Tania Paskova

Tran, D. Q., Paskova, T., Darakchieva, V., & Paskov, P. P. (2023). On the thermal conductivity anisotropy in wurtzite GaN. AIP ADVANCES, 13(9). https://doi.org/10.1063/5.0167866

Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3). Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1<bold>-</bold>xN: Effect of layer thickness" [Appl. Phys. Lett. <bold>117</bold>, 252102 (2020)]. APPLIED PHYSICS LETTERS, Vol. 118. https://doi.org/10.1063/5.0054625

Blumenschein, N., Kadlec, C., Romanyuk, O., Paskova, T., Muth, J. F., & Kadlec, F. (2020). Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy. JOURNAL OF APPLIED PHYSICS, 127(16). https://doi.org/10.1063/1.5143735

Tran, D. Q., Delgado-Carrasco, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2020). Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness. APPLIED PHYSICS LETTERS, 117(25). https://doi.org/10.1063/5.0031404

Blumenschein, N., Paskova, T., & Muth, J. F. (2019). Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20). https://doi.org/10.1002/pssa.201900098

Gleco, S., Romanyuk, O., Gordeev, I., Kuldova, K., Paskova, T., & Ivanisevic, A. (2019). Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments. ACS OMEGA, 4(7), 11760–11769. https://doi.org/10.1021/acsomega.9b01467

Adams, W. T., Vinueza, N. R., Romanyuk, O., Gordeev, I., Paskova, T., & Ivanisevic, A. (2019). Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes. AIP ADVANCES, 9(2). https://doi.org/10.1063/1.5080353

Blumenschein, N. A., Moser, N. A., Heller, E. R., Miller, N. C., Green, A. J., Popp, A., … Jessen, G. H. (2020). Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211. https://doi.org/10.1109/TED.2019.2951502

Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15). Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3. PHYSICA B-CONDENSED MATTER, Vol. 579. https://doi.org/10.1016/j.physb.2019.411810

Snyder, P. J., Davis, H., Berg, N. G., Pearce, B., Romanyuk, O., Jiricek, P., … Ivanisevic, A. (2019). Passivation of semipolar (10-1-1) GaN with different organic adsorbates. MATERIALS LETTERS, 236, 201–204. https://doi.org/10.1016/j.matlet.2018.10.109

Blumenschein, N., Slomski, M., Paskov, P. P., Kaess, F., Breckenridge, M. H., Muth, J. F., & Paskova, T. (2018). Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique. OXIDE-BASED MATERIALS AND DEVICES IX, Vol. 10533. https://doi.org/10.1117/12.2288267

Slomski, M., Blumenschein, N., Paskov, P. P., Muth, J. F., & Paskova, T. (2017). Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants. JOURNAL OF APPLIED PHYSICS, 121(23). https://doi.org/10.1063/1.4986478

Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., & Paskova, T. (2017). Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures - theory and experiment. AIP ADVANCES, 7(9). https://doi.org/10.1063/1.4989626

Bartos, I., Romanyuk, O., Paskova, T., & Jiricek, P. (2017). Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces. SURFACE SCIENCE, 664, 241–245. https://doi.org/10.1016/j.susc.2017.07.003

Slomski, M., Paskov, P. P., Leach, J. H., Muth, J. F., & Paskova, T. (2017, August). Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 254. https://doi.org/10.1002/pssb.201600713

Bartos, I., Romanyuk, O., Houdkova, J., Paskov, P. P., Paskova, T., & Jiricek, P. (2016). Electron band bending of polar, semipolar and non-polar GaN surfaces. JOURNAL OF APPLIED PHYSICS, 119(10). https://doi.org/10.1063/1.4943592

Bartoš, I., Romanyuk, O., Houdkova, J., Paskov, P. P., Paskova, T., & Jiříček, P. (2016). Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]. Journal of Applied Physics, 119(15), 159901. https://doi.org/10.1063/1.4947183

Romanyuk, O., Bartos, I., Brault, J., De Mierry, P., Paskova, T., & Jiricek, P. (2016). GaN quantum dot polarity determination by X-ray photoelectron diffraction. APPLIED SURFACE SCIENCE, 389, 1156–1160. https://doi.org/10.1016/j.apsusc.2016.07.169

Qiu, R., Caneau, C., & Paskova, T. (2016, October 15). Preface. JOURNAL OF CRYSTAL GROWTH, Vol. 452, pp. VIII-VIII. https://doi.org/10.1016/s0022-0248(16)30490-0

