Ronny Kirste

Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023). Anderson transition in compositionally graded p-AlGaN. JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419

Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023). Demonstration of near-ideal Schottky contacts to Si-doped AlN. APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023). High conductivity in Ge-doped AlN achieved by a non-equilibrium process. APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439

Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023). High p-conductivity in AlGaN enabled by polarization field engineering. APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427

Wang, K., Kirste, R., Mita, S., Washiyama, S., Mecouch, W., Reddy, P., … Sitar, Z. (2022). <p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>. APPLIED PHYSICS LETTERS, 120(3). https://doi.org/10.1063/5.0077628

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022). GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. JOURNAL OF APPLIED PHYSICS, 131(1). https://doi.org/10.1063/5.0076044

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022). High electron mobility in AlN:Si by point and extended defect management. JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3. https://doi.org/10.1002/pssr.202100619

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022). Low resistivity, p-type, N-Polar GaN achieved by chemical potential control. APPLIED PHYSICS EXPRESS, 15(8). https://doi.org/10.35848/1882-0786/ac8273

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2022). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3710

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022). Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates. APPLIED PHYSICS LETTERS, 120(20). https://doi.org/10.1063/5.0092937

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures. ADVANCED OPTICAL MATERIALS, Vol. 10. https://doi.org/10.1002/adom.202201535

Szymanski, D., Wang, K., Kaess, F., Kirste, R., Mita, S., Reddy, P., … Collazo, R. (2022). Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3638

Hyun Kim, J., Bagheri, P., Kirste, R., Reddy, P., Collazo, R., & Sitar, Z. (2022, December 9). Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 12. https://doi.org/10.1002/pssa.202200390

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021). A pathway to highly conducting Ge-doped AlGaN. JOURNAL OF APPLIED PHYSICS, 130(20). https://doi.org/10.1063/5.0071791

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021). High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. APPLIED PHYSICS LETTERS, 118(11). https://doi.org/10.1063/5.0042857

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. JOURNAL OF APPLIED PHYSICS, 130(5). https://doi.org/10.1063/5.0059037

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. APPLIED PHYSICS LETTERS, 118(4). https://doi.org/10.1063/5.0035957

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength. JOURNAL OF MATERIALS RESEARCH, Vol. 12. https://doi.org/10.1557/s43578-021-00443-8

Gacevic, Z., Grandal, J., Guo, Q., Kirste, R., Varela, M., Sitar, Z., & Sanchez Garcia, M. A. (2021). Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy. NANOTECHNOLOGY, 32(19). https://doi.org/10.1088/1361-6528/abe2c7

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021). Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN. APPLIED PHYSICS LETTERS, 119(18). https://doi.org/10.1063/5.0062831

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. APPLIED PHYSICS LETTERS, 119(2). https://doi.org/10.1063/5.0055409

Gleco, S., Reddy, P., Kirste, R., Collazo, R., LaJeunesse, D., & Ivanisevic, A. (2020). Modulating the Stress Response of E. coli at GaN Interfaces Using Surface Charge, Surface Chemistry, and Genetic Mutations. ACS APPLIED BIO MATERIALS, 3(10), 7211–7218. https://doi.org/10.1021/acsabm.0c01007

Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., … Zhang, Y. (2020). The 2020 UV emitter roadmap. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50). https://doi.org/10.1088/1361-6463/aba64c

Alden, D., Troha, T., Kirste, R., Mita, S., Guo, Q., Hoffmann, A., … Sitar, Z. (2019). Quasi-phase-matched second harmonic generation of UV light using AlN waveguides. APPLIED PHYSICS LETTERS, 114(10). https://doi.org/10.1063/1.5087058

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2019). Structural characteristics of m-plane AlN substrates and homoepitaxial films. JOURNAL OF CRYSTAL GROWTH, 507, 389–394. https://doi.org/10.1016/j.jcrysgro.2018.07.012

Guo, Q., Kirste, R., Mita, S., Tweedie, J., Reddy, P., Washiyama, S., … Sitar, Z. (2019, June 1). The polarization field in Al-rich AlGaN multiple quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 58. https://doi.org/10.7567/1347-4065/ab07a9

