@inproceedings{sinha_cheng_parmar_hopkins_2023, title={Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates}, ISSN={["1048-2334"]}, url={http://dx.doi.org/10.1109/apec43580.2023.10131488}, DOI={10.1109/APEC43580.2023.10131488}, abstractNote={Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120µm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with $dv/dt$ of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.}, booktitle={2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}, publisher={IEEE}, author={Sinha, Sourish S. and Cheng, Tzu-Hsuan and Parmar, Keval and Hopkins, Douglas C.}, year={2023}, month={Mar}, pages={2596–2603} }
 @inproceedings{narwal_rawat_kanale_cheng_agarwal_bhattacharya_baliga_hopkins_2023, title={Analysis and Characterization of Four-quadrant Switches based Commutation Cell}, volume={2023-March}, ISSN={["1048-2334"]}, url={http://dx.doi.org/10.1109/apec43580.2023.10131312}, DOI={10.1109/APEC43580.2023.10131312}, abstractNote={A four-quadrant switch (FQS) blocks either polarity voltage and controls current flow in both directions. Unlike voltage-source converters, in which two-quadrant switches operate over a narrow voltage range, four-quadrant switches are required to operate over a wide range of both voltage and current in applications such as matrix converters and current-source converters. Furthermore, matrix converters require multi-step commutation schemes compared to two-step schemes for current-bidirectional switch based voltage-source converters and voltage-bidirectional switch based current-source converters. This paper provides a generalized overview of commutation schemes used for two and four quadrant switches based two-level commutation cells, identifies comparison indices for FQS commutation schemes, and discusses the need for adaptive commutation-step times for wide voltage and current variation applications. Also, the static and dynamic characteristics of 1.2 kV rated FQS implementations utilizing commercial SiC MOSFETs from four different manufacturers and novel monolithic SiC BiDirectional Field Effect Transistor (BiDFET) have been reported.}, booktitle={2023 IEEE Applied Power Electronics Conference and Exposition (APEC)}, publisher={IEEE}, author={Narwal, Ramandeep and Rawat, Shubham and Kanale, Ajit and Cheng, Tzu-Hsuan and Agarwal, Aditi and Bhattacharya, Subhashish and Baliga, B. Jayant and Hopkins, Douglas C.}, year={2023}, month={Mar}, pages={209–216} }
 @article{bhattacharya_narwal_shah_baliga_agarwal_kanale_han_hopkins_cheng_2023, title={Power Conversion Systems Enabled by SiC BiDFET Device}, volume={10}, ISSN={["2329-9215"]}, url={https://doi.org/10.1109/MPEL.2023.3237060}, DOI={10.1109/MPEL.2023.3237060}, abstractNote={The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.}, number={1}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Bhattacharya, Subhashish and Narwal, Ramandeep and Shah, Suyash Sushilkumar and Baliga, B. Jayant and Agarwal, Aditi and Kanale, Ajit and Han, Kijeong and Hopkins, Douglas C. and Cheng, Tzu-Hsuan}, year={2023}, month={Mar}, pages={39–43} }
 @article{baliga_hopkins_bhattacharya_agarwal_cheng_narwal_kanale_shah_han_2023, title={The BiDFET Device and Its Impact on Converters}, volume={10}, ISSN={["2329-9215"]}, url={https://doi.org/10.1109/MPEL.2023.3237059}, DOI={10.1109/MPEL.2023.3237059}, abstractNote={The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable d.c. link capacitors used in the popular voltage-source inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems.}, number={1}, journal={IEEE POWER ELECTRONICS MAGAZINE}, author={Baliga, B. Jayant and Hopkins, Douglas and Bhattacharya, Subhashish and Agarwal, Aditi and Cheng, Tzu-Hsuan and Narwal, Ramandeep and Kanale, Ajit and Shah, Suyash Sushilkumar and Han, Kijeong}, year={2023}, month={Mar}, pages={20–27} }