Freitas, J. A., Jr., Paskova, T., Bockowski, M., & Fujioka, H. (2016, December 15). Preface: Bulk nitride workshop 2015. JOURNAL OF CRYSTAL GROWTH, Vol. 456, pp. 1–1. https://doi.org/10.1016/j.jcrysgro.2016.09.034

Berg, N. G., Paskova, T., & Ivanisevic, A. (2017). Tuning the biocompatibility of aluminum nitride. MATERIALS LETTERS, 189, 1–4. https://doi.org/10.1016/j.matlet.2016.11.041

Pearce, B. L., Wilkins, S. J., Paskova, T., & Ivanisevic, A. (2015). [Review of A review of in situ surface functionalization of gallium nitride via beaker wet chemistry]. JOURNAL OF MATERIALS RESEARCH, 30(19), 2859–2870. https://doi.org/10.1557/jmr.2015.132

Wilkins, S. J., Paskova, T., Reynolds, C. L., Jr., & Ivanisevic, A. (2015). Comparison of the Stability of Functionalized GaN and GaP. CHEMPHYSCHEM, 16(8), 1687–1694. https://doi.org/10.1002/cphc.201500105

Wilkins, S. J., Slomski, M. J., Paskova, T., Weyher, J. L., & Ivanisevic, A. (2015). Modulated optical sensitivity with nanostructured gallium nitride. APPLIED PHYSICS LETTERS, 106(15). https://doi.org/10.1063/1.4918739

Redwing, J., Lences, Z., Xie, R.-J., & Paskova, T. (2015, October 14). NITRIDES AND OXYNITRIDE MATERIALS Introduction. JOURNAL OF MATERIALS RESEARCH, Vol. 30, pp. 2845–2845. https://doi.org/10.1557/jmr.2015.303

Romanyuk, O., Fernandez-Garrido, S., Jiricek, P., Bartos, I., Geelhaar, L., Brandt, O., & Paskova, T. (2015). Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction. APPLIED PHYSICS LETTERS, 106(2). https://doi.org/10.1063/1.4905651

Romanyuk, O., Jiricek, P., Paskova, T., & Bartos, I. (2015). Polarity of GaN with polar {0001} and semipolar {10(1)over-bar1}, {20(2)over-bar1}, {11(2)over-bar2} orientations by x-ray photoelectron diffraction. JOURNAL OF MATERIALS RESEARCH, 30(19), 2881–2892. https://doi.org/10.1557/jmr.2015.153

Wilkins, S. J., Greenough, M., Arellano, C., Paskova, T., & Ivanisevic, A. (2014). In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching. Langmuir, 30(8), 2038–2046. https://doi.org/10.1021/LA404511B

Wilkins, S. J., Paskova, T., & Ivanisevic, A. (2015). Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids. APPLIED SURFACE SCIENCE, 327, 498–503. https://doi.org/10.1016/j.apsusc.2014.11.179

Wilkins, S. J., Paskova, T., & Ivanisevic, A. (2014). Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid. APPLIED SURFACE SCIENCE, 295, 207–213. https://doi.org/10.1016/j.apsusc.2014.01.035

Romanyuk, O., Jiricek, P., Paskova, T., & Bartos, I. (2014). Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{10(1)over-bar1} and GaN{20(2)over-bar1} surfaces. JOURNAL OF APPLIED PHYSICS, 116(10). https://doi.org/10.1063/1.4894708

Freitas, J. A., Jr., Meissner, E., Paskova, T., & Miyake, H. (2014, October 1). Preface. JOURNAL OF CRYSTAL GROWTH, Vol. 403, pp. 1–2. https://doi.org/10.1016/j.jcrysgro.2014.07.001

Berg, N. G., Nolan, M. W., Paskova, T., & Ivanisevic, A. (2014). Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution. Langmuir, 30(51), 15477–15485. https://doi.org/10.1021/la5040245

Ishmael, S. A., Slomski, M., Luo, H., White, M., Hunt, A., Mandzy, N., … Schwartz, J. (2014). Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 27(9). https://doi.org/10.1088/0953-2048/27/9/095018

Bain, L. E., Jewett, S. A., Mukund, A. H., Bedair, S. M., Paskova, T. M., & Ivanisevic, A. (2013). Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces. ACS Applied Materials & Interfaces, 5(15), 7236–7243. https://doi.org/10.1021/AM4015555

