George A. Rozgonyi

Park, Y., Lu, J., Park, J. H., & Rozgonyi, G. (2015). Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing. Electronic Materials Letters, 11(4), 658–663.

Park, Y., Lu, J. G., Park, J. H., & Rozgonyi, G. (2015). The influence of hydrogenation on the electrical properties of impurity-contaminated silicon grain boundaries. Electronic Materials Letters, 11(6), 993–997.

Leonard, S., Markevich, V. P., Peaker, A. R., Hamilton, B., Yousseff, K., & Rozgonyi, G. (2014). Molybdenum nano-precipitates in silicon: A TEM and DLTS study. Physica Status Solidi. B, Basic Solid State Physics, 251(11), 2201–2204.

Bharathan, J., Zhou, H., Narayan, J., Rozgonyi, G., & Bulman, G. E. (2014). Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures. JOURNAL OF ELECTRONIC MATERIALS, 43(9), 3196–3203. https://doi.org/10.1007/s11664-014-3247-6

Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. (2013). Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition. JOURNAL OF ELECTRONIC MATERIALS, 42(10), 2888–2896. https://doi.org/10.1007/s11664-013-2686-9

Youssef, K., Shi, M., Radue, C., Good, E., & Rozgonyi, G. (2013). Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon. Journal of Applied Physics, 113(13).

Shi, M. R., Youssef, K., & Rozgonyi, G. A. (2013). Fracture strength of photovoltaic silicon wafers evaluated using a controlled flaw method. Advanced Engineering Materials, 15(8), 756–760.

Jiang, T. T., Yu, X. G., Gu, X., Rozgonyi, G., & Yang, D. R. (2013). Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates. Physica Status Solidi. A, Applications and Materials Science, 210(9), 1828–1831.

Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. (2013). Poisson Ratio of Epitaxial Germanium Films Grown on Silicon. JOURNAL OF ELECTRONIC MATERIALS, 42(1), 40–46. https://doi.org/10.1007/s11664-012-2337-6

Yoon, Y., Yan, Y. X., Ostrom, N. P., Kim, J., & Rozgonyi, G. (2012). Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon. Applied Physics Letters, 101(22).

Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. (2012). Effect of nickel contamination on high carrier lifetime n-type crystalline silicon. Journal of Applied Physics, 111(3).

Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. (2012). Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012). Journal of Applied Physics, Vol. 111.

Kulshreshtha, P. K., Youssef, K. M., & Rozgonyi, G. (2012). Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon. Solar Energy Materials and Solar Cells, 96(1), 166–172.

Kulshreshtha, P. K., Yoon, Y., Youssef, K. M., Good, E. A., & Rozgonyi, G. (2012). Oxygen precipitation related stress-modified crack propagation in high growth rate Czochralski silicon wafers. Journal of the Electrochemical Society, 159(2), H125–129.

Youssef, K., Yu, X. G., Seacrist, M., & Rozgonyi, G. (2012). Understanding the effect of impurities and grain boundaries on mechanical behavior of Si via nanoindentation of (110)/(100) direct Si bonded wafers. Journal of Materials Research, 27(1), 349–355.

Yu, X., Li, X., Fan, R., Yang, D., Kittler, M., Reiche, M., … Rozgonyi, G. (2010). Effect of Au contamination on the electrical characteristics of a "model" small-angle grain boundary in n-type direct silicon bonded wafer. Journal of Applied Physics, 108(5).

Li, X. Q., Yu, X. G., Song, L. H., Yang, D. R., & Rozgonyi, G. (2010). Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) interface. Scripta Materialia, 63(11), 1100–1103.

Yoon, Y. H., Yi, S. M., Yim, J. R., Lee, J. H., Rozgonyi, G., & Joo, Y. C. (2010). Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films. Microelectronic Engineering, 87(11), 2230–2233.

Yu, X. G., Song, L. H., Yang, D. R., Kittler, M., & Rozgonyi, G. A. (2010). Modulation of 1.5 mu m dislocation-related luminescence emitted from a direct silicon bonded interface by external bias. Applied Physics Letters, 96(21).

Park, Y., Lu, J. G., & Rozgonyi, G. (2010). Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary. Electronic Materials Letters, 6(1), 1–5.

Park, Y., Lu, J., & Rozgonyi, G. (2009). Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers. Journal of Applied Physics, 105(1).

