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Hayden and Kim, Ji Hyun and Guan, Yan and Khachariya, Dolar and Quinones-Garcia, Cristyan and Sarkar, Biplab and Rathkanthiwar, Shashwat and et al.}, year={2022}, month={Feb} } @article{bagheri_quinones-garcia_khachariya_rathkanthiwar_reddy_kirste_mita_tweedie_collazo_sitar_2022, title={High electron mobility in AlN:Si by point and extended defect management}, volume={132}, ISSN={["1089-7550"]}, url={https://doi.org/10.1063/5.0124589}, DOI={10.1063/5.0124589}, number={18}, journal={JOURNAL OF APPLIED PHYSICS}, author={Bagheri, Pegah and Quinones-Garcia, Cristyan and Khachariya, Dolar and Rathkanthiwar, Shashwat and Reddy, Pramod and Kirste, Ronny and Mita, Seiji and Tweedie, James and Collazo, Ramon and Sitar, Zlatko}, year={2022}, month={Nov} } @article{rathkanthiwar_szymanski_khachariya_bagheri_kim_mita_reddy_kohn_pavlidis_kirste_et al._2022, title={Low resistivity, p-type, N-Polar GaN achieved by chemical potential control}, volume={15}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/ac8273}, number={8}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Szymanski, Dennis and Khachariya, Dolar and Bagheri, Pegah and Kim, Ji Hyun and Mita, Seiji and Reddy, Pramod and Kohn, Erhard and Pavlidis, Spyridon and Kirste, Ronny and et al.}, year={2022}, month={Aug} } @article{jadhav_bagheri_klump_khachariya_mita_reddy_rathkanthiwar_kirste_collazo_sitar_et al._2022, title={On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters}, volume={37}, ISSN={["1361-6641"]}, url={https://doi.org/10.1088/1361-6641/ac3710}, DOI={10.1088/1361-6641/ac3710}, number={1}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, publisher={IOP Publishing}, author={Jadhav, Aakash and Bagheri, Pegah and Klump, Andrew and Khachariya, Dolar and Mita, Seiji and Reddy, Pramod and Rathkanthiwar, Shashwat and Kirste, Ronny and Collazo, Ramon and Sitar, Zlatko and et al.}, year={2022}, month={Jan} } @article{rathkanthiwar_bagheri_khachariya_kim_kajikawa_reddy_mita_kirste_moody_collazo_et al._2022, title={On the conduction mechanism in compositionally graded AlGaN}, volume={121}, ISSN={["1077-3118"]}, DOI={10.1063/5.0100756}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Kim, Ji Hyun and Kajikawa, Yasutomo and Reddy, Pramod and Mita, Seiji and Kirste, Ronny and Moody, Baxter and Collazo, Ramon and et al.}, year={2022}, month={Aug} } @article{rathkanthiwar_bagheri_khachariya_mita_pavlidis_reddy_kirste_tweedie_sitar_collazo_2022, title={Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices}, volume={15}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/ac6566}, number={5}, journal={APPLIED PHYSICS EXPRESS}, author={Rathkanthiwar, Shashwat and Bagheri, Pegah and Khachariya, Dolar and Mita, Seiji and Pavlidis, Spyridon and Reddy, Pramod and Kirste, Ronny and Tweedie, James and Sitar, Zlatko and Collazo, Ramon}, year={2022}, month={May} } @article{rathkanthiwar_dycus_mita_kirste_tweedie_collazo_sitar_2022, title={Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates}, volume={120}, ISSN={["1077-3118"]}, DOI={10.1063/5.0092937}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Rathkanthiwar, Shashwat and Dycus, J. 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