Thomas A. Rawdanowicz

Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Jr., Rawdanowicz, T. A., Liu, Y., White, R. M., & Iyer, S. (2016). Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(2). https://doi.org/10.1116/1.4943600

Seifikar, S., Rawdanowicz, T., Straka, W., Quintero, C., Bassiri-Gharb, N., & Schwartz, J. (2014). Structural and magnetic properties of sol-gel derived NiFe2O4 thin films on silicon substrates. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 361, 255–261. https://doi.org/10.1016/j.jmmm.2014.03.004

Seifikar, S., Tabei, A., Sachet, E., Rawdanowicz, T., Bassiri-Gharb, N., & Schwartz, J. (2012). Growth of (111) oriented NiFe2O4 polycrystalline thin films on Pt(111) via sol-gel processing. JOURNAL OF APPLIED PHYSICS, 112(6). https://doi.org/10.1063/1.4752725

Bharatan, S., Iyer, S., Li, J., Rawdanowicz, T. A., & Reynolds, L., Jr. (2011). Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(3). https://doi.org/10.1116/1.3555368

Rawdanowicz, T. A., & Narayan, J. (2004). Epitaxial GaN on Si(111): Process control of SiNx interlayer formation. APPLIED PHYSICS LETTERS, 85(1), 133–135. https://doi.org/10.1063/1.1771803

Rawdanowicz, T. A., Iyer, S., Mitchel, W. C., Saxler, A., & Elhamri, S. (2002). Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS, 92(1), 296–301. https://doi.org/10.1063/1.1476086