@article{narasimhan_sisson_leslie_parmar_rastogi_bhattacharya_2023, title={Design Considerations of a 3.3 kV SiC-based Reverse Voltage Blocking Module for Current Source Inverter Application}, ISSN={["1048-2334"]}, DOI={10.1109/APEC43580.2023.10131381}, abstractNote={This paper presents the design and development of a 3.3 kV silicon carbide (SiC) based reverse voltage blocking half-bridge module for the first time. This low inductance module can build a single-phase or a three-phase current source inverter (CSI). The module comprises of a SiC-MOSFET (3.3 kV/50 A die) and a SiC-MPS diode (3.3 kV/50 A die) to form a 3.3 kV SiC-based current switch in the half-bridge configuration. The static characterization of the current switch (CS) is performed, and a double pulse test circuit is used to verify the switching performance of the developed module. Additionally, the inverter efficiency is estimated for a 30 kW three-phase CSI for a motor drive application, using the obtained static and dynamic characterization results. The impact of the module inductances on the switch voltage and currents is discussed, thus illustrating the importance of a module-based design for CSI applications.}, journal={2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC}, author={Narasimhan, Sneha and Sisson, Colton and Leslie, Scott and Parmar, Keval and Rastogi, Sagar Kumar and Bhattacharya, Subhashish}, year={2023}, pages={350–357} }
 @article{narasimhan_kanale_bhattacharya_baliga_2023, title={Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application}, volume={11}, ISSN={["2169-3536"]}, url={https://doi.org/10.1109/ACCESS.2023.3302916}, DOI={10.1109/ACCESS.2023.3302916}, abstractNote={SiC power devices are used for medium-voltage (MV) motor drive and traction applications due to their higher temperature operation, switching frequencies, and higher efficiencies than Si-based devices. This article investigates three 3.3 kV reverse blocking or current switch configurations for their suitability in MV current-source inverter (CSI) applications. The three configurations are 1) Type I - SiC MOSFET and series Schottky diode; 2) Type II - SiC MOSFETs connected in common-source (CS); and 3) Type III - SiC MOSFETs connected in common-drain (CD) configuration. The switch configurations are characterized by comparing their on-state and switching performance at different junction temperatures varying from 25°C to 125°C. The results are used to evaluate three-phase CSI losses with three different switch configurations and choose the preferred switch configuration for MV-based CSI applications based on inverter efficiency while considering a wide range of operating points. The permissible limits of a 3.3 kV Type I switch-based CSI are presented, thus providing a safe operating area (SOA) of the switch configuration for a CSI application. Finally, the CSI is built using Type I switch configuration and is experimentally validated with an R-L load.}, journal={IEEE ACCESS}, author={Narasimhan, Sneha and Kanale, Ajit and Bhattacharya, Subhashish and Baliga, Jayant B.}, year={2023}, pages={89277–89289} }
 @article{kim_liu_butler_narasimhan_parrish_gebremariam_dimarino_2023, title={Women in IEEE PELS}, volume={10}, ISSN={["2329-9215"]}, DOI={10.1109/MPEL.2023.3301286}, abstractNote={After emerging from the peak of the COVID era, with heavy travel restrictions and less-than-optimal interactions at virtual conferences, we ventured out to our first in-person conferences over the past year. What awaited us was the heartening sight of more women taking up prominent roles in every aspect of the conference. From influential plenary speakers to confident session chairs, passionate presenters, engaged attendees, and dedicated organizers. It served as a powerful reminder that the traditionally male-dominated domain is gradually transforming and becoming more inclusive. While a considerable journey remains ahead, we made unmistakable progress this past year.}, number={3}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Kim, Katherine A. and Liu, Yunting and Butler, Stephanie Watts and Narasimhan, Sneha and Parrish, Kristen and Gebremariam, Mhret Berhe and Dimarino, Christina}, year={2023}, month={Sep}, pages={76–83} }
 @article{narasimhan_rastogi_bhattacharya_2022, title={Short-Circuit Fault Diagnosis of a Three-Phase Current-Source Inverter}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE50734.2022.9947610}, abstractNote={The development of the wide-band gap devices has led to the re-emergence of current-source inverters (CSIs). With the modernization of future power systems, the importance of the reliability of power converters is critical. Fault identification is vital to enhancing the reliability of the system. A prominent failure mode in power converters occurs due to the semiconductor device failure. The normal and fault mode operation of the converter is discussed for the three short-circuit fault conditions observed in current-source inverters. This paper proposes a method to detect and locate the short-circuit fault of a MOSFET switch, a diode switch, and a current switch comprising of both MOSFET and diode simultaneously, in a CSI. A fault detection method that involves checking the ratio of the average value of the ac currents and average value of the reference currents in one fundamental cycle to threshold limits is used to detect and identify the location of the fault. This method does not need additional voltage or current sensors for implementing the proposed algorithm. The effectiveness of the proposed method is shown in simulation and experimental results are provided to validate the same. This proposed method for fault identification improves the system reliability of CSIs.}, journal={2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Narasimhan, Sneha and Rastogi, Sagar Kumar and Bhattacharya, Subhashish}, year={2022} }
