@article{wang_kirste_mita_washiyama_mecouch_reddy_collazo_sitar_2022, title={

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

}, DOI={10.1063/5.0077628}, journal={APPLIED PHYSICS LETTERS}, author={Wang, Ke and Kirste, Ronny and Mita, Seiji and Washiyama, Shun and Mecouch, Will and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={Jan} } @article{szymanski_khachariya_eldred_bagheri_washiyama_chang_pavlidis_kirste_reddy_kohn_et al._2022, title={GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions}, DOI={10.1063/5.0076044}, journal={JOURNAL OF APPLIED PHYSICS}, author={Szymanski, Dennis and Khachariya, Dolar and Eldred, Tim B. and Bagheri, Pegah and Washiyama, Shun and Chang, Alexander and Pavlidis, Spyridon and Kirste, Ronny and Reddy, Pramod and Kohn, Erhard and et al.}, year={2022}, month={Jan} } @article{reddy_mecouch_breckenridge_khachariya_bagheri_kim_guan_mita_moody_tweedie_et al._2022, title={Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates}, DOI={10.1002/pssr.202100619}, journal={PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS}, author={Reddy, Pramod and Mecouch, Will and Breckenridge, M. Hayden and Khachariya, Dolar and Bagheri, Pegah and Kim, Ji Hyun and Guan, Yan and Mita, Seiji and Moody, Baxter and Tweedie, James and et al.}, year={2022}, month={Mar} } @article{jadhav_bagheri_klump_khachariya_mita_reddy_rathkanthiwar_kirste_collazo_sitar_et al._2022, title={On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters}, DOI={10.1088/1361-6641/ac3710}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Jadhav, Aakash and Bagheri, Pegah and Klump, Andrew and Khachariya, Dolar and Mita, Seiji and Reddy, Pramod and Rathkanthiwar, Shashwat and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko and et al.}, year={2022}, month={Jan} } @article{rathkanthiwar_bagheri_khachariya_mita_pavlidis_reddy_kirste_tweedie_sitar_collazo_2022, title={Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices}, DOI={10.35848/1882-0786/ac6566}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Mita, Seiji and Pavlidis, Spyridon and Reddy, Pramod and Kirste, Ronny and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2022}, month={May} } @article{bagheri_kim_washiyama_reddy_klump_kirste_mita_collazo_sitar_2021, title={A pathway to highly conducting Ge-doped AlGaN}, DOI={10.1063/5.0071791}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Kim, Ji Hyun and Washiyama, Shun and Reddy, Pramod and Klump, Andrew and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Nov} } @article{breckenridge_tweedie_reddy_guan_bagheri_szymanski_mita_sierakowski_bockowski_collazo_et al._2021, title={High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0038628}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Guan, Yan and Bagheri, Pegah and Szymanski, Dennis and Mita, Seiji and Sierakowski, Kacper and Bockowski, Michal and Collazo, Ramon and et al.}, year={2021} } @article{breckenridge_bagheri_guo_sarkar_khachariya_pavlidis_tweedie_kirste_mita_reddy_et al._2021, title={High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0042857}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Breckenridge, M. Hayden and Bagheri, Pegah and Guo, Qiang and Sarkar, Biplab and Khachariya, Dolar and Pavlidis, Spyridon and Tweedie, James and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and et al.}, year={2021} } @article{mirrielees_dycus_baker_reddy_collazo_sitar_lebeau_irving_2021, title={Native oxide reconstructions on AlN and GaN (0001) surfaces}, DOI={10.1063/5.0048820}, journal={JOURNAL OF APPLIED PHYSICS}, author={Mirrielees, Kelsey J. and Dycus, J. Houston and Baker, Jonathon N. and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko and LeBeau, James M. and Irving, Douglas L.}, year={2021}, month={May} } @article{bagheri_reddy_mita_szymanski_kim_guan_khachariya_klump_pavlidis_kirste_et al._2021, title={On the Ge shallow-to-deep level transition in Al-rich AlGaN}, DOI={10.1063/5.0059037}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Reddy, Pramod and Mita, Seiji and Szymanski, Dennis and Kim, Ji Hyun and Guan, Yan and Khachariya, Dolar and Klump, Andrew and Pavlidis, Spyridon and Kirste, Ronny and et al.}, year={2021}, month={Aug} } @article{khachariya_szymanski_breckenridge_reddy_kohn_sitar_collazo_pavlidis_2021, title={On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0039888}, number={12}, journal={APPLIED PHYSICS LETTERS}, author={Khachariya, Dolar and Szymanski, Dennis and Breckenridge, M. Hayden and Reddy, Pramod and Kohn, Erhard and Sitar, Zlatko and Collazo, Ramon and Pavlidis, Spyridon}, year={2021} } @article{cancellara_markurt_schulz_albrecht_hagedorn_walde_weyers_washiyama_collazo_sitar_2021, title={Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing}, DOI={10.1063/5.0065935}, journal={JOURNAL OF APPLIED PHYSICS}, author={Cancellara, Leonardo and Markurt, Toni and Schulz, Tobias and Albrecht, Martin and Hagedorn, Sylvia and Walde, Sebastian and Weyers, Markus and Washiyama, Shun and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Nov} } @article{washiyama_mirrielees_bagheri_baker_kim_guo_kirste_guan_breckenridge_klump_et al._2021, title={Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0035957}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Washiyama, Shun and Mirrielees, Kelsey J. and Bagheri, Pegah and Baker, Jonathon N. and Kim, Ji-Hyun and Guo, Qiang and Kirste, Ronny and Guan, Yan and Breckenridge, M. Hayden and Klump, Andrew J. and et al.}, year={2021} } @article{kirste_sarkar_reddy_guo_collazo_sitar_2021, title={Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength}, DOI={10.1557/s43578-021-00443-8}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kirste, Ronny and Sarkar, Biplab and Reddy, Pramod and Guo, Qiang and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Dec} } @article{gacevic_grandal_guo_kirste_varela_sitar_sanchez garcia_2021, title={Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy}, volume={32}, ISBN={1361-6528}, DOI={10.1088/1361-6528/abe2c7}, number={19}, journal={NANOTECHNOLOGY}, author={Gacevic, Z. and Grandal, J. and Guo, Q. and Kirste, R. and Varela, M. and Sitar, Z. and Sanchez Garcia, M. A.}, year={2021} } @article{reddy_khachariya_mecouch_breckenridge_bagheri_guan_kim_pavlidis_kirste_mita_et al._2021, title={Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN}, DOI={10.1063/5.0062831}, journal={APPLIED PHYSICS LETTERS}, author={Reddy, Pramod and Khachariya, Dolar and Mecouch, Will and Breckenridge, M. Hayden and Bagheri, Pegah and Guan, Yan and Kim, Ji Hyun and Pavlidis, Spyridon and Kirste, Ronny and Mita, Seiji and et al.}, year={2021}, month={Nov} } @article{kim_bagheri_washiyama_klump_kirste_mita_reddy_collazo_sitar_2021, title={Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies}, DOI={10.1063/5.0055409}, journal={APPLIED PHYSICS LETTERS}, author={Kim, Ji Hyun and Bagheri, Pegah and Washiyama, Shun and Klump, Andrew and Kirste, Ronny and Mita, Seiji and Reddy, Pramod and Collazo, Ramon and Sitar, Zlatko}, year={2021}, month={Jul} } @article{al-tawhid_shafe_bagheri_guan_reddy_mita_moody_collazo_sitar_ahadi_2021, title={Weak localization and dimensional crossover in compositionally graded AlxGa1-xN}, volume={118}, ISBN={1077-3118}, DOI={10.1063/5.0042098}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Al-Tawhid, Athby and Shafe, Abdullah-Al and Bagheri, Pegah and Guan, Yan and Reddy, Pramod and Mita, Seiji and Moody, Baxter and Collazo, Ramon and Sitar, Zlatko and Ahadi, Kaveh}, year={2021} } @article{hauwiller_stowe_eldred_mita_collazo_sitar_lebeau_2020, title={Cathodoluminescence of silicon doped aluminum nitride with scanning transmission electron microscopy}, volume={8}, ISBN={2166-532X}, DOI={10.1063/5.0019863}, number={9}, journal={APL MATERIALS}, author={Hauwiller, Matthew R. and Stowe, David and Eldred, Timothy B. and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko and LeBeau, James}, year={2020} } @article{baker_bowes_harris_collazo_sitar_irving_2020, title={Complexes and compensation in degenerately donor doped GaN}, volume={117}, ISBN={1077-3118}, DOI={10.1063/5.0013988}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Baker, Jonathon N. and Bowes, Preston C. and Harris, Joshua S. and Collazo, Ramon and Sitar, Zlatko and Irving, Douglas L.