Shane Stein Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592 Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023). Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor. APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443 Stein, S. R., Khachariya, D., & Pavlidis, S. (2022). Design and performance analysis of GaN vertical JFETs with ion-implanted gates. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12). https://doi.org/10.1088/1361-6641/ac9d00 Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. APPLIED PHYSICS EXPRESS, 15(10). https://doi.org/10.35848/1882-0786/ac8f81 Stein, S., Robbins, M., Reddy, P., Collazo, R., & Pavlidis, S. (2021). UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators. 2021 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), pp. 168–170. https://doi.org/10.1109/RWS50353.2021.9360392