@article{ramanan_lee_kirkpatrick_suri_misra_2013, title={Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation}, volume={28}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/28/7/074004}, number={7}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Ramanan, Narayanan and Lee, Bongmook and Kirkpatrick, Casey and Suri, Rahul and Misra, Veena}, year={2013}, month={Jul} }
 @article{kirkpatrick_lee_suri_yang_misra_2012, title={Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs}, volume={33}, ISSN={["1558-0563"]}, DOI={10.1109/led.2012.2203782}, number={9}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Kirkpatrick, Casey J. and Lee, Bongmook and Suri, Rahul and Yang, Xiangyu and Misra, Veena}, year={2012}, month={Sep}, pages={1240–1242} }
 @article{suri_kirkpatrick_lichtenwalner_misra_2010, title={Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC}, volume={96}, number={4}, journal={Applied Physics Letters}, author={Suri, R. and Kirkpatrick, C. J. and Lichtenwalner, D. J. and Misra, V.}, year={2010} }
 @article{suri_lichtenwalner_misra_2010, title={Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates}, volume={96}, ISSN={["0003-6951"]}, DOI={10.1063/1.3357422}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Suri, Rahul and Lichtenwalner, Daniel J. and Misra, Veena}, year={2010}, month={Mar} }
 @inproceedings{lee_kirkpatrick_yang_jayanti_suri_roberts_misra_2010, title={Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics}, DOI={10.1109/iedm.2010.5703401}, booktitle={2010 international electron devices meeting - technical digest}, author={Lee, B. and Kirkpatrick, C. and Yang, X. Y. and Jayanti, S. and Suri, R. and Roberts, J. and Misra, Veena}, year={2010} }
 @inproceedings{jayanti_yang_suri_misra_2010, title={Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications}, DOI={10.1109/iedm.2010.5703301}, booktitle={2010 international electron devices meeting - technical digest}, author={Jayanti, S. and Yang, X. Y. and Suri, R. and Misra, Veena}, year={2010} }
 @article{suri_lee_lichtenwalner_biswas_misra_2008, title={Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3007978}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Suri, Rahul and Lee, Bongmook and Lichtenwalner, Daniel J. and Biswas, Nivedita and Misra, Veena}, year={2008}, month={Nov} }
 @article{suri_lichtenwalner_misra_2008, title={Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric}, volume={92}, ISSN={["1077-3118"]}, DOI={10.1063/1.2949079}, number={24}, journal={APPLIED PHYSICS LETTERS}, author={Suri, Rahul and Lichtenwalner, Daniel J. and Misra, Veena}, year={2008}, month={Jun} }