 @misc{kanale_cheng_narwal_agarwal_baliga_bhattacharya_hopkins_2022, title={Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems}, ISSN={["2329-3721"]}, url={http://dx.doi.org/10.1109/ECCE50734.2022.9947715}, DOI={10.1109/ECCE50734.2022.9947715}, abstractNote={Bidirectional switches are essential for cycloconverter and matrix converter applications to facilitate single-stage AC-AC conversion without intermediate energy storage elements. The 1.2 kV 4H-SiC BiDFET was developed as the first monolithic bidirectional SiC power transistor. This paper describes the design considerations taken into account while creating the BiDFET device and developing custom packages for housing the switch in discrete form for low power applications and in module form for high-power applications. The realized switches are characterized for their on-state and switching performance. The versatility of the BiDFET device is demonstrated by operating a single BiDFET H-bridge in voltage-source-inverter and current-source-inverter topologies only by varying the gate bias on the individual BiDFETs and reversing the input-output connections.}, journal={2022 IEEE Energy Conversion Congress and Exposition (ECCE)}, publisher={IEEE}, author={Kanale, Ajit and Cheng, Tzu-Hsuan and Narwal, Ramandeep and Agarwal, Aditi and Baliga, B. Jayant and Bhattacharya, Subhashish and Hopkins, Douglas C.}, year={2022}, month={Oct} }
 @inproceedings{kanale_narasimhan_cheng_agarwal_shah_baliga_bhattacharya_hopkins_2021, title={Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies}, ISBN={9781665401821}, url={http://dx.doi.org/10.1109/WiPDA49284.2021.9645130}, DOI={10.1109/WiPDA49284.2021.9645130}, abstractNote={Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1. 17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1. 52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.}, booktitle={2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, publisher={IEEE}, author={Kanale, Ajit and Narasimhan, Sneha and Cheng, Tzu-Hsuan and Agarwal, Aditi and Shah, Suyash Sushilkumar and Baliga, B. Jayant and Bhattacharya, Subhashish and Hopkins, Douglas C.}, year={2021}, pages={112–117} }
 @article{shah_narwal_bhattacharya_kanale_cheng_mehrotra_agarwal_baliga_hopkins_2021, title={Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications}, ISSN={["2329-3721"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-85123361428&partnerID=MN8TOARS}, DOI={10.1109/ECCE47101.2021.9595533}, abstractNote={Grid interface power conversion systems for commercial, industrial and residential solar power generation are becoming ubiquitous due to the competitive cost of solar energy. The AC/DC dual active bridge (DAB) converter is an upcoming topology in industrial PV energy and energy storage applications, providing bidirectional power transfer and galvanic isolation. In this paper, the properties of a DAB-type converter are leveraged to propose a design optimization process. It can optimize the high-frequency RMS current, size of magnetic elements and zero-voltage-switching (ZVS) region of the converter. The resulting design is compared against that derived from a conventional approach. In addition, an algorithm to compute the harmonic currents at the DC and line frequency AC ports of the system is proposed, and the respective filter designs are presented. The optimized design of the AC/DC DAB converter is implemented using the newly developed, 1200 V, $46 \mathrm{m}\Omega$, four quadrant, SiC-based monolithic bidirectional FETs (BiDFET). Experimental results from the 2.3 kW, $400\mathrm{V}/277\mathrm{V}_{{\mathrm {RMS}}}$ hardware prototype are finally presented to verify the design process.}, journal={2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)}, author={Shah, Suyash Sushilkumar and Narwal, Ramandeep and Bhattacharya, Subhashish and Kanale, Ajit and Cheng, Tzu-Hsuan and Mehrotra, Utkarsh and Agarwal, Aditi and Baliga, B. Jayant and Hopkins, Douglas C.}, year={2021}, pages={568–575} }
 @inproceedings{kanale_cheng_shah_han_agarwal_baliga_hopkins_bhattacharya_2021, title={Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes}, ISBN={9781728189499}, ISSN={["1048-2334"]}, url={http://dx.doi.org/10.1109/apec42165.2021.9487410}, DOI={10.1109/APEC42165.2021.9487410}, abstractNote={The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.}, booktitle={2021 IEEE Applied Power Electronics Conference and Exposition (APEC)}, publisher={IEEE}, author={Kanale, Ajit and Cheng, Tzu-Hsuan and Shah, Suyash Sushilkumar and Han, Kijeong and Agarwal, Aditi and Baliga, B. Jayant and Hopkins, Douglas and Bhattacharya, Subhashish}, year={2021}, month={Jun}, pages={1267–1274} }