Works (3)
2016 article
Physics understanding of high temperature behavior of Gallium Nitride power transistor
Wang, S., Xue, F., Huang, A. Q., & Liu, S. (2016, November 1).
2015 article
A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application
Ji, I.-H., Lee, B., Wang, S., Misra, V., & Huang, A. Q. (2015, November 1). WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 147–149.
2014 article
High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability
Ji, I.-H., Lee, B., Wang, S., Misra, V., Huang, A. Q., & Choi, Y.-H. (2014, June 1). Proceedings of the International Symposium on Power Semiconductor, pp. 269–272.