}, year={2020} } @article{yamamoto_takekawa_goto_nagashima_dalmau_schlesser_murakami_collazo_monemar_sitar_et al._2020, title={Hydride vapor phase epitaxy of Si -doped AlN layers using SiCl 4 as a doping gas}, volume={545}, ISBN={1873-5002}, DOI={10.1016/j.jcrysgro.2020.125730}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yamamoto, Reo and Takekawa, Nao and Goto, Ken and Nagashima, Toru and Dalmau, Rafael and Schlesser, Raoul and Murakami, Hisashi and Collazo, Ramon and Monemar, Bo and Sitar, Zlatko and et al.}, year={2020} } @article{washiyama_guan_mita_collazo_sitar_2020, title={Recovery kinetics in high temperature annealed AlN heteroepitaxial films}, volume={127}, ISBN={1089-7550}, DOI={10.1063/5.0002891}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washiyama, Shun and Guan, Yan and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2020} } @article{wang_huynh_liao_yu_bai_tweedie_breckenridge_collazo_sitar_bockowski_et al._2020, title={Strain Recovery and Defect Characterization in Mg-Implanted Homoepitaxial GaN on High-Quality GaN Substrates}, ISBN={1521-3951}, DOI={10.1002/pssb.201900705}, journal={PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS}, author={Wang, Yekan and Huynh, Kenny and Liao, Michael E. and Yu, Hsuan-Ming and Bai, Tingyu and Tweedie, James and Breckenridge, Mathew Hayden and Collazo, Ramon and Sitar, Zlatko and Bockowski, Michal and et al.}, year={2020} } @article{goto_takekawa_nagashima_yamamoto_pozina_dalmau_schlesser_collazo_monemar_sitar_et al._2020, title={Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers}, ISBN={1862-6319}, DOI={10.1002/pssa.202000465}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, author={Goto, Ken and Takekawa, Nao and Nagashima, Toru and Yamamoto, Reo and Pozina, Galia and Dalmau, Rafael and Schlesser, Raoul and Collazo, Ramon and Monemar, Bo and Sitar, Zlatko and et al.}, year={2020} } @article{amano_collazo_santi_einfeldt_funato_glaab_hagedorn_hirano_hirayama_ishii_et al._2020, title={The 2020 UV emitter roadmap}, volume={53}, ISBN={1361-6463}, DOI={10.1088/1361-6463/aba64c}, number={50}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, author={Amano, Hiroshi and Collazo, Ramon and Santi, Carlo De and Einfeldt, Sven and Funato, Mitsuru and Glaab, Johannes and Hagedorn, Sylvia and Hirano, Akira and Hirayama, Hideki and Ishii, Ryota and et al.}, year={2020} } @article{chichibu_kojima_hazu_ishikawa_furusawa_mita_collazo_sitar_uedono_2019, title={In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film}, volume={115}, ISBN={1077-3118}, DOI={10.1063/1.5116900}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Chichibu, S. F. and Kojima, K. and Hazu, K. and Ishikawa, Y. and Furusawa, K. and Mita, S. and Collazo, R. and Sitar, Z. and Uedono, A.}, year={2019} } @article{liu_nitta_robin_kushimoto_deki_honda_pristovsek_sitar_amano_2019, title={Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)}, volume={514}, ISBN={1873-5002}, DOI={10.1016/j.jcrysgro.2019.02.058}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Liu, Zhibin and Nitta, Shugo and Robin, Yoann and Kushimoto, Maki and Deki, Manato and Honda, Yoshio and Pristovsek, Markus and Sitar, Zlatko and Amano, Hiroshi}, year={2019}, pages={13–13} } @article{kelley_runnerstrom_sachet_shelton_grimley_klump_lebeau_sitar_suen_padilla_et al._2019, title={Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials}, volume={6}, ISBN={2330-4022}, DOI={10.1021/acsphotonics.9b00367}, number={5}, journal={ACS PHOTONICS}, author={Kelley, Kyle P. and Runnerstrom, Evan L. and Sachet, Edward and Shelton, Christopher T. and Grimley, Everett D. and Klump, Andrew and LeBeau, James M. and Sitar, Zlatko and Suen, Jonathan Y. and Padilla, Willie J. and et al.}, year={2019}, month={May}, pages={1139–1145} } @article{harris_gaddy_collazo_sitar_irving_2019, title={Oxygen and silicon point defects in Al0.65Ga0.35N}, volume={3}, ISBN={2475-9953}, DOI={10.1103/PhysRevMaterials.3.054604}, number={5}, journal={PHYSICAL REVIEW MATERIALS}, author={Harris, Joshua S. and Gaddy, Benjamin E. and Collazo, Ramon and Sitar, Zlatko and Irving, Douglas L.}, year={2019} } @article{alden_troha_kirste_mita_guo_hoffmann_zgonik_collazo_sitar_2019, title={Quasi-phase-matched second harmonic generation of UV light using AlN waveguides}, volume={114}, ISBN={1077-3118}, DOI={10.1063/1.5087058}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Alden, Dorian and Troha, Tinkara and Kirste, Ronny and Mita, Seiji and Guo, Qiang and Hoffmann, Axel and Zgonik, Marko and Collazo, Ramon and Sitar, Zlatko}, year={2019} } @article{graziano_bryan_bryan_kirste_tweedie_collazo_sitar_2019, title={Structural characteristics of m-plane AlN substrates and homoepitaxial films}, volume={507}, DOI={10.1016/j.jcrysgro.2018.07.012}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Graziano, Milena Bobea and Bryan, Isaac and Bryan, Zachary and Kirste, Ronny and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2019}, pages={389–394} } @article{guo_kirste_mita_tweedie_reddy_washiyama_breckenridge_collazo_sitar_2019, title={The polarization field in Al-rich AlGaN multiple quantum wells}, volume={58}, ISBN={1347-4065}, DOI={10.7567/1347-4065/ab07a9}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, author={Guo, Qiang and Kirste, Ronny and Mita, Seiji and Tweedie, James and Reddy, Pramod and Washiyama, Shun and Breckenridge, M. Hayden and Collazo, Ramon and Sitar, Zlatko}, year={2019} } @article{dycus_washiyama_eldred_guan_kirste_mita_sitar_collazo_lebeau_2019, title={The role of transient surface morphology on composition control in AlGaN layers and wells}, volume={114}, DOI={10.1063/1.5063933}, number={3}, journal={APPLIED PHYSICS LETTERS}, author={Dycus, J. Houston and Washiyama, Shun and Eldred, Tim B. and Guan, Yan and Kirste, Ronny and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon and LeBeau, James M.}, year={2019} } @article{washiyama_reddy_kaess_kirste_mita_collazo_sitar_2018, title={A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition}, volume={124}, DOI={10.1063/1.5045058}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Washiyama, Shun and Reddy, Pramod and Kaess, Felix and Kirste, Ronny and Mita, Seiji and Collazo, Ramon and Sitar, Zlatko}, year={2018} } @article{bryan_bryan_washiyama_reddy_gaddy_sarkar_breckenridge_guo_bobea_tweedie_et al._2018, title={Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD}, volume={112}, DOI={10.1063/1.5011984}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Bryan, Z. and Washiyama, S. and Reddy, P. and Gaddy, B. and Sarkar, B. and Breckenridge, M. 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B. and Mita, S. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2018} } @article{sarkar_reddy_klump_kaess_rounds_kirste_mita_kohn_collazo_sitar_2018, title={On Ni/Au Alloyed Contacts to Mg-Doped GaN}, volume={47}, ISSN={0361-5235 1543-186X}, url={http://dx.doi.org/10.1007/S11664-017-5775-3}, DOI={10.1007/S11664-017-5775-3}, number={1}, journal={Journal of Electronic Materials}, publisher={Springer Nature}, author={Sarkar, Biplab and Reddy, Pramod and Klump, Andrew and Kaess, Felix and Rounds, Robert and Kirste, Ronny and Mita, Seiji and Kohn, Erhard and Collazo, Ramon and Sitar, Zlatko}, year={2018}, month={Jan}, pages={305–311} } @article{harris_baker_gaddy_bryan_bryan_mirrielees_reddy_collazo_sitar_irving_2018, title={On compensation in Si-doped AlN}, volume={112}, DOI={10.1063/1.5022794}, number={15}, journal={Applied Physics Letters}, author={Harris, J. S. and Baker, J. N. and Gaddy, B. E. and Bryan, I. and Bryan, Z. and Mirrielees, K. J. and Reddy, P. and Collazo, R. and Sitar, Z. and Irving, D. L.