Dycus, J. H., Washiyama, S., Eldred, T. B., Guan, Y., Kirste, R., Mita, S., … LeBeau, J. M. (2019). The role of transient surface morphology on composition control in AlGaN layers and wells. APPLIED PHYSICS LETTERS, 114(3). https://doi.org/10.1063/1.5063933

Washiyama, S., Reddy, P., Kaess, F., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2018). A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 124(11). https://doi.org/10.1063/1.5045058

Snyder, P. J., Reddy, P., Kirste, R., Collazo, R., & Ivanisevic, A. (2018). [Review of Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior]. SMALL METHODS, 2(9). https://doi.org/10.1002/smtd.201800016

Dycus, J. H., Mirrielees, K. J., Grimley, E. D., Kirste, R., Mita, S., Sitar, Z., … LeBeau, J. M. (2018). Structure of Ultrathin Native Oxides on III-Nitride Surfaces. ACS APPLIED MATERIALS & INTERFACES, 10(13), 10607–10611. https://doi.org/10.1021/acsami.8b00845

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018). The influence of point defects on the thermal conductivity of AlN crystals. JOURNAL OF APPLIED PHYSICS, 123(18). https://doi.org/10.1063/1.5028141

Rounds, R., Sarkar, B., Sochacki, T., Bockowski, M., Imanishi, M., Mori, Y., … Sitar, Z. (2018). Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. JOURNAL OF APPLIED PHYSICS, 124(10). https://doi.org/10.1063/1.5047531

Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018). Thermal conductivity of single-crystalline AIN. APPLIED PHYSICS EXPRESS, 11(7). https://doi.org/10.7567/apex.11.071001

Snyder, P. J., Reddy, P., Kirste, R., LaJeunesse, D. R., Collazo, R., & Ivanisevic, A. (2018). Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior. RSC ADVANCES, 8(64), 36722–36730. https://doi.org/10.1039/c8ra06836d

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017). (Invited) Material Considerations for the Development of III-nitride Power Devices. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Kaess, F., Tweedie, J., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. (2017). Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers. APPLIED PHYSICS LETTERS, 111(15). https://doi.org/10.1063/1.5000720

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. (2017). Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment. APPLIED PHYSICS EXPRESS, 10(7). https://doi.org/10.7567/apex.10.071001

Snyder, P. J., Kirste, R., Collazo, R., & Ivanisevic, A. (2017). Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces. SMALL, 13(24). https://doi.org/10.1002/smll.201700481

Huang, L., Li, G., Gurarslan, A., Yu, Y., Kirste, R., Guo, W., … Cao, L. (2016). Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. ACS NANO, 10(8), 7493–7499. https://doi.org/10.1021/acsnano.6b02195

Rohrbaugh, N., Hernandez-Balderrama, L., Kaess, F., Kirste, R., Collazo, R., & Ivanisevic, A. (2016). HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides. AIP ADVANCES, 6(6). https://doi.org/10.1063/1.4953806

Snyder, P. J., Kirste, R., Collazoa, R., & Ivanisevic, A. (2016). Nanoscale topography, semiconductor polarity and surface functionalization: additive and cooperative effects on PC12 cell behavior. RSC ADVANCES, 6(100), 97873–97881. https://doi.org/10.1039/c6ra21936e

Bain, L. E., Kirste, R., Johnson, C. A., Ghashghaei, H. T., Collazo, R., & Ivanisevic, A. (2016). Neurotypic cell attachment and growth on III-nitride lateral polarity structures. MATERIALS SCIENCE & ENGINEERING C-MATERIALS FOR BIOLOGICAL APPLICATIONS, 58, 1194–1198. https://doi.org/10.1016/j.msec.2015.09.084

Berg, N. G., Franke, A., Kirste, R., Collazo, R., & Ivanisevic, A. (2016). Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization. MATERIALS RESEARCH EXPRESS, 3(12). https://doi.org/10.1088/2053-1591/3/12/125906

Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., … Albrecht, M. (2016). Polarity Control in Group-III Nitrides beyond Pragmatism. PHYSICAL REVIEW APPLIED, 5(5). https://doi.org/10.1103/physrevapplied.5.054004

Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., … Sitar, Z. (2016). Strain engineered high reflectivity DBRs in the deep UV. GALLIUM NITRIDE MATERIALS AND DEVICES XI, Vol. 9748. https://doi.org/10.1117/12.2211700

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015). Charge neutrality levels, barrier heights, and band offsets at polar AlGaN. APPLIED PHYSICS LETTERS, 107(9). https://doi.org/10.1063/1.4930026

Kirste, R., Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015). Electronic Biosensors Based on III-Nitride Semiconductors. ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169. https://doi.org/10.1146/annurev-anchem-071114-040247

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015). KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode. APPLIED PHYSICS LETTERS, 106(8). https://doi.org/10.1063/1.4913705

Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., … Zgonik, M. (2015). Optical characterization of Al- and N-polar AlN waveguides for integrated optics. APPLIED PHYSICS EXPRESS, 8(4). https://doi.org/10.7567/apex.8.042603

Majkic, A., Puc, U., Franke, A., Kirste, R., Collazo, R., Sitar, Z., & Zgonik, M. (2015). Optical properties of aluminum nitride single crystals in the THz region. OPTICAL MATERIALS EXPRESS, 5(10), 2106–2111. https://doi.org/10.1364/ome.5.002106

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014). Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films. JOURNAL OF APPLIED PHYSICS, 115(13). https://doi.org/10.1063/1.4870284

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014). Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 116(13). https://doi.org/10.1063/1.4897233

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014). Properties of AlN based lateral polarity structures. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264. https://doi.org/10.1002/pssc.201300287

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014). Sapphire decomposition and inversion domains in N-polar aluminum nitride. APPLIED PHYSICS LETTERS, 104(3). https://doi.org/10.1063/1.4862982

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014). Schottky contact formation on polar and non-polar AlN. JOURNAL OF APPLIED PHYSICS, 116(19). https://doi.org/10.1063/1.4901954

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014). Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. JOURNAL OF APPLIED PHYSICS, 115(10). https://doi.org/10.1063/1.4868678

Bryan, I., Akouala, C.-R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014). Surface preparation of non-polar single-crystalline AlN substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457. https://doi.org/10.1002/pssc.201300401

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014). The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN. APPLIED PHYSICS LETTERS, 104(20). https://doi.org/10.1063/1.4878657

Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., … Sitar, Z. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics, 113(10), 103504. https://doi.org/10.1063/1.4794094

Wagner, M. R., Callsen, G., Reparaz, J. S., Kirste, R., Hoffmann, A., Rodina, A. V., … Phillips, M. R. (2013). Effects of strain on the valence band structure and exciton-polariton energies in ZnO. PHYSICAL REVIEW B, 88(23). https://doi.org/10.1103/physrevb.88.235210

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., … Sitar, Z. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters, 103(24), 242107. https://doi.org/10.1063/1.4848555

Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013). Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures. APPLIED PHYSICS LETTERS, 102(17). https://doi.org/10.1063/1.4803689

Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., … Gerhold, M. (2013). Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(22). https://doi.org/10.1063/1.4800554

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013). Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(6). https://doi.org/10.1063/1.4792694

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013). Vacancy compensation and related donor-acceptor pair recombination in bulk AlN. APPLIED PHYSICS LETTERS, 103(16). https://doi.org/10.1063/1.4824731

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012). On the origin of the 265 nm absorption band in AlN bulk crystals. APPLIED PHYSICS LETTERS, 100(19). https://doi.org/10.1063/1.4717623

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., … Sitar, Z. (2012). Optical signature of Mg-doped GaN: Transfer processes. PHYSICAL REVIEW B, 86(7). https://doi.org/10.1103/physrevb.86.075207

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation. Quantum sensing and nanophotonic devices x, 8631.

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. Journal of Applied Physics, 117(11).

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Point defect management in GaN by Fermi-level control during growth. Gallium nitride materials and devices ix, 8986.