@article{zhou_li_brady_eldred_garcia_ma_wang_hu_li_liu_2024, title={Long-term oxidation and chromium evaporation behavior of Al2O3-forming austenitic stainless steel for 900 °C balance-of-plant components applications in solid oxide fuel cells}, volume={50}, ISSN={["1879-3487"]}, DOI={10.1016/j.ijhydene.2023.10.041}, abstractNote={The long-term operation of balance-of-plant (BoP) components in solid oxide fuel cells (SOFCs) relies on the presence of a stable and durable oxide layer. In this study, we investigate the oxidation and chromium (Cr) evaporation behaviors of two developmental alumina-forming austenitic (AFA) alloys compared to chromia-forming alloy 625 at 900 °C in air with 10% water vapor. Transpiration tests, weight gain tests, X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis, and scanning transmission electron microscopy with energy dispersive X-ray analysis are employed to evaluate the oxidation and Cr evaporation behaviors. Our findings reveal that alloy 625 exhibits significantly higher rates of Cr evaporation compared to OC11 (Y and Hf additions) and OC11LZ (Y and Zr additions), with evaporation amounts ∼56 and ∼28 times greater, respectively. The observed differences between OC11 and OC11LZ can be attributed to variations in the formed oxide scales during long-term operation. Furthermore, we examine the influence of Hf and Zr reactive elements on the long-term oxidation and chromium evaporation behaviors, providing insights into the role of these elements in enhancing the performance and stability of the alloys.}, journal={INTERNATIONAL JOURNAL OF HYDROGEN ENERGY}, author={Zhou, Lingfeng and Li, Wenyuan and Brady, Michael P. and Eldred, Tim B. and Garcia, Roberto and Ma, Liang and Wang, Yi and Hu, Shanshan and Li, Wei and Liu, Xingbo}, year={2024}, month={Jan}, pages={1109–1125} }
 @article{zhou_brady_li_eldred_garcia_zeng_ma_wang_hu_liu_2022, title={Alumina-forming austenitic stainless steel for high durability and chromium-evaporation minimized balance of plant components in solid oxide fuel cells}, volume={47}, ISSN={["1879-3487"]}, DOI={10.1016/j.ijhydene.2022.09.010}, abstractNote={The chromium evaporation and oxidation behaviors of alumina-forming austenitic stainless steels are systematically investigated at 800 °C in air +10% H2O relative to 310S for 5000 h. Cr evaporation rates of 310S are about 35 times higher than AFA alloys after 5000 h. Relatively rapid oxidation is observed on 310S after only one 500 h cycle, followed by a modest degree of mass loss and spallation, while the AFA alloys show high oxidation resistance throughout the entire test. Continuous inner alumina layer formed on AFA alloys stays compact and stable after 5000 h which greatly reduces the Cr evaporation.}, number={90}, journal={INTERNATIONAL JOURNAL OF HYDROGEN ENERGY}, author={Zhou, Lingfeng and Brady, Michael P. and Li, Wenyuan and Eldred, Tim B. and Garcia, Roberto and Zeng, Zhipeng and Ma, Liang and Wang, Yi and Hu, Shanshan and Liu, Xingbo}, year={2022}, month={Nov}, pages={38334–38347} }
 @article{zhou_finklea_li_shi_brady_eldred_garcia_tian_ma_wang_et al._2022, title={Deconvolution of deterioration of anode-supported cells by chromium poisoning from alumina-forming austenitic stainless steels for balance of plant applications in solid oxide fuel cells}, volume={428}, ISSN={["1873-3859"]}, DOI={10.1016/j.electacta.2022.140933}, abstractNote={Al2O3-forming austenitic (AFA) stainless steels are potential replacements for the existing balance of plant (BoP) components in solid oxide fuel cells (SOFCs). In this study, chromium (Cr) poisoning of anode supported cells (ASCs) coupled with various alloys was analyzed by the distribution of relaxation times (DRT). The performance deterioration of ASCs was mainly attributed to the increased polarization resistances of chemisorption of oxygen on the cathode and the oxygen diffusion and reaction in the cathode. The superior performance of ASC coupled with AFA alloys was due to the formed continuous alumina layer which can vastly decrease the evaporated gaseous Cr species, thus alleviating the Cr poisoning on the cathode region.}, journal={ELECTROCHIMICA ACTA}, author={Zhou, Lingfeng and Finklea, Harry O. and Li, Wenyuan and Shi, Wangying and Brady, Michael P. and Eldred, Tim B. and Garcia, Roberto and Tian, Hanchen and Ma, Liang and Wang, Yi and et al.}, year={2022}, month={Oct} }