Lu, J. G., Yu, X. G., Park, Y., & Rozgonyi, G. (2009). Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure. Journal of Applied Physics, 105(7).

Yu, X., Lu, J., Youssef, K., & Rozgonyi, G. (2009). Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding. Applied Physics Letters, 94(22).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface. Applied Physics Letters, 92(26).

Lu, J. G., & Rozgonyi, G. (2008). Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries. Applied Physics Letters, 92(8).

Lu, J., Rozgonyi, G. A., & Schonecker, A. (2008). Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS). MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 11(1), 20–24. https://doi.org/10.1016/j.mssp.2008.07.001

Lu, J. G., Park, Y. K., & Rozgonyi, G. A. (2008). Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures. Journal of Applied Physics, 103(7).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary. Semiconductor Science and Technology, 23(12).

Lu, J. G., Rozgonyi, G., Seacrist, M., Chaumont, M., & Campion, A. (2008). Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures. Journal of Applied Physics, 104(7).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary. Journal of Applied Physics, 104(11).

Zhang, R. H., Rozgonyi, G. A., Yakimov, E., Yarykin, N., & Seacrist, M. (2008). Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure. Journal of Applied Physics, 103(10).

Lu, J., & Rozgonyi, G. (2007). Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)/(100) bonded silicon wafer. Applied Physics Letters, 91(17).

Wagener, M. C., Zhang, R. H., Rozgonyi, G. A., Seacrist, M., & Ries, M. (2007). Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces. Applied Physics Letters, 90(11).

Yakimov, E. B., Zhang, R. H., Rozgonyi, G. A., & Seacrist, M. (2007). EBIC characterization of strained Si/SiGe heterostructures. Semiconductors and Semimetals, 41(4), 402–406.

Wagener, M. C., Seacrist, M., & Rozgonyi, G. A. (2007, December 15). Passivation of hybrid-orientation direct silicon bonded interfaces. PHYSICA B-CONDENSED MATTER, Vol. 401, pp. 564–567. https://doi.org/10.1016/j.physb.2007.09.022

Zhao, W., Duscher, G., Rozgonyi, G., Zikry, M. A., Chopra, S., & Ozturk, M. C. (2007). Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures. APPLIED PHYSICS LETTERS, 90(19). https://doi.org/10.1063/1.2738188

Lu, J., & Rozgonyi, G. (2006). Oxygen and carbon precipitation in crystalline sheet silicon - Depth profiling by infrared spectroscopy, and preferential defect etching. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(11), G986–G991. https://doi.org/10.1149/1.2347103

Stoddard, N., Duscher, G., Windl, W., & Rozgonyi, G. (2005). A new understanding of near-threshold damage for 200 keV irradiation in silicon. JOURNAL OF MATERIALS SCIENCE, 40(14), 3639–3650. https://doi.org/10.1007/s10853-005-1059-z

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2005). EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon. Proceedings of the 9th International Autumn Meeting: Gettering and defect engineering in semiconductor technology: GADEST 2001, S. Tecla, Italy, September 30-October 3, 2001 (Solid state phenomena), 108-109, 627–630. Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.;  Enfield, N.H.: Trans Tech Pub. Ltd.

Bray, K. R., Zhao, W., Kordas, L., Wise, R., Robinson, M., & Rozgonyi, G. (2005). Electrical, structural, and chemical analysis of defects in epitaxial SiGe-based heterostructures. Journal of the Electrochemical Society, 152(5), C310–315.

Lu, J. G., Rozgonyi, G., Schonecker, A., Gutjahr, A., & Liu, Z. X. (2005). Impact of oxygen on carbon precipitation in polycrystalline ribbon silicon. Journal of Applied Physics, 97(3).

Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. (2005). Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. JOURNAL OF APPLIED PHYSICS, 97(8). https://doi.org/10.1063/1.1866480

Kvit, A., Karoui, A., Duscher, G., & Rozgonyi, G. A. (2004). "Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers. APPLIED PHYSICS LETTERS, 84(11), 1889–1891. https://doi.org/10.1063/1.1669069

Karoui, F. S., Karoui, A., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2004). Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104. https://doi.org/10.4028/www.scientific.net/ssp.95-96.99

Rozgonyi, G. A., Lu, J., Zhang, R., Rand, J., & Jonczyk, R. (2004). Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211–216.

