@article{mcafee_gann_guan_stuart_rowe_dougherty_ade_2014, title={Toward Single-Crystal Hybrid-Carbon Electronics: Impact of Graphene Substrate Defect Density on Copper Phthalocyanine Film Growth}, volume={14}, ISSN={["1528-7505"]}, DOI={10.1021/cg500504u}, abstractNote={Graphene has long been recognized as a potential replacement for indium tin oxide as a transparent conducting substrate that may not only be cheaper to manufacture but also may provide mechanical flexibility and templating for preferential organic film growth. Here, we report the discovery that the thin film growth mode and crystal structure of copper phthalocyanine (CuPc), a prototype organic semiconductor, is extremely sensitive to even atomic-scale defects (e.g., steps) on the graphene surface and that high quality films can be grown with a well-defined crystal orientation that should be favorable for optimized solar cell applications. The initial growth involves flat-lying copper phthalocyanine molecules in a triclinic brickstone crystal with (012) orientation. Thicker films on pristine graphite, as well as thin films on lower quality graphene, show an orientational transition to the flat-lying (112)-oriented brickstone, which nucleates near film defects and grows in more compact 3D islands. The thi...}, number={9}, journal={CRYSTAL GROWTH & DESIGN}, author={McAfee, Terry and Gann, Eliot and Guan, Tianshuai and Stuart, Sean C. and Rowe, Jack and Dougherty, Daniel B. and Ade, Harald}, year={2014}, month={Sep}, pages={4394–4401} }