Works (3)

2016 conference paper

Physics understanding of high temperature behavior of gallium nitride power transistor

In 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda) (pp. 324–327).

By: S. Wang, F. Xue, A. Huang & S. Liu

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

In WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 147–149).

By: I. Ji, B. Lee, S. Wang, V. Misra & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

In Proceedings of the international symposium on power semiconductor (pp. 269–272).

By: I. Ji, B. Lee, S. Wang, V. Misra, A. Huang & Y. Choi

Source: NC State University Libraries
Added: August 6, 2018