 @article{garcia_giannuzzi_stevie_strader_2022, title={Enhanced focused ion beam milling with use of nested raster patterns}, volume={40}, ISSN={["2166-2754"]}, DOI={10.1116/6.0001411}, abstractNote={The focused ion beam (FIB) instrument is designed to provide the removal of material with nanometer-scale precision. However, one often needs to remove a substantial amount of material to expose the region of interest or prepare a specimen for transmission electron microscopy analysis. The maximum current available on Ga+ FIB sources is less than 100 nA, and this is a limiting factor when removal on the millimeter scale is desired. Any improvement in the removal rate reduces the analysis time and increases the range of samples that can be analyzed. Optimization of ion beam parameters, such as dwell time and overlap, can improve material removal and reduce redeposition. Since sputtering occurs faster at an edge, the use of a nested arrangement of raster patterns to more frequently present an edge to the ion beam was able to improve the removal of material at the region of interest by over 30% in the silicon and polycrystalline copper substrates used for this study. A confocal laser scanning microscope made possible an accurate determination of the material removed.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Garcia, Roberto and Giannuzzi, Lucille A. and Stevie, Fred A. and Strader, Phillip}, year={2022}, month={Jan} }
 @article{sharma_dakmak_yuan_garcia_batchelor_vo-dinh_ghosh_dhawan_2022, title={Voltage-tunable surface-enhanced Raman scattering substrates based on electroactive polymeric membranes containing plasmonic nanoparticles}, volume={1}, ISSN={["2770-0208"]}, DOI={10.1364/OPTCON.455460}, abstractNote={We describe voltage-controlled surface-enhanced Raman scattering (SERS) substrates in which the SERS-signals can be actively modulated by applying voltage. These SERS-substrates employ a dielectric electroactive polymer (D-EAP) membrane with a pair of electrically-actuated active regions. When these regions are simultaneously activated, they produce an in-plane contractile strain in the regions of the D-EAP where SERS dye-coated nanoparticles are placed. We demonstrate that SERS-signals from dye-coated silver nanoparticles, deposited on the D-EAP membrane, increases by ∼100% upon application of an actuating voltage. Upon removal of the voltage, actuated active-areas move towards their original positions, leading to a decrease in the SERS-signals.}, number={12}, journal={OPTICS CONTINUUM}, author={Sharma, Yashna and Dakmak, Enes and Yuan, Hsiang-Kuo and Garcia, Roberto and Batchelor, Dale and Vo-dinh, Tuan and Ghosh, Tushar and Dhawan, Anuj}, year={2022}, month={Dec}, pages={2426–2433} }
 @article{teller_boyd_lecompte_kennett_west_telka_diaz_adedeji_batchelor_mooney_et al._2020, title={A multi-proxy study of changing environmental conditions in a Younger Dryas sequence in southwestern Manitoba, Canada, and evidence for an extraterrestrial event}, volume={93}, ISSN={["1096-0287"]}, DOI={10.1017/qua.2019.46}, abstractNote={Abstract}, number={1}, journal={QUATERNARY RESEARCH}, author={Teller, James and Boyd, Matthew and LeCompte, Malcolm and Kennett, James and West, Allen and Telka, Alice and Diaz, Aura and Adedeji, Victor and Batchelor, Dale and Mooney, Charles and et al.}, year={2020}, month={Jan}, pages={60–87} }
 @article{zhou_stevie_garcia_2020, title={Analysis of permethrin treated fabric using ToF-SIMS}, volume={38}, ISSN={["2166-2746"]}, DOI={10.1116/1.5141467}, abstractNote={Recent studies have shown that it is possible to use ToF-SIMS to identify and quantify mosquito insecticides, such as permethrin and deltamethrin, on mosquito netting. The insecticide in those studies was incorporated in the netting fiber. Permethrin treated fabric is in common usage to provide mosquito repellent clothing and is the only approved insecticide for apparel. The insecticide is applied to the fabric and will no longer be effective after a certain number of washing cycles. ToF-SIMS analyses have now been conducted on fabric composed of nylon and cotton before washing and after 10 and 30 washes to measure the reduction in insecticides. The results show a significant decrease in the insecticide between 10 and 30 washes. The 30 washes sample was known to be no longer effective against mosquitoes. ToF-SIMS was also able to differentiate cotton and nylon fibers. A cross-sectional analysis of cryomicrotomed samples showed the distribution of the insecticide in the individual fibers. The insecticide was found to penetrate completely through the fibers during its application. After ten washes, the insecticide was depleted more rapidly in the cotton than the nylon fibers. The results have implications for the number of acceptable washes for mosquito repellent fabric.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Zhou, Chuanzhen and Stevie, Fred and Garcia, Roberto}, year={2020}, month={May} }