Wilkins, S. J., Paskova, T., & Ivanisevic, A. (2013). Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation. JOURNAL OF APPLIED PHYSICS, 114(6). https://doi.org/10.1063/1.4817899

Romanyuk, O., Jiricek, P., Paskova, T., Bieloshapka, I., & Bartos, I. (2013). GaN polarity determination by photoelectron diffraction. APPLIED PHYSICS LETTERS, 103(9). https://doi.org/10.1063/1.4819761

Bain, L. E., Hosalli, A. M., Bedair, S. M., Paskova, T., & Ivanisevic, A. (2014). Molecular Interactions on InxGa1−xN. In G. Shaw III, B. C. Prorok, L. V. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114). https://doi.org/10.1007/978-3-319-00780-9_14

Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. (2013). Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy. JOURNAL OF CRYSTAL GROWTH, 367, 88–93. https://doi.org/10.1016/j.jcrysgro.2012.12.039

Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., … Kuball, M. (2013). Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges. APPLIED PHYSICS LETTERS, 103(19). https://doi.org/10.1063/1.4829062

Liu, F., Huang, L., Kamaladasa, R., Picard, Y. N., Preble, E. A., Paskova, T., … Porter, L. M. (2014). Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates. Journal of Crystal Growth, 387, 16–22. https://doi.org/10.1016/J.JCRYSGRO.2013.10.026

Roberts, A. T., Mohanta, A., Everitt, H. O., Leach, J. H., Broeck, D., Hosalli, A. M., … Bedair, S. M. (2013). Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates. APPLIED PHYSICS LETTERS, 103(18). https://doi.org/10.1063/1.4827536

Bliss, D., Dupuis, R., Wang, C., Paskova, T., Qiu, R., Bhat, R., & Caneau, C. (2014, May 1). The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy Preface. JOURNAL OF CRYSTAL GROWTH, Vol. 393, pp. 1–1. https://doi.org/10.1016/j.jcrysgro.2013.12.025

Storm, D. F., Deen, D. A., Katzer, D. S., Meyer, D. J., Binari, S. C., Gougousi, T., … Smith, D. J. (2013). Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates. Journal of Crystal Growth, 380, 14–17. https://doi.org/10.1016/J.JCRYSGRO.2013.05.029

Ščajev, P., Jarašiūnas, K., Özgür, Ü., Morkoç, H., Leach, J., & Paskova, T. (2012). Anisotropy of free-carrier absorption and diffusivity in m-plane GaN. Applied Physics Letters, 100(2), 022112. https://doi.org/10.1063/1.3674306

Gladkov, P., Hulicius, E., Paskova, T., Preble, E., & Evans, K. R. (2012). Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe. Applied Physics Letters, 100(3), 031908. https://doi.org/10.1063/1.3678195

Dashdorj, J., Zvanut, M. E., Harrison, J. G., Udwary, K., & Paskova, T. (2012). Charge transfer in semi-insulating Fe-doped GaN. JOURNAL OF APPLIED PHYSICS, 112(1). https://doi.org/10.1063/1.4732352

McNamara, J. D., Foussekis, M. A., Baski, A. A., Li, X., Avrutin, V., Morkoç, H., … Reshchikov, M. A. (2012). Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence. Physica Status Solidi (c), 10(3), 536–539. https://doi.org/10.1002/pssc.201200662

Stark, C. J. M., Detchprohm, T., Zhao, L., Paskova, T., Preble, E. A., & Wetzel, C. (2012). Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction. Applied Physics Letters, 101(23), 232106. https://doi.org/10.1063/1.4769442

Huang, L., Liu, F., Zhu, J., Kamaladasa, R., Preble, E. A., Paskova, T., … Davis, R. F. (2012). Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates. Journal of Crystal Growth, 347(1), 88–94. https://doi.org/10.1016/j.jcrysgro.2012.03.002

Edmunds, C., Tang, L., Li, D., Cervantes, M., Gardner, G., Paskova, T., … Malis, O. (2012). Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates. Journal of Electronic Materials, 41(5), 881–886. https://doi.org/10.1007/S11664-011-1881-9

Romanyuk, O., Jiricek, P., & Paskova, T. (2012). Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction. Surface Science, 606(7-8), 740–743. https://doi.org/10.1016/j.susc.2012.01.002