}, year={2018} } @article{reddy_washiyama_mecouch_hernandez-balderrama_kaess_breckenridge_sarkar_haidet_franke_kohn_et al._2018, title={Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition}, volume={36}, DOI={10.1116/1.5050501}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Reddy, Pramod and Washiyama, Shun and Mecouch, Will and Hernandez-Balderrama, Luis H. and Kaess, Felix and Breckenridge, M. Hayden and Sarkar, Biplab and Haidet, Brian B. and Franke, Alexander and Kohn, Erhard and et al.}, year={2018} } @article{alden_harris_bryan_baker_reddy_mita_callsen_hoffmann_irving_collazo_et al._2018, title={Point-defect nature of the ultraviolet absorption band in AIN}, volume={9}, DOI={10.1103/physrevapplied.9.054036}, number={5}, journal={Physical Review Applied}, author={Alden, D. and Harris, J. S. and Bryan, Z. and Baker, J. N. and Reddy, P. and Mita, S. and Callsen, G. and Hoffmann, A. and Irving, D. L. and Collazo, R. and et al.}, year={2018} } @article{dhall_vigil-fowler_dycus_kirste_mita_sitar_collazo_lebeau_2018, title={Probing collective oscillation of d-orbital electrons at the nanoscale}, volume={112}, DOI={10.1063/1.5012742}, number={6}, journal={Applied Physics Letters}, author={Dhall, R. and Vigil-Fowler, D. and Dycus, J. H. and Kirste, R. and Mita, S. and Sitar, Z. and Collazo, R. and LeBeau, J. M.}, year={2018} } @article{dycus_mirrielees_grimley_kirste_mita_sitar_collazo_irving_lebeau_2018, title={Structure of ultrathin native oxides on III-nitride surfaces}, volume={10}, DOI={10.1021/acsami.8b00845}, number={13}, journal={ACS Applied Materials & Interfaces}, author={Dycus, J. H. and Mirrielees, K. J. and Grimley, E. D. and Kirste, R. and Mita, S. and Sitar, Z. and Collazo, R. and Irving, D. L. and LeBeau, J. 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B. and Tweedie, J. and Mita, S. and Kirste, R. and Kohn, E. and Collazo, R. and Sitar, Z.}, year={2017}, pages={29–36} } @article{lamprecht_jmerik_collazo_sitar_ivanov_thonke_2017, title={Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN}, volume={254}, DOI={10.1002/pssb.201600714}, number={8}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Lamprecht, M. and Jmerik, V. N. and Collazo, R. and Sitar, Z. and Ivanov, S. V. and Thonke, K.}, year={2017} } @article{haidet_sarkar_reddy_bryan_bryan_kirste_collazo_sitar_2017, title={Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN}, volume={56}, DOI={10.7567/jjap.56.100302}, number={10}, journal={Japanese Journal of Applied Physics}, author={Haidet, B. B. and Sarkar, B. and Reddy, P. and Bryan, I. and Bryan, Z. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2017} } @article{majkic_franke_kirste_schlesser_collazo_sitar_zgonik_2017, title={Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals}, volume={254}, DOI={10.1002/pssb.201700077}, number={9}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Majkic, A. and Franke, A. and Kirste, R. and Schlesser, R. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2017} } @article{thonke_lamprecht_collazo_sitar_2017, title={Optical signatures of silicon and oxygen related DX centers in AlN}, volume={214}, DOI={10.1002/pssa.201600749}, number={9}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Thonke, K. and Lamprecht, M. and Collazo, R. and Sitar, Z.}, year={2017} } @article{sarkar_haidet_reddy_kirste_collazo_sitar_2017, title={Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment}, volume={10}, DOI={10.7567/apex.10.071001}, number={7}, journal={Applied Physics Express}, author={Sarkar, B. and Haidet, B. B. and Reddy, P. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2017} } @article{reddy_washiyama_kaess_kirste_mita_collazo_sitar_2017, title={Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN}, volume={122}, DOI={10.1063/1.5002682}, number={24}, journal={Journal of Applied Physics}, author={Reddy, P. and Washiyama, S. and Kaess, F. and Kirste, R. and Mita, S. and Collazo, R. and Sitar, Z.}, year={2017} } @article{lamprecht_grund_bauer_collazo_sitar_thonke_2017, title={Slow decay of a defect-related emission band at 2.05eV in AlN: Signatures of oxygen-related DX states}, volume={254}, DOI={10.1002/pssb.201600338}, number={5}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Lamprecht, M. and Grund, C. and Bauer, S. and Collazo, R. and Sitar, Z. and Thonke, K.}, year={2017} } @article{shelton_bryan_paisley_sachet_ihlefeld_lavrik_collazo_sitar_maria_2017, title={Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy}, volume={5}, DOI={10.1063/1.4993840}, number={9}, journal={APL Materials}, author={Shelton, C. T. and Bryan, I. and Paisley, E. A. and Sachet, E. and Ihlefeld, J. F. and Lavrik, N. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2017} } @article{dycus_mirrielees_grimley_dhall_kirste_mita_sitar_collazo_irving_lebeau_2017, title={Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS}, volume={23}, ISSN={1431-9276 1435-8115}, url={http://dx.doi.org/10.1017/S1431927617007887}, DOI={10.1017/S1431927617007887}, number={S1}, journal={Microscopy and Microanalysis}, publisher={Cambridge University Press (CUP)}, author={Dycus, J. 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B. and Alden, D. and Franke, A. and Sarkar, B. and Kohn, E. and et al.}, year={2016} } @article{tojo_yamamoto_tanaka_thieu_togashi_nagashima_kinoshita_dalmau_schlesser_murakami_et al._2016, title={Influence of high-temperature processing on the surface properties of bulk AlN substrates}, volume={446}, DOI={10.1016/j.jcrysgro.2016.04.030}, journal={Journal of Crystal Growth}, author={Tojo, S. and Yamamoto, R. and Tanaka, R. and Thieu, Q. T. and Togashi, R. and Nagashima, T. and Kinoshita, T. and Dalmau, R. and Schlesser, R. and Murakami, H. and et al.}, year={2016}, pages={33–38} } @article{reddy_hoffmann_kaess_bryan_bryan_bobea_klump_tweedie_kirste_mita_et al._2016, title={Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control}, volume={120}, DOI={10.1063/1.4967397}, number={18}, journal={Journal of Applied Physics}, author={Reddy, P. and Hoffmann, M. 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A, Applications and Materials Science}, author={Hoffmann, M. P. and Kirste, R. and Mita, S. and Guo, W. and Tweedie, J. and Bobea, M. and Bryan, I. and Bryan, Z. and Gerhold, M. and Collazo, R. and et al.}, year={2015}, pages={1039–1042} } @article{bryan_bryan_xie_mita_sitar_collazo_2015, title={High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates}, volume={106}, DOI={10.1063/1.4917540}, number={14}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Xie, J. 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P. and Kirste, R. and Bobea, M. and Mita, S. and Gerhold, M. D. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2015} } @article{majkic_puc_franke_kirste_collazo_sitar_zgonik_2015, title={Optical properties of aluminum nitride single crystals in the THz region}, volume={5}, DOI={10.1364/ome.5.002106}, number={10}, journal={Optical Materials Express}, author={Majkic, A. and Puc, U. and Franke, A. and Kirste, R. and Collazo, R. and Sitar, Z. and Zgonik, M.}, year={2015}, pages={2106–2111} } @article{bryan_bryan_mita_tweedie_sitar_collazo_2015, title={Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates}, volume={106}, DOI={10.1063/1.4922385}, number={23}, journal={Applied Physics Letters}, author={Bryan, Z. and Bryan, I. and Mita, S. and Tweedie, J. and Sitar, Z. and Collazo, R.}, year={2015} } @article{zhou_raghothamachar_wu_dalmau_moody_craft_schlesser_dudley_sitar_2014, title={Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation}, volume={43}, DOI={10.1007/s11664-013-2968-2}, number={4}, journal={Journal of Electronic Materials}, author={Zhou, T. 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E. and Reddy, P. and Hussey, L. and Bobea, M. and Guo, W. and Hoffmann, M. and Kirste, R. and Tweedie, J. and et al.}, year={2014} } @article{sochacki_bryan_amilusik_bobea_fijalkowski_bryan_lucznik_collazo_weyher_kucharski_et al._2014, title={HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties}, volume={394}, DOI={10.1016/j.jcrysgro.2014.02.020}, journal={Journal of Crystal Growth}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Bobea, M. and Fijalkowski, M. and Bryan, I. and Lucznik, B. and Collazo, R. and Weyher, J. 