 @article{shekhawat_walters_chung_garcia_liu_jones_nishida_moghaddam_2020, title={Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films}, volume={9}, ISSN={["2162-8777"]}, DOI={10.1149/2162-8777/ab6b13}, abstractNote={The effect of furnace annealing on the ferroelectricity, leakage current, and wake-up effect in Hf0.5Zr0.5O2 (HZO) ultrathin film is studied as a function of furnace annealing temperature and gas environment after crystallizing the films with rapid thermal annealing in the presence of a TiN capping electrode. HZO films are deposited using atomic layer deposition in a Ge-HZO-TiN stack with Pt as the top contact electrode. The increment in the remanent polarization (Pr) is higher when the films are furnace annealed in the forming gas ambient. Forming gas furnace annealed films show an order of magnitude less leakage current as compared to the nitrogen annealed films. Dynamic hysteresis current measurements of the HZO ultrathin films show a faster merging of the four switching peaks after cycling the virgin forming gas furnace annealed films. H-incorporation during forming gas furnace annealing does not degrade the ferroelectric properties of HZO ultrathin films unlike conventional ferroelectrics, such as PZT or SBT. Higher Pr, lower leakage current, and an improved wake-up effect of the HZO ultrathin films show its resistance to degradation by forming gas furnace annealing, which makes ferroelectric HfO2 an ideal material for next-generation ferroelectric memory devices.}, number={2}, journal={ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}, author={Shekhawat, Aniruddh and Walters, Glen and Chung, Ching-Chang and Garcia, Roberto and Liu, Yang and Jones, Jacob and Nishida, Toshikazu and Moghaddam, Saeed}, year={2020}, month={Jan} }
 @article{nalamati_devkota_li_lavelle_huet_snyder_penn_garcia_reynolds_iyer_2020, title={Hybrid GaAsSb/GaAs Heterostructure Core-Shell Nanowire/Graphene and Photodetector Applications}, volume={2}, ISBN={2637-6113}, DOI={10.1021/acsaelm.0c00433}, abstractNote={We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam ep...}, number={10}, journal={ACS APPLIED ELECTRONIC MATERIALS}, author={Nalamati, Surya and Devkota, Shisir and Li, Jia and Lavelle, Robert and Huet, Benjamin and Snyder, David and Penn, Aubrey and Garcia, Roberto and Reynolds, Lewis, Jr. and Iyer, Shanthi}, year={2020}, pages={3109–3120} }
 @article{stevie_garcia_shallenberger_newman_donley_2020, title={Sample handling, preparation and mounting for XPS and other surface analytical techniques}, volume={38}, ISSN={["1520-8559"]}, DOI={10.1116/6.0000421}, abstractNote={Sample preparation and mounting are important aspects of x-ray photoelectron spectroscopy (XPS) analysis. New users do not know many techniques that are familiar to analysts with years of experience, and these observations and “tricks of the trade” are typically not published. This article is intended to convey the experience of the authors in this field who have creatively analyzed a wide range of samples. Samples can include solids, powders, fibers, porous solids, and even liquids. This information is also important to anyone submitting samples for analysis, since the preparation of the sample may influence the usefulness of the data collected. These techniques are also applicable to other surface analysis methods.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Stevie, Fred A. and Garcia, Roberto and Shallenberger, Jeffrey and Newman, John G. and Donley, Carrie L.}, year={2020}, month={Dec} }
 @article{shekhawat_walters_chung_garcia_liu_jones_nishida_moghaddam_2019, title={Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films}, volume={677}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2019.03.031}, abstractNote={The effect of furnace annealing on the ferroelectricity and crystal phase of Hf0.5ZrO2 (HZO) ultrathin films is studied as a function of film thickness. HZO films are deposited using atomic layer deposition (ALD) in a Ge-HZO-TiN stack with Pt as the top contact electrode. Furnace annealing is carried out after crystallizing the films with rapid thermal annealing in the presence of a TiN capping electrode. While furnace annealing did not have much impact on the 108 ALD cycles (~11 nm) film, it enhanced the ferroelectricity of the 44 ALD cycles film (~4.5 nm). Positive-up-negative-down tests provide evidence of ferroelectricity in the 40 ALD cycles (~4 nm) furnace annealed film after cycling the film at higher fields. Grazing incidence X-ray diffraction shows that the non-centrosymmetric orthorhombic phase responsible for ferroelectricity increased after furnace annealing in thinner films, but little change occurred in the 108 ALD cycles film that was rich in orthorhombic phase prior to furnace annealing. An analysis of the HZO films with a tapping mode atomic force microscope shows grain growth in the 44, and 40 ALD cycles films after furnace annealing.