Killat, N., Montes, M., Pomeroy, J. W., Paskova, T., Evans, K. R., Leach, J., … Kuball, M. (2012). Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates. IEEE ELECTRON DEVICE LETTERS, 33(3), 366–368. https://doi.org/10.1109/led.2011.2179972

Meissner, E., Schweigard, S., Friedrich, J., Paskova, T., Udwary, K., Leibiger, G., & Habel, F. (2012). Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN. Journal of Crystal Growth, 340(1), 78–82. https://doi.org/10.1016/j.jcrysgro.2011.12.043

Dumcenco, D. O., Levcenco, S., Huang, Y. S., Reynolds, C. L., Jr., Reynolds, J. G., Tiong, K. K., … Evans, K. R. (2011). Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy. JOURNAL OF APPLIED PHYSICS, 109(12). https://doi.org/10.1063/1.3592343

Romanyuk, O., Jiricek, P., Zemek, J., Tougaard, S., & Paskova, T. (2011). Dielectric response functions of the (0001¯), (101¯3) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy. Journal of Applied Physics, 110(4), 043507. https://doi.org/10.1063/1.3622674

Eichfeld, S. M., Won, D., Trumbull, K., Labella, M., Weng, X., Robinson, J., … Evans, K. R. (2011). Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates. Physica Status Solidi (c), 8(7-8), 2053–2055. https://doi.org/10.1002/pssc.201001059

Wang, Y., Xu, H., Alur, S., Sharma, Y., Tong, F., Gartland, P., … Evans, K. R. (2011). Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer. Physica Status Solidi (c), 8(7-8), 2430–2432. https://doi.org/10.1002/pssc.201001158

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Liu, G., Zhang, J., Li, X.-H., Huang, G. S., Paskova, T., Evans, K. R., … Tansu, N. (2012). Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. JOURNAL OF CRYSTAL GROWTH, 340(1), 66–73. https://doi.org/10.1016/j.jcrysgro.2011.12.037

Li, X., Ni, X., Liu, H. Y., Zhang, F., Liu, S., Lee, J., … Morkoç, H. (2011). On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes. Physica Status Solidi (c), 8(5), 1560–1563. https://doi.org/10.1002/pssc.201000893

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). Overgrowth of GaN on GaN nanowires produced by mask-less etching. JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208. https://doi.org/10.1016/j.jcrysgro.2011.12.055

Monemar, B., Paskov, P., Pozina, G., Hemmingsson, C., Bergman, P., Lindgren, D., … Ohlsson, J. (2011). Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates. Physica Status Solidi (a), 208(7), 1532–1534. https://doi.org/10.1002/pssa.201001036

Mareš, J. J., Hubík, P., Krištofik, J., Prušáková, L., Uxa, Š., Paskova, T., & Evans, K. (2011). Radial space-charge-limited electron flow in semi-insulating GaN:Fe. Journal of Applied Physics, 110(1), 013723. https://doi.org/10.1063/1.3609071

Leach, J. H., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., … Lu, C.-Z. (2010). Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates. Applied Physics Letters, 96(10), 102109. https://doi.org/10.1063/1.3358192

Detchprohm, T., Zhu, M., You, S., Li, Y., Zhao, L., Preble, E. A., … Wetzel, C. (2010). Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate. Physica Status Solidi (c), 7(7-8), 2190–2192. https://doi.org/10.1002/pssc.200983611

Kadlec, F., Kadlec, C., Paskova, T., & Evans, K. (2010). Effect of Fe doping on the terahertz conductivity of GaN single crystals. Journal of Physics D: Applied Physics, 43(14), 145401. https://doi.org/10.1088/0022-3727/43/14/145401

Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., … Evans, K. R. (2010). Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates. Applied Physics Letters, 96(13), 133505. https://doi.org/10.1063/1.3358392

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905. https://doi.org/10.1016/j.jcrysgro.2010.01.020

Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., … Evans, K. R. (2010). InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes. Applied Physics Letters, 97(3), 031110. https://doi.org/10.1063/1.3465658

Xu, H., Alur, S., Wang, Y., Cheng, A.-J., Kang, K., Sharma, Y., … Zhou, Y. (2010). In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation. Journal of Electronic Materials, 39(10), 2237–2242. https://doi.org/10.1007/S11664-010-1304-3

