Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 92(2), 163–166.
By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany
author keywords: Pendeo-epitaxial growth; Gallium nitride; Vapor phase deposition; Dislocation density
Source: Web Of Science
Added: January 10, 2022