}, journal={THIN SOLID FILMS}, author={Shekhawat, Aniruddh and Walters, Glen and Chung, Ching-Chang and Garcia, Roberto and Liu, Yang and Jones, Jacob and Nishida, Toshikazu and Moghaddam, Saeed}, year={2019}, month={May}, pages={142–149} }
 @article{garcia_stevie_giannuzzi_2019, title={FIB Sample Preparation for In Depth EDS Analysis}, volume={25}, DOI={10.1017/s1431927619005300}, abstractNote={The FIB has been extensively used to prepare specimens for many analytical techniques [1,2]. FIB instruments are typically paired with an SEM column but lack elemental analysis capability. AES, XPS, SIMS, and EDS are the most common techniques for elemental analysis and EDS is probably the easiest to add to an FIB platform. An issue with EDS is the ability to provide in-depth analysis. The EDS analyzed region can be micrometers for a 30 keV electron beam. It is possible to prepare a lift out specimen and then perform a line scan with EDS, [3] but not everyone has lift out capability. Knowledge of the penetration range of the electron beam coupled with material removal using the ion beam can provide significant information about the specimen. Earlier work showed that removal of material behind the region of interest could improve EDS image quality. [4] Cross sections can also be prepared and then studied with EDS. However, the tilted geometry of a FIB section can make interpretation difficult.}, number={S2}, journal={Microscopy and Microanalysis}, publisher={Oxford University Press (OUP)}, author={Garcia, Roberto and Stevie, Fred A. and Giannuzzi, Lucille}, year={2019}, month={Aug}, pages={914–915} }
 @article{zhou_sun_garcia_stevie_2018, title={Determination of chemical composition in multilayer polymer film using ToF-SIMS}, volume={10}, ISSN={["1759-9679"]}, DOI={10.1039/c8ay00344k}, abstractNote={Time-of-flight secondary ion mass spectrometry is a widely used surface analytical technique, which can provide chemical information from both the uppermost surface and underneath the surface for various materials.}, number={21}, journal={ANALYTICAL METHODS}, author={Zhou, Chuanzhen and Sun, Dayong and Garcia, Roberto and Stevie, Fred A.}, year={2018}, month={Jun}, pages={2444–2449} }
 @article{smith_zhou_stevie_garcia_2018, title={Imaging and quantitative analysis of insecticide in mosquito net fibers using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)}, volume={13}, ISSN={["1932-6203"]}, DOI={10.1371/journal.pone.0209119}, abstractNote={Time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis was used to qualitatively and quantitatively assess the distribution of permethrin insecticide on the surfaces and interiors of Olyset long-lasting insecticidal net (LLIN) fibers. Total insecticide content in LLINs has been established using many analytical methods. However, it is important to quantify the bioavailable portion residing on the fiber surfaces for incorporated LLINs. ToF-SIMS is a very surface sensitive technique and can directly image the spatial distribution of permethrin insecticide on the surface of Olyset fibers. Surface permethrin appeared as patchy deposits which were easily removed by acetone and reappeared after several days as interior permethrin migrated (bloomed) from the fiber interior. After a wash/incubation cycle, permethrin deposits were more diffuse and less concentrated than those on the as-received fibers. ToF-SIMS is particularly sensitive to detect the Cl- ion, which is the characteristic ion of permethrin. Ion implantation and quantification of dopants using SIMS is well established in the semiconductor industry. In this study, quantitative depth profiling was carried out using 35Cl- ion implantation to correlate secondary ion yield with permethrin concentration, yielding a limit of detection of 0.051 wt% for permethrin. In some cases, surface concentration differed greatly from the fiber interior (>1 μm below the surface). Two- and three-dimensional mapping of Cl at sub-micrometer resolution showed permethrin to be dissolved throughout the fiber, with about 2 vol% residing in disperse, high-concentration domains. This suggests that these fibers fall into the class of monolithic sustained-release devices. It is expected that ToF-SIMS can be a valuable tool to provide insight into the insecticide release behavior of other LLIN products, both current and future.}, number={12}, journal={PLOS ONE}, author={Smith, Stephen C. and Zhou, Chuanzhen and Stevie, Fred A. and Garcia, Roberto}, year={2018}, month={Dec} }