Monemar, B., Paskov, P. P., Pozina, G., Hemmingsson, C., Bergman, J. P., Amano, H., … Usui, A. (2010). Mg-related acceptors in GaN. Physica Status Solidi (c), 7(7-8), 1850–1852. https://doi.org/10.1002/pssc.200983436

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Jr., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., … Evans, K. R. (2010). Optimization of homoepitaxially grown AlGaN/GaN heterostructures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299. https://doi.org/10.1002/pssa.200925508

Grenko, J. A., Reynolds, C. L., Jr., Barlage, D. W., Johnson, M. A. L., Lappi, S. E., Ebert, C. W., … Evans, K. R. (2010). Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates. Journal of Electronic Materials, 39(5), 504–516. https://doi.org/10.1007/S11664-010-1153-0

Storm, D. F., Katzer, D. S., Deen, D. A., Bass, R., Meyer, D. J., Roussos, J. A., … Evans, K. R. (2010). Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures. Solid-State Electronics, 54(11), 1470–1473. https://doi.org/10.1016/j.sse.2010.05.041

Son, N. T., Hemmingsson, C. G., Morishita, N., Ohshima, T., Paskova, T., Evans, K. R., … Janzén, E. (2010). Radiation-induced defects in GaN. Physica Scripta, T141, 014015. https://doi.org/10.1088/0031-8949/2010/T141/014015

Weyher, J. L., łucznik, B., Grzegory, I., Smalc-Koziorowska, J., & Paskova, T. (2010). Revealing extended defects in HVPE-grown GaN. Journal of Crystal Growth, 312(18), 2611–2615. https://doi.org/10.1016/j.jcrysgro.2010.04.021

Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., … Evans, K. R. (2010). The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes. Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196. https://doi.org/10.1002/pssr.201004147

Wang, Y., Alur, S., Sharma, Y., Tong, F., Thapa, R., Gartland, P., … Evans, K. R. (2010). Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate. Semiconductor Science and Technology, 26(2), 022002. https://doi.org/10.1088/0268-1242/26/2/022002

Zhu, M., You, S., Detchprohm, T., Paskova, T., Preble, E. A., & Wetzel, C. (2010). Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes. Physica Status Solidi (a), 207(6), 1305–1308. https://doi.org/10.1002/pssa.200983645

Detchprohm, T., Zhu, M., Li, Y., Zhao, L., You, S., Wetzel, C., … Hanser, D. (2010). Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates. Applied Physics Letters, 96(5), 051101. https://doi.org/10.1063/1.3299257

Lai, K. Y., Johnson, M. A. L., Paskova, T., Hanser, A. D., Udwary, K., Preble, E. A., & Evans, K. R. (2009). Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing. Physica Status Solidi (c), 6(S2), S325–S328. https://doi.org/10.1002/pssc.200880891

Gladkov, P., Humlíček, J., Hulicius, E., Šimeček, T., Paskova, T., & Evans, K. (2010). Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe. Journal of Crystal Growth, 312(8), 1205–1209. https://doi.org/10.1016/j.jcrysgro.2009.11.032

Li, X., Ni, X., Lee, J., Wu, M., Özgür, Ü., Morkoç, H., … Evans, K. R. (2009). Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes. Applied Physics Letters, 95(12), 121107. https://doi.org/10.1063/1.3236538

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 106(11). https://doi.org/10.1063/1.3264729

Ni, X., Lee, J., Wu, M., Li, X., Shimada, R., Özgür, Ü., … Evans, K. R. (2009). Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN. Applied Physics Letters, 95(10), 101106. https://doi.org/10.1063/1.3224192

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Jr., Johnson, M. A. L., Hanser, A. D., Preble, E. A., … Evans, K. R. (2009). Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures. Physica Status Solidi (c), 6(S2), S1037–S1040. https://doi.org/10.1002/pssc.200880907

Lee, J., Li, X., Ni, X., Özgür, Ü., Morkoç, H., Paskova, T., … Evans, K. R. (2009). On carrier spillover in c- and m-plane InGaN light emitting diodes. Applied Physics Letters, 95(20), 201113. https://doi.org/10.1063/1.3266833

Paskov, P. P., Monemar, B., Paskova, T., Preble, E. A., Hanser, A. D., & Evans, K. R. (2009). Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces. Physica Status Solidi (c), 6(S2), S763–S766. https://doi.org/10.1002/pssc.200880918

