Robert Trew

Bilbro, G. L., & Trew, R. J. (2015). A five-parameter model of the AlGaN/GaN HFET. IEEE Transactions on Electron Devices, 62(4), 1157–1162. https://doi.org/10.1109/ted.2015.2394376

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Modeling of the gate leakage current in AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 61(4), 1014–1021. https://doi.org/10.1109/ted.2014.2302797

Goswami, A., Trew, R. J., & Bilbro, G. L. (2014). Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors. Journal of Applied Physics, 116(16). https://doi.org/10.1063/1.4900581

Hou, D. Q., Bilbro, G. L., & Trew, R. J. (2013). A compact physical AlGaN/GaN HFET model. IEEE Transactions on Electron Devices, 60(2), 639–645. https://doi.org/10.1109/ted.2012.2227323

Goswami, A., Trew, R. J., & Bilbro, G. L. (2013). Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs. Solid-State Electronics, 80, 23–27. https://doi.org/10.1016/j.sse.2012.10.005

Kong, B. D., Trew, R. J., & Kim, K. W. (2013). Toward stimulated interaction of surface phonon polaritons. Journal of Applied Physics, 114(23). https://doi.org/10.1063/1.4851717

Schimizzi, R. D., Trew, R. J., & Bilbro, G. L. (2012). A Simplified physical model of RF channel breakdown in AlGaN/GaN HFETs. IEEE Transactions on Electron Devices, 59(11), 2973–2978. https://doi.org/10.1109/ted.2012.2211360

Trew, R. J., Hou, D., Schimizzi, R., Goswami, A., & Bilbro, G. L. (2012). Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design. 2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS). https://doi.org/10.1109/icwits.2012.6417696

Trew, R. J. (2012). Research funding and the proceedings of the IEEE centennial. Proceedings of the IEEE, 100, 1273–1277. https://doi.org/10.1109/jproc.2012.2190682

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2010). Large-signal analysis of terahertz generation in submicrometer gan diodes. IEEE Sensors Journal, 10(3), 765–771. https://doi.org/10.1109/jsen.2009.2038132

Kong, B. D., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2010). Quasi-coherent thermal emission in the terahertz by doped semiconductors. IEEE Sensors Journal, 10(3), 443–450. https://doi.org/10.1109/jsen.2009.2038133

Jensen, J. O., Trew, R. J., Woolard, D. L., Gupta, N., Theriault, J. M., Hayat, M. M., … Gillespie, P. (2010). Special issue on enhancement algorithms, methodologies and technology for spectral sensing. IEEE Sensors Journal, 10(3), 373–378. https://doi.org/10.1109/jsen.2010.2041385

Trew, R. J., Green, D. S., & Shealy, J. B. (2009). AlGaN/GaN HFET reliability. IEEE Microwave Magazine, 10(4), 116–127. https://doi.org/10.1109/MMM.2009.932286

Bilbro, G. L., Hou, D. Q., Yin, H., & Trew, R. J. (2009). Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model. Gallium nitride materials and devices iv, 7216. https://doi.org/10.1117/12.803348

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2009). Terahertz generation in GaN diodes operating in pulsed regime limited by self-heating. Applied Physics Letters, 94(22). https://doi.org/10.1063/1.3147217

Woolard, D. L., Trew, R. J., Polla, D. L., Stroscio, M. A., Varshney, U., Jensen, J., … Aono, M. (2008). Nanosensors for defense and security. IEEE Sensors Journal, 8(5-6), 641–646. https://doi.org/10.1109/jsen.2008.924436

Kong, B. D., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2008). Terahertz emission mediated by surface plasmon polaritons in doped semiconductors with surface grating. Journal of Applied Physics, 103(5). https://doi.org/10.1063/1.2840063

Barry, E. A., Sokolov, V. N., Kim, K. W., & Trew, R. J. (2008). Terahertz generation in GaN diodes in the limited space-charge accumulation mode. Journal of Applied Physics, 103(12). https://doi.org/10.1063/1.2946717

Sokolov, V. N., Kong, B. D., Kim, K. W., & Trew, R. J. (2007). Quasimonochromatic emission spectra in the near field by polar semiconductor thermal sources. Applied Physics Letters, 90(11). https://doi.org/10.1063/1.2713166

Trew, R. J., Liu, Y. Y., Bilbro, G. L., Kuang, W. W., Vetury, R., & Shealy, J. B. (2006). Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs. IEEE Transactions on Microwave Theory and Techniques, 54(5), 2061–2067. https://doi.org/10.1109/TMTT.2006.873627

Bilbro, G. L., & Trew, R. J. (2006). RF knee walkout and source access region of unpassivated HFETs. Electronics Letters, 42(24), 1425–1427. https://doi.org/10.1049/el:20062113

Trew, R. J. (2005). High-frequency solid-state electronic devices. IEEE Transactions on Electron Devices, 52(5), 638–649. https://doi.org/10.1109/TED.2005.845862

Trew, R. J., Bilbro, G. L., Kuang, W., Liu, Y., & Yin, H. (2005). Microwave AlGaN/GaN HFEVs. IEEE Microwave Magazine, 6(1), 56–66. https://doi.org/10.1109/MMW.2005.1417998

Trew, R. J., & Woolard, D. L. (2005). Special issue on blue sky electronic technologies. Proceedings of the IEEE, 93(10), 1687–1690. https://doi.org/10.1109/JPROC.2005.855454

Mishra, U. K., & Trew, R. J. (1993). Method of making high current, high voltage breakdown field effect transistor. Washington, DC: U.S. Patent and Trademark Office.

Mishra, U. K., & Trew, R. J. (1992). High current, high voltage breakdown field effect transistor. Washington, DC: U.S. Patent and Trademark Office.

Trew, R. J., Yan, J