 @article{schmidt_sukumar_hurley_garcia_doremus_interrante_renlund_2016, title={ChemInform Abstract: Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization.}, volume={21}, DOI={10.1002/chin.199044328}, abstractNote={ChemInformVolume 21, Issue 44 Other Subjects ChemInform Abstract: Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization. W. R. SCHMIDT, W. R. SCHMIDT Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorV. SUKUMAR, V. SUKUMAR Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorW. J. JUN. HURLEY, W. J. JUN. HURLEY Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorR. GARCIA, R. GARCIA Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorR. H. DOREMUS, R. H. DOREMUS Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorL. V. INTERRANTE, L. V. INTERRANTE Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorG. M. RENLUND, G. M. RENLUND Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this author W. R. SCHMIDT, W. R. SCHMIDT Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorV. SUKUMAR, V. SUKUMAR Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorW. J. JUN. HURLEY, W. J. JUN. HURLEY Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorR. GARCIA, R. GARCIA Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorR. H. DOREMUS, R. H. DOREMUS Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorL. V. INTERRANTE, L. V. INTERRANTE Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this authorG. M. RENLUND, G. M. RENLUND Dep. Mater. Eng., Rensselaer Polytech. Inst., Troy, NY 12180-3590, USASearch for more papers by this author First published: October 30, 1990 https://doi.org/10.1002/chin.199044328Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume21, Issue44October 30, 1990 RelatedInformation}, number={44}, journal={ChemInform}, publisher={Wiley}, author={SCHMIDT, W. R. and SUKUMAR, V. and HURLEY, W. J. JUN. and GARCIA, R. and DOREMUS, R. H. and INTERRANTE, L. V. and RENLUND, G. M.}, year={2016}, month={May} }
 @article{garcia_liu_stevie_2016, title={Quantification of STEM-EDS With Ion Implantation}, volume={22}, DOI={10.1017/s1431927616001549}, abstractNote={Energy dispersive spectroscopy (EDS) is widely used to provide elemental analysis on SEM and (S)TEM instruments. The detection limit is commonly quoted as approximately 1% atomic and determined from analysis of high purity specimens of the element of interest or estimated by theoretical calculations. Earlier studies [1-3] showed that high dose ion implantation could be used to quantify and obtain a detection limit for STEM-EDS analyses on a cross section specimen from a silicon substrate. The procedure is to obtain a lift-out TEM cross section specimen [4] from a sample that has been ion implanted with sufficient dose to be detected with EDS. Since the sample is very thin the EDS can have high lateral resolution. A line scan starting from the surface will provide a concentration profile of the implanted species. For an implant dose of 1x10 16 atoms/cm 2 , the peak concentration will be approximately 1x10 21 atoms/cm 3 . For a silicon substrate with density 5x10 22 atoms/cm 3 this concentration is 2% atomic which is above the stated detection limit. Accurate concentrations can be established by measurement of dose with Rutherford Backscattering Spectroscopy and depth profile analysis with SIMS. [5,6]}, number={S3}, journal={Microscopy and Microanalysis}, publisher={Oxford University Press (OUP)}, author={Garcia, R. and Liu, Y. and Stevie, F. A.}, year={2016}, month={Jul}, pages={138–139} }