Paskova, T., Preble, E. A., Hanser, A. D., Evans, K. R., Kröger, R., Paskov, P. P., … Johnson, M. A. L. (2009). Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics. Physica Status Solidi (c), 6(S2), S344–S347. https://doi.org/10.1002/pssc.200880912

Paskova, T. (2008). Development and prospects of nitride materials and devices with nonpolar surfaces. Physica Status Solidi (b), 245(6), 1011–1025. https://doi.org/10.1002/pssb.200743274

Lai, K. Y., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Hanser, A. D., Preble, E. A., … Evans, K. R. (2008). Enlargement of bulk non-polar GaN substrates by HVPE regrowth. Physica Status Solidi (c), 5(6), 1886–1888. https://doi.org/10.1002/pssc.200778743

Hanser, D., Liu, L., Preble, E. A., Udwary, K., Paskova, T., & Evans, K. R. (2008). Fabrication and characterization of native non-polar GaN substrates. Journal of Crystal Growth, 310(17), 3953–3956. https://doi.org/10.1016/j.jcrysgro.2008.06.029

Detchprohm, T., Zhu, M., Li, Y., Xia, Y., Wetzel, C., Preble, E. A., … Hanser, D. (2008). Green light emitting diodes on a-plane GaN bulk substrates. Applied Physics Letters, 92(24), 241109. https://doi.org/10.1063/1.2945664

Paskova, T., Becker, L., Böttcher, T., Hommel, D., Paskov, P. P., & Monemar, B. (2007). Bending in HVPE grown GaN films: origin and reduction possibilities. Physica Status Solidi (c), 4(7), 2256–2259. https://doi.org/10.1002/pssc.200674819

Tuomisto, F., Paskova, T., Kröger, R., Figge, S., Hommel, D., Monemar, B., & Kersting, R. (2007). Defect distribution in a-plane GaN on Al2O3. Applied Physics Letters, 90(12), 121915. https://doi.org/10.1063/1.2715128

Kröger, R., Paskova, T., Monemar, B., Figge, S., Hommel, D., & Rosenauer, A. (2007). Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire. Physica Status Solidi (c), 4(7), 2564–2567. https://doi.org/10.1002/pssc.200674909

Paskova, T., Becker, L., Böttcher, T., Hommel, D., Paskov, P. P., & Monemar, B. (2007). Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics, 102(12), 123507. https://doi.org/10.1063/1.2817955

Kröger, R., Paskova, T., Figge, S., Hommel, D., Rosenauer, A., & Monemar, B. (2007). Interfacial structure of a-plane GaN grown on r-plane sapphire. Applied Physics Letters, 90(8), 081918. https://doi.org/10.1063/1.2696309

Pozina, G., Monemar, B., Paskov, P. P., Hemmingsson, C., Hultman, L., Amano, H., … Usui, A. (2007). Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates. Physica B: Condensed Matter, 401-402, 302–306. https://doi.org/10.1016/j.physb.2007.08.173

Paskova, T., Kroeger, R., Hommel, D., Paskov, P. P., Monemar, B., Preble, E., … Tutor, M. (2007). Nonpolara- andm-plane bulk GaN sliced from boules: structural and optical characteristics. Physica Status Solidi (c), 4(7), 2536–2539. https://doi.org/10.1002/pssc.200674818

Darakchieva, V., Monemar, B., Paskova, T., Einfeldt, S., Hommel, D., & Lourdudoss, S. (2007). Phonons in strained AlGaN/GaN superlattices. Physica Status Solidi (c), 4(1), 170–174. https://doi.org/10.1002/pssc.200673582

Tuomisto, F., Paskova, T., Figge, S., Hommel, D., & Monemar, B. (2007). Vacancy defect distribution in heteroepitaxial -plane GaN grown by hydride vapor phase epitaxy. Journal of Crystal Growth, 300(1), 251–253. https://doi.org/10.1016/j.jcrysgro.2006.11.040

Darakchieva, V., Paskova, T., Paskov, P. P., Arwin, H., Schubert, M., Monemar, B., … Nakamura, S. (2006). Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry ona-plane GaN. Physica Status Solidi (b), 243(7), 1594–1598. https://doi.org/10.1002/pssb.200565400

Paskova, T., Darakchieva, V., Paskov, P. P., Monemar, B., Bukowski, M., Suski, T., … Hommel, D. (2006). Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing. Physica Status Solidi (c), 3(6), 1475–1478. https://doi.org/10.1002/pssc.200565412

