@article{washiyama_guan_mita_collazo_sitar_2020, title={Recovery kinetics in high temperature annealed AlN heteroepitaxial films}, volume={127}, ISBN={1089-7550}, DOI={10.1063/5.0002891}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washiyama, Shun and Guan, Yan and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2020} }
 @article{wang_huynh_liao_yu_bai_tweedie_breckenridge_collazo_sitar_bockowski_et al._2020, title={Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates}, ISBN={1521-3951}, DOI={10.1002/pssb.201900705}, journal={PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}, author={Wang, Yekan and Huynh, Kenny and Liao, Michael E. and Yu, Hsuan-Ming and Bai, Tingyu and Tweedie, James and Breckenridge, Mathew Hayden and Collazo, Ramon and Sitar, Zlatko and Bockowski, Michal and et al.}, year={2020} }
 @article{chichibu_kojima_hazu_ishikawa_furusawa_mita_collazo_sitar_uedono_2019, title={In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film}, volume={115}, ISBN={1077-3118}, DOI={10.1063/1.5116900}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Chichibu, S. F. and Kojima, K. and Hazu, K. and Ishikawa, Y. and Furusawa, K. and Mita, S. and Collazo, R. and Sitar, Z. and Uedono, A.}, year={2019} }
 @article{liu_nitta_robin_kushimoto_deki_honda_pristovsek_sitar_amano_2019, title={Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)}, volume={514}, ISBN={1873-5002}, DOI={10.1016/j.jcrysgro.2019.02.058}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Liu, Zhibin and Nitta, Shugo and Robin, Yoann and Kushimoto, Maki and Deki, Manato and Honda, Yoshio and Pristovsek, Markus and Sitar, Zlatko and Amano, Hiroshi}, year={2019}, pages={13–13} }
 @article{kelley_runnerstrom_sachet_shelton_grimley_klump_lebeau_sitar_suen_padilla_et al._2019, title={Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials}, volume={6}, ISBN={2330-4022}, DOI={10.1021/acsphotonics.9b00367}, number={5}, journal={ACS PHOTONICS}, author={Kelley, Kyle P. and Runnerstrom, Evan L. and Sachet, Edward and Shelton, Christopher T. and Grimley, Everett D. and Klump, Andrew and LeBeau, James M. and Sitar, Zlatko and Suen, Jonathan Y. and Padilla, Willie J. and et al.}, year={2019}, month={May}, pages={1139–1145} }
 @article{harris_gaddy_collazo_sitar_irving_2019, title={Oxygen and silicon point defects in Al0.65Ga0.35N}, volume={3}, ISBN={2475-9953}, DOI={10.1103/PhysRevMaterials.3.054604}, number={5}, journal={PHYSICAL REVIEW MATERIALS}, author={Harris, Joshua S. and Gaddy, Benjamin E. and Collazo, Ramon and Sitar, Zlatko and Irving, Douglas L.}, year={2019} }
 @article{alden_troha_kirste_mita_guo_hoffmann_zgonik_collazo_sitar_2019, title={Quasi-phase-matched second harmonic generation of UV light using AlN waveguides}, volume={114}, ISBN={1077-3118}, DOI={10.1063/1.5087058}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Alden, Dorian and Troha, Tinkara and Kirste, Ronny and Mita, Seiji and Guo, Qiang and Hoffmann, Axel and Zgonik, Marko and Collazo, Ramon and Sitar, Zlatko}, year={2019} }
 @article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, DOI={10.1016/j.jcrysgro.2018.07.012}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, pages={389–394} }
 @article{guo_kirste_mita_tweedie_reddy_washiyama_breckenridge_collazo_sitar_2019, title={The polarization field in Al-rich AlGaN multiple quantum wells}, volume={58}, ISBN={1347-4065}, DOI={10.7567/1347-4065/ab07a9}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Washiyama, Shun and Breckenridge, M. Hayden and Collazo, Ramon and Sitar, Zlatko}, year={2019} }
 @article{dycus_washiyama_eldred_guan_kirste_mita_sitar_collazo_lebeau_2019, title={The role of transient surface morphology on composition control in AlGaN layers and wells}, volume={114}, DOI={10.1063/1.5063933}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Dycus, J. Houston and Washiyama, Shun and Eldred, Tim B. and Guan, Yan and Kirste, Ronny and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon and LeBeau, James M.}, year={2019} }
 @article{washiyama_reddy_kaess_kirste_mita_collazo_sitar_2018, title={A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition}, volume={124}, DOI={10.1063/1.5045058}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washiyama, Shun and Reddy, Pramod and Kaess, Felix and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2018} }
 @article{bryan_bryan_washiyama_reddy_gaddy_sarkar_breckenridge_guo_bobea_tweedie_et al._2018, title={Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD}, volume={112}, DOI={10.1063/1.5011984}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Bryan, Z. and Washiyama, S. and Reddy, P. and Gaddy, B. and Sarkar, B. and Breckenridge, M. H. and Guo, Q. and Bobea, M. and Tweedie, J. and et al.}, year={2018} }
 @article{klump_zhou_stevie_collazo_sitar_2018, title={Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures}, volume={36}, DOI={10.1116/1.5013001}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Klump, A. and Zhou, C. Z. and Stevie, F. A. and Collazo, R. and Sitar, Z.}, year={2018} }
 @article{paisley_brumbach_shelton_allerman_atcitty_rost_ohlhausen_doyle_sitar_maria_et al._2018, title={Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces}, volume={112}, DOI={10.1063/1.5013605}, number={9}, journal={Applied Physics Letters}, author={Paisley, E. A. and Brumbach, M. T. and Shelton, C. T. and Allerman, A. A. and Atcitty, S. and Rost, C. M. and Ohlhausen, J. A. and Doyle, B. L. and Sitar, Z. and Maria, J. P. and et al.}, year={2018} }
 @inproceedings{sarkar_reddy_klump_rounds_breckenridge_haidet_mita_kirste_collazo_sitar_2018, title={On Contacts to III-nitride deep-UV emitters}, DOI={10.1109/icmap.2018.8354575}, booktitle={2018 3rd International Conference on Microwave and Photonics (ICMAP)}, author={Sarkar, B. and Reddy, P. and Klump, A. and Rounds, R. and Breckenridge, M. R. and Haidet, B. B. and Mita, S. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2018} }
 @article{harris_baker_gaddy_bryan_bryan_mirrielees_reddy_collazo_sitar_irving_2018, title={On compensation in Si-doped AlN}, volume={112}, DOI={10.1063/1.5022794}, number={15}, journal={Applied Physics Letters}, author={Harris, J. S. and Baker, J. N. and Gaddy, B. E. and Bryan, I. and Bryan, Z. and Mirrielees, K. J. and Reddy, P. and Collazo, R. and Sitar, Z. and Irving, D. L.}, year={2018} }
 @article{reddy_washiyama_mecouch_hernandez-balderrama_kaess_breckenridge_sarkar_haidet_franke_kohn_et al._2018, title={Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition}, volume={36}, DOI={10.1116/1.5050501}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Reddy, Pramod and Washiyama, Shun and Mecouch, Will and Hernandez-Balderrama, Luis H. and Kaess, Felix and Breckenridge, M. Hayden and Sarkar, Biplab and Haidet, Brian B. and Franke, Alexander and Kohn, Erhard and et al.}, year={2018} }
 @article{alden_harris_bryan_baker_reddy_mita_callsen_hoffmann_irving_collazo_et al._2018, title={Point-defect nature of the ultraviolet absorption band in AIN}, volume={9}, DOI={10.1103/physrevapplied.9.054036}, number={5}, journal={Physical Review Applied}, author={Alden, D. and Harris, J. S. and Bryan, Z. and Baker, J. N. and Reddy, P. and Mita, S. and Callsen, G. and Hoffmann, A. and Irving, D. L. and Collazo, R. and et al.}, year={2018} }
 @article{dhall_vigil-fowler_dycus_kirste_mita_sitar_collazo_lebeau_2018, title={Probing collective oscillation of d-orbital electrons at the nanoscale}, volume={112}, DOI={10.1063/1.5012742}, number={6}, journal={Applied Physics Letters}, author={Dhall, R. and Vigil-Fowler, D. and Dycus, J. H. and Kirste, R. and Mita, S. and Sitar, Z. and Collazo, R. and LeBeau, J. M.}, year={2018} }
 @article{dycus_mirrielees_grimley_kirste_mita_sitar_collazo_irving_lebeau_2018, title={Structure of ultrathin native oxides on III-nitride surfaces}, volume={10}, DOI={10.1021/acsami.8b00845}, number={13}, journal={ACS Applied Materials & Interfaces}, author={Dycus, J. H. and Mirrielees, K. J. and Grimley, E. D. and Kirste, R. and Mita, S. and Sitar, Z. and Collazo, R. and Irving, D. L. and LeBeau, J. M.}, year={2018}, pages={10607–10611} }
 @article{rounds_sarkar_alden_guo_klump_hartmann_nagashima_kirste_franke_bickermann_et al._2018, title={The influence of point defects on the thermal conductivity of AlN crystals}, volume={123}, DOI={10.1063/1.5028141}, number={18}, journal={Journal of Applied Physics}, author={Rounds, R. and Sarkar, B. and Alden, D. and Guo, Q. and Klump, A. and Hartmann, C. and Nagashima, T. and Kirste, R. and Franke, A. and Bickermann, M. and et al.}, year={2018} }
 @article{rounds_sarkar_sochacki_bockowski_imanishi_mori_kirste_collazo_sitar_2018, title={Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes}, volume={124}, DOI={10.1063/1.5047531}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Rounds, Robert and Sarkar, Biplab and Sochacki, Tomasz and Bockowski, Michal and Imanishi, Masayuki and Mori, Yusuke and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko}, year={2018} }
 @article{rounds_sarkar_klump_hartmann_nagashima_kirste_franke_bickermann_kumagai_sitar_et al._2018, title={Thermal conductivity of single-crystalline AIN}, volume={11}, DOI={10.7567/apex.11.071001}, number={7}, journal={Applied Physics Express}, author={Rounds, R. and Sarkar, B. and Klump, A. and Hartmann, C. and Nagashima, T. and Kirste, R. and Franke, A. and Bickermann, M. and Kumagai, Y. and Sitar, Z. and et al.}, year={2018} }
 @article{reddy_kaess_tweedie_kirste_mita_collazo_sitar_2017, title={Defect quasi Fermi level control-based C-N reduction in GaN: Evidence for the role of minority carriers}, volume={111}, DOI={10.1063/1.5000720}, number={15}, journal={Applied Physics Letters}, author={Reddy, P. and Kaess, F. and Tweedie, J. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{reddy_sarkar_kaess_gerhold_kohn_collazo_sitar_2017, title={Defect-free Ni/GaN Schottky barrier behavior with high temperature stability}, volume={110}, DOI={10.1063/1.4973762}, number={1}, journal={Applied Physics Letters}, author={Reddy, P. and Sarkar, B. and Kaess, F. and Gerhold, M. and Kohn, E. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{sarkar_mita_reddy_klump_kaess_tweedie_bryan_bryan_kirste_kohn_et al._2017, title={High free carrier concentration in p-GaN grown on AlN substrates}, volume={111}, DOI={10.1063/1.4995239}, number={3}, journal={Applied Physics Letters}, author={Sarkar, B. and Mita, S. and Reddy, P. and Klump, A. and Kaess, F. and Tweedie, J. and Bryan, I. and Bryan, Z. and Kirste, R. and Kohn, E. and et al.}, year={2017} }
 @inproceedings{sarkar_reddy_kaess_haidet_tweedie_mita_kirste_kohn_collazo_sitar_2017, title={Material considerations for the development of III-nitride power devices}, volume={80}, DOI={10.1149/08007.0029ecst}, number={7}, booktitle={Gallium nitride and silicon carbide power technologies 7}, author={Sarkar, B. and Reddy, P. and Kaess, F. and Haidet, B. B. and Tweedie, J. and Mita, S. and Kirste, R. and Kohn, E. and Collazo, R. and Sitar, Z.}, year={2017}, pages={29–36} }
 @article{lamprecht_jmerik_collazo_sitar_ivanov_thonke_2017, title={Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN}, volume={254}, DOI={10.1002/pssb.201600714}, number={8}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Lamprecht, M. and Jmerik, V. N. and Collazo, R. and Sitar, Z. and Ivanov, S. V. and Thonke, K.}, year={2017} }
 @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, DOI={10.7567/jjap.56.100302}, number={10}, journal={Japanese Journal of Applied Physics}, author={Haidet, B. B. and Sarkar, B. and Reddy, P. and Bryan, I. and Bryan, Z. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{majkic_franke_kirste_schlesser_collazo_sitar_zgonik_2017, title={Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals}, volume={254}, DOI={10.1002/pssb.201700077}, number={9}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Majkic, A. and Franke, A. and Kirste, R. and Schlesser, R. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2017} }