Zhang, R., Dyk, E. E., Rozgonyi, G. A., Rand, J., & Jonczyk, R. (2004). Investigation of foreign particles in polycrystalline silicon using infrared microscopy. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 82(4), 577–585. https://doi.org/10.1016/j.solmat.2003.11.031

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004). Oxygen precipitate denuded zone in polycrystalline sheet silicon. APPLIED PHYSICS LETTERS, 85(7), 1178–1180. https://doi.org/10.1063/1.1781369

Karoui, A., Karoui, F. S., Rozgonyi, G. A., & Yang, D. (2004). Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects. JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263. https://doi.org/10.1063/1.1773921

Karoui, A., & Rozgonyi, G. A. (2004). Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling. JOURNAL OF APPLIED PHYSICS, 96(6), 3264–3271. https://doi.org/10.1063/1.1773922

Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. (2004). Secondary phase inclusions in polycrystalline sheet silicon. JOURNAL OF CRYSTAL GROWTH, 269(2-4), 599–605. https://doi.org/10.1016/j.jcrysgro.2004.05.022

Lu, J. G., Wagener, M., Rozgonyi, G., Rand, J., & Jonczyk, R. (2003). Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon. JOURNAL OF APPLIED PHYSICS, 94(1), 140–144. https://doi.org/10.1063/1.1578699

Kvit, A., Yankov, R. A., Duscher, G., Rozgonyi, G., & Glasko, J. M. (2003). Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon. APPLIED PHYSICS LETTERS, 83(7), 1367–1369. https://doi.org/10.1063/1.1601678

Stoddard, N., Karoui, A., Duscher, G., Kvit, A., & Rozgonyi, G. (2003). In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon. ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136. https://doi.org/10.1149/1.1614471

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon. MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313. https://doi.org/10.1016/S0167-9317(02)00923-1

Karoui, A., Karoui, F. S., Rozgonyi, G. A., Hourai, M., & Sueoka, K. (2003). Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777. https://doi.org/10.1149/1.1621418

Yoganand, S. N., Raghuveer, M. S., Jagannadham, K., Wu, L., Karoui, A., & Rozgonyi, G. (2002). Multilayer TiC/TiN diffusion barrier films for copper. APPLIED PHYSICS LETTERS, 80(1), 79–81. https://doi.org/10.1063/1.1430027

Karoui, A., Karoui, F. S., Kvit, A., Rozgonyi, G. A., & Yang, D. (2002). Role of nitrogen related complexes in the formation of defects in silicon. APPLIED PHYSICS LETTERS, 80(12), 2114–2116. https://doi.org/10.1063/1.1462874

Karoui, A., Karoui, F. S., Yang, D., & Rozgonyi, G. A. (2002). Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers. Gettering and Defect Engineering in Semiconductor Technology, 82-84(2002), 69–74.

Ono, T., Sasaki, T., Kirk, H., & Rozgonyi, G. A. (2000). Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 78-79(2000), 237–252.

Rozgonyi, G. A., Glasko, J. M., Beaman, K. L., & Koveshnikov, S. V. (2000, March 15). Gettering issues using MeV ion implantation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 72, pp. 87–92. https://doi.org/10.1016/s0921-5107(99)00506-1

Kawamura, T., Kanzawa, T., Kojima, S., & Rozgonyi, G. A. (2000). Reconstructed (12,2,7) Si surface structure observed by scanning tunneling microscopy. JOURNAL OF APPLIED PHYSICS, 87(2), 711–716. https://doi.org/10.1063/1.371930

Ono, T., Rozgonyi, G., Horie, H., Miyazaki, M., & Tsuya, H. (1999). Analysis of capacitor breakdown mechanisms due to crystal-originated pits. IEEE ELECTRON DEVICE LETTERS, 20(10), 504–506. https://doi.org/10.1109/55.791924

Kirk, H. R., Radzimski, Z., Romanowski, A., & Rozgonyi, G. A. (1999). Bias dependent contrast mechanisms in EBIC images of MOS capacitors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535. https://doi.org/10.1149/1.1391799

Koveshnikov, S., Choi, B., Yarykin, N., & Rozgonyi, G. (1999). Drift of interstitial iron in a space charge region of p-type Si Schottky diode. Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