Tuomisto, F., Hautakangas, S., Makkonen, I., Ranki, V., Puska, M. J., Saarinen, K., … Look, D. C. (2006). Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing. Physica Status Solidi (b), 243(7), 1436–1440. https://doi.org/10.1002/pssb.200565109

Darakchieva, V., Paskova, T., Schubert, M., Paskov, P. P., Arwin, H., Monemar, B., … Nakamura, S. (2007). Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers. Journal of Crystal Growth, 300(1), 233–238. https://doi.org/10.1016/j.jcrysgro.2006.11.023

Paskova, T., Hommel, D., Paskov, P. P., Darakchieva, V., Monemar, B., Bockowski, M., … Schubert, M. (2006). Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy. Applied Physics Letters, 88(14), 141909. https://doi.org/10.1063/1.2192149

Arnaudov, B., Paskova, T., Evtimova, S., Monemar, B., Lu, H., & Schaff, W. J. (2006). Electron concentration and mobility profiles in InN layers grown by MBE. Physica Status Solidi (a), 203(7), 1681–1685. https://doi.org/10.1002/pssa.200565265

Paskova, T., Kroeger, R., Figge, S., Hommel, D., Darakchieva, V., Monemar, B., … Tutor, M. (2006). High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire. Applied Physics Letters, 89(5), 051914. https://doi.org/10.1063/1.2236901

Paskov, P. P., Paskova, T., Monemar, B., Figge, S., Hommel, D., Haskell, B. A., … Nakamura, S. (2006). Optical properties of nonpolar -plane GaN layers. Superlattices and Microstructures, 40(4-6), 253–261. https://doi.org/10.1016/j.spmi.2006.06.014

Monemar, B., Paskov, P. P., Bergman, J. P., Toropov, A. A., Shubina, T. V., Figge, S., … Akasaki, I. (2006). Optical signatures of dopants in GaN. Materials Science in Semiconductor Processing, 9(1-3), 168–174. https://doi.org/10.1016/j.mssp.2006.01.075

Paskov, P. P., Schifano, R., Malinauskas, T., Paskova, T., Bergman, J. P., Monemar, B., … Nakamura, S. (2006). Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers. Physica Status Solidi (c), 3(6), 1499–1502. https://doi.org/10.1002/pssc.200565416

Roder, C., Einfeldt, S., Figge, S., Hommel, D., Paskova, T., Monemar, B., … Nakamura, S. (2006). Strain ina-plane GaN layers grown onr-plane sapphire substrates. Physica Status Solidi (a), 203(7), 1672–1675. https://doi.org/10.1002/pssa.200565447

Roder, C., Einfeldt, S., Figge, S., Paskova, T., Hommel, D., Paskov, P. P., … Nakamura, S. (2006). Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates. Journal of Applied Physics, 100(10), 103511. https://doi.org/10.1063/1.2386940

Paskov, P. P., Schifano, R., Paskova, T., Malinauskas, T., Bergman, J. P., Monemar, B., … Hommel, D. (2006). Structural defect-related emissions in nonpolar a-plane GaN. Physica B: Condensed Matter, 376-377, 473–476. https://doi.org/10.1016/j.physb.2005.12.121

Monemar, B., Paskov, P. P., Bergman, J. P., Paskova, T., Figge, S., Dennemarck, J., & Hommel, D. (2006). The dominant shallow 0.225 eV acceptor in GaN. Physica Status Solidi (b), 243(7), 1604–1608. https://doi.org/10.1002/pssb.200565425

Tuomisto, F., Saarinen, K., Paskova, T., Monemar, B., Bockowski, M., & Suski, T. (2006). Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics, 99(6), 066105. https://doi.org/10.1063/1.2180450

Monemar, B., Paskov, P. P., Bergman, J. P., Paskova, T., Hemmingsson, C., Malinauskas, T., … Beaumont, B. (2006). Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN. Physica B: Condensed Matter, 376-377, 482–485. https://doi.org/10.1016/j.physb.2005.12.123

Paskova, T., Arnaudov, B., Paskov, P. P., Goldys, E. M., Hautakangas, S., Saarinen, K., … Monemar, B. (2005). Donor-acceptor pair emission enhancement in mass-transport-grown GaN. Journal of Applied Physics, 98(3), 033508. https://doi.org/10.1063/1.1994943