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R. and Dalmau, R. F. and et al.}, year={2014} } @article{shelton_sachet_paisley_hoffmann_rajan_collazo_sitar_maria_2014, title={Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures}, volume={115}, DOI={10.1063/1.4863120}, number={4}, journal={Journal of Applied Physics}, author={Shelton, C. T. and Sachet, E. and Paisley, E. A. and Hoffmann, M. P. and Rajan, J. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2014} } @inproceedings{kirste_mita_hoffmann_hussey_guo_bryan_bryan_tweedie_gerhold_hoffmann_et al._2014, title={Properties of AlN based lateral polarity structures}, volume={11}, DOI={10.1002/pssc.201300287}, number={2}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 2}, author={Kirste, R. and Mita, S. and Hoffmann, M. P. and Hussey, L. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Gerhold, M. and Hoffmann, A. and et al.}, year={2014}, pages={261–264} } @article{hussey_white_kirste_mita_bryan_guo_osterman_haidet_bryan_bobea_et al._2014, title={Sapphire decomposition and inversion domains in N-polar aluminum nitride}, volume={104}, DOI={10.1063/1.4862982}, number={3}, journal={Applied Physics Letters}, author={Hussey, L. and White, R. M. and Kirste, R. and Mita, S. and Bryan, I. and Guo, W. and Osterman, K. and Haidet, B. and Bryan, Z. and Bobea, M. and et al.}, year={2014} } @article{reddy_bryan_bryan_tweedie_kirste_collazo_sitar_2014, title={Schottky contact formation on polar and non-polar AlN}, volume={116}, DOI={10.1063/1.4901954}, number={19}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Tweedie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014} } @article{paisley_gaddy_lebeau_shelton_biegalski_christen_losego_mita_collazo_sitar_et al._2014, title={Smooth cubic commensurate oxides on gallium nitride}, volume={115}, DOI={10.1063/1.4861172}, number={6}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Gaddy, B. E. and LeBeau, J. M. and Shelton, C. T. and Biegalski, M. D. and Christen, H. M. and Losego, M. D. and Mita, S. and Collazo, R. and Sitar, Z. and et al.}, year={2014} } @article{guo_bryan_xie_kirste_mita_bryan_hussey_bobea_haidet_gerhold_et al._2014, title={Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates}, volume={115}, DOI={10.1063/1.4868678}, number={10}, journal={Journal of Applied Physics}, author={Guo, W. and Bryan, Z. and Xie, J. Q. and Kirste, R. and Mita, S. and Bryan, I. and Hussey, L. and Bobea, M. and Haidet, B. and Gerhold, M. and et al.}, year={2014} } @inproceedings{bryan_akouala_tweedie_bryan_rice_kirste_collazo_sitar_2014, title={Surface preparation of non-polar single-crystalline AlN substrates}, volume={11}, DOI={10.1002/pssc.201300401}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 11, no 3-4}, author={Bryan, I. and Akouala, C. R. and Tweedie, J. and Bryan, Z. and Rice, A. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2014}, pages={454–457} } @article{reddy_bryan_bryan_guo_hussey_collazo_sitar_2014, title={The effect of polarity and surface states on the Fermi level at III-nitride surfaces}, volume={116}, DOI={10.1063/1.4896377}, number={12}, journal={Journal of Applied Physics}, author={Reddy, P. and Bryan, I. and Bryan, Z. and Guo, W. and Hussey, L. and Collazo, R. and Sitar, Z.}, year={2014} } @article{gaddy_bryan_bryan_xie_dalmau_moody_kumagai_nagashima_kubota_kinoshita_et al._2014, title={The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN}, volume={104}, DOI={10.1063/1.4878657}, number={20}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and Kinoshita, T. and et al.}, year={2014} } @article{kuittinen_tuomisto_kumagai_nagashima_kinoshita_koukitu_collazo_sitar_2014, title={Vacancy defects in UV-transparent HVPE-AlN}, volume={11}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/PSSC.201300529}, DOI={10.1002/PSSC.201300529}, number={3-4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kuittinen, Tanja and Tuomisto, Filip and Kumagai, Yoshinao and Nagashima, Toru and Kinoshita, Toru and Koukitu, Akinori and Collazo, Ramón and Sitar, Zlatko}, year={2014}, month={Feb}, pages={405–407} } @article{foster_collazo_sitar_ivanisevic_2013, title={Aqueous stability of Ga- and N-polar gallium nitride}, volume={29}, DOI={10.1021/la304039n}, number={1}, journal={Langmuir}, author={Foster, C. M. and Collazo, R. and Sitar, Z. and Ivanisevic, A.}, year={2013}, pages={216–220} } @article{foster_collazo_sitar_ivanisevic_2013, title={Cell behavior on gallium nitride surfaces: Peptide affinity attachment versus covalent functionalization}, volume={29}, DOI={10.1021/la401503b}, number={26}, journal={Langmuir}, author={Foster, C. M. and Collazo, R. and Sitar, Z. and Ivanisevic, A.}, year={2013}, pages={8377–8384} } @article{guo_xie_akouala_mita_rice_tweedie_bryan_collazo_sitar_2013, title={Comparative study of etching high crystalline quality AlN and GaN}, volume={366}, DOI={10.1016/j.jcrysgro.2012.12.141}, journal={Journal of Crystal Growth}, author={Guo, W. and Xie, J. and Akouala, C. and Mita, S. and Rice, A. and Tweedie, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2013}, pages={20–25} } @article{kirste_hoffmann_tweedie_bryan_callsen_kure_nenstiel_wagner_collazo_hoffmann_et al._2013, title={Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements}, volume={113}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.4794094}, DOI={10.1063/1.4794094}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kirste, Ronny and Hoffmann, Marc P. and Tweedie, James and Bryan, Zachary and Callsen, Gordon and Kure, Thomas and Nenstiel, Christian and Wagner, Markus R. and Collazo, Ramón and Hoffmann, Axel and et al.}, year={2013}, month={Mar}, pages={103504} } @article{neuschl_thonke_feneberg_goldhahn_wunderer_yang_johnson_xie_mita_rice_et al._2013, title={Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions}, volume={103}, DOI={10.1063/1.4821183}, number={12}, journal={Applied Physics Letters}, author={Neuschl, B. and Thonke, K. and Feneberg, M. and Goldhahn, R. and Wunderer, T. and Yang, Z. and Johnson, N. M. and Xie, J. and Mita, S. and Rice, A. and et al.}, year={2013} } @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial PbxZr1-xTiO3 on GaN}, volume={113}, DOI={10.1063/1.4792599}, number={7}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2013} } @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Epitaxial lead zirconate titanate on gallium nitride (vol 113, 074107, 2013)}, volume={114}, number={23}, journal={Journal of Applied Physics}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J. P.}, year={2013} } @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4819200}, DOI={10.1063/1.4819200}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, Matthew S. and Bryan, Isaac and Sitar, Zlatko and Arellano, Consuelo and Xie, Jinqiao and Collazo, Ramon and Ivanisevic, Albena}, year={2013}, month={Aug}, pages={089902} } @article{chichibu_hazu_ishikawa_tashiro_ohtomo_furusawa_uedono_mita_xie_collazo_et al._2013, title={Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements}, volume={103}, DOI={10.1063/1.4823826}, number={14}, journal={Applied Physics Letters}, author={Chichibu, S. F. and Hazu, K. and Ishikawa, Y. and Tashiro, M. and Ohtomo, T. and Furusawa, K. and Uedono, A. and Mita, S. and Xie, J. and Collazo, R. and et al.}, year={2013} } @article{bryan_hoffmann_tweedie_kirste_callsen_bryan_rice_bobea_mita_xie_et al._2013, title={Fermi level control of point defects during growth of Mg-doped GaN}, volume={42}, DOI={10.1007/s11664-012-2342-9}, number={5}, journal={Journal of Electronic Materials}, author={Bryan, Z. and Hoffmann, M. and Tweedie, J. and Kirste, R. and Callsen, G. and Bryan, I. and Rice, A. and Bobea, M. and Mita, S. and Xie, J. Q. and et al.