Ono, T., Asayama, E., Horie, H., Hourai, M., Sueoka, K., Tsuya, H., & Rozgonyi, G. A. (1999). Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2239–2244. https://doi.org/10.1149/1.1391921

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999). Evolution of deep-level centers in p-type silicon following ion implantation at 85 K. APPLIED PHYSICS LETTERS, 74(9), 1263–1265. https://doi.org/10.1063/1.123519

Beaman, K. L., Glasko, J. M., Koveshnikov, S. V., & Rozgonyi, G. A. (1999). Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

Yarykin, N., Cho, C. R., Zuhr, R. A., & Rozgonyi, G. A. (1999). In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

Yarykin, N., Cho, C. R., Zuhr, R., & Rozgonyi, G. (1999). In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions. Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

Beaman, K. L., Kononchuk, O., Koveshnikov, S., Osburn, C. M., & Rozgonyi, G. A. (1999). Lateral gettering of Fe on bulk and silicon-on-insulator wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928. https://doi.org/10.1149/1.1391867

Ono, T., Romanowski, A., Asayama, E., Horie, H., Sueoka, K., Tsuya, H., & Rozgonyi, G. A. (1999). Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3461–3465. https://doi.org/10.1149/1.1392496

Ono, T., Rozgonyi, G. A., Asayama, E., Horie, H., Tsuya, H., & Sueoka, K. (1999). Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers. APPLIED PHYSICS LETTERS, 74(24), 3648–3650. https://doi.org/10.1063/1.123210

Ono, T., Rozgonyi, G. A., Au, C., Messina, T., Goodall, R. K., & Huff, H. R. (1999). Oxygen precipitation behavior in 300 mm polished Czochralski silicon wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3807–3811. https://doi.org/10.1149/1.1392555

Brown, R. A., Kononchuk, O., & Rozgonyi, G. A. (1999). Simulation of metallic impurity gettering in silicon by MeV ion implantation. Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Romanowski, A., Rozgonyi, G., & Tamatsuka, M. (1999). Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers. JOURNAL OF APPLIED PHYSICS, 85(9), 6408–6414. https://doi.org/10.1063/1.370144

Sasaki, T., Ono, T., & Rozgonyi, G. A. (1999). Size distribution of oxide precipitates in annealed Czochralski silicon. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2(11), 589–591. https://doi.org/10.1149/1.1390915

Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. (1999). The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K. APPLIED PHYSICS LETTERS, 75(2), 241–243. https://doi.org/10.1063/1.124335

Kononchuk, O., Bondarenko, I., & Rozgonyi, G. (1998). Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Kononchuk, O., Korablev, K. G., Yarykin, N., & Rozgonyi, G. A. (1998). Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures. APPLIED PHYSICS LETTERS, 73(9), 1206–1208. https://doi.org/10.1063/1.122128

Romanowski, A., Buczkowski, A., Karoui, A., & Rozgonyi, G. A. (1998). Frequency-resolved microwave reflection photoconductance. JOURNAL OF APPLIED PHYSICS, 83(12), 7730–7735. https://doi.org/10.1063/1.367946

Brown, R. A., Kononchuk, O., Rozgonyi, G. A., Koveshnikov, S., Knights, A. P., Simpson, P. J., & Gonzalez, F. (1998). Impurity gettering to secondary defects created by MeV ion implantation in silicon. JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465. https://doi.org/10.1063/1.368438

Koveshnikov, S. V., & Rozgonyi, G. A. (1998). Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon. JOURNAL OF APPLIED PHYSICS, 84(6), 3078–3084. https://doi.org/10.1063/1.368462

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239. https://doi.org/10.1143/JJAP.37.1236

Beaman, K. L., Agarwal, A., Kononchuk, O., Koveshnikov, S., Bondarenko, I., & Rozgonyi, G. A. (1997). Gettering of iron in silicon-on-insulator wafers. APPLIED PHYSICS LETTERS, 71(8), 1107–1109. https://doi.org/10.1063/1.119741

Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997). Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881. https://doi.org/10.1149/1.1837910

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, May). The effect of oxygen on secondary defect formation in MeV self-implanted silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 55–58. https://doi.org/10.1016/S0168-583X(96)00848-8