 @article{stevie_garcia_richardson_zhou_2014, title={Back side SIMS analysis}, volume={46}, ISSN={["1096-9918"]}, DOI={10.1002/sia.5470}, abstractNote={Depth profiling SIMS analysis to determine diffusion of an element from a surface layer into a substrate or penetration of a species through a barrier layer can be very difficult to achieve because one cannot readily detect a trace amount of an element after depth profiling through a matrix level of the same element. Removal of the substrate and analysis from the back of the sample has provided a solution to this problem. Substrate removal methods have been either mechanical polish followed by a chemical etch or mechanical polish alone. The latter method has provided successful results for a wide range of studies including penetration of Cu though a barrier material, diffusion from high‐k dielectric layers, and site specific analysis on a product wafer. In order to make the polishing method more routine and reduce the time required, substrate removal was investigated with use of a milling machine designed to de‐process packaged semiconductor devices. Initial work on an Si substrate shows residual Si less than 100 nm could be obtained in a region that was subsequently analyzed with good depth resolution in a SIMS depth profile. Mesa sample preparation with this instrument was also demonstrated. Copyright © 2014 John Wiley & Sons, Ltd.}, journal={SURFACE AND INTERFACE ANALYSIS}, author={Stevie, F. A. and Garcia, R. and Richardson, C. and Zhou, C.}, year={2014}, month={Nov}, pages={241–243} }
 @article{zhou_li_garcia_crawford_beck_hinks_griffis_2012, title={Time-of-Flight-Secondary Ion Mass Spectrometry Method Development for High-Sensitivity Analysis of Acid Dyes in Nylon Fibers}, volume={84}, ISSN={["1520-6882"]}, DOI={10.1021/ac3025569}, abstractNote={A minimally destructive technique for the determination of dyes in finished fibers provides an important tool for crime scene and other forensic investigations. The analytical power and the minimal sample consumption of time-of-flight-secondary ion mass spectrometric (TOF-SIMS) analysis provides the ability to obtain definitive molecular and elemental information relevant to fiber identification, including identification of dyes, from a very small volume of sample. For both fiber surface analysis and, with the aid of cryomicrotomy, fiber cross-section analysis, TOF-SIMS was used to identify various dyes in finished textile fibers. The analysis of C.I. Acid Blue 25 in nylon is presented as a representative example. The molecular ion of C.I. Acid Blue 25 with lower than 3% on weight-of-fiber (owf) dye loading cannot be identified on dyed nylon surfaces by TOF-SIMS using a Bi(3)(+) primary ion beam. Sputtering with C(60)(+) provided the ability to remove surface contamination as well as at least partially remove Bi-induced damage, resulting in a greatly improved signal-to-noise ratio for the Acid Blue 25 molecular ion. The use of C(60)(+) for damage removal in a cyclic manner along with Bi for data acquisition provided the ability to unambiguously identify Acid Blue 25 via its molecular ion at a concentration of 0.1% owf from both fiber surfaces and cross sections.}, number={22}, journal={ANALYTICAL CHEMISTRY}, author={Zhou, Chuanzhen and Li, Min and Garcia, Roberto and Crawford, Anne and Beck, Keith and Hinks, David and Griffis, Dieter P.}, year={2012}, month={Nov}, pages={10085–10090} }
 @article{a.d. garetto_a.d. batchelor_griffis_p.e._russell_2007, title={Transferable Internal Reservoir Device for Electron and Ion Beam Induced Chemistry}, volume={86}, journal={Microscopy and Analysis}, author={A.D. Garetto, R.R. Garcia and A.D. Batchelor, C.L. Progl and Griffis, D.P. and P.E. and Russell}, year={2007}, pages={5–6} }
 @article{gu_stevie_bennett_garcia_griffis_2006, title={Back side SIMS analysis of hafnium silicate}, volume={252}, ISSN={["1873-5584"]}, DOI={10.1016/j.apsusc.2006.02.099}, abstractNote={Abstract High-k dielectrics are under study as part of the effort to continually reduce semiconductor device dimensions and hafnium silicate (HfSixOy) is one of the most promising high-k materials. A requirement of the dielectric is that the constituent elements cannot diffuse into adjacent device regions during thermal processing. Analysis for inter-diffusion using front side SIMS of high-k dielectrics has been complicated by matrix and sputtering effects. Use of a back side analysis sample preparation procedure that was successful for copper diffusion and site specific studies produced a HfSiO specimen that has less than 250 nm silicon remaining and minimal slope over the analysis region. Magnetic Sector (CAMECA IMS-6F) SIMS analysis of this specimen with low energy O2+ bombardment does not show the matrix and sputtering effects noted in the front side data. Sufficient depth resolution was obtained to define the interface between the silicon substrate and the HfSiO layer and indicate what appears to be an interfacial layer. There is no indication of hafnium diffusion into the silicon substrate.}, number={19}, journal={APPLIED SURFACE SCIENCE}, publisher={Elsevier BV}, author={Gu, C. and Stevie, F. A. and Bennett, J. and Garcia, R. and GriffiS, D. P.}, year={2006}, month={Jul}, pages={7179–7181} }