}, year={2013}, pages={815–819} } @article{kirste_hoffmann_sachet_bobea_bryan_bryan_nenstiel_hoffmann_maria_collazo_et al._2013, title={Ge doped GaN with controllable high carrier concentration for plasmonic applications}, volume={103}, DOI={10.1063/1.4848555}, number={24}, journal={Applied Physics Letters}, author={Kirste, R. and Hoffmann, M. P. and Sachet, E. and Bobea, M. and Bryan, Z. and Bryan, I. and Nenstiel, C. and Hoffmann, A. and Maria, J. P. and Collazo, R. and et al.}, year={2013} } @article{makowski_bryan_sitar_arellano_xie_collazo_ivanisevic_2013, title={Kinase detection with gallium nitride based high electron mobility transistors}, volume={103}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4812987}, DOI={10.1063/1.4812987}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, Matthew S. and Bryan, Isaac and Sitar, Zlatko and Arellano, Consuelo and Xie, Jinqiao and Collazo, Ramon and Ivanisevic, Albena}, year={2013}, month={Jul}, pages={013701} } @article{xie_mita_bryan_guo_hussey_moody_schlesser_kirste_gerhold_collazo_et al._2013, title={Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures}, volume={102}, DOI={10.1063/1.4803689}, number={17}, journal={Applied Physics Letters}, author={Xie, J. Q. and Mita, S. and Bryan, Z. and Guo, W. and Hussey, L. and Moody, B. and Schlesser, R. and Kirste, R. and Gerhold, M. and Collazo, R. and et al.}, year={2013} } @article{kinoshita_obata_nagashima_yanagi_moody_mita_inoue_kumagai_koukitu_sitar_2013, title={Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy}, volume={6}, DOI={10.7567/apex.6.092103}, number={9}, journal={Applied Physics Express}, author={Kinoshita, T. and Obata, T. and Nagashima, T. and Yanagi, H. and Moody, B. and Mita, S. and Inoue, S. and Kumagai, Y. and Koukitu, A. and Sitar, Z.}, year={2013} } @article{makowski_kim_gaillard_janes_manfra_bryan_sitar_arellano_xie_collazo_et al._2013, title={Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications}, volume={102}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4791788}, DOI={10.1063/1.4791788}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Makowski, M. S. and Kim, S. and Gaillard, M. and Janes, D. and Manfra, M. J. and Bryan, I. and Sitar, Z. and Arellano, C. and Xie, J. and Collazo, R. and et al.}, year={2013}, month={Feb}, pages={074102} } @article{kirste_mita_hussey_hoffmann_guo_bryan_bryan_tweedie_xie_gerhold_et al._2013, title={Polarity control and growth of lateral polarity structures in AlN}, volume={102}, DOI={10.1063/1.4804575}, number={18}, journal={Applied Physics Letters}, author={Kirste, R. and Mita, S. and Hussey, L. and Hoffmann, M. P. and Guo, W. and Bryan, I. and Bryan, Z. and Tweedie, J. and Xie, J. Q. and Gerhold, M. and et al.}, year={2013} } @article{skuridina_dinh_lacroix_ruterana_hoffmann_sitar_pristovsek_kneissl_vogt_2013, title={Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy}, volume={114}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.4828487}, DOI={10.1063/1.4828487}, number={17}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Skuridina, D. and Dinh, D. V. and Lacroix, B. and Ruterana, P. and Hoffmann, M. and Sitar, Z. and Pristovsek, M. and Kneissl, M. and Vogt, P.}, year={2013}, month={Nov}, pages={173503} } @article{sochacki_bryan_amilusik_collazo_lucznik_weyher_nowak_sadovyi_kamler_kucharski_et al._2013, title={Preparation of free-standing GaN substrates from thick GaN layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds}, volume={6}, DOI={10.7567/apex.6.075504}, number={7}, journal={Applied Physics Express}, author={Sochacki, T. and Bryan, Z. and Amilusik, M. and Collazo, R. and Lucznik, B. and Weyher, J. L. and Nowak, G. and Sadovyi, B. and Kamler, G. and Kucharski, R. and et al.}, year={2013} } @article{paisley_craft_losego_lu_gruverman_collazo_sitar_maria_2013, title={Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)]}, volume={114}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.4842135}, DOI={10.1063/1.4842135}, number={23}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Paisley, E. A. and Craft, H. S. and Losego, M. D. and Lu, H. and Gruverman, A. and Collazo, R. and Sitar, Z. and Maria, J.-P.}, year={2013}, month={Dec}, pages={239901} } @article{rigler_zgonik_hoffmann_kirste_bobea_collazo_sitar_mita_gerhold_2013, title={Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4800554}, number={22}, journal={Applied Physics Letters}, author={Rigler, M. and Zgonik, M. and Hoffmann, M. P. and Kirste, R. and Bobea, M. and Collazo, R. and Sitar, Z. and Mita, S. and Gerhold, M.}, year={2013} } @article{bryan_rice_hussey_bryan_bobea_mita_xie_kirste_collazo_sitar_2013, title={Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition}, volume={102}, DOI={10.1063/1.4792694}, number={6}, journal={Applied Physics Letters}, author={Bryan, I. and Rice, A. and Hussey, L. and Bryan, Z. and Bobea, M. and Mita, S. and Xie, J. and Kirste, R. and Collazo, R. and Sitar, Z.}, year={2013} } @article{freedman_leach_preble_sitar_davis_malen_2013, title={Universal phonon mean free path spectra in crystalline semiconductors at high temperature}, volume={3}, DOI={10.1038/srep02963}, journal={Scientific Reports}, author={Freedman, J. P. and Leach, J. H. and Preble, E. A. and Sitar, Z. and Davis, R. F. and Malen, J. A.}, year={2013} } @article{gaddy_bryan_bryan_kirste_xie_dalmau_moody_kumagai_nagashima_kubota_et al._2013, title={Vacancy compensation and related donor-acceptor pair recombination in bulk AlN}, volume={103}, DOI={10.1063/1.4824731}, number={16}, journal={Applied Physics Letters}, author={Gaddy, B. E. and Bryan, Z. and Bryan, I. and Kirste, R. and Xie, J. Q. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and Kubota, Y. and et al.}, year={2013} } @article{bobea_tweedie_bryan_bryan_rice_dalmau_xie_collazo_sitar_2013, title={X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN}, volume={113}, DOI={10.1063/1.4798352}, number={12}, journal={Journal of Applied Physics}, author={Bobea, M. and Tweedie, J. and Bryan, I. and Bryan, Z. and Rice, A. and Dalmau, R. and Xie, J. and Collazo, R. and Sitar, Z.}, year={2013} } @article{kinoshita_hironaka_obata_nagashima_dalmau_schlesser_moody_xie_inoue_kumagai_et al._2012, title={Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy}, volume={5}, DOI={10.1143/apex.5.122101}, number={12}, journal={Applied Physics Express}, author={Kinoshita, T. and Hironaka, K. and Obata, T. and Nagashima, T. and Dalmau, R. and Schlesser, R. and Moody, B. and Xie, J. Q. and Inoue, S. and Kumagai, Y. and et al.}, year={2012} } @article{railsback_singh_pearce_mcknight_collazo_sitar_yingling_melechko_2012, title={Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012)}, volume={24}, ISSN={0935-9648}, url={http://dx.doi.org/10.1002/adma.201290188}, DOI={10.1002/adma.201290188}, number={31}, journal={Advanced Materials}, publisher={Wiley}, author={Railsback, Justin G. and Singh, Abhishek and Pearce, Ryan C. and McKnight, Timothy E. and Collazo, Ramón and Sitar, Zlatko and Yingling, Yaroslava G. and Melechko, Anatoli V.}, year={2012}, month={Aug}, pages={4221–4221} } @article{hussey_mita_xie_guo_akouala_rajan_bryan_collazo_sitar_2012, title={Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition}, volume={112}, DOI={10.1063/1.4768526}, number={11}, journal={Journal of Applied Physics}, author={Hussey, L. and Mita, S. and Xie, J. Q. and Guo, W. and Akouala, C. R. and Rajan, J. and Bryan, I. and Collazo, R. and Sitar, Z.}, year={2012} } @article{collazo_xie_gaddy_bryan_kirste_hoffmann_dalmau_moody_kumagai_nagashima_et al._2012, title={On the origin of the 265 nm absorption band in AlN bulk crystals}, volume={100}, DOI={10.1063/1.4717623}, number={19}, journal={Applied Physics Letters}, author={Collazo, R. and Xie, J. Q. and Gaddy, B. E. and Bryan, Z. and Kirste, R. and Hoffmann, M. and Dalmau, R. and Moody, B. and Kumagai, Y. and Nagashima, T. and et al.}, year={2012} } @article{neuschl_thonke_feneberg_mita_xie_dalmau_collazo_sitar_2012, title={Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN}, volume={249}, DOI={10.1002/pssb.201100381}, number={3}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Neuschl, B. and Thonke, K. and Feneberg, M. and Mita, S. and Xie, J. Q. and Dalmau, R. and Collazo, R. and Sitar, Z.