 @article{thonke_lamprecht_collazo_sitar_2017, title={Optical signatures of silicon and oxygen related DX centers in AlN}, volume={214}, DOI={10.1002/pssa.201600749}, number={9}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Thonke, K. and Lamprecht, M. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{sarkar_haidet_reddy_kirste_collazo_sitar_2017, title={Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment}, volume={10}, DOI={10.7567/apex.10.071001}, number={7}, journal={Applied Physics Express}, author={Sarkar, B. and Haidet, B. B. and Reddy, P. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{reddy_washiyama_kaess_kirste_mita_collazo_sitar_2017, title={Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN}, volume={122}, DOI={10.1063/1.5002682}, number={24}, journal={Journal of Applied Physics}, author={Reddy, P. and Washiyama, S. and Kaess, F. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2017} }
 @article{lamprecht_grund_bauer_collazo_sitar_thonke_2017, title={Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states}, volume={254}, DOI={10.1002/pssb.201600338}, number={5}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Lamprecht, M. and Grund, C. and Bauer, S. and Collazo, R. and Sitar, Z. and Thonke, K.}, year={2017} }
 @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, DOI={10.1063/1.4993840}, number={9}, journal={APL Materials}, author={Shelton, C. T. and Bryan, I. and Paisley, E. A. and Sachet, E. and Ihlefeld, J. F. and Lavrik, N. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2017} }
 @article{dycus_mirrielees_grimley_dhall_kirste_mita_sitar_collazo_irving_lebeau_2017, title={Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS}, volume={23}, ISSN={1431-9276 1435-8115}, url={http://dx.doi.org/10.1017/S1431927617007887}, DOI={10.1017/S1431927617007887}, number={S1}, journal={Microscopy and Microanalysis}, publisher={Cambridge University Press (CUP)}, author={Dycus, J. Houston and Mirrielees, Kelsey J. and Grimley, Everett D. and Dhall, Rohan and Kirste, Ronny and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon and Irving, Douglas L. and LeBeau, James M.}, year={2017}, month={Jul}, pages={1444–1445} }
 @article{huang_li_gurarslan_yu_kirste_guo_zhao_collazo_sitar_parsons_et al._2016, title={Atomically thin MoS2 narrowband and broadband light superabsorbers}, volume={10}, DOI={10.1021/acsnano.6b02195}, number={8}, journal={ACS Nano}, author={Huang, L. J. and Li, G. Q. and Gurarslan, A. and Yu, Y. L. and Kirste, R. and Guo, W. and Zhao, J. J. and Collazo, R. and Sitar, Z. and Parsons, G. N. and et al.}, year={2016}, pages={7493–7499} }
 @article{kaess_mita_xie_reddy_klump_hernandez-balderrama_washiyama_franke_kirste_hoffmann_et al._2016, title={Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition}, volume={120}, DOI={10.1063/1.4962017}, number={10}, journal={Journal of Applied Physics}, author={Kaess, F. and Mita, S. and Xie, J. Q. and Reddy, P. and Klump, A. and Hernandez-Balderrama, L. H. and Washiyama, S. and Franke, A. and Kirste, R. and Hoffmann, A. and et al.}, year={2016} }
 @article{alden_guo_kirste_kaess_bryan_troha_bagal_reddy_hernandez-balderrama_franke_et al._2016, title={Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications}, volume={108}, DOI={10.1063/1.4955033}, number={26}, journal={Applied Physics Letters}, author={Alden, D. and Guo, W. and Kirste, R. and Kaess, F. and Bryan, I. and Troha, T. and Bagal, A. and Reddy, P. and Hernandez-Balderrama, L. H. and Franke, A. and et al.}, year={2016} }
 @article{franke_hoffmann_kirste_bobea_tweedie_kaess_gerhold_collazo_sitar_2016, title={High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers}, volume={120}, DOI={10.1063/1.4963831}, number={13}, journal={Journal of Applied Physics}, author={Franke, A. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Tweedie, J. and Kaess, F. and Gerhold, M. and Collazo, R. and Sitar, Z.}, year={2016} }
 @article{reddy_washiyama_kaess_breckenridge_hernandez-balderrama_haidet_alden_franke_sarkar_kohn_et al._2016, title={High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies}, volume={119}, DOI={10.1063/1.4945775}, number={14}, journal={Journal of Applied Physics}, author={Reddy, P. and Washiyama, S. and Kaess, F. and Breckenridge, M. H. and Hernandez-Balderrama, L. H. and Haidet, B. B. and Alden, D. and Franke, A. and Sarkar, B. and Kohn, E. and et al.}, year={2016} }
 @article{tojo_yamamoto_tanaka_thieu_togashi_nagashima_kinoshita_dalmau_schlesser_murakami_et al._2016, title={Influence of high-temperature processing on the surface properties of bulk AlN substrates}, volume={446}, DOI={10.1016/j.jcrysgro.2016.04.030}, journal={Journal of Crystal Growth}, author={Tojo, S. and Yamamoto, R. and Tanaka, R. and Thieu, Q. T. and Togashi, R. and Nagashima, T. and Kinoshita, T. and Dalmau, R. and Schlesser, R. and Murakami, H. and et al.}, year={2016}, pages={33–38} }
 @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, DOI={10.1063/1.4967397}, number={18}, journal={Journal of Applied Physics}, author={Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and et al.}, year={2016} }
 @article{mohn_stolyarchuk_markurt_kirste_hoffmann_collazo_courville_di felice_sitar_vennegues_et al._2016, title={Polarity control in group-III nitrides beyond pragmatism}, volume={5}, DOI={10.1103/physrevapplied.5.054004}, number={5}, journal={Physical Review Applied}, author={Mohn, S. and Stolyarchuk, N. and Markurt, T. and Kirste, R. and Hoffmann, M. P. and Collazo, R. and Courville, A. and Di Felice, R. and Sitar, Z. and Vennegues, P. and et al.}, year={2016} }
 @article{losego_paisley_craft_lam_sachet_mita_collazo_sitar_maria_2016, title={Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces}, volume={31}, DOI={10.1557/jmr.2015.332}, number={1}, journal={Journal of Materials Research}, author={Losego, M. D. and Paisley, E. A. and Craft, H. S. and Lam, P. G. and Sachet, E. and Mita, S. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2016}, pages={36–45} }
 @inproceedings{franke_hoffmann_hernandez-balderrama_kaess_bryan_washiyama_bobea_tweedie_kirste_gerhold_et al._2016, title={Strain engineered high reflectivity DBRs in the deep UV}, volume={9748}, DOI={10.1117/12.2211700}, booktitle={Gallium nitride materials and devices xi}, author={Franke, A. and Hoffmann, P. and Hernandez-Balderrama, L. and Kaess, F. and Bryan, I. and Washiyama, S. and Bobea, M. and Tweedie, J. and Kirste, R. and Gerhold, M. and et al.}, year={2016} }
 @article{bryan_bryan_mita_rice_tweedie_collazo_sitar_2016, title={Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides}, volume={438}, DOI={10.1016/j.jcrysgro.2015.12.022}, journal={Journal of Crystal Growth}, author={Bryan, I. and Bryan, Z. and Mita, S. and Rice, A. and Tweedie, J. and Collazo, R. and Sitar, Z.}, year={2016}, pages={81–89} }
 @article{kaess_reddy_alden_klump_hernandez-balderrama_franke_kirste_hoffmann_collazo_sitar_2016, title={The Effect of illumination power density on carbon defect configuration in silicon doped gan}, volume={120}, DOI={10.1063/1.4972468}, number={23}, journal={Journal of Applied Physics}, author={Kaess, F. and Reddy, P. and Alden, D. and Klump, A. and Hernandez-Balderrama, L. H. and Franke, A. and Kirste, R. and Hoffmann, A. and Collazo, R. and Sitar, Z.}, year={2016} }
 @article{bryan_bryan_mita_rice_hussey_shelton_tweedie_maria_collazo_sitar_2016, title={The role of surface kinetics on composition and quality of AlGaN}, volume={451}, DOI={10.1016/j.jcrysgro.2016.06.055}, journal={Journal of Crystal Growth}, author={Bryan, I. and Bryan, Z. and Mita, S. and Rice, A. and Hussey, L. and Shelton, C. and Tweedie, J. and Maria, J. P. and Collazo, R. and Sitar, Z.}, year={2016}, pages={65–71} }
 @article{troha_rigler_alden_bryan_guo_kirste_mita_gerhold_collazo_sitar_et al._2016, title={UV second harmonic generation in AlN waveguides with modal phase matching}, volume={6}, DOI={10.1364/ome.6.002014}, number={6}, journal={Optical Materials Express}, author={Troha, T. and Rigler, M. and Alden, D. and Bryan, I. and Guo, W. and Kirste, R. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and et al.}, year={2016}, pages={2014–2023} }
 @article{lamprecht_grund_neuschl_thonke_bryan_collazo_sitar_2016, title={Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state}, volume={119}, DOI={10.1063/1.4946828}, number={15}, journal={Journal of Applied Physics}, author={Lamprecht, M. and Grund, C. and Neuschl, B. and Thonke, K. and Bryan, Z. and Collazo, R. and Sitar, Z.}, year={2016} }
 @article{haidet_bryan_reddy_bryan_collazo_sitar_2015, title={A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN}, volume={117}, DOI={10.1063/1.4923062}, number={24}, journal={Journal of Applied Physics}, author={Haidet, B. B. and Bryan, I. and Reddy, P. and Bryan, Z. and Collazo, R. and Sitar, Z.}, year={2015} }
 @misc{jones_chow_wraback_shatalov_sitar_shahedipour_udwary_tompa_2015, title={AlGaN devices and growth of device structures}, volume={50}, DOI={10.1007/s10853-015-8878-3}, number={9}, journal={Journal of Materials Science}, author={Jones, K. A. and Chow, T. P. and Wraback, M. and Shatalov, M. and Sitar, Z. and Shahedipour, F. and Udwary, K. and Tompa, G. S.}, year={2015}, pages={3267–3307} }
 @article{reddy_bryan_bryan_tweedie_washiyama_kirste_mita_collazo_sitar_2015, title={Charge neutrality levels, barrier heights, and band offsets at polar AlGaN}, volume={107}, DOI={10.1063/1.4930026}, number={9}, journal={Applied Physics Letters}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Tweedie, J. and Washiyama, S. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2015} }
 @article{kinoshita_nagashima_obata_takashima_yamamoto_togashi_kumagai_schlesser_collazo_koukitu_et al._2015, title={Fabrication of vertical Schottky barrier diodes on n-type freestanding AIN substrates grown by hydride vapor phase epitaxy}, volume={8}, DOI={10.7567/apex.8.061003}, number={6}, journal={Applied Physics Express}, author={Kinoshita, T. and Nagashima, T. and Obata, T. and Takashima, S. and Yamamoto, R. and Togashi, R. and Kumagai, Y. and Schlesser, R. and Collazo, R. and Koukitu, A. and et al.}, year={2015} }
 @article{hoffmann_kirste_mita_guo_tweedie_bobea_bryan_bryan_gerhold_collazo_et al._2015, title={Growth and characterization of AlxGa1-xN lateral polarity structures}, volume={212}, DOI={10.1002/pssa.201431740}, number={5}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Hoffmann, M. P. and Kirste, R. and Mita, S. and Guo, W. and Tweedie, J. and Bobea, M. and Bryan, I. and Bryan, Z. and Gerhold, M. and Collazo, R. and et al.}, year={2015}, pages={1039–1042} }
 @article{bryan_bryan_xie_mita_sitar_collazo_2015, title={High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates}, volume={106}, DOI={10.1063/1.4917540}, number={14}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Xie, J. Q. and Mita, S. and Sitar, Z. and Collazo, R.}, year={2015} }
 @article{guo_kirste_bryan_bryan_hussey_reddy_tweedie_collazo_sitar_2015, title={KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode}, volume={106}, DOI={10.1063/1.4913705}, number={8}, journal={Applied Physics Letters}, author={Guo, W. and Kirste, R. and Bryan, I. and Bryan, Z. and Hussey, L. and Reddy, P. and Tweedie, J. and Collazo, R. and Sitar, Z.}, year={2015} }
 @article{rigler_buh_hoffmann_kirste_bobea_mita_gerhold_collazo_sitar_zgonik_2015, title={Optical characterization of Al- and N-polar AlN waveguides for integrated optics}, volume={8}, DOI={10.7567/apex.8.042603}, number={4}, journal={Applied Physics Express}, author={Rigler, M. and Buh, J. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2015} }
