@article{stein_khachariya_mecouch_mita_reddy_tweedie_sierakowski_kamler_bockowski_kohn_et al._2023, title={Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing}, volume={12}, ISSN={["1557-9646"]}, url={https://doi.org/10.1109/TED.2023.3339592}, DOI={10.1109/TED.2023.3339592}, abstractNote={We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes show an ideality factor of 1.05, a turn-on voltage of ~0.7 V, a current rectification ratio of $\sim 10^{11}$ , and a low differential specific ON-resistance that scales with Schottky stripe width in fair agreement with the analytical model. The reverse leakage dependence on Schottky stripe width also agrees well with the analytical model. Implanted p-n junction diodes fabricated on the same wafer exhibit avalanche breakdown in reverse bias with a positive temperature coefficient, but the forward current is limited by a series barrier. Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a p-Schottky contact and forms a second diode back-to-back with the p-n junction. This interpretation is supported by analysis of the capacitance–voltage characteristics of the implanted p-n diodes, epitaxial p-n diodes fabricated with intentional p-Schottky contacts, and comparison to TCAD simulations. Ultimately, the presence of the p-Schottky contact does not hinder JBS diode operation. The use of diffusion-aware designs and/or diffusion reduction represents future directions for Mg implantation technology in GaN power devices.}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Stein, Shane R. and Khachariya, Dolar and Mecouch, Will and Mita, Seiji and Reddy, Pramod and Tweedie, James and Sierakowski, Kacper and Kamler, Grzegorz and Bockowski, Michal and Kohn, Erhard and et al.}, year={2023}, month={Dec} }
 @article{stein_khachariya_mita_breckenridge_tweedie_reddy_sierakowski_kamler_bockowski_kohn_et al._2023, title={Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor}, volume={16}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/acc443}, abstractNote={Abstract}, number={3}, journal={APPLIED PHYSICS EXPRESS}, author={Stein, Shane R. and Khachariya, Dolar and Mita, Seiji and Breckenridge, M. Hayden and Tweedie, James and Reddy, Pramod and Sierakowski, Kacper and Kamler, Grzegorz and Bockowski, Michal and Kohn, Erhard and et al.}, year={2023}, month={Mar} }
 @article{stein_khachariya_pavlidis_2022, title={Design and performance analysis of GaN vertical JFETs with ion-implanted gates}, volume={37}, ISSN={["1361-6641"]}, DOI={10.1088/1361-6641/ac9d00}, abstractNote={Abstract}, number={12}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Stein, Shane R. and Khachariya, Dolar and Pavlidis, Spyridon}, year={2022}, month={Dec} }
 @article{khachariya_stein_mecouch_breckenridge_rathkanthiwar_mita_moody_reddy_tweedie_kirste_et al._2022, title={Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing}, volume={15}, ISSN={["1882-0786"]}, DOI={10.35848/1882-0786/ac8f81}, abstractNote={Abstract}, number={10}, journal={APPLIED PHYSICS EXPRESS}, author={Khachariya, Dolar and Stein, Shane and Mecouch, Will and Breckenridge, M. Hayden and Rathkanthiwar, Shashwat and Mita, Seiji and Moody, Baxter and Reddy, Pramod and Tweedie, James and Kirste, Ronny and et al.}, year={2022}, month={Oct} }
 @article{stein_robbins_reddy_collazo_pavlidis_2021, title={UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators}, ISSN={["2164-2958"]}, DOI={10.1109/RWS50353.2021.9360392}, abstractNote={We present the first investigation of AlGaN/GaN HEMTs as optically-controlled microwave semiconductor devices for use in next-generation, high-power microwave photonics systems. Measurements show a modest change in S21 in the presence of UV illumination that induces internal photoconductive and photovoltaic effects. This contrasts with the significant shift in the measured gate capacitance, which can be used to tune future oscillators. This is investigated through the design of a 2.4 GHz Pierce oscillator with an optical tuning range of 3 MHz.}, journal={2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS)}, author={Stein, Shane and Robbins, Max and Reddy, Pramod and Collazo, Ramon and Pavlidis, Spyridon}, year={2021}, pages={168–170} }