Works (3)

Updated: April 11th, 2023 10:13

2016 conference paper

Physics understanding of high temperature behavior of gallium nitride power transistor

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda), 324โ€“327.

By: S. Wang n, F. Xue n, A. Huang n & S. Liuโ€‰*

co-author countries: China ๐Ÿ‡จ๐Ÿ‡ณ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147โ€“149.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra nโ€‰ & A. Huang n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269โ€“272.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra nโ€‰, A. Huang n & Y. Choi*

co-author countries: Korea (Republic of) ๐Ÿ‡ฐ๐Ÿ‡ท United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018