 @article{majkic_puc_franke_kirste_collazo_sitar_zgonik_2015, title={Optical properties of aluminum nitride single crystals in the THz region}, volume={5}, DOI={10.1364/ome.5.002106}, number={10}, journal={Optical Materials Express}, author={Majkic, A. and Puc, U. and Franke, A. and Kirste, R. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2015}, pages={2106–2111} }
 @article{bryan_bryan_mita_tweedie_sitar_collazo_2015, title={Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates}, volume={106}, DOI={10.1063/1.4922385}, number={23}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Mita, S. and Tweedie, J. and Sitar, Z. and Collazo, R.}, year={2015} }
 @article{zhou_raghothamachar_wu_dalmau_moody_craft_schlesser_dudley_sitar_2014, title={Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation}, volume={43}, DOI={10.1007/s11664-013-2968-2}, number={4}, journal={Journal of Electronic Materials}, author={Zhou, T. Y. and Raghothamachar, B. and Wu, F. Z. and Dalmau, R. and Moody, B. and Craft, S. and Schlesser, R. and Dudley, M. and Sitar, Z.}, year={2014}, pages={838–842} }
 @article{goni_kaess_reparaz_alonso_garriga_callsen_wagner_hoffmann_sitar_2014, title={Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN}, volume={90}, DOI={10.1103/physrevb.90.045208}, number={4}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Goni, A. R. and Kaess, F. and Reparaz, J. S. and Alonso, M. I. and Garriga, M. and Callsen, G. and Wagner, M. R. and Hoffmann, A. and Sitar, Z.}, year={2014} }
 @article{hussey_bryan_kirste_guo_bryan_mita_collazo_sitar_2014, title={Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy}, volume={20}, ISSN={1431-9276 1435-8115}, url={http://dx.doi.org/10.1017/S1431927614002530}, DOI={10.1017/S1431927614002530}, number={S3}, journal={Microscopy and Microanalysis}, publisher={Cambridge University Press (CUP)}, author={Hussey, Lindsay and Bryan, Isaac and Kirste, Ronny and Guo, Wei and Bryan, Zachary and Mita, Seiji and Collazo, Ramón and Sitar, Zlatko}, year={2014}, month={Aug}, pages={162–163} }
 @article{bryan_bryan_bobea_hussey_kirste_sitar_collazo_2014, title={Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films}, volume={115}, DOI={10.1063/1.4870284}, number={13}, journal={Journal of Applied Physics}, author={Bryan, Z. and Bryan, I. and Bobea, M. and Hussey, L. and Kirste, R. and Sitar, Z. and Collazo, R.}, year={2014} }
 @article{bryan_bryan_gaddy_reddy_hussey_bobea_guo_hoffmann_kirste_tweedie_et al._2014, title={Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN}, volume={105}, DOI={10.1063/1.4903058}, number={22}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Gaddy, B. E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} }
 @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, DOI={10.1016/j.jcrysgro.2014.02.020}, journal={Journal of Crystal Growth}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Bobea, M. and Fijalkowski, M. and Bryan, I. and Lucznik, B. and Collazo, R. and Weyher, J. L. and Kucharski, R. and et al.}, year={2014}, pages={55–60} }
 @article{bryan_bryan_bobea_hussey_kirste_collazo_sitar_2014, title={Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition}, volume={116}, DOI={10.1063/1.4897233}, number={13}, journal={Journal of Applied Physics}, author={Bryan, I. and Bryan, Z. and Bobea, M. and Hussey, L. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} }
 @article{callsen_wagner_reparaz_nippert_kure_kalinowski_hoffmann_ford_phillips_dalmau_et al._2014, title={Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements}, volume={90}, DOI={10.1103/physrevb.90.205206}, number={20}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Callsen, G. and Wagner, M. R. and Reparaz, J. S. and Nippert, F. and Kure, T. and Kalinowski, S. and Hoffmann, A. and Ford, M. J. and Phillips, M. R. and Dalmau, R. F. and et al.}, year={2014} }
 @article{shelton_sachet_paisley_hoffmann_rajan_collazo_sitar_maria_2014, title={Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures}, volume={115}, DOI={10.1063/1.4863120}, number={4}, journal={Journal of Applied Physics}, author={Shelton, C. T. and Sachet, E. and Paisley, E. A. and Hoffmann, M. P. and Rajan, J. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2014} }
 @inproceedings{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, DOI={10.1002/pssc.201300287}, number={2}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 2}, author={Kirste, R. and Mita, S. and Hoffmann, M. P. and Hussey, L. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Gerhold, M. and Hoffmann, A. and et al.}, year={2014}, pages={261–264} }
 @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, DOI={10.1063/1.4862982}, number={3}, journal={Applied Physics Letters}, author={Hussey, L. and White, R. M. and Kirste, R. and Mita, S. and Bryan, I. and Guo, W. and Osterman, K. and Haidet, B. and Bryan, Z. and Bobea, M. and et al.}, year={2014} }
 @article{reddy_bryan_bryan_tweedie_kirste_collazo_sitar_2014, title={Schottky contact formation on polar and non-polar AlN}, volume={116}, DOI={10.1063/1.4901954}, number={19}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Tweedie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} }
 @article{paisley_gaddy_lebeau_shelton_biegalski_christen_losego_mita_collazo_sitar_et al._2014, title={Smooth cubic commensurate oxides on gallium nitride}, volume={115}, DOI={10.1063/1.4861172}, number={6}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Gaddy, B. E. and LeBeau, J. M. and Shelton, C. T. and Biegalski, M. D. and Christen, H. M. and Losego, M. D. and Mita, S. and Collazo, R. and Sitar, Z. and et al.}, year={2014} }
 @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, DOI={10.1063/1.4868678}, number={10}, journal={Journal of Applied Physics}, author={Guo, W. and Bryan, Z. and Xie, J. Q. and Kirste, R. and Mita, S. and Bryan, I. and Hussey, L. and Bobea, M. and Haidet, B. and Gerhold, M. and et al.}, year={2014} }
 @inproceedings{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, DOI={10.1002/pssc.201300401}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 3-4}, author={Bryan, I. and Akouala, C. R. and Tweedie, J. and Bryan, Z. and Rice, A. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014}, pages={454–457} }
 @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, DOI={10.1063/1.4896377}, number={12}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Guo, W. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2014} }
 @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, DOI={10.1063/1.4878657}, number={20}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and Kinoshita, T. and et al.}, year={2014} }
 @article{kuittinen_tuomisto_kumagai_nagashima_kinoshita_koukitu_collazo_sitar_2014, title={Vacancy defects in UV-transparent HVPE-AlN}, volume={11}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/PSSC.201300529}, DOI={10.1002/PSSC.201300529}, number={3-4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kuittinen, Tanja and Tuomisto, Filip and Kumagai, Yoshinao and Nagashima, Toru and Kinoshita, Toru and Koukitu, Akinori and Collazo, Ramón and Sitar, Zlatko}, year={2014}, month={Feb}, pages={405–407} }
 @article{foster_collazo_sitar_ivanisevic_2013, title={Aqueous stability of Ga- and N-polar gallium nitride}, volume={29}, DOI={10.1021/la304039n}, number={1}, journal={Langmuir}, author={Foster, C. M. and Collazo, R. and Sitar, Z. and Ivanisevic, A.}, year={2013}, pages={216–220} }
 @article{foster_collazo_sitar_ivanisevic_2013, title={Cell behavior on gallium nitride surfaces: Peptide affinity attachment versus covalent functionalization}, volume={29}, DOI={10.1021/la401503b}, number={26}, journal={Langmuir}, author={Foster, C. M. and Collazo, R. and Sitar, Z. and Ivanisevic, A.}, year={2013}, pages={8377–8384} }
 @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, DOI={10.1016/j.jcrysgro.2012.12.141}, journal={Journal of Crystal Growth}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, pages={20–25} }
 @article{kirste_hoffmann_tweedie_bryan_callsen_kure_nenstiel_wagner_collazo_hoffmann_et al._2013, title={Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements}, volume={113}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.4794094}, DOI={10.1063/1.4794094}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kirste, Ronny and Hoffmann, Marc P. and Tweedie, James and Bryan, Zachary and Callsen, Gordon and Kure, Thomas and Nenstiel, Christian and Wagner, Markus R. and Collazo, Ramón and Hoffmann, Axel and et al.}, year={2013}, month={Mar}, pages={103504} }
 @article{neuschl_thonke_feneberg_goldhahn_wunderer_yang_johnson_xie_mita_rice_et al._2013, title={Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions}, volume={103}, DOI={10.1063/1.4821183}, number={12}, journal={Applied Physics Letters}, author={Neuschl, B. and Thonke, K. and Feneberg, M. and Goldhahn, R. and Wunderer, T. and Yang, Z. and Johnson, N. M. and Xie, J. and Mita, S. and Rice, A. and et al.}, year={2013} }
 @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial PbxZr1-xTiO3 on GaN}, volume={113}, DOI={10.1063/1.4792599}, number={7}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2013} }
 @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)}, volume={114}, number={23}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2013} }
 @article{chichibu_hazu_ishikawa_tashiro_ohtomo_furusawa_uedono_mita_xie_collazo_et al._2013, title={Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements}, volume={103}, DOI={10.1063/1.4823826}, number={14}, journal={Applied Physics Letters}, author={Chichibu, S. F. and Hazu, K. and Ishikawa, Y. and Tashiro, M. and Ohtomo, T. and Furusawa, K. and Uedono, A. and Mita, S. and Xie, J. and Collazo, R. and et al.}, year={2013} }
 @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi level control of point defects during growth of Mg-doped GaN}, volume={42}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={Journal of Electronic Materials}, author={Bryan, Z. and Hoffmann, M. and Tweedie, J. and Kirste, R. and Callsen, G. and Bryan, I. and Rice, A. and Bobea, M. and Mita, S. and Xie, J. Q. and et al.}, year={2013}, pages={815–819} }
 @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, DOI={10.1063/1.4848555}, number={24}, journal={Applied Physics Letters}, author={Kirste, R. and Hoffmann, M. P. and Sachet, E. and Bobea, M. and Bryan, Z. and Bryan, I. and Nenstiel, C. and Hoffmann, A. and Maria, J. P. and Collazo, R. and et al.}, year={2013} }
 @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4812987}, DOI={10.1063/1.4812987}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, Matthew S. and Bryan, Isaac and Sitar, Zlatko and Arellano, Consuelo and Xie, Jinqiao and Collazo, Ramon and Ivanisevic, Albena}, year={2013}, month={Jul}, pages={013701} }
 @article{xie_mita_bryan_guo_hussey_moody_schlesser_kirste_gerhold_collazo_et al._2013, title={Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures}, volume={102}, DOI={10.1063/1.4803689}, number={17}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Bryan, Z. and Guo, W. and Hussey, L. and Moody, B. and Schlesser, R. and Kirste, R. and Gerhold, M. and Collazo, R. and et al.}, year={2013} }
 @article{kinoshita_obata_nagashima_yanagi_moody_mita_inoue_kumagai_koukitu_sitar_2013, title={Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy}, volume={6}, DOI={10.7567/apex.6.092103}, number={9}, journal={Applied Physics Express}, author={Kinoshita, T. and Obata, T. and Nagashima, T. and Yanagi, H. and Moody, B. and Mita, S. and Inoue, S. and Kumagai, Y. and Koukitu, A. and Sitar, Z.}, year={2013} }