 @article{sivasubramani_lee_kim_kim_gnade_wallace_edge_schlom_stevie_garcia_et al._2006, title={Thermal stability of lanthanum scandate dielectrics on Si(100)}, volume={89}, ISSN={["0003-6951"]}, DOI={10.1063/1.2405418}, abstractNote={The authors have examined the thermal stability of amorphous, molecular beam deposited lanthanum scandate dielectric thin films on top of Si (100) after a 1000°C, 10s rapid thermal anneal. After the anneal, crystallization of LaScO3 is observed. Excellent suppression of lanthanum and scandium diffusion into the substrate silicon is indicated by the back-side secondary ion mass spectrometry (SIMS) analyses. In contrast, front-side SIMS and high-resolution electron energy loss analyses of the amorphous Si∕LaScO3∕Si (100) stack indicated the outdiffusion of lanthanum and scandium into the silicon capping layer during the anneal.}, number={24}, journal={APPLIED PHYSICS LETTERS}, author={Sivasubramani, P. and Lee, T. H. and Kim, M. J. and Kim, J. and Gnade, B. E. and Wallace, R. M. and Edge, L. F. and Schlom, D. G. and Stevie, F. A. and Garcia, R. and et al.}, year={2006}, month={Dec} }
 @article{pourdeyhimi_fedorova_garcia_knowlton_oldham_2005, title={Sample preparation for textile nanofiber composites}, volume={13}, DOI={10.1017/s1551929500051476}, abstractNote={Abstract}, number={2}, journal={Microscopy Today}, author={POURDEYHIMI, BEHNAM and Fedorova, N. and Garcia, R. and Knowlton, V. and Oldham, C.}, year={2005}, pages={38–40} }
 @article{bunker_garcia_russell_2005, title={Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1868886}, abstractNote={Scanning electron microscopy (SEM) cathodoluminescence (CL) experiments were used to determine the existence and direction of piezoelectric fields in a commercial InGaN multiple-quantum-well (MQW) light-emitting diode (LED). The CL emission peak showed a blueshift with increasing reverse bias due to the cancellation of the piezoelectric field. A full compensation of the piezoelectric field was observed followed by a redshift with a further increase of reverse bias, indicating that flat-band conditions had been reached. We determined the piezoelectric field points in the [000-1] direction and estimated the magnitude to be approximately 1MV∕cm. SEM-CL carrier generation density variation and electroluminescence experiments were also used to confirm the existence of a piezoelectric field in the InGaN MQW LED.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Bunker, KL and Garcia, R and Russell, PE}, year={2005}, month={Feb} }
 @article{gu_pivovarov_garcia_stevie_griffis_moran_kulig_richards_2004, title={Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion}, volume={22}, ISSN={["1071-1023"]}, DOI={10.1116/1.1617278}, abstractNote={Secondary ion mass spectrometry (SIMS) backside analyses have been performed on a Cu/TaN/Ta/SiO2/Si structure to determine barrier effectiveness for Cu diffusion. Sample backside access to the barrier layers was obtained by removal of the Si substrate using a polishing method that maintains parallelism between the sample surface and the polished back side by monitoring changes in facets at the four corners of the specimen. Determination of the Si thickness remaining during the polishing process was improved through the use of optical interference measurements using a narrow band pass optical filter. Samples having slopes with respect to the original surface less than 6 nm over 60 μm have been obtained. A difference in polishing rate between SiO2 and Si was exploited to obtain this parallelism. For SIMS analyses, the presence of a SiO2 layer required electron gun charge neutralization for the O2+ 0.5 keV impact energy analysis. SIMS analyses show the ability to distinguish all layers and to monitor copper through the barrier material. With the high depth resolution conditions used, SIMS analyses were able to provide detailed elemental distribution information such as the presence of nitrogen at specific interfaces.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Gu, C and Pivovarov, A and Garcia, R and Stevie, F and Griffis, D and Moran, J and Kulig, L and Richards, JF}, year={2004}, pages={350–354} }
