@article{sengupta_vaidya_szymanski_khachariya_bockowski_kamler_reddy_sitar_collazo_pavlidis_2023, title={Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics}, volume={3}, ISSN={["2574-0970"]}, url={https://doi.org/10.1021/acsanm.3c00038}, DOI={10.1021/acsanm.3c00038}, journal={ACS APPLIED NANO MATERIALS}, author={Sengupta, Rohan and Vaidya, Shipra and Szymanski, Dennis and Khachariya, Dolar and Bockowski, Michal and Kamler, Grzegorz and Reddy, Pramod and Sitar, Zlatko and Collazo, Ramon and Pavlidis, Spyridon}, year={2023}, month={Mar} }
 @article{sengupta_dangi_krylyuk_davydov_pavlidis_2022, title={Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing}, volume={121}, ISSN={["1077-3118"]}, DOI={10.1063/5.0097844}, abstractNote={Among group VI transition metal dichalcogenides, MoTe 2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al 2 O 3 -encapsulated 2H-MoTe 2 thin films to 1T′-MoTe 2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe 2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation.}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Sengupta, Rohan and Dangi, Saroj and Krylyuk, Sergiy and Davydov, Albert V. and Pavlidis, Spyridon}, year={2022}, month={Jul} }
 @article{khachariya_mita_reddy_dangi_dycus_bagheri_breckenridge_sengupta_rathkanthiwar_kirste_et al._2022, title={Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates}, volume={120}, ISSN={["1077-3118"]}, DOI={10.1063/5.0083966}, abstractNote={The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ∼11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Khachariya, Dolar and Mita, Seiji and Reddy, Pramod and Dangi, Saroj and Dycus, J. Houston and Bagheri, Pegah and Breckenridge, M. Hayden and Sengupta, Rohan and Rathkanthiwar, Shashwat and Kirste, Ronny and et al.}, year={2022}, month={Apr} }