 @article{makowski_kim_gaillard_janes_manfra_bryan_sitar_arellano_xie_collazo_et al._2013, title={Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications}, volume={102}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4791788}, DOI={10.1063/1.4791788}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, M. S. and Kim, S. and Gaillard, M. and Janes, D. and Manfra, M. J. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. and Collazo, R. and et al.}, year={2013}, month={Feb}, pages={074102} }
 @article{kirste_mita_hussey_hoffmann_guo_bryan_bryan_tweedie_xie_gerhold_et al._2013, title={Polarity control and growth of lateral polarity structures in AlN}, volume={102}, DOI={10.1063/1.4804575}, number={18}, journal={Applied Physics Letters}, author={Kirste, R. and Mita, S. and Hussey, L. and Hoffmann, M. P. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Xie, J. Q. and Gerhold, M. and et al.}, year={2013} }
 @article{sochacki_bryan_amilusik_collazo_lucznik_weyher_nowak_sadovyi_kamler_kucharski_et al._2013, title={Preparation of free-standing GaN substrates from thick GaN layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds}, volume={6}, DOI={10.7567/apex.6.075504}, number={7}, journal={Applied Physics Express}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Collazo, R. and Lucznik, B. and Weyher, J. L. and Nowak, G. and Sadovyi, B. and Kamler, G. and Kucharski, R. and et al.}, year={2013} }
 @article{rigler_zgonik_hoffmann_kirste_bobea_collazo_sitar_mita_gerhold_2013, title={Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4800554}, number={22}, journal={Applied Physics Letters}, author={Rigler, M. and Zgonik, M. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Collazo, R. and Sitar, Z. and Mita, S. and Gerhold, M.}, year={2013} }
 @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4792694}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{freedman_leach_preble_sitar_davis_malen_2013, title={Universal phonon mean free path spectra in crystalline semiconductors at high temperature}, volume={3}, DOI={10.1038/srep02963}, journal={Scientific Reports}, author={Freedman, J. P. and Leach, J. H. and Preble, E. A. and Sitar, Z. and Davis, R. F. and Malen, J. A.}, year={2013} }
 @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, DOI={10.1063/1.4824731}, number={16}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Kirste, R. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and et al.}, year={2013} }
 @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, DOI={10.1063/1.4798352}, number={12}, journal={Journal of Applied Physics}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013} }
 @article{kinoshita_hironaka_obata_nagashima_dalmau_schlesser_moody_xie_inoue_kumagai_et al._2012, title={Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy}, volume={5}, DOI={10.1143/apex.5.122101}, number={12}, journal={Applied Physics Express}, author={Kinoshita, T. and Hironaka, K. and Obata, T. and Nagashima, T. and Dalmau, R. and Schlesser, R. and Moody, B. and Xie, J. Q. and Inoue, S. and Kumagai, Y. and et al.}, year={2012} }
 @article{railsback_singh_pearce_mcknight_collazo_sitar_yingling_melechko_2012, title={Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)}, volume={24}, ISSN={0935-9648}, url={http://dx.doi.org/10.1002/adma.201290188}, DOI={10.1002/adma.201290188}, number={31}, journal={Advanced Materials}, publisher={Wiley}, author={Railsback, Justin G. and Singh, Abhishek and Pearce, Ryan C. and McKnight, Timothy E. and Collazo, Ramón and Sitar, Zlatko and Yingling, Yaroslava G. and Melechko, Anatoli V.}, year={2012}, month={Aug}, pages={4221–4221} }
 @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, DOI={10.1063/1.4768526}, number={11}, journal={Journal of Applied Physics}, author={Hussey, L. and Mita, S. and Xie, J. Q. and Guo, W. and Akouala, C. R. and Rajan, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2012} }
 @article{collazo_xie_gaddy_bryan_kirste_hoffmann_dalmau_moody_kumagai_nagashima_et al._2012, title={On the origin of the 265 nm absorption band in AlN bulk crystals}, volume={100}, DOI={10.1063/1.4717623}, number={19}, journal={Applied Physics Letters}, author={Collazo, R. and Xie, J. Q. and Gaddy, B. E. and Bryan, Z. and Kirste, R. and Hoffmann, M. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and et al.}, year={2012} }
 @article{neuschl_thonke_feneberg_mita_xie_dalmau_collazo_sitar_2012, title={Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN}, volume={249}, DOI={10.1002/pssb.201100381}, number={3}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Neuschl, B. and Thonke, K. and Feneberg, M. and Mita, S. and Xie, J. Q. and Dalmau, R. and Collazo, R. and Sitar, Z.}, year={2012}, pages={511–515} }
 @article{callsen_wagner_kure_reparaz_bugler_brunnmeier_nenstiel_hoffmann_hoffmann_tweedie_et al._2012, title={Optical signature of Mg-doped GaN: Transfer processes}, volume={86}, DOI={10.1103/physrevb.86.075207}, number={7}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Callsen, G. and Wagner, M. R. and Kure, T. and Reparaz, J. S. and Bugler, M. and Brunnmeier, J. and Nenstiel, C. and Hoffmann, A. and Hoffmann, M. and Tweedie, J. and et al.}, year={2012} }
 @article{wunderer_chua_northrup_yang_johnson_kneissl_garrett_shen_wraback_moody_et al._2012, title={Optically pumped UV lasers grown on bulk AlN substrates}, volume={9}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/pssc.201100424}, DOI={10.1002/pssc.201100424}, number={3-4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Wunderer, T. and Chua, C. L. and Northrup, J. E. and Yang, Z. and Johnson, N. M. and Kneissl, M. and Garrett, G. A. and Shen, H. and Wraback, M. and Moody, B. and et al.}, year={2012}, month={Feb}, pages={822–825} }
 @article{kumagai_kubota_nagashima_kinoshita_dalmau_schlesser_moody_xie_murakami_koukitu_et al._2012, title={Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport}, volume={5}, DOI={10.1143/apex.5.055504}, number={5}, journal={Applied Physics Express}, author={Kumagai, Y. and Kubota, Y. and Nagashima, T. and Kinoshita, T. and Dalmau, R. and Schlesser, R. and Moody, B. and Xie, J. Q. and Murakami, H. and Koukitu, A. and et al.}, year={2012} }
 @inproceedings{tweedie_collazo_rice_mita_xie_akouala_sitar_2012, title={Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates}, volume={9}, DOI={10.1002/pssc.201100435}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 9, no 3-4}, author={Tweedie, J. and Collazo, R. and Rice, A. and Mita, S. and Xie, J. Q. and Akouala, R. C. and Sitar, Z.}, year={2012}, pages={584–587} }
 @article{nagashima_kubota_kinoshita_kumagai_xie_collazo_murakami_okamoto_koukitu_sitar_2012, title={Structural and optical properties of carbon-doped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport}, volume={5}, DOI={10.1143/apex.5.125501}, number={12}, journal={Applied Physics Express}, author={Nagashima, T. and Kubota, Y. and Kinoshita, T. and Kumagai, Y. and Xie, J. Q. and Collazo, R. and Murakami, H. and Okamoto, H. and Koukitu, A. and Sitar, Z.}, year={2012} }
 @article{paisley_shelton_mita_collazo_christen_sitar_biegalski_maria_2012, title={Surfactant assisted growth of MgO films on GaN}, volume={101}, DOI={10.1063/1.4748886}, number={9}, journal={Applied Physics Letters}, author={Paisley, E. A. and Shelton, T. C. and Mita, S. and Collazo, R. and Christen, H. M. and Sitar, Z. and Biegalski, M. D. and Maria, J. P.}, year={2012} }
 @article{freitas_sitar_kumagai_meissener_2012, title={The 7th International Workshop on Bulk Nitride Semiconductors Koyasan, Wakayama, Japan 15-20 March 2011 Preface}, volume={350}, DOI={10.1016/j.jcrysgro.2011.12.011}, number={1}, journal={Journal of Crystal Growth}, author={Freitas, J. A. and Sitar, Z. and Kumagai, Y. and Meissener, E.}, year={2012}, pages={1–1} }
 @article{railsback_singh_pearce_mcknight_collazo_sitar_yingling_melechko_2012, title={Weakly charged cationic nanoparticles induce DNA bending and strand separation}, volume={24}, DOI={10.1002/adma.201104891}, number={31}, journal={Advanced Materials}, author={Railsback, J. G. and Singh, A. and Pearce, R. C. and McKnight, T. E. and Collazo, R. and Sitar, Z. and Yingling, Y. G. and Melechko, A. V.}, year={2012}, pages={4261-} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_moody_schlesser_kirste_hoffmann_et al._2011, title={265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization}, DOI={10.1364/cleo_si.2011.ctuu2}, booktitle={2011 Conference on Lasers and Electro-Optics (CLEO)}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Moody, B. and Schlesser, R. and Kirste, R. and Hoffmann, A. and et al.}, year={2011} }
 @article{dalmau_moody_xie_collazo_sitar_2011, title={Characterization of dislocation arrays in AlN single crystals grown by PVT}, volume={208}, ISSN={1862-6300}, url={http://dx.doi.org/10.1002/pssa.201000957}, DOI={10.1002/pssa.201000957}, number={7}, journal={physica status solidi (a)}, publisher={Wiley}, author={Dalmau, Rafael and Moody, Baxter and Xie, Jinqiao and Collazo, Ramón and Sitar, Zlatko}, year={2011}, month={May}, pages={1545–1547} }
 @article{dalmau_moody_schlesser_mita_xie_feneberg_neuschl_thonke_collazo_rice_et al._2011, title={Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates}, volume={158}, DOI={10.1149/1.3560527}, number={5}, journal={Journal of the Electrochemical Society}, author={Dalmau, R. and Moody, B. and Schlesser, R. and Mita, S. and Xie, J. and Feneberg, M. and Neuschl, B. and Thonke, K. and Collazo, R. and Rice, A. and et al.}, year={2011}, pages={H530–535} }
 @article{buegler_gamage_atalay_wang_senevirathna_kirste_xu_jamil_ferguson_tweedie_et al._2011, title={Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD}, volume={8}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/pssc.201001067}, DOI={10.1002/pssc.201001067}, number={7-8}, journal={physica status solidi (c)}, publisher={Wiley}, author={Buegler, Max and Gamage, Sampath and Atalay, R. and Wang, J. and Senevirathna, M. K. I. and Kirste, R. and Xu, T. and Jamil, M. and Ferguson, I. and Tweedie, J. and et al.}, year={2011}, month={May}, pages={2059–2062} }
 @article{mita_collazo_rice_tweedie_xie_dalmau_sitar_2011, title={Impact of gallium supersaturation on the growth of N-polar GaN}, volume={8}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/pssc.201001063}, DOI={10.1002/pssc.201001063}, number={7-8}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mita, Seiji and Collazo, Ramón and Rice, Anthony and Tweedie, James and Xie, Jinqiao and Dalmau, Rafael and Sitar, Zlatko}, year={2011}, month={Jun}, pages={2078–2080} }
 @article{xie_mia_dalmau_collazo_rice_tweedie_sitar_2011, title={Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates}, volume={8}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/pssc.201001009}, DOI={10.1002/pssc.201001009}, number={7-8}, journal={physica status solidi (c)}, publisher={Wiley}, author={Xie, Jinqiao and Mia, Seiji and Dalmau, Rafael and Collazo, Ramón and Rice, Anthony and Tweedie, James and Sitar, Zlatko}, year={2011}, month={Jun}, pages={2407–2409} }
 @article{xie_mita_hussey_rice_tweedie_lebeau_collazo_sitar_2011, title={On the strain in n-type GaN}, volume={99}, DOI={10.1063/1.3647772}, number={14}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Hussey, L. and Rice, A. and Tweedie, J. and LeBeau, J. and Collazo, R. and Sitar, Z.}, year={2011} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_sitar_2011, title={Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications}, volume={8}, DOI={10.1002/pssc.201000964}, number={7-8}, booktitle={Physica status solidi c: current topics in solid state physics, vol 8, no 7-8}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Sitar, Z.}, year={2011} }