}, year={2012}, pages={511–515} } @article{callsen_wagner_kure_reparaz_bugler_brunnmeier_nenstiel_hoffmann_hoffmann_tweedie_et al._2012, title={Optical signature of Mg-doped GaN: Transfer processes}, volume={86}, DOI={10.1103/physrevb.86.075207}, number={7}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Callsen, G. and Wagner, M. R. and Kure, T. and Reparaz, J. S. and Bugler, M. and Brunnmeier, J. and Nenstiel, C. and Hoffmann, A. and Hoffmann, M. and Tweedie, J. and et al.}, year={2012} } @article{wunderer_chua_northrup_yang_johnson_kneissl_garrett_shen_wraback_moody_et al._2012, title={Optically pumped UV lasers grown on bulk AlN substrates}, volume={9}, ISSN={1862-6351}, url={http://dx.doi.org/10.1002/pssc.201100424}, DOI={10.1002/pssc.201100424}, number={3-4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Wunderer, T. and Chua, C. L. and Northrup, J. E. and Yang, Z. and Johnson, N. M. and Kneissl, M. and Garrett, G. A. and Shen, H. and Wraback, M. and Moody, B. and et al.}, year={2012}, month={Feb}, pages={822–825} } @article{kumagai_kubota_nagashima_kinoshita_dalmau_schlesser_moody_xie_murakami_koukitu_et al._2012, title={Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport}, volume={5}, DOI={10.1143/apex.5.055504}, number={5}, journal={Applied Physics Express}, author={Kumagai, Y. and Kubota, Y. and Nagashima, T. and Kinoshita, T. and Dalmau, R. and Schlesser, R. and Moody, B. and Xie, J. 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T. and Sitar, Z.}, year={2006}, pages={248–253} } @article{dalmau_schlesser_rodriguez_nemanich_sitar_2005, title={AlN bulk crystals grown on SiC seeds}, volume={281}, DOI={10.1016/j.jcrysgro.2005.03.012}, number={1}, journal={Journal of Crystal Growth}, author={Dalmau, R. and Schlesser, R. and Rodriguez, B. J. and Nemanich, R. J. and Sitar, Z.}, year={2005}, pages={68–74} } @article{freitas_sitar_2005, title={Bulk nitride workshop - Preface}, volume={281}, DOI={10.1016/j.jcrysgro.2005.04.026}, number={1}, journal={Journal of Crystal Growth}, author={Freitas, J. A. and Sitar, Z.}, year={2005}, pages={1} } @article{schlesser_dalmau_zhuang_collazo_sitar_2005, title={Crucible materials for growth of aluminum nitride crystals}, volume={281}, DOI={10.1016/j.jcrysgro.2005.03.014}, number={1}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Dalmau, R. and Zhuang, D. and Collazo, R. and Sitar, Z.}, year={2005}, pages={75–80} } @article{wu_noveski_zhang_schlesser_mahajan_beaudoin_sitar_2005, title={Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling}, volume={5}, DOI={10.1021/cg050014m}, number={4}, journal={Crystal Growth and Design}, author={Wu, B. and Noveski, V. and Zhang, H. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2005}, pages={1491–1498} } @article{aleksov_wolter_prater_sitar_2005, title={Fabrication and thermal evaluation of silicon on diamond wafers}, volume={34}, DOI={10.1007/s11664-005-0100-y}, number={7}, journal={Journal of Electronic Materials}, author={Aleksov, A. and Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2005}, pages={1089–1094} } @article{mecouch_reitmeier_park_davis_sitar_2005, title={Growth of gallium nitride via iodine vapor phase growth}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461532}, DOI={10.1002/pssc.200461532}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mecouch, W. J. and Reitmeier, Z. J. and Park, J.-S. and Davis, R. F. and Sitar, Z.}, year={2005}, month={May}, pages={2129–2132} } @article{dalmau_schlesser_sitar_2005, title={Polarity and morphology in seeded growth of bulk AlN on SiC}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461511}, DOI={10.1002/pssc.200461511}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2036–2039} } @article{collazo_mita_schlesser_sitar_2005, title={Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461546}, DOI={10.1002/pssc.200461546}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Collazo, R. and Mita, S. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2117–2120} } @article{senawiratne_strassburg_dietz_haboeck_hoffmann_noveski_dalmau_schlesser_sitar_2005, title={Raman, photoluminescence and absorption studies on high quality AlN single crystals}, volume={2}, ISSN={1610-1634 1610-1642}, url={http://dx.doi.org/10.1002/pssc.200461509}, DOI={10.1002/pssc.200461509}, number={7}, journal={physica status solidi (c)}, publisher={Wiley}, author={Senawiratne, J. and Strassburg, M. and Dietz, N. and Haboeck, U. and Hoffmann, A. and Noveski, V. and Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2005}, month={May}, pages={2774–2778} } @article{noveski_schlesser_raghothamachar_dudley_mahajan_beaudoin_sitar_2005, title={Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules}, volume={279}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/j.jcrysgro.2004.12.027}, DOI={10.1016/j.jcrysgro.2004.12.027}, number={1-2}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Noveski, V. and Schlesser, R. and Raghothamachar, B. and Dudley, M. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2005}, month={May}, pages={13–19} } @article{aleksov_li_govindaraju_gobien_wolter_prater_sitar_2005, title={Silicon-on-diamond: An advanced silicon-on-insulator technology}, volume={14}, DOI={10.1016/j.diamond.2005.01.019}, number={07-Mar}, journal={Diamond and Related Materials}, author={Aleksov, A. and Li, X. and Govindaraju, N. and Gobien, J. M. and Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2005}, pages={308–313} } @misc{yushin_kvit_sitar_2005, title={Transmission electron microscopy studies of the bonded SiC-SiC interface}, volume={40}, DOI={10.1007/s10853-005-0779-4}, number={16}, journal={Journal of Materials Science}, author={Yushin, G. N. and Kvit, A. V. and Sitar, Z.}, year={2005}, pages={4369–4371} } @article{chen_skromme_dalmau_schlesser_sitar_chen_sun_yang_khan_nakarmi_et al._2004, title={Band-edge exciton states in AlN single crystals and epitaxial layers}, volume={85}, DOI={10.1063/1.1818733}, number={19}, journal={Applied Physics Letters}, author={Chen, L. and Skromme, B. J. and Dalmau, R. F. and Schlesser, R. and Sitar, Z. and Chen, C. and Sun, W. and Yang, J. and Khan, M. A. and Nakarmi, M. L. and et al.}, year={2004}, pages={4334–4336} } @article{noveski_schlesser_mahajan_beaudoin_sitar_2004, title={Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere}, volume={9}, DOI={10.1557/s1092578300000375}, number={2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Noveski, V. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2004} } @article{yushin_sitar_2004, title={Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface}, volume={84}, DOI={10.1063/1.1753065}, number={20}, journal={Applied Physics Letters}, author={Yushin, G. N. and Sitar, Z.}, year={2004}, pages={3993–3995} } @article{noveski_schlesser_mahajan_beaudoin_sitar_2004, title={Mass transfer in A1N crystal growth at high temperatures}, volume={264}, DOI={10.1016/j.jcrysgro.2004.01.028}, number={1/3}, journal={Journal of Crystal Growth}, author={Noveski, V. and Schlesser, R. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2004}, pages={369–378} } @article{brenner_schlesser_sitar_dalmau_collazo_li_2004, title={Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport}, volume={560}, DOI={10.1016/j.susc.2004.05.003}, number={03-Jan}, journal={Surface Science}, author={Brenner, D. W. and Schlesser, R. and Sitar, Z. and Dalmau, R. and Collazo, R. and Li, Y.}, year={2004}, pages={L202–206} } @article{grenko_reynolds_schlesser_hren_bachmann_sitar_kotula_2004, title={Nanoscale GaN whiskers fabricated by photoelectrochemical etching}, volume={96}, DOI={10.1063/1.1788841}, number={9}, journal={Journal of Applied Physics}, author={Grenko, J. A. and Reynolds, C. L. and Schlesser, R. and Hren, J. J. and Bachmann, K. and Sitar, Z. and Kotula, P. G.