@inproceedings{sinha_cheng_parmar_hopkins_2023, title={Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates}, ISSN={["1048-2334"]}, url={http://dx.doi.org/10.1109/apec43580.2023.10131488}, DOI={10.1109/APEC43580.2023.10131488}, abstractNote={Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.}, booktitle={2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}, publisher={IEEE}, author={Sinha, Sourish S. and Cheng, Tzu-Hsuan and Parmar, Keval and Hopkins, Douglas C.}, year={2023}, month={Mar}, pages={2596–2603} }
 @inproceedings{zaghari_sinha_ryu_franzon_hopkins_2023, title={Thermal Cycling and Fatigue Life Analysis of a Laterally Conducting GaN-based Power Package}, ISSN={["2164-0157"]}, url={http://dx.doi.org/10.1109/3dic57175.2023.10154901}, DOI={10.1109/3DIC57175.2023.10154901}, abstractNote={Thermal reliability is a critical factor in ensuring the performance and efficiency of GaN-based electronic devices. In this paper, the fatigue life assessment of a laterally conducting GaN power package that uses a two-solder hierarchy of SAC305 and Sn63/Pb37 on a 120μm thick dielectric for device attach was conducted using an FEA. The double-sided package structure also introduced thick Cu as integrated baseplate layers for mechanical mounting into higher packaging levels while providing surfaces for double-sided cooling. The internal structure varied spacer thicknesses for planarization and inclusion of package-integrated decoupling capacitors. The solder materials were simulated by using the Anand viscoplastic constitutive model. Coffin-Manson, Engelmaier, and Solomon empirical strain-based models were utilized to predict the cyclic life of the package. Based on the results, the critical solder joint location was predicted in the Sn63/Pb37 solder layer between the GaN and Cu spacer, with a strain range of 0.02797. The worst-case life prediction for the module was 150 cycles using the Coffin-Manson model.}, booktitle={2023 IEEE International 3D Systems Integration Conference (3DIC)}, publisher={IEEE}, author={Zaghari, Pouria and Sinha, Sourish S. and Ryu, Jong Eun and Franzon, Paul D. and Hopkins, Douglas C.}, year={2023}, month={May} }