 @article{feneberg_neuschl_thonke_collazo_rice_sitar_dalmau_xie_mita_goldhahn_2011, title={Sharp bound and free exciton lines from homoepitaxial AlN}, volume={208}, DOI={10.1002/pssa.201000947}, number={7}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Feneberg, M. and Neuschl, B. and Thonke, K. and Collazo, R. and Rice, A. and Sitar, Z. and Dalmau, R. and Xie, J. Q. and Mita, S. and Goldhahn, R.}, year={2011}, pages={1520–1522} }
 @article{craft_rice_collazo_sitar_maria_2011, title={Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN}, volume={98}, DOI={10.1063/1.3554762}, number={8}, journal={Applied Physics Letters}, author={Craft, H. S. and Rice, A. L. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2011} }
 @article{xie_mita_rice_tweedie_hussey_collazo_sitar_2011, title={Strain in Si doped GaN and the Fermi level effect}, volume={98}, DOI={10.1063/1.3589978}, number={20}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Rice, A. and Tweedie, J. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2011} }
 @article{paisley_losego_gaddy_tweedie_collazo_sitar_irving_maria_2011, title={Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions}, volume={2}, DOI={10.1038/ncomms1470}, journal={Nature Communications}, author={Paisley, E. A. and Losego, M. D. and Gaddy, B. E. and Tweedie, J. S. and Collazo, R. and Sitar, Z. and Irving, D. L. and Maria, J. P.}, year={2011} }
 @article{kirste_collazo_callsen_wagner_kure_sebastian reparaz_mita_xie_rice_tweedie_et al._2011, title={Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN}, volume={110}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.3656987}, DOI={10.1063/1.3656987}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kirste, Ronny and Collazo, Ramón and Callsen, Gordon and Wagner, Markus R. and Kure, Thomas and Sebastian Reparaz, Juan and Mita, Seji and Xie, Jinqiao and Rice, Anthony and Tweedie, James and et al.}, year={2011}, month={Nov}, pages={093503} }
 @article{losego_craft_paisley_mita_collazo_sitar_maria_2010, title={Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux}, volume={25}, DOI={10.1557/jmr.2010.0096}, number={4}, journal={Journal of Materials Research}, author={Losego, M. D. and Craft, H. S. and Paisley, E. A. and Mita, S. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2010}, pages={670–679} }
 @article{koechlin_sulser_sitar_poberaj_gunter_2010, title={Free-standing lithium niobate microring resonators for hybrid integrated optics}, volume={22}, DOI={10.1109/lpt.2009.2038174}, number={4}, journal={IEEE Photonics Technology Letters}, author={Koechlin, M. and Sulser, F. and Sitar, Z. and Poberaj, G. and Gunter, P.}, year={2010}, pages={251–253} }
 @inproceedings{herro_zhuang_schlesser_sitar_2010, title={Growth of AlN single crystalline boules}, volume={312}, DOI={10.1016/j.jcrysgro.2010.04.005}, number={18}, booktitle={Journal of Crystal Growth}, author={Herro, Z. G. and Zhuang, D. and Schlesser, R. and Sitar, Z.}, year={2010}, pages={2519–2521} }
 @inproceedings{collazo_mita_xie_rice_tweedie_dalmau_sitar_2010, title={Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity}, volume={207}, DOI={10.1002/pssa.200982629}, number={1}, booktitle={Physica Status Solidi. A, Applications and Materials Science}, author={Collazo, R. and Mita, S. and Xie, J. Q. and Rice, A. and Tweedie, J. and Dalmau, R. and Sitar, Z.}, year={2010}, pages={45–48} }
 @inproceedings{rice_collazo_tweedie_xie_mita_sitar_2010, title={Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE}, volume={312}, DOI={10.1016/j.jcrysgro.2009.09.011}, number={8}, booktitle={Journal of Crystal Growth}, author={Rice, A. and Collazo, R. and Tweedie, J. and Xie, J. and Mita, S. and Sitar, Z.}, year={2010}, pages={1321–1324} }
 @article{kirste_wagner_schulze_strittmatter_collazo_sitar_alevli_dietz_hoffmann_2010, title={Optical properties of InN grown on templates with controlled surface polarities}, volume={207}, DOI={10.1002/pssa.201026086}, number={10}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Kirste, R. and Wagner, M. R. and Schulze, J. H. and Strittmatter, A. and Collazo, R. and Sitar, Z. and Alevli, M. and Dietz, N. and Hoffmann, A.}, year={2010}, pages={2351–2354} }
 @misc{schlesser_noveski_sitar_2010, title={Seeded growth process for preparing aluminum nitride single crystals}, volume={7,678,195}, number={2010 Mar. 16}, author={Schlesser, R. and Noveski, V. and Sitar, Z.}, year={2010} }
 @article{rice_collazo_tweedie_dalmau_mita_xie_sitar_2010, title={Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition}, volume={108}, DOI={10.1063/1.3467522}, number={4}, journal={Journal of Applied Physics}, author={Rice, A. and Collazo, R. and Tweedie, J. and Dalmau, R. and Mita, S. and Xie, J. and Sitar, Z.}, year={2010} }
 @article{xie_mita_collazo_rice_tweedie_sitar_2010, title={The effect of N-polar GaN domains as Ohmic contacts}, volume={97}, DOI={10.1063/1.3491173}, number={12}, journal={Applied Physics Letters}, author={Xie, J. and Mita, S. and Collazo, R. and Rice, A. and Tweedie, J. and Sitar, Z.}, year={2010} }
 @article{tweedie_collazo_rice_xie_mita_dalmau_sitar_2010, title={X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy}, volume={108}, DOI={10.1063/1.3457149}, number={4}, journal={Journal of Applied Physics}, author={Tweedie, J. and Collazo, R. and Rice, A. and Xie, J. Q. and Mita, S. and Dalmau, R. and Sitar, Z.}, year={2010} }
 @article{ehrentraut_sitar_2009, title={Advances in bulk crystal growth of AlN and GaN}, volume={34}, DOI={10.1557/mrs2009.76}, number={4}, journal={MRS Bulletin}, author={Ehrentraut, D. and Sitar, Z.}, year={2009}, pages={259–265} }
 @misc{schlesser_dalmau_noveski_sitar_2009, title={Dense, shaped articles constructed of a refractory material and methods of preparing such articles}, volume={7,632,454}, number={1999 Dec. 15}, author={Schlesser, R. and Dalmau, R. F. and Noveski, V. and Sitar, Z.}, year={2009} }
 @article{losego_kourkoutis_mita_craft_muller_collazo_sitar_maria_2009, title={Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces}, volume={311}, DOI={10.1016/j.jcrysgro.2008.11.085}, number={4}, journal={Journal of Crystal Growth}, author={Losego, M. D. and Kourkoutis, L. F. and Mita, S. and Craft, H. S. and Muller, D. A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2009}, pages={1106–1109} }
 @inproceedings{mita_collazo_sitar_2009, title={Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition}, volume={311}, DOI={10.1016/j.jcrysgro.2009.01.075}, number={10}, booktitle={Journal of Crystal Growth}, author={Mita, S. and Collazo, R. and Sitar, Z.}, year={2009}, pages={3044–3048} }
 @article{lu_collazo_dalmau_durkaya_dietz_raghothamachar_dudley_sitar_2009, title={Seeded growth of AlN bulk crystals in m- and c-orientation}, volume={312}, DOI={10.1016/j.jcrysgro.2009.10.008}, number={1}, journal={Journal of Crystal Growth}, author={Lu, P. and Collazo, R. and Dalmau, R. F. and Durkaya, G. and Dietz, N. and Raghothamachar, B. and Dudley, M. and Sitar, Z.}, year={2009}, pages={58–63} }
 @article{liu_collazo_mita_sitar_pennycook_duscher_2008, title={Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-Angstrom resolution}, volume={20}, DOI={10.1002/adma.200702522}, number={11}, journal={Advanced Materials}, author={Liu, F. and Collazo, R. and Mita, S. and Sitar, Z. and Pennycook, S. J. and Duscher, G.}, year={2008}, pages={2162-} }
 @article{losego_mita_collazo_sitar_maria_2008, title={Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces}, volume={310}, DOI={10.1016/j.jcrysgro.2007.10.002}, number={1}, journal={Journal of Crystal Growth}, author={Losego, M. D. and Mita, S. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2008}, pages={51–56} }
 @article{collazo_mita_rice_dalmau_wellenius_muth_sitar_2008, title={Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity}, volume={5}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200778624}, DOI={10.1002/pssc.200778624}, number={6}, journal={physica status solidi (c)}, publisher={Wiley}, author={Collazo, Ramón and Mita, Seiji and Rice, Anthony and Dalmau, Rafael and Wellenius, Patrick and Muth, John and Sitar, Zlatko}, year={2008}, month={May}, pages={1977–1979} }
 @article{mita_collazo_rice_dalmau_sitar_2008, title={Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition}, volume={104}, DOI={10.1063/1.2952027}, number={1}, journal={Journal of Applied Physics}, author={Mita, S. and Collazo, R. and Rice, A. and Dalmau, R. F. and Sitar, Z.}, year={2008} }
 @article{kim_choi_yoo_ryou_dupuis_dalmau_lu_sitar_2008, title={Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition}, volume={93}, DOI={10.1063/1.2959064}, number={2}, journal={Applied Physics Letters}, author={Kim, H. J. and Choi, S. and Yoo, D. and Ryou, J. H. and Dupuis, R. D. and Dalmau, R. F. and Lu, P. and Sitar, Z.}, year={2008} }
 @article{lu_edgar_cao_hohn_dalmau_schlesser_sitar_2008, title={Seeded growth of AlN on SiC substrates and defect characterization}, volume={310}, DOI={10.1016/j.jcrysgro.2008.01.010}, number={10}, journal={Journal of Crystal Growth}, author={Lu, P. and Edgar, J. H. and Cao, C. and Hohn, K. and Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2008}, pages={2464–2470} }
 @article{craft_collazo_losego_mita_sitar_maria_2008, title={Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface}, volume={92}, DOI={10.1063/1.2887878}, number={8}, journal={Applied Physics Letters}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Mita, S. and Sitar, Z. and Maria, J. P.}, year={2008} }
 @article{craft_collazo_losego_sitar_maria_2008, title={Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy}, volume={26}, DOI={10.1116/1.3000058}, number={6}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Sitar, Z. and Maria, J. P.}, year={2008}, pages={1507–1510} }
 @article{dietz_alevli_atalay_durkaya_collazo_tweedie_mita_sitar_2008, title={The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition}, volume={92}, DOI={10.1063/1.2840192}, number={4}, journal={Applied Physics Letters}, author={Dietz, N. and Alevli, M. and Atalay, R. and Durkaya, G. and Collazo, R. and Tweedie, J. and Mita, S. and Sitar, Z.}, year={2008} }
 @article{cai_mecouch_zheng_zhang_sitar_2008, title={Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth}, volume={51}, DOI={10.1016/j.ijheatmasstransfer.2007.12.004}, number={5-6}, journal={International Journal of Heat and Mass Transfer}, author={Cai, D. and Mecouch, W. J. and Zheng, L. L. and Zhang, H. and Sitar, Z.}, year={2008}, pages={1264–1280} }
 @article{liu_collazo_mita_sitar_duscher_2008, title={Three-dimensional geometry of nanometer-scale AlN pits: A new template for quantum dots?}, volume={20}, DOI={10.1002/adma.200701288}, number={1}, journal={Advanced Materials}, author={Liu, F. D. and Collazo, R. and Mita, S. and Sitar, Z. and Duscher, G.}, year={2008}, pages={134-} }
 @article{lu_collazo_dalmau_durkaya_dietz_sitar_2008, title={lu Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations}, volume={93}, DOI={10.1063/1.2996413}, number={13}, journal={Applied Physics Letters}, author={Lu, P. and Collazo, R. and Dalmau, R. F. and Durkaya, G. and Dietz, N. and Sitar, Z.}, year={2008} }
 @article{craft_collazo_losego_mita_sitar_maria_2007, title={Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy}, volume={102}, DOI={10.1063/1.2785022}, number={7}, journal={Journal of Applied Physics}, author={Craft, H. S. and Collazo, R. and Losego, M. D. and Mita, S. and Sitar, Z. and Maria, J.-P.}, year={2007} }
 @article{cai_zheng_zhang_zhuang_herro_schlesser_sitar_2007, title={Effect of thermal environment evolution on A1N bulk sublimation crystal growth}, volume={306}, DOI={10.1016/j.jcrysgro.2007.04.037}, number={1}, journal={Journal of Crystal Growth}, author={Cai, D. and Zheng, L. L. and Zhang, H. and Zhuang, D. and Herro, Z. G. and Schlesser, R. and Sitar, Z.}, year={2007}, pages={39–46} }
