Shashwat Rathkanthiwar

Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023). Anderson transition in compositionally graded p-AlGaN. JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419

Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023). Demonstration of near-ideal Schottky contacts to Si-doped AlN. APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023). High conductivity in Ge-doped AlN achieved by a non-equilibrium process. APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439

Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023). High p-conductivity in AlGaN enabled by polarization field engineering. APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427

Suraj, S. R. I. N. I. V. A. S. A. N., Rathkanthiwar, S., Raghavan, S., & Selvaraja, S. K. (2023). Polarization independent grating in a GaN-on-sapphire photonic integrated circuit. OPTICS EXPRESS, 31(14), 23350–23361. https://doi.org/10.1364/OE.487389

Rathkanthiwar, S., Graziano, M. B., Tweedie, J., Mita, S., Kirste, R., Collazo, R., & Sitar, Z. (2022, October 25). Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 10. https://doi.org/10.1002/pssr.202200323

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. APPLIED PHYSICS LETTERS, 120(8). https://doi.org/10.1063/5.0082992

Bagheri, P., Quinones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022). High electron mobility in AlN:Si by point and extended defect management. JOURNAL OF APPLIED PHYSICS, 132(18). https://doi.org/10.1063/5.0124589

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022). Low resistivity, p-type, N-Polar GaN achieved by chemical potential control. APPLIED PHYSICS EXPRESS, 15(8). https://doi.org/10.35848/1882-0786/ac8273

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2022). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1). https://doi.org/10.1088/1361-6641/ac3710

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Kim, J. H., Kajikawa, Y., Reddy, P., … Sitar, Z. (2022). On the conduction mechanism in compositionally graded AlGaN. APPLIED PHYSICS LETTERS, 121(7). https://doi.org/10.1063/5.0100756

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. APPLIED PHYSICS EXPRESS, 15(5). https://doi.org/10.35848/1882-0786/ac6566

Rathkanthiwar, S., Dycus, J. H., Mita, S., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2022). Pseudomorphic growth of thick Al0.6Ga0.4N epilayers on AlN substrates. APPLIED PHYSICS LETTERS, 120(20). https://doi.org/10.1063/5.0092937

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022). Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17). https://doi.org/10.1063/5.0083966

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81