 @article{narasimhan_anurag_bhattacharya_2021, title={Comparative Study of a 3.3 kV SiC-based Voltage and Current Source Inverter for High-Speed Motor Drive Applications}, ISSN={["2150-6078"]}, DOI={10.1109/ECCE-Asia49820.2021.9479066}, abstractNote={Current source inverters (CSIs) is a technology typically used for high power medium voltage (MV) applications. With the emergence of wide-bandgap (WBG) technology, the CSI has been widely looked into for aerospace applications, MV solid-state transformers (SST), electric vehicles, traction applications, and renewable energy systems. This paper looks into the potential of MV-based CSI inverter for high-speed machine (HSM) applications compared to MV-based voltage source inverters (VSIs) inverter in terms of efficiency, reflected voltage, and sizing of passive components. It also compares the effects of dead-time in the VSI and effects of overlap-time in the CSI. The fault tolerance of permanent magnet motor-based HSM for VSI and CSI-based systems is discussed. The switch configuration required for a WBG based MV-based CSI is discussed.}, journal={2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA)}, author={Narasimhan, Sneha and Anurag, Anup and Bhattacharya, Subhashish}, year={2021}, pages={2211–2217} }
 @inproceedings{kanale_narasimhan_cheng_agarwal_shah_baliga_bhattacharya_hopkins_2021, title={Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies}, ISBN={9781665401821}, url={http://dx.doi.org/10.1109/WiPDA49284.2021.9645130}, DOI={10.1109/WiPDA49284.2021.9645130}, abstractNote={Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1. 17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1. 52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.}, booktitle={2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, publisher={IEEE}, author={Kanale, Ajit and Narasimhan, Sneha and Cheng, Tzu-Hsuan and Agarwal, Aditi and Shah, Suyash Sushilkumar and Baliga, B. Jayant and Bhattacharya, Subhashish and Hopkins, Douglas C.}, year={2021}, pages={112–117} }
 @article{simizu_byerly_schneider_kim_nations_narasimhan_beddingfield_bhattachayara_mchenry_2021, title={Flux Switching Permanent Magnet Motor with Metal Amorphous Nanocomposite Soft Magnetic Material and Rare Earth Free Permanent Magnets}, ISSN={["2329-3721"]}, DOI={10.1109/ECCE47101.2021.9594971}, abstractNote={The power losses in high power-density motors due to high rotational speed and/or high pole counts may be reduced adopting metal amorphous nanocomposites (MANCs) featuring low power loss and a relatively high flux density ($\sim$1.3 T). We recently proposed a flux switching permanent magnet (FSPM) motor with a rating of 2.5 kW at 1400 Hz electrical speed that incorporates low loss (<3W/kg at 1 kHz) FeNi-based MANC with projected iron loss of about 5 W. The motor design allows use of rare earth-free permanent magnets. To incorporate MANCs, an axial flux motor with rotor and stator cores made from a wound ribbon has been developed. We performed 3-d FEA to optimize the design and built and tested a prototype showing that low loss MANC material can be used for motor applications with high magnetic switching frequency.}, journal={2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Simizu, Satoru and Byerly, Kevin and Schneider, Kyle and Kim, Heonyoung and Nations, Mark and Narasimhan, Sneha and Beddingfield, Richard and Bhattachayara, Subhashish and McHenry, Michael E.}, year={2021}, pages={3866–3872} }
 @article{narasimhan_kanale_bhattacharya_baliga_2021, title={Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application}, DOI={10.1109/WiPDA49284.2021.9645089}, abstractNote={This paper for the first time discusses the dynamic characterization of 3.3 kV SiC-based reverse-voltage blocking current switch for three different switch configurations - SiC MOSFET with a series diode, SiC MOSFETs connected in the common-source or common-drain configuration. The dynamic characterization of the current switch is performed using the conventional double-pulse test at different junction temperatures and different gate resistances. This paper also discusses the static characterization of the latest generation 3.3 kV SiC MOSFET and Schottky diode TO-247 packages. The static characterization of the MOS-FET includes output characteristics, transfer characteristics, junction capacitance measurement and 3rd quadrant characteristics. The static characteristics of the Schottky diode includes the on-state characteristics, and junction capacitance measurement. With the obtained static and dynamic characterization data, the three-phase current-source inverter losses is evaluated for the three different switch configurations and the preferred current switch configuration is selected for a medium voltage-based high-speed motor drive application.}, journal={2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)}, author={Narasimhan, Sneha and Kanale, Ajit and Bhattacharya, Subhashish and Baliga, Jayant}, year={2021}, pages={366–371} }