@article{schimizzi_trew_bilbro_2012, title={A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs}, volume={59}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2012.2211360}, abstractNote={A temperature-dependent impact-ionization-initiated RF breakdown model in the 2DEG channel of AlGaN/GaN HFETs is reported. When operating these devices in RF power amplifier circuits, impact ionization in the channel has a significant effect upon gain saturation, power-added efficiency, and output power. An analytical physics-based model of channel breakdown is formulated based on TCAD investigations of the internal device behavior. This model is integrated with an existing physics-based HFET compact model and accurately predicts large-signal device performance. Values of thermal resistance and the breakdown temperature coefficient were extracted from simulations of an industrial HFET and are in agreement with the literature, thus validating that the model captures the dominant breakdown mechanism.}, number={11}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Schimizzi, Ryan D. and Trew, Robert J. and Bilbro, Griff L.}, year={2012}, month={Nov}, pages={2973–2978} }
 @inproceedings{trew_hou_schimizzi_goswami_bilbro_2012, title={Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design}, DOI={10.1109/icwits.2012.6417696}, abstractNote={A historical review of large-signal compact FET models is presented. Device models used in circuit design typically are based upon equivalent circuit techniques. However, it is possible to develop physics-based compact models. In this work, a new physics-based model for AlGaN/GaN HFETs that can be integrated into the commercial simulators is described. The new model has demonstrated good agreement between measured and simulated data for communications band power amplifiers.}, booktitle={2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS)}, author={Trew, R. J. and Hou, D. and Schimizzi, R. and Goswami, A. and Bilbro, G. L.}, year={2012} }