}, year={2004}, pages={5185–5188} } @article{robertson_kawarada_kohn_sitar_2004, title={Proceedings of the 14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide}, volume={13}, ISSN={0925-9635}, url={http://dx.doi.org/10.1016/j.diamond.2004.02.001}, DOI={10.1016/j.diamond.2004.02.001}, number={4-8}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Robertson, John and Kawarada, Hiroshi and Kohn, Erhard and Sitar, Zlatko}, year={2004}, month={Apr}, pages={xiii} } @article{wolter_borca-tasciuc_chen_prater_sitar_2004, title={Processing and thermal properties of highly oriented diamond thin films}, volume={469-70}, DOI={10.1016/j.tsf.2004.08.062}, number={Dec 22 2004}, journal={Thin Solid Films}, author={Wolter, S. D. and Borca-Tasciuc, D. and Chen, G. and Prater, J. T. and Sitar, Z.}, year={2004}, pages={105–111} } @article{grenko_reynolds_schlesser_bachmann_rietmeier_davis_sitar_2004, title={Selective etching of GaN from AlGaN/GaN and AlN/GaN structures}, volume={9}, DOI={10.1557/s1092578300000405}, number={5}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Grenko, J. A. and Reynolds, C. L. and Schlesser, R. and Bachmann, K. and Rietmeier, Z. and Davis, R. F. and Sitar, Z.}, year={2004} } @article{strassburg_senawiratne_dietz_haboeck_hoffmann_noveski_dalmau_schlesser_sitar_2004, title={The growth and optical properties of large, high-quality AlN single crystals}, volume={96}, DOI={10.1063/1.1801159}, number={10}, journal={Journal of Applied Physics}, author={Strassburg, M. and Senawiratne, J. and Dietz, N. and Haboeck, U. and Hoffmann, A. and Noveski, V. and Dalmau, R. and Schlesser, R. and Sitar, Z.}, year={2004}, pages={5870–5876} } @article{yushin_aleksov_wolter_okuzumi_prater_sitar_2004, title={Wafer bonding of highly oriented diamond to silicon}, volume={13}, DOI={10.1016/j.diamond.2004.04.007}, number={10}, journal={Diamond and Related Materials}, author={Yushin, G. N. and Aleksov, A. and Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2004}, pages={1816–1821} } @article{chang_chattopadhyay_chen_chen_chen_chen_collazo_sitar_2003, title={Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates}, volume={68}, DOI={10.1103/physrevb.68.125322}, number={12}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Chang, C. S. and Chattopadhyay, S. and Chen, L. C. and Chen, K. H. and Chen, C. W. and Chen, Y. F. and Collazo, R. and Sitar, Z.}, year={2003} } @article{wolter_okuzumi_prater_sitar_2003, title={Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond}, volume={440}, DOI={10.1016/S0040-6090(03)00827-7}, number={02-Jan}, journal={Thin Solid Films}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={145–151} } @article{collazo_schlesser_roskowski_miraglia_davis_sitar_2003, title={Electron energy distribution during high-field transport in AlN}, volume={93}, DOI={10.1063/1.1543633}, number={5}, journal={Journal of Applied Physics}, author={Collazo, R. and Schlesser, R. and Roskowski, A. and Miraglia, P. and Davis, R. F. and Sitar, Z.}, year={2003}, pages={2765–2771} } @article{schlesser_mcclure_sitar_2003, title={Mechanisms limiting electron field emission from diamond}, volume={13}, number={5}, journal={New Diamond and Frontier Carbon Technology}, author={Schlesser, R. and McClure, M. T. and Sitar, Z.}, year={2003}, pages={285–295} } @article{wolter_yushin_prater_sitar_2003, title={Processing routes for direct bonding of silicon to epitaxially textured diamond}, volume={12}, DOI={10.1016/S0925-9635(02)00392-8}, number={3-7}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Yushin, G. N. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={257–261} } @article{wolter_borca-tasciuc_chen_govindaraju_collazo_okuzumi_prater_sitar_2003, title={Thermal conductivity of epitaxially textured diamond films}, volume={12}, DOI={10.1016/S0925-9635(02)00248-0}, number={1}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Borca-Tasciuc, D. A. and Chen, G. and Govindaraju, N. and Collazo, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2003}, pages={61–64} } @article{wolter_okuzumi_prater_sitar_2002, title={AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100)}, volume={149}, DOI={10.1149/1.1430720}, number={2}, journal={Journal of the Electrochemical Society}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={G114–117} } @article{wolter_yushin_okuzumi_stoner_prater_sitar_2002, title={Direct fusion bonding of silicon to polycrystalline diamond}, volume={11}, DOI={10.1016/S0925-9635(01)00608-2}, number={3-6}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Yushin, G. N. and Okuzumi, F. and Stoner, B. R. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={482–486} } @article{collazo_schlesser_sitar_2002, title={Experimental observation of electron velocity overshoot in AlN}, volume={81}, DOI={10.1063/1.1534407}, number={27}, journal={Applied Physics Letters}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2002}, pages={5189–5191} } @article{shin_arkun_thomson_miraglia_preble_schlesser_wolter_sitar_davis_2002, title={Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio}, volume={236}, DOI={10.1016/S0022-0248(02)00825-4}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Arkun, E. and Thomson, D. B. and Miraglia, P. and Preble, E. and Schlesser, R. and Wolter, S. and Sitar, Z. and Davis, R. F.}, year={2002}, pages={529–537} } @article{schlesser_sitar_2002, title={Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere}, volume={234}, DOI={10.1016/S0022-0248(01)01720-1}, number={2-3}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Sitar, Z.}, year={2002}, pages={349–353} } @article{shin_thomson_schlesser_davis_sitar_2002, title={High temperature nucleation and growth of GaN crystals from the vapor phase}, volume={241}, DOI={10.1016/S0022-0248(02)01290-3}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Thomson, D. B. and Schlesser, R. and Davis, R. F. and Sitar, Z.}, year={2002}, pages={404–415} } @article{collazo_schlesser_sitar_2002, title={Role of adsorbates in field emission from nanotubes}, volume={11}, DOI={10.1016/S0925-9635(01)00585-4}, number={3-6}, journal={Diamond and Related Materials}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2002}, pages={769–773} } @article{schlesser_dalmau_sitar_2002, title={Seeded growth of AlN bulk single crystals by sublimation}, volume={241}, DOI={10.1016/S0022-0248(02)01319-2}, number={4}, journal={Journal of Crystal Growth}, author={Schlesser, R. and Dalmau, R. and Sitar, Z.}, year={2002}, pages={416–420} } @article{yushin_wolter_kvit_collazo_stoner_prater_sitar_2002, title={Study of fusion bonding of diamond to silicon for silicon-on- diamond technology}, volume={81}, DOI={10.1063/1.1516636}, number={17}, journal={Applied Physics Letters}, author={Yushin, G. N. and Wolter, S. D. and Kvit, A. V. and Collazo, R. and Stoner, B. R. and Prater, J. T. and Sitar, Z.}, year={2002}, pages={3275–3277} } @article{raghothamachar_vetter_dudley_dalmau_schlesser_sitar_michaels_kolis_2002, title={Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN}, volume={246}, DOI={10.1016/S0022-0248(02)01751-7}, number={3-4}, journal={Journal of Crystal Growth}, author={Raghothamachar, B. and Vetter, W. M. and Dudley, M. and Dalmau, R. and Schlesser, R. and Sitar, Z. and Michaels, E. and Kolis, J. W.}, year={2002}, pages={271–280} } @article{wolter_schlesser_okuzumi_prater_sitar_2001, title={Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality}, volume={10}, DOI={10.1016/S0925-9635(01)00487-3}, number={11}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Schlesser, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={2092–2095} } @article{wolter_okuzumi_prater_sitar_2001, title={Frequency and duty cycle dependence on the pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon}, volume={186}, DOI={10.1002/1521-396x(200108)186:2<331::aid-pssa331>3.0.co;2-1}, number={2}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Wolter, S. D. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={331–337} } @article{wolter_schlesser_okuzumi_prater_sitar_2001, title={Process optimization in the low-pressure flat flame growth of diamond}, volume={10}, DOI={10.1016/S0925-9635(00)00477-5}, number={3-7}, journal={Diamond and Related Materials}, author={Wolter, S. D. and Schlesser, R. and Okuzumi, F. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={289–294} } @article{wolter_prater_sitar_2001, title={Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame}, volume={226}, DOI={10.1016/S0022-0248(01)01274-X}, number={1}, journal={Journal of Crystal Growth}, author={Wolter, S. D. and Prater, J. T. and Sitar, Z.}, year={2001}, pages={88–94} } @article{collazo_schlesser_sitar_2001, title={Two field-emission states of single-walled carbon nanotubes}, volume={78}, DOI={10.1063/1.1361089}, number={14}, journal={Applied Physics Letters}, author={Collazo, R. and Schlesser, R. and Sitar, Z.}, year={2001}, pages={2058–2060} } @article{hren_zhirnov_sitar_wojak_2000, title={Characterization of dielectrics on the 'tips of needles'}, volume={30}, number={4}, journal={Electrochemistry}, author={Hren, J. J. and Zhirnov, V. V. and Sitar, Z. and Wojak, G.}, year={2000}, pages={210–215} } @article{schlesser_collazo_bower_zhou_sitar_2000, title={Energy distribution of field emitted electrons from carbon nanotubes}, volume={9}, DOI={10.1016/s0925-9635(99)00277-0}, number={3-6}, journal={Diamond and Related Materials}, author={Schlesser, R. and Collazo, R. and Bower, C. and Zhou, O. and Sitar, Z.}, year={2000}, pages={1201–1204} } @article{balkas_sitar_bergman_shmagin_muth_kolbas_nemanich_davis_2000, title={Growth and characterization of GaN single crystals}, volume={208}, DOI={10.1016/S0022-0248(99)00445-5}, number={1-4}, journal={Journal of Crystal Growth}, author={Balkas, C. M. and Sitar, Z. and Bergman, L. and Shmagin, I. K. and Muth, J. F. and Kolbas, R. and Nemanich, R. J. and Davis, R. F.}, year={2000}, pages={100–106} } @article{collazo_schlesser_roskowski_davis_sitar_2000, title={Hot electron transport in AlN}, volume={88}, DOI={10.1063/1.1318386}, number={10}, journal={Journal of Applied Physics}, author={Collazo, R. and Schlesser, R. and Roskowski, A. and Davis, R. F. and Sitar, Z.}, year={2000}, pages={5865–5869} } @article{park_sowers_rinne_schlesser_bergman_nemanich_sitar_hren_cuomo_zhirnov_et al._1999, title={Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond}, volume={17}, DOI={10.1116/1.590630}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Park, M. and Sowers, A. T. and Rinne, C. L. and Schlesser, R. and Bergman, L. and Nemanich, R. J. and Sitar, Z. and Hren, J. J. and Cuomo, J. J. and Zhirnov, V. V. and et al.}, year={1999}, pages={734–739} } @article{wolden_draper_sitar_prater_1999, title={The influences of reactant composition and substrate material on the combustion synthesis of diamond}, volume={14}, DOI={10.1557/JMR.1999.0038}, number={1}, journal={Journal of Materials Research}, author={Wolden, C. A. and Draper, C. E. and Sitar, Z. and Prater, J. T.}, year={1999}, pages={259–269} } @article{yang_wolden_liu_schlesser_davis_prater_sitar_1998, title={Coalesced oriented diamond films on nickel}, volume={13}, DOI={10.1557/JMR.1998.0157}, number={5}, journal={Journal of Materials Research}, author={Yang, P. C. and Wolden, C. A. and Liu, W. and Schlesser, R. and Davis, R. F. and Prater, J. T. and Sitar, Z.}, year={1998}, pages={1120–1123} } @article{ward_nam_hartman_english_mccarson_schlesser_sitar_davis_nemanich_1998, title={Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy}, volume={84}, DOI={10.1063/1.368775}, number={9}, journal={Journal of Applied Physics}, author={Ward, B. L. and Nam, O. H. and Hartman, J. D. and English, S. L. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Nemanich, R. J.}, year={1998}, pages={5238–5242} } @article{mccarson_schlesser_mcclure_sitar_1998, title={Electron emission mechanism from cubic boron nitride-coated molybdenum emitters}, volume={72}, DOI={10.1063/1.121492}, number={22}, journal={Applied Physics Letters}, author={McCarson, B. L. and Schlesser, R. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={2909–2911} } @article{choi_schlesser_wojak_cuomo_sitar_hren_1998, title={Electron energy distribution of diamond-coated field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Choi, W. B. and Schlesser, R. and Wojak, G. and Cuomo, J. J. and Sitar, Z. and Hren, J. J.}, year={1998}, month={Mar}, pages={716–719} } @article{mccarson_schlesser_sitar_1998, title={Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior}, volume={84}, DOI={10.1063/1.368496}, number={6}, journal={Journal of Applied Physics}, author={McCarson, B. L. and Schlesser, R. and Sitar, Z.}, year={1998}, pages={3382–3385} } @article{schlesser_mccarson_mcclure_sitar_1998, title={Field emission energy distribution analysis of wide-band-gap field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Schlesser, R. and McCarson, B. L. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={689–692} } @article{wolden_davis_sitar_prater_1998, title={Flat-flame diamond CVD: the effect of pressure and operating conditions for specific applications}, volume={7}, DOI={10.1016/S0925-9635(97)00206-9}, number={2-5}, journal={Diamond and Related Materials}, author={Wolden, C. A. and Davis, R. F. and Sitar, Z. and Prater, J. T.}, year={1998}, pages={133–138} } @article{sitar_liu_yang_wolden_schlesser_prater_1998, title={Heteroepitaxial nucleation of diamond on nickel}, volume={7}, DOI={10.1016/S0925-9635(97)00244-6}, number={2-5}, journal={Diamond and Related Materials}, author={Sitar, Z. and Liu, W. and Yang, P. C. and Wolden, C. A. and Schlesser, R. and Prater, J. T.}, year={1998}, pages={276–282} } @article{schlesser_mcclure_mccarson_sitar_1998, title={Mechanisms of field emission from diamond coated Mo emitters}, volume={7}, DOI={10.1016/S0925-9635(97)00290-2}, number={2-5}, journal={Diamond and Related Materials}, author={Schlesser, R. and McClure, M. T. and McCarson, B. L. and Sitar, Z.}, year={1998}, pages={636–639} } @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, DOI={10.1063/1.368752}, number={9}, journal={Journal of Applied Physics}, author={Ronning, C. and Banks, A. D. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Ward, B. L. and Nemanich, R. J.}, year={1998}, pages={5046–5051} } @article{yang_liu_schlesser_wolden_davis_prater_sitar_1998, title={Surface melting in the heteroepitaxial nucleation of diamond on Ni}, volume={187}, DOI={10.1016/S0022-0248(97)00854-3}, number={1}, journal={Journal of Crystal Growth}, author={Yang, P. C. and Liu, W. and Schlesser, R. and Wolden, C. A. and Davis, R. F. and Prater, J. T. and Sitar, Z}, year={1998}, pages={81–88} } @article{wolden_draper_sitar_prater_1998, title={The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond}, volume={7}, DOI={10.1016/S0925-9635(98)00172-1}, number={8}, journal={Diamond and Related Materials}, author={Wolden, C. A. and Draper, C. E. and Sitar, Z. and Prater, J. T.}, year={1998}, pages={1178–1183} } @article{liu_yang_wolden_davis_prater_sitar_1998, title={Transmission electron microscoanalysis of the oriented diamond growth on nickel substrates}, volume={83}, DOI={10.1063/1.367885}, number={12}, journal={Journal of Applied Physics}, author={Liu, W. and Yang, P. C. and Wolden, C. A. and Davis, R. F. and Prater, J. T. and Sitar, Z.}, year={1998}, pages={7658–7663} } @article{yang_schlesser_wolden_liu_davis_sitar_prater_1997, title={Control of diamond heteroepitaxy on nickel by optical reflectance}, volume={70}, DOI={10.1063/1.118756}, number={22}, journal={Applied Physics Letters}, author={Yang, P. C. and Schlesser, R. and Wolden, C. A. and Liu, W. and Davis, R. F. and Sitar, Z. and Prater, J. T.}, year={1997}, pages={2960–2962} } @article{tao_gitmans_sitar_pierhofer_kundig_gamboni_gunter_1997, title={Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy}, volume={201}, DOI={10.1080/00150199708228374}, number={1-4}, journal={Ferroelectrics}, author={Tao, Y. and Gitmans, F. and Sitar, Z. and Pierhofer, H. and Kundig, A. and Gamboni, I. and Gunter, P.}, year={1997}, pages={245–253} } @article{mcclure_schlesser_mccarson_sitar_1997, title={Electrical characterization of diamond and graphite coated Mo field emitters}, volume={15}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={McClure, M. T. and Schlesser, R. and McCarson, B. 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