@article{li_mirabedini_vogel_henson_batchelor_wortman_kuehn_1998, title={Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD}, volume={1}, number={3}, journal={Electrochemical and Solid State Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Vogel, E. and Henson, K. and Batchelor, A. D. and Wortman, J. J. and Kuehn, R. T.}, year={1998}, pages={153–155} }
 @article{li_mirabedini_hornung_heinisch_xu_batchelor_maher_wortman_kuehn_1998, title={Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.367404}, abstractNote={Deposition of undoped and in situ boron-doped polycrystalline silicon-germanium (poly-Si1−xGex) films on oxide has been investigated at temperatures below 625 °C and a pressure of 4 Torr in a rapid thermal chemical vapor deposition system. The influences of reactant gases such as Si2H6, SiH4, GeH4, and B2H6 on the nucleation behavior, and structural properties of poly-Si1−xGex films formed on oxide were studied. The experimental results showed that in situ boron-doped or undoped poly-Si1−xGex films can be directly deposited on oxide without an initial Si predeposition layer to provide the necessary nucleation sites on the surface when using Si2H6 as the Si source gas. However, when SiH4 was used as the Si source gas, only in situ boron-doped films can be deposited nonselectively on the oxide without the initial Si predeposition layer, and to deposit undoped poly-Si1−xGex films, Si predeposition is needed, otherwise Si1−xGex islands are formed on the oxide. X-ray diffraction analysis showed that poly-Si1−xGex films deposited using Si2H6, GeH4, and B2H6 gas mixture have three singular peaks corresponding to {311}, {220}, and {111} planes, thus indicating the Si1−xGex alloy is formed. In addition, we found that B2H6 gas has a minor effect on the Ge incorporation into the films but reduces the overall deposition rate.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Li, VZQ and Mirabedini, MR and Hornung, BE and Heinisch, HH and Xu, M and Batchelor, D and Maher, DM and Wortman, JJ and Kuehn, RT}, year={1998}, month={May}, pages={5469–5476} }
 @article{li_mirabedini_kuehn_wortman_ozturk_batchelor_christensen_maher_1997, title={Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications}, volume={71}, DOI={10.1063/1.120344}, abstractNote={In situ boron-doped polycrystalline Si1−xGex (x>0.4) films have been formed on the thermally grown oxides in a rapid thermal chemical vapor deposition processor using SiH4-GeH4-B2H6-H2 gas system. Our results showed that in situ boron-doped Si1−xGex films can be directly deposited on the oxide surface, in contrast to the rapid thermal deposition of undoped silicon-germanium (Si1−xGex) films on oxides which is a partially selective process and requires a thin silicon film pre-deposition to form a continuous film. For the in situ boron-doped Si1−xGex films, we observed that with the increase of the germane percentage in the gas source, the Ge content and the deposition rate of the film are increased, while its resistivity is decreased down to 0.66 mΩ cm for a Ge content of 73%. Capacitance-voltage characteristics of p-type metal-oxide-semiconductor capacitors with p+-Si1−xGex gates showed negligible polydepletion effect for a 75 Å gate oxide, indicating that a high doping level of boron at the poly-Si1−xGex/oxide interface was achieved.}, number={23}, journal={Applied Physics Letters}, author={Li, V. Z. Q. and Mirabedini, M. R. and Kuehn, R. T. and Wortman, J. J. and Ozturk, M. C. and Batchelor, D. and Christensen, K. and Maher, D. M.}, year={1997}, pages={3388–3390} }
 @misc{swartzel_ganesan_kuehn_hamaker_sadeghi_1992, title={Thermal memory cell and thermal system evaluation}, volume={5159564}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Swartzel, K. R. and Ganesan, S. G. and Kuehn, R. T. and Hamaker, R. W. and Sadeghi, F.}, year={1992} }
 @misc{swartzel_ganesan_kuehn_hamaker_sadeghi_1991, title={Thermal memory cell and thermal system evaluation}, volume={5021981}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Swartzel, K. R. and Ganesan, S. G. and Kuehn, R. T. and Hamaker, R. W. and Sadeghi, F.}, year={1991} }