and Davis, RF and Prater, JT and Sitar, Z}, year={1998}, month={Jun}, pages={7658–7663} }
 @article{yang_schlesser_wolden_liu_davis_sitar_prater_1997, title={Control of diamond heteroepitaxy on nickel by optical reflectance}, volume={70}, ISSN={["0003-6951"]}, DOI={10.1063/1.118756}, abstractNote={Real time in situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Using this process, oriented nucleation and growth of diamond on Ni can be repeatedly achieved.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={Yang, PC and Schlesser, R and Wolden, CA and Liu, W and Davis, RF and Sitar, Z and Prater, JT}, year={1997}, month={Jun}, pages={2960–2962} }
 @misc{yang_zhu_glass_1996, title={Diamond films on nondiamond substrates}, volume={5,487,945}, number={1996 Jan. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Yang, P. and Zhu, W. and Glass, J. T.}, year={1996} }
 @misc{zhu_yang_glass_1995, title={Method of fabricating oriented diamond films on nondiamond substrates and related structures}, volume={5,449,531}, number={1995 Sep. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhu, W. and Yang, P. and Glass, J. T.}, year={1995} }
 @misc{yang_zhu_glass_1994, title={Method for fabricating diamond films on nondiamond substrates and related structures}, volume={5,298,286}, number={1994 Mar. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Yang, P. and Zhu, W. and Glass, J. T.}, year={1994} }