Paskov, P. P., Schifano, R., Monemar, B., Paskova, T., Figge, S., & Hommel, D. (2005). Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Journal of Applied Physics, 98(9), 093519. https://doi.org/10.1063/1.2128496

Paskova, T., Darakchieva, V., Paskov, P. P., Birch, J., Valcheva, E., Persson, P. O. �., … Monemar, B. (2005). Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties. Physica Status Solidi (c), 2(7), 2027–2031. https://doi.org/10.1002/pssc.200461481

Figge, S., Böttcher, T., Dennemarck, J., Kröger, R., Paskova, T., Monemar, B., & Hommel, D. (2005). Optoelectronic devices on bulk GaN. Journal of Crystal Growth, 281(1), 101–106. https://doi.org/10.1016/j.jcrysgro.2005.03.017

Paskov, P. P., Bergman, J. P., Darakchieva, V., Paskova, T., Monemar, B., Iwaya, M., … Akasaki, I. (2005). Photoluminescence of GaN/AlN superlattices grown by MOCVD. Physica Status Solidi (c), 2(7), 2345–2348. https://doi.org/10.1002/pssc.200461367

Paskova, T., Darakchieva, V., Paskov, P. P., Birch, J., Valcheva, E., Persson, P. O. A., … Monemar, B. (2005). Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers. Journal of Crystal Growth, 281(1), 55–61. https://doi.org/10.1016/j.jcrysgro.2005.03.013

Strocov, V. N., Schmitt, T., Rubensson, J.-E., Blaha, P., Paskova, T., & Nilsson, P. O. (2004). Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN. Physica Status Solidi (b), 241(7), R27–R29. https://doi.org/10.1002/pssb.200409040

Paskova, T., Paskov, P. P., Goldys, E. M., Valcheva, E., Darakchieva, V., Södervall, U., … Monemar, B. (2004). Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy. Journal of Crystal Growth, 273(1-2), 118–128. https://doi.org/10.1016/j.jcrysgro.2004.09.025

Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Monemar, B., Schubert, M., … Schaff, W. J. (2004). Deformation potentials of the E1(TO) and E2 modes of InN. Applied Physics Letters, 84(18), 3636–3638. https://doi.org/10.1063/1.1738520

Arnaudov, B., Paskova, T., Paskov, P. P., Magnusson, B., Valcheva, E., Monemar, B., … Akasaki, I. (2004). Free-to-bound radiative recombination in highly conducting InN epitaxial layers. Superlattices and Microstructures, 36(4-6), 563–571. https://doi.org/10.1016/j.spmi.2004.09.013

Paskova, T., Darakchieva, V., Valcheva, E., Paskov, P. P., Ivanov, I. G., Monemar, B., … Hommel, D. (2004). Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending. Journal of Electronic Materials, 33(5), 389–394. https://doi.org/10.1007/S11664-004-0189-4

Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Schubert, M., Bundesmann, C., … Monemar, B. (2004). Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties. Superlattices and Microstructures, 36(4-6), 573–580. https://doi.org/10.1016/j.spmi.2004.09.014

Monemar, B., Paskov, P. P., Haradizadeh, H., Bergman, J. P., Valcheva, E., Darakchieva, V., … Akasaki, I. (2004). Optical investigation of AlGaN/GaN quantum wells and superlattices. Physica Status Solidi (a), 201(10), 2251–2258. https://doi.org/10.1002/pssa.200404849

Paskova, T., Paskov, P. P., Valcheva, E., Darakchieva, V., Birch, J., Kasic, A., … Monemar, B. (2004). Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices. Physica Status Solidi (a), 201(10), 2265–2270. https://doi.org/10.1002/pssa.200404818

Paskov, P. P., Paskova, T., Holtz, P. O., & Monemar, B. (2004). Polarized photoluminescence of exciton-polaritons in free-standing GaN. Physica Status Solidi (a), 201(4), 678–685. https://doi.org/10.1002/pssa.200304093

Darakchieva, V., Paskova, T., Paskov, P. P., Monemar, B., Ashkenov, N., & Schubert, M. (2005). Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates. Journal of Applied Physics, 97(1), 013517. https://doi.org/10.1063/1.1823024

Paskova, T., Valcheva, E., Paskov, P. P., Monemar, B., Roskowski, A. M., Davis, R. F., … Gibart, P. (2004). HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates. Diamond and Related Materials, 13(4-8), 1125–1129. https://doi.org/10.1016/j.diamond.2003.10.072