 @article{gu_garcia_pivovarov_stevie_griffis_2004, title={Site-specific SIMS backside analysis}, volume={231}, ISSN={["1873-5584"]}, DOI={10.1016/j.apsusc.2004.03.140}, abstractNote={For maximum SIMS depth resolution for any layer in a sample, the depth profile should begin only as far from the layer as necessary to establish a constant implant concentration of the primary ion beam species. Depth resolution and detection limit can be severely degraded if it is necessary to sputter through an over layer having non uniform sputtering properties or containing a high level of the impurity of interest prior to reaching the layer of interest. A SIMS backside analysis method based on mechanical polishing is extended to allow site-specific SIMS backside depth profile analysis. Optical microscopy employing a red filter was used to allow direct viewing of the site to be depth profiled both during polishing and in situ during SIMS analysis. Depth profile analyses were performed on 100μm×100 μm device test structures. Sample charging resulting from insulator layers present in these device test structures was alleviated using a modified sample mounting technique. Backside SIMS depth profile analysis using an O2+ primary ion beam having an impact energy of 1.25 keV was used to determine if boron had penetrated a thin SiO2 layer.}, journal={APPLIED SURFACE SCIENCE}, publisher={Elsevier BV}, author={Gu, C and Garcia, R and Pivovarov, A and Stevie, F and Griffis, D}, year={2004}, month={Jun}, pages={663–667} }
 @article{garcia_doremus_1992, title={Electron microscopy of the bone-hydroxylapatite interface from a human dental implant}, volume={3}, DOI={10.1007/bf00705285}, number={2}, journal={Journal of Materials Science: Materials in Medicine}, publisher={Springer Science and Business Media LLC}, author={Garcia, R. and Doremus, R. H.}, year={1992}, month={Mar}, pages={154–156} }
 @article{doremus_kao_garcia_1992, title={Optical absorption of small copper particles and the optical properties of copper}, volume={31}, DOI={10.1364/ao.31.005773}, abstractNote={Small copper particles in a silicate glass have an optical absorption band at 0.565 microm. Transmission electron micrographs of the particles show they are ~4.5 nm in diameter. The measured optical absorption agrees closely with that calculated from measurements by Otter and Roberts of the optical properties of copper, in which they are corrected for the small size of the particles. Optical absorption by small metallic particles can help one to choose the most reliable measurements of optical properties of the bulk metal.}, number={27}, journal={Applied Optics}, publisher={The Optical Society}, author={Doremus, Robert and Kao, Shou-Chen and Garcia, Roberto}, year={1992}, month={Sep}, pages={5773} }
 @article{sukumar_schmidt_garcia_doremus_interrante_1990, title={Effect of boron nitride on the coarsening of silicon nitride powder}, volume={9}, DOI={10.1016/0167-577x(90)90136-a}, abstractNote={Abstract The influence of boron nitride on the coarsening of amorphous silicon nitride was studied by heating mixtures of silicon nitride powder with added boron nitride up to 1600°C. The resulting powders were analyzed with BET surface area measurements, X-ray diffraction, and electron microscopy. Boron nitride promoted a surface area reduction from over 200 m 2 /g to about 2 m 2 /g and suppressed crystallinity. Addition of elemental boron had a similar effect.}, number={4}, journal={Materials Letters}, publisher={Elsevier BV}, author={Sukumar, V. and Schmidt, W.R. and Garcia, R. and Doremus, R.H. and Interrante, L.V.}, year={1990}, month={Feb}, pages={117–120} }
 @article{spencer_barnes_martini_garcia_elliott_doremus_1989, title={Incorporation of magnesium into rat dental enamel and its influence on crystallization}, volume={34}, DOI={10.1016/0003-9969(89)90026-5}, abstractNote={The incorporation of magnesium into the enamel of immature rats was studied by chemical analysis and X-ray diffraction. Magnesium solutions were injected subcutaneously and later intra-orally into growing rats. Increased magnesium was detected in the enamel at the late developmental stage, and a delay in enamel mineralization resulted from increased magnesium uptake. Incisai enamel from the Mg-injected rats had significant line-broadening on X-ray diffraction, characteristic of poorly crystallized enamel.}, number={10}, journal={Archives of Oral Biology}, publisher={Elsevier BV}, author={Spencer, P. and Barnes, C. and Martini, J. and Garcia, R. and Elliott, C. and Doremus, R.}, year={1989}, pages={767–771} }