@article{sengupta_little_mita_markham_dycus_stein_wu_sitar_kish_pavlidis_2024, title={Wafer-bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaN p-n diodes with near-unity ideality factor}, volume={125}, ISSN={["1077-3118"]}, DOI={10.1063/5.0194526}, abstractNote={III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.}, number={6}, journal={APPLIED PHYSICS LETTERS}, author={Sengupta, Rohan and Little, Brian and Mita, Seiji and Markham, Keith and Dycus, J. Houston and Stein, Shane and Wu, Barry and Sitar, Zlatko and Kish, Fred and Pavlidis, Spyridon}, year={2024}, month={Aug} }
 @article{begley_markham_mizak_pilchak_miller_2020, title={Prediction of relative globularization rates in alpha plus beta titanium alloys as a function of initial crystal orientation}, volume={35}, ISSN={["2044-5326"]}, DOI={10.1557/jmr.2020.54}, abstractNote={Abstract}, number={8}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Begley, Benjamin A. and Markham, Keith and Mizak, Michael and Pilchak, Adam L. and Miller, Victoria M.}, year={2020}, month={Apr}, pages={1113–1120} }