Robert Trew

Bilbro, G. L., & Trew, R. J. (2015). A Five-Parameter Model of the AlGaN/GaN HFET. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1157–1162. https://doi.org/10.1109/ted.2015.2394376

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Modeling of the Gate Leakage Current in AlGaN/GaN HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021. https://doi.org/10.1109/ted.2014.2302797

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors. JOURNAL OF APPLIED PHYSICS, 116(16). https://doi.org/10.1063/1.4900581

Hou, D., Bilbro, G. L., & Trew, R. J. (2013). A Compact Physical AlGaN/GaN HFET Model. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 639–645. https://doi.org/10.1109/ted.2012.2227323

Goswami, A., Trew, R. J., & Bilbro, G. L. (2013). Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs. SOLID-STATE ELECTRONICS, 80, 23–27. https://doi.org/10.1016/j.sse.2012.10.005

Kong, B. D., Trew, R. J., & Kim, K. W. (2013). Toward stimulated interaction of surface phonon polaritons. Journal of Applied Physics, 114(23), 233508. https://doi.org/10.1063/1.4851717

Schimizzi, R. D., Trew, R. J., & Bilbro, G. L. (2012). A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(11), 2973–2978. https://doi.org/10.1109/ted.2012.2211360

Trew, R. J., Hou, D., Schimizzi, R., Goswami, A., & Bilbro, G. L. (2012). Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design. 2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS). https://doi.org/10.1109/icwits.2012.6417696

Trew, R. J. (2012, May). Research Funding and the PROCEEDINGS OF THE IEEE Centennial. PROCEEDINGS OF THE IEEE, Vol. 100, pp. 1273–1277. https://doi.org/10.1109/jproc.2012.2190682

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2010). Large-Signal Analysis of Terahertz Generation in Submicrometer GaN Diodes. IEEE Sensors Journal, 10(3), 765–771. https://doi.org/10.1109/jsen.2009.2038132

Kong, B. D., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2010). Quasi-Coherent Thermal Emission in the Terahertz by Doped Semiconductors. IEEE Sensors Journal, 10(3), 443–450. https://doi.org/10.1109/jsen.2009.2038133

Jensen, J. O., Trew, R. J., Woolard, D. L., Gupta, N., Theriault, J.-M., Hayat, M. M., … Gillespie, P. (2010, March). Special Issue on Enhancement Algorithms, Methodologies and Technology for Spectral Sensing. IEEE SENSORS JOURNAL, Vol. 10, pp. 373–378. https://doi.org/10.1109/jsen.2010.2041385

Trew, R. J., Green, D. S., & Shealy, J. B. (2009). AlGaN/GaN HFET Reliability. IEEE MICROWAVE MAGAZINE, 10(4), 116–127. https://doi.org/10.1109/MMM.2009.932286

Bilbro, G. L., Hou, D., Yin, H., & Trew, R. J. (2009). Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model. GALLIUM NITRIDE MATERIALS AND DEVICES IV, Vol. 7216. https://doi.org/10.1117/12.803348

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2009). Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating. Applied Physics Letters, 94(22), 222106. https://doi.org/10.1063/1.3147217

Woolard, D. L., Trew, R. J., Polla, D. L., Stroscio, M. A., Varshney, U., Jensen, J., … Aono, M. (2008). Nanosensors for defense and security. IEEE SENSORS JOURNAL, Vol. 8, pp. 641–646. https://doi.org/10.1109/jsen.2008.924436

Kong, B. D., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2008). Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating. Journal of Applied Physics, 103(5), 056101. https://doi.org/10.1063/1.2840063

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2008). Terahertz generation in GaN diodes in the limited space-charge accumulation mode. Journal of Applied Physics, 103(12), 126101. https://doi.org/10.1063/1.2946717

Sokolov, V. N., Kong, B. D., Kim, K. W., & Trew, R. J. (2007). Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources. Applied Physics Letters, 90(11), 113106. https://doi.org/10.1063/1.2713166

Trew, R. J., Liu, Y. Y., Bilbro, G. L., Kuang, W. W., Vetury, R., & Shealy, J. B. (2006). Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 54(5), 2061–2067. https://doi.org/10.1109/TMTT.2006.873627

Bilbro, G. L., & Trew, R. J. (2006). RF knee walkout and source access region of unpassivated HFETs. Electronics Letters, 42(24), 1425–1427. https://doi.org/10.1049/el:20062113

Trew, R. J. (2005, May). High-frequency solid-state electronic devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 52, pp. 638–649. https://doi.org/10.1109/TED.2005.845862

Trew, R. J., Bilbro, G. L., Kuang, W., Liu, Y., & Yin, H. (2005). Microwave AlGaN/GaN HFEVs. IEEE MICROWAVE MAGAZINE, 6(1), 56–66. https://doi.org/10.1109/MMW.2005.1417998

Trew, R. J., & Woolard, D. L. (2005, October). Special issue on blue sky electronic technologies. PROCEEDINGS OF THE IEEE, Vol. 93, pp. 1687–1690. https://doi.org/10.1109/JPROC.2005.855454

Mishra, U. K., & Trew, R. J. (1993). Method of making high current, high voltage breakdown field effect transistor. Washington, DC: U.S. Patent and Trademark Office.

Mishra, U. K., & Trew, R. J. (1992). High current, high voltage breakdown field effect transistor. Washington, DC: U.S. Patent and Trademark Office.

TREW, R. J., YAN, J. B., & MOCK, P. M. (1991). THE POTENTIAL OF DIAMOND AND SIC ELECTRONIC DEVICES FOR MICROWAVE AND MILLIMETER-WAVE POWER APPLICATIONS. PROCEEDINGS OF THE IEEE, 79(5), 598–620. https://doi.org/10.1109/5.90128