 @article{neuburger_aleksov_schlesser_kohn_sitar_2007, title={Electronic high temperature characteristics of AlN}, volume={43}, DOI={10.1049/el:20070275}, number={10}, journal={Electronics Letters}, author={Neuburger, M. and Aleksov, A. and Schlesser, R. and Kohn, E. and Sitar, Z.}, year={2007}, pages={592–594} }
 @article{losego_mita_collazo_sitar_maria_2007, title={Epitaxial calcium oxide films deposited on gallium nitride surfaces}, volume={25}, DOI={10.1116/1.2710243}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Losego, M. D. and Mita, S. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2007}, pages={1029–1032} }
 @article{mita_collazo_dalmau_sitar_2007, title={Growth of highly resistive Ga-polar GaN by LP-MOVPE}, volume={4}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200674837}, DOI={10.1002/pssc.200674837}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mita, Seiji and Collazo, Ramón and Dalmau, Rafael and Sitar, Zlatko}, year={2007}, month={Jun}, pages={2260–2263} }
 @article{collazo_mita_dalmau_sitar_2007, title={Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE}, volume={4}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200674874}, DOI={10.1002/pssc.200674874}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Collazo, R. and Mita, S. and Dalmau, R. and Sitar, Z.}, year={2007}, month={Jun}, pages={2597–2600} }
 @article{collazo_mita_rice_dalmau_sitar_2007, title={Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping}, volume={91}, DOI={10.1063/1.2816893}, number={21}, journal={Applied Physics Letters}, author={Collazo, R. and Mita, S. and Rice, A. and Dalmau, R. F. and Sitar, Z.}, year={2007} }
 @article{gu_edgar_raghothamachar_dudley_zhuang_sitar_coffey_2007, title={Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer}, volume={22}, DOI={10.1557/JMR.2007.0077}, number={3}, journal={Journal of Materials Research}, author={Gu, Z. and Edgar, J. H. and Raghothamachar, B. and Dudley, M. and Zhuang, D. and Sitar, Z. and Coffey, D. W.}, year={2007}, pages={675–680} }
 @article{adekore_callahan_bouthillette_dalmau_sitar_2007, title={Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route}, volume={308}, DOI={10.1016/j.jcrysgro.2007.07.058}, number={1}, journal={Journal of Crystal Growth}, author={Adekore, B. T. and Callahan, M. J. and Bouthillette, L. and Dalmau, R. and Sitar, Z.}, year={2007}, pages={71–79} }
 @article{liu_collazo_mita_sitar_duscher_pennycook_2007, title={The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence}, volume={91}, DOI={10.1063/1.2815748}, number={20}, journal={Applied Physics Letters}, author={Liu, F. and Collazo, R. and Mita, S. and Sitar, Z. and Duscher, G. and Pennycook, S. J.}, year={2007} }
 @article{dalmau_collazo_mita_sitar_2007, title={X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution}, volume={36}, DOI={10.1007/s11664-006-0044-x}, number={4}, journal={Journal of Electronic Materials}, author={Dalmau, R. and Collazo, R. and Mita, S. and Sitar, Z.}, year={2007}, pages={414–419} }
 @article{adekore_rakes_wang_callahan_pendurti_sitar_2006, title={Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates}, volume={35}, DOI={10.1007/BF02692573}, number={5}, journal={Journal of Electronic Materials}, author={Adekore, B. T. and Rakes, K. and Wang, B. and Callahan, M. J. and Pendurti, S. and Sitar, Z.}, year={2006}, pages={1104–1111} }
 @article{raghothamachar_bai_dudley_dalmau_zhuang_herro_schlesser_sitar_wang_callahan_et al._2006, title={Characterization of bulk grown GaN and AlN single crystal materials}, volume={287}, DOI={10.1016/j.jcrysgro.2005.11.042}, number={2}, journal={Journal of Crystal Growth}, author={Raghothamachar, B. and Bai, J. and Dudley, M. and Dalmau, R. and Zhuang, D. J. and Herro, Z. and Schlesser, R. and Sitar, Z. and Wang, B. G. and Callahan, M. and et al.}, year={2006}, pages={349–353} }
 @article{govindaraju_aleksov_li_okuzumi_wolter_collazo_prater_sitar_2006, title={Comparative study of textured diamond films by thermal conductivity measurements}, volume={85}, DOI={10.1007/s00339-006-3697-7}, number={3}, journal={Applied Physics. A, Materials Science & Processing (Online)}, author={Govindaraju, N. and Aleksov, A. and Li, X. and Okuzumi, F. and Wolter, S. D. and Collazo, R. and Prater, J. T. and Sitar, Z.}, year={2006}, pages={331–335} }
 @article{aleksov_collazo_mita_schlesser_sitar_2006, title={Current-voltage characteristics of n/n lateral polarity junctions in GaN}, volume={89}, DOI={10.1063/1.2244046}, number={5}, journal={Applied Physics Letters}, author={Aleksov, A. and Collazo, R. and Mita, S. and Schlesser, R. and Sitar, Z.}, year={2006} }
 @article{collazo_mita_aleksov_schlesser_sitar_2006, title={Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers}, volume={287}, DOI={10.1016/j.jcrysgro.2005.10.080}, number={2}, journal={Journal of Crystal Growth}, author={Collazo, R. and Mita, S. and Aleksov, A. and Schlesser, R. and Sitar, Z.}, year={2006}, pages={586–590} }
 @article{li_perkins_collazo_nemanich_sitar_2006, title={Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD}, volume={15}, DOI={10.1016/j.diamond.2006.09.008}, number={11-12}, journal={Diamond and Related Materials}, author={Li, X. L. and Perkins, J. and Collazo, R. and Nemanich, R. J. and Sitar, Z.}, year={2006}, pages={1784–1788} }
 @article{craft_ihlefeld_losego_collazo_sitar_maria_2006, title={MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy}, volume={88}, DOI={10.1063/1.2201041}, number={21}, journal={Applied Physics Letters}, author={Craft, H. S. and Ihlefeld, J. F. and Losego, M. D. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2006} }
 @article{craft_collazo_sitar_maria_2006, title={Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)}, volume={24}, DOI={10.1116/1.2216721}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Craft, H. S. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2006}, pages={2105–2110} }
 @article{zhuang_herro_schlesser_raghothamachar_dudley_sitar_2006, title={Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport}, volume={35}, DOI={10.1007/s11664-006-0141-x}, number={7}, journal={Journal of Electronic Materials}, author={Zhuang, D. and Herro, Z. G. and Schlesser, R. and Raghothamachar, B. and Dudley, M. and Sitar, Z.}, year={2006}, pages={1513–1517} }
 @article{herro_zhuang_schlesser_collazo_sitar_2006, title={Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport}, volume={286}, DOI={10.1016/j.jcrysgro.2005.10.074}, number={2}, journal={Journal of Crystal Growth}, author={Herro, Z. G. and Zhuang, D. and Schlesser, R. and Collazo, R. and Sitar, Z.}, year={2006}, pages={205–208} }
 @article{zhuang_herro_schlesser_sitar_2006, title={Seeded growth of AlN single crystals by physical vapor transport}, volume={287}, DOI={10.1016/j.jcrysgro.2005.11.047}, number={2}, journal={Journal of Crystal Growth}, author={Zhuang, D. and Herro, Z. G. and Schlesser, R. and Sitar, Z.}, year={2006}, pages={372–375} }
 @article{aleksov_gobien_li_prater_sitar_2006, title={Silicon-on-diamond - An engineered substrate for electronic applications}, volume={15}, DOI={10.1016/j.diamond.2005.09.012}, number={2-3}, journal={Diamond and Related Materials}, author={Aleksov, A. and Gobien, J. M. and Li, X. and Prater, J. T. and Sitar, Z.}, year={2006}, pages={248–253} }
 @article{dalmau_schlesser_rodriguez_nemanich_sitar_2005, title={AlN bulk crystals grown on SiC seeds}, volume={281}, DOI={10.1016/j.jcrysgro.2005.03.012}, number={1}, journal={Journal of Crystal Growth}, author={Dalmau, R. and Schlesser, R. and Rodriguez, B. J. and Nemanich, R. J. and Sitar, Z.}, year={2005}, pages={68–74} }
 @article{freitas_sitar_2005, title={Bulk nitride workshop - Preface}, volume={281}, DOI={10.1016/j.jcrysgro.2005.04.026}, number={1}, journal={Journal of Crystal Growth}, author={Freitas, J. A. and Sitar, Z.}, year={2005}, pages={1} }
 @article{schlesser_dalmau_zhuang_collazo_sitar_2005, title={Crucible materials for growth of aluminum nitride crystals}, volume={281}, DOI={10.1016/j.jcrysgro.2005.03.014}, number={1}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Dalmau, R. and Zhuang, D. and Collazo, R. and Sitar, Z.}, year={2005}, pages={75–80} }
 @article{wu_noveski_zhang_schlesser_mahajan_beaudoin_sitar_2005, title={Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling}, volume={5}, DOI={10.1021/cg050014m}, number={4}, journal={Crystal Growth and Design}, author={Wu, B. and Noveski, V. and Zhang, H. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2005}, pages={1491–1498} }
 @article{aleksov_wolter_prater_sitar_2005, title={Fabrication and thermal evaluation of silicon on diamond wafers}, volume={34}, DOI={10.1007/s11664-005-0100-y}, number={7}, journal={Journal of Electronic Materials}, author={Aleksov, A. and Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2005}, pages={1089–1094} }
 @article{mecouch_reitmeier_park_davis_sitar_2005, title={Growth of gallium nitride via iodine vapor phase growth}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461532}, DOI={10.1002/pssc.200461532}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mecouch, W. J. and Reitmeier, Z. J. and Park, J.-S. and Davis, R. F. and Sitar, Z.}, year={2005}, month={May}, pages={2129–2132} }
 @article{dalmau_schlesser_sitar_2005, title={Polarity and morphology in seeded growth of bulk AlN on SiC}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461511}, DOI={10.1002/pssc.200461511}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2036–2039} }
 @article{collazo_mita_schlesser_sitar_2005, title={Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461546}, DOI={10.1002/pssc.200461546}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Collazo, R. and Mita, S. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2117–2120} }
 @article{senawiratne_strassburg_dietz_haboeck_hoffmann_noveski_dalmau_schlesser_sitar_2005, title={Raman, photoluminescence and absorption studies on high quality AlN single crystals}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461509}, DOI={10.1002/pssc.200461509}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Senawiratne, J. and Strassburg, M. and Dietz, N. and Haboeck, U. and Hoffmann, A. and Noveski, V. and Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2774–2778} }
 @article{noveski_schlesser_raghothamachar_dudley_mahajan_beaudoin_sitar_2005, title={Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules}, volume={279}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/j.jcrysgro.2004.12.027}, DOI={10.1016/j.jcrysgro.2004.12.027}, number={1-2}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Noveski, V. and Schlesser, R. and Raghothamachar, B. and Dudley, M. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2005}, month={May}, pages={13–19} }
 @article{aleksov_li_govindaraju_gobien_wolter_prater_sitar_2005, title={Silicon-on-diamond: An advanced silicon-on-insulator technology}, volume={14}, DOI={10.1016/j.diamond.2005.01.019}, number={07-Mar}, journal={Diamond and Related Materials}, author={Aleksov, A. and Li, X. and Govindaraju, N. and Gobien, J. M. and Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2005}, pages={308–313} }
 @misc{yushin_kvit_sitar_2005, title={Transmission electron microscopy studies of the bonded SiC-SiC interface}, volume={40}, DOI={10.1007/s10853-005-0779-4}, number={16}, journal={Journal of Materials Science}, author={Yushin, G. N. and Kvit, A. V. and Sitar, Z.}, year={2005}, pages={4369–4371} }
 @article{chen_skromme_dalmau_schlesser_sitar_chen_sun_yang_khan_nakarmi_et al._2004, title={Band-edge exciton states in AlN single crystals and epitaxial layers}, volume={85}, DOI={10.1063/1.1818733}, number={19}, journal={Applied Physics Letters}, author={Chen, L. and Skromme, B. J. and Dalmau, R. F. and Schlesser, R. and Sitar, Z. and Chen, C. and Sun, W. and Yang, J. and Khan, M. A. and Nakarmi, M. L. and et al.}, year={2004}, pages={4334–4336} }
 @article{noveski_schlesser_mahajan_beaudoin_sitar_2004, title={Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere}, volume={9}, DOI={10.1557/s1092578300000375}, number={2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Noveski, V. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2004} }
 @article{yushin_sitar_2004, title={Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface}, volume={84}, DOI={10.1063/1.1753065}, number={20}, journal={Applied Physics Letters}, author={Yushin, G. N. and Sitar, Z.}, year={2004}, pages={3993–3995} }
 @article{noveski_schlesser_mahajan_beaudoin_sitar_2004, title={Mass transfer in A1N crystal growth at high temperatures}, volume={264}, DOI={10.1016/j.jcrysgro.2004.01.028}, number={1/3}, journal={Journal of Crystal Growth}, author={Noveski, V. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2004}, pages={369–378} }
 @article{brenner_schlesser_sitar_dalmau_collazo_li_2004, title={Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport}, volume={560}, DOI={10.1016/j.susc.2004.05.003}, number={03-Jan}, journal={Surface Science}, author={Brenner, D. W. and Schlesser, R. and Sitar, Z. and Dalmau, R. and Collazo, R. and Li, Y.}, year={2004}, pages={L202–206} }
 @article{grenko_reynolds_schlesser_hren_bachmann_sitar_kotula_2004, title={Nanoscale GaN whiskers fabricated by photoelectrochemical etching}, volume={96}, DOI={10.1063/1.1788841}, number={9}, journal={Journal of Applied Physics}, author={Grenko, J. A. and Reynolds, C. L. and Schlesser, R. and Hren, J. J. and Bachmann, K. and Sitar, Z. and Kotula, P. G.}, year={2004}, pages={5185–5188} }
 @article{robertson_kawarada_kohn_sitar_2004, title={Proceedings of the 14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide}, volume={13}, ISSN={0925-9635}, url={http://dx.doi.org/10.1016/j.diamond.2004.02.001}, DOI={10.1016/j.diamond.2004.02.001}, number={4-8}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Robertson, John and Kawarada, Hiroshi and Kohn, Erhard and Sitar, Zlatko}, year={2004}, month={Apr}, pages={xiii} }
 @article{wolter_borca-tasciuc_chen_prater_sitar_2004, title={Processing and thermal properties of highly oriented diamond thin films}, volume={469-70}, DOI={10.1016/j.tsf.2004.08.062}, number={Dec 22 2004}, journal={Thin Solid Films}, author={Wolter, S. D. and Borca-Tasciuc, D. and Chen, G. and Prater, J. T. and Sitar, Z.}, year={2004}, pages={105–111} }
 @article{grenko_reynolds_schlesser_bachmann_rietmeier_davis_sitar_2004, title={Selective etching of GaN from AlGaN/GaN and AlN/GaN structures}, volume={9}, DOI={10.1557/s1092578300000405}, number={5}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Grenko, J. A. and Reynolds, C. L. and Schlesser, R. and Bachmann, K. and Rietmeier, Z. and Davis, R. F. and Sitar, Z.}, year={2004} }
 @article{strassburg_senawiratne_dietz_haboeck_hoffmann_noveski_dalmau_schlesser_sitar_2004, title={The  growth and optical properties of large, high-quality AlN single crystals}, volume={96}, DOI={10.1063/1.1801159}, number={10}, journal={Journal of Applied Physics}, author={Strassburg, M. and Senawiratne, J. and Dietz, N. and Haboeck, U. and Hoffmann, A. and Noveski, V. and Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2004}, pages={5870–5876} }
 @article{yushin_aleksov_wolter_okuzumi_prater_sitar_2004, title={Wafer bonding of highly oriented diamond to silicon}, volume={13}, DOI={10.1016/j.diamond.2004.04.007}, number={10}, journal={Diamond and Related Materials}, author={Yushin, G. N. and Aleksov, A. and Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2004}, pages={1816–1821} }
 @article{chang_chattopadhyay_chen_chen_chen_chen_collazo_sitar_2003, title={Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates}, volume={68}, DOI={10.1103/physrevb.68.125322}, number={12}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Chang, C. S. and Chattopadhyay, S. and Chen, L. C. and Chen, K. H. and Chen, C. W. and Chen, Y. F. and Collazo, R. and Sitar, Z.}, year={2003} }
 @article{wolter_okuzumi_prater_sitar_2003, title={Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond}, volume={440}, DOI={10.1016/S0040-6090(03)00827-7}, number={02-Jan}, journal={Thin Solid Films}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={145–151} }
 @article{collazo_schlesser_roskowski_miraglia_davis_sitar_2003, title={Electron energy distribution during high-field transport in AlN}, volume={93}, DOI={10.1063/1.1543633}, number={5}, journal={Journal of Applied Physics}, author={Collazo, R. and Schlesser, R. and Roskowski, A. and Miraglia, P. and Davis, R. F. and Sitar, Z.}, year={2003}, pages={2765–2771} }
 @article{schlesser_mcclure_sitar_2003, title={Mechanisms limiting electron field emission from diamond}, volume={13}, number={5}, journal={New Diamond and Frontier Carbon Technology}, author={Schlesser, R. and McClure, M. T. and Sitar, Z.}, year={2003}, pages={285–295} }
 @article{wolter_yushin_prater_sitar_2003, title={Processing routes for direct bonding of silicon to epitaxially textured diamond}, volume={12}, DOI={10.1016/S0925-9635(02)00392-8}, number={3-7}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Yushin, G. N. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={257–261} }
 @article{wolter_borca-tasciuc_chen_govindaraju_collazo_okuzumi_prater_sitar_2003, title={Thermal conductivity of epitaxially textured diamond films}, volume={12}, DOI={10.1016/S0925-9635(02)00248-0}, number={1}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Borca-Tasciuc, D. A. and Chen, G. and Govindaraju, N. and Collazo, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={61–64} }
 @article{wolter_okuzumi_prater_sitar_2002, title={AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100)}, volume={149}, DOI={10.1149/1.1430720}, number={2}, journal={Journal of the Electrochemical Society}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={G114–117} }
 @article{wolter_yushin_okuzumi_stoner_prater_sitar_2002, title={Direct fusion bonding of silicon to polycrystalline diamond}, volume={11}, DOI={10.1016/S0925-9635(01)00608-2}, number={3-6}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Yushin, G. N. and Okuzumi, F. and Stoner, B. R. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={482–486} }
 @article{collazo_schlesser_sitar_2002, title={Experimental observation of electron velocity overshoot in AlN}, volume={81}, DOI={10.1063/1.1534407}, number={27}, journal={Applied Physics Letters}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2002}, pages={5189–5191} }
 @article{shin_arkun_thomson_miraglia_preble_schlesser_wolter_sitar_davis_2002, title={Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio}, volume={236}, DOI={10.1016/S0022-0248(02)00825-4}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Arkun, E. and Thomson, D. B. and Miraglia, P. and Preble, E. and Schlesser, R. and Wolter, S. and Sitar, Z. and Davis, R. F.}, year={2002}, pages={529–537} }
 @article{schlesser_sitar_2002, title={Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere}, volume={234}, DOI={10.1016/S0022-0248(01)01720-1}, number={2-3}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Sitar, Z.}, year={2002}, pages={349–353} }
 @article{shin_thomson_schlesser_davis_sitar_2002, title={High temperature nucleation and growth of GaN crystals from the vapor phase}, volume={241}, DOI={10.1016/S0022-0248(02)01290-3}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Thomson, D. B. and Schlesser, R. and Davis, R. F. and Sitar, Z.}, year={2002}, pages={404–415} }
 @article{collazo_schlesser_sitar_2002, title={Role of adsorbates in field emission from nanotubes}, volume={11}, DOI={10.1016/S0925-9635(01)00585-4}, number={3-6}, journal={Diamond and Related Materials}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2002}, pages={769–773} }
 @article{schlesser_dalmau_sitar_2002, title={Seeded growth of AlN bulk single crystals by sublimation}, volume={241}, DOI={10.1016/S0022-0248(02)01319-2}, number={4}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Dalmau, R. and Sitar, Z.}, year={2002}, pages={416–420} }
 @article{yushin_wolter_kvit_collazo_stoner_prater_sitar_2002, title={Study of fusion bonding of diamond to silicon for silicon-on- diamond technology}, volume={81}, DOI={10.1063/1.1516636}, number={17}, journal={Applied Physics Letters}, author={Yushin, G. N. and Wolter, S. D. and Kvit, A. V. and Collazo, R. and Stoner, B. R. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={3275–3277} }
 @article{raghothamachar_vetter_dudley_dalmau_schlesser_sitar_michaels_kolis_2002, title={Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN}, volume={246}, DOI={10.1016/S0022-0248(02)01751-7}, number={3-4}, journal={Journal of Crystal Growth}, author={Raghothamachar, B. and Vetter, W. M. and Dudley, M. and Dalmau, R. and Schlesser, R. and Sitar, Z. and Michaels, E. and Kolis, J. W.}, year={2002}, pages={271–280} }
 @article{wolter_schlesser_okuzumi_prater_sitar_2001, title={Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality}, volume={10}, DOI={10.1016/S0925-9635(01)00487-3}, number={11}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Schlesser, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={2092–2095} }
 @article{wolter_okuzumi_prater_sitar_2001, title={Frequency and duty cycle dependence on the pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon}, volume={186}, DOI={10.1002/1521-396x(200108)186:2<331::aid-pssa331>3.0.co;2-1}, number={2}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={331–337} }
 @article{wolter_schlesser_okuzumi_prater_sitar_2001, title={Process optimization in the low-pressure flat flame growth of diamond}, volume={10}, DOI={10.1016/S0925-9635(00)00477-5}, number={3-7}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Schlesser, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={289–294} }
 @article{wolter_prater_sitar_2001, title={Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame}, volume={226}, DOI={10.1016/S0022-0248(01)01274-X}, number={1}, journal={Journal of Crystal Growth}, author={Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={88–94} }
 @article{collazo_schlesser_sitar_2001, title={Two field-emission states of single-walled carbon nanotubes}, volume={78}, DOI={10.1063/1.1361089}, number={14}, journal={Applied Physics Letters}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2001}, pages={2058–2060} }
 @article{hren_zhirnov_sitar_wojak_2000, title={Characterization of dielectrics on the 'tips of needles'}, volume={30}, number={4}, journal={Electrochemistry}, author={Hren, J. J. and Zhirnov, V. V. and Sitar, Z. and Wojak, G.}, year={2000}, pages={210–215} }
 @article{schlesser_collazo_bower_zhou_sitar_2000, title={Energy distribution of field emitted electrons from carbon nanotubes}, volume={9}, DOI={10.1016/s0925-9635(99)00277-0}, number={3-6}, journal={Diamond and Related Materials}, author={Schlesser, R. and Collazo, R. and Bower, C. and Zhou, O. and Sitar, Z.}, year={2000}, pages={1201–1204} }
 @article{balkas_sitar_bergman_shmagin_muth_kolbas_nemanich_davis_2000, title={Growth and characterization of GaN single crystals}, volume={208}, DOI={10.1016/S0022-0248(99)00445-5}, number={1-4}, journal={Journal of Crystal Growth}, author={Balkas, C. M. and Sitar, Z. and Bergman, L. and Shmagin, I. K. and Muth, J. F. and Kolbas, R. and Nemanich, R. J. and Davis, R. F.}, year={2000}, pages={100–106} }
 @article{collazo_schlesser_roskowski_davis_sitar_2000, title={Hot electron transport in AlN}, volume={88}, DOI={10.1063/1.1318386}, number={10}, journal={Journal of Applied Physics}, author={Collazo, R. and Schlesser, R. and Roskowski, A. and Davis, R. F. and Sitar, Z.}, year={2000}, pages={5865–5869} }
 @article{park_sowers_rinne_schlesser_bergman_nemanich_sitar_hren_cuomo_zhirnov_et al._1999, title={Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond}, volume={17}, DOI={10.1116/1.590630}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Park, M. and Sowers, A. T. and Rinne, C. L. and Schlesser, R. and Bergman, L. and Nemanich, R. J. and Sitar, Z. and Hren, J. J. and Cuomo, J. J. and Zhirnov, V. V. and et al.}, year={1999}, pages={734–739} }
 @article{wolden_draper_sitar_prater_1999, title={The influences of reactant composition and substrate material on the combustion synthesis of diamond}, volume={14}, DOI={10.1557/JMR.1999.0038}, number={1}, journal={Journal of Materials Research}, author={Wolden, C. A. and Draper, C. E. and Sitar, Z. and Prater, J. T.}, year={1999}, pages={259–269} }
 @article{yang_wolden_liu_schlesser_davis_prater_sitar_1998, title={Coalesced oriented diamond films on nickel}, volume={13}, DOI={10.1557/JMR.1998.0157}, number={5}, journal={Journal of Materials Research}, author={Yang, P. C. and Wolden, C. A. and Liu, W. and Schlesser, R. and Davis, R. F. and Prater, J. T. and Sitar, Z.}, year={1998}, pages={1120–1123} }
 @article{ward_nam_hartman_english_mccarson_schlesser_sitar_davis_nemanich_1998, title={Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy}, volume={84}, DOI={10.1063/1.368775}, number={9}, journal={Journal of Applied Physics}, author={Ward, B. L. and Nam, O. H. and Hartman, J. D. and English, S. L. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Nemanich, R. J.}, year={1998}, pages={5238–5242} }
 @article{mccarson_schlesser_mcclure_sitar_1998, title={Electron emission mechanism from cubic boron nitride-coated molybdenum emitters}, volume={72}, DOI={10.1063/1.121492}, number={22}, journal={Applied Physics Letters}, author={McCarson, B. L. and Schlesser, R. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={2909–2911} }
 @article{choi_schlesser_wojak_cuomo_sitar_hren_1998, title={Electron energy distribution of diamond-coated field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Choi, W. B. and Schlesser, R. and Wojak, G. and Cuomo, J. J. and Sitar, Z. and Hren, J. J.}, year={1998}, month={Mar}, pages={716–719} }
 @article{mccarson_schlesser_sitar_1998, title={Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior}, volume={84}, DOI={10.1063/1.368496}, number={6}, journal={Journal of Applied Physics}, author={McCarson, B. L. and Schlesser, R. and Sitar, Z.}, year={1998}, pages={3382–3385} }
 @article{schlesser_mccarson_mcclure_sitar_1998, title={Field emission energy distribution analysis of wide-band-gap field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Schlesser, R. and McCarson, B. L. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={689–692} }
 @article{wolden_davis_sitar_prater_1998, title={Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications}, volume={7}, DOI={10.1016/S0925-9635(97)00206-9}, number={2-5}, journal={Diamond and Related Materials}, author={Wolden, C. A. and Davis, R. F. and Sitar, Z. and Prater, J. T.}, year={1998}, pages={133–138} }
 @article{sitar_liu_yang_wolden_schlesser_prater_1998, title={Heteroepitaxial nucleation of diamond on nickel}, volume={7}, DOI={10.1016/S0925-9635(97)00244-6}, number={2-5}, journal={Diamond and Related Materials}, author={Sitar, Z. and Liu, W. and Yang, P. C. and Wolden, C. A. and Schlesser, R. and Prater, J. T.}, year={1998}, pages={276–282} }
 @article{schlesser_mcclure_mccarson_sitar_1998, title={Mechanisms of field emission from diamond coated Mo emitters}, volume={7}, DOI={10.1016/S0925-9635(97)00290-2}, number={2-5}, journal={Diamond and Related Materials}, author={Schlesser, R. and McClure, M. T. and McCarson, B. L. and Sitar, Z.}, year={1998}, pages={636–639} }
 @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, DOI={10.1063/1.368752}, number={9}, journal={Journal of Applied Physics}, author={Ronning, C. and Banks, A. D. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Ward, B. L. and Nemanich, R. J.}, year={1998}, pages={5046–5051} }
 @article{yang_liu_schlesser_wolden_davis_prater_sitar_1998, title={Surface melting in the heteroepitaxial nucleation of diamond on Ni}, volume={187}, DOI={10.1016/S0022-0248(97)00854-3}, number={1}, journal={Journal of Crystal Growth}, author={Yang, P. C. and Liu, W. and Schlesser, R. and Wolden, C. A. and Davis, R. F. and Prater, J. T. and Sitar, Z}, year={1998}, pages={81–88} }
 @article{wolden_draper_sitar_prater_1998, title={The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond}, volume={7}, DOI={10.1016/S0925-9635(98)00172-1}, number={8}, journal={Diamond and Related Materials}, author={Wolden, C. A. and Draper, C. E. and Sitar, Z. and Prater, J. T.}, year={1998}, pages={1178–1183} }
 @article{liu_yang_wolden_davis_prater_sitar_1998, title={Transmission electron microscoanalysis of the oriented diamond growth on nickel substrates}, volume={83}, DOI={10.1063/1.367885}, number={12}, journal={Journal of Applied Physics}, author={Liu, W. and Yang, P. C. and Wolden, C. A. and Davis, R. F. and Prater, J. T. and Sitar, Z.}, year={1998}, pages={7658–7663} }
 @article{yang_schlesser_wolden_liu_davis_sitar_prater_1997, title={Control of diamond heteroepitaxy on nickel by optical reflectance}, volume={70}, DOI={10.1063/1.118756}, number={22}, journal={Applied Physics Letters}, author={Yang, P. C. and Schlesser, R. and Wolden, C. A. and Liu, W. and Davis, R. F. and Sitar, Z. and Prater, J. T.}, year={1997}, pages={2960–2962} }
 @article{tao_gitmans_sitar_pierhofer_kundig_gamboni_gunter_1997, title={Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy}, volume={201}, DOI={10.1080/00150199708228374}, number={1-4}, journal={Ferroelectrics}, author={Tao, Y. and Gitmans, F. and Sitar, Z. and Pierhofer, H. and Kundig, A. and Gamboni, I. and Gunter, P.}, year={1997}, pages={245–253} }
 @article{mcclure_schlesser_mccarson_sitar_1997, title={Electrical characterization of diamond and graphite coated Mo field emitters}, volume={15}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={McClure, M. T. and Schlesser, R. and McCarson, B. L. and Sitar, Z.}, year={1997}, pages={2067–2071} }
 @article{schlesser_mcclure_choi_hren_sitar_1997, title={Energy distribution of field emitted electrons from diamond coated molybdenum tips}, volume={70}, DOI={10.1063/1.118626}, number={12}, journal={Applied Physics Letters}, author={Schlesser, R. and McClure, M. T. and Choi, W. B. and Hren, J. J. and Sitar, Z.}, year={1997}, pages={1596–1598} }
 @article{davis_paisley_sitar_kester_ailey_linthicum_rowland_tanaka_kern_1997, title={Gas-source molecular beam epitaxy of III-V nitrides}, volume={178}, DOI={10.1016/S0022-0248(97)00077-8}, number={1/2}, journal={Journal of Crystal Growth}, author={Davis, R. F. and Paisley, M. J. and Sitar, Z. and Kester, D. J. and Ailey, K. S. and Linthicum, K. and Rowland, L. B. and Tanaka, S. and Kern, R. S.}, year={1997}, pages={87–101} }
 @article{davis_1997, title={Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization}, volume={41}, DOI={10.1016/S0038-1101(96)00152-9}, number={2}, journal={Solid-state Electronics}, author={Davis, R. F.}, year={1997}, pages={129–134} }
 @article{wolden_han_mcclure_sitar_prater_1997, title={Highly oriented diamond deposited using a low pressure flat flame}, volume={32}, DOI={10.1016/S0167-577X(97)00003-7}, number={1}, journal={Materials Letters}, author={Wolden, C. A. and Han, S.-K. and McClure, M. T. and Sitar, Z. and Prater, J. T.}, year={1997}, pages={9–12} }
 @article{wolden_davis_sitar_prater_1997, title={In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame}, volume={12}, DOI={10.1557/JMR.1997.0364}, number={10}, journal={Journal of Materials Research}, author={Wolden, C. A. and Davis, R. F. and Sitar, Zlatko and Prater, J. T.}, year={1997}, pages={2733–2742} }
 @article{wolden_davis_sitar_prater_1997, title={Low-temperature deposition of optically transparent diamond using a low-pressure flat flame}, volume={6}, DOI={10.1016/S0925-9635(97)00155-6}, number={12}, journal={Diamond and Related Materials}, author={Wolden, C. A. and Davis, R. F. and Sitar, Z. and Prater, J. T.}, year={1997}, pages={1862–1867} }
 @article{shmagin_muth_lee_kolbas_balkas_sitar_davis_1997, title={Optical metastability in bulk GaN single crystals}, volume={71}, DOI={10.1063/1.119577}, number={4}, journal={Applied Physics Letters}, author={Shmagin, I. K. and Muth, J. F. and Lee, J. H. and Kolbas, R. M. and Balkas, C. M. and Sitar, Z. and Davis, R. F.}, year={1997}, pages={455–457} }
 @article{shen_shmagin_koch_kolbas_fahmy_bergman_nemanich_mcclure_sitar_quan_1997, title={Photoluminescence from mechanically milled Si and SiO(2) powders}, volume={55}, DOI={10.1103/physrevb.55.7615}, number={12}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Shen, T. D. and Shmagin, I. K. and Koch, C. C. and Kolbas, R. M. and Fahmy, Y. and Bergman, L. and Nemanich, R. J. and McClure, M. T. and Sitar, Z. and Quan, M. X}, year={1997}, pages={7615–7623} }
 @article{balkas_sitar_zheleva_bergman_nemanich_davis_1997, title={Sublimation growth and characterization of bulk aluminum nitride single crystals}, volume={179}, DOI={10.1016/S0022-0248(97)00160-7}, number={3-4}, journal={Journal of Crystal Growth}, author={Balkas, C. M. and Sitar, Z. and Zheleva, T. S. and Bergman, L. and Nemanich, R. J. and Davis, R. F.}, year={1997}, pages={363–370} }
 @inproceedings{balkas_sitar_zheleva_bergman_shmagin_muth_kolbas_nemanich_davis_1996, title={Growth of bulk AIN and GaN single crystals by sublimation}, booktitle={III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Balkas, C. M. and Sitar, Z. and Zheleva, T. and Bergman, L. and Shmagin, I. K. and Muth, J. F. and Kolbas, R. M. and Nemanich, R. and Davis, R. F.}, year={1996}, pages={41–46} }
 @article{paisley_sitar_posthill_davis_1989, title={Growth of cubic phase gallium nitride by modified molecular-beam epitaxy}, volume={7}, DOI={10.1116/1.575869}, number={3}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Paisley, M. J. and Sitar, Z. and Posthill, J. B. and Davis, R. F.}, year={1989}, pages={701–705} }
 @inproceedings{hoffmann_gerhold_kirste_rice_akouala_xie_mita_collazo_sitar, title={Fabrication and characterization of lateral polar GaN structures for second harmonic generation}, volume={8631}, booktitle={Quantum sensing and nanophotonic devices x}, author={Hoffmann, M. P. and Gerhold, M. and Kirste, R. and Rice, A. and Akouala, C. R. and Xie, J. Q. Q. and Mita, S. and Collazo, R. and Sitar, Z.} }
 @article{collazo_schlesser_sitar, title={Field emission from carbon nanotubes}, volume={13}, number={5}, journal={New Diamond and Frontier Carbon Technology}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, pages={297–306} }
 @article{guo_kirste_bryan_bryan_gerhold_collazo_sitar, title={Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes}, volume={117}, number={11}, journal={Journal of Applied Physics}, author={Guo, W. and Kirste, R. and Bryan, Z. and Bryan, I. and Gerhold, M. and Collazo, R. and Sitar, Z.} }
 @inproceedings{alden_bryan_gaddy_bryan_callsen_koukitu_kumagai_hoffmann_irving_sitar_et al., title={On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates}, volume={72}, number={5}, booktitle={Wide bandgap semiconductor materials and devices 17}, author={Alden, D. and Bryan, Z. and Gaddy, B. E. and Bryan, I. and Callsen, G. and Koukitu, A. and Kumagai, Y. and Hoffmann, A. and Irving, D. L. and Sitar, Z. and et al.}, pages={31–40} }
 @misc{tsao_chowdhury_hollis_jena_johnson_jones_kaplar_rajan_walle_bellotti_et al., title={Ultrawide-bandgap semiconductors: Research opportunities and challenges}, volume={4}, number={1}, journal={Advanced Electronic Materials}, author={Tsao, J. Y. and Chowdhury, S. and Hollis, M. A. and Jena, D. and Johnson, N. M. and Jones, K. A. and Kaplar, R. J. and Rajan, S. and Walle, C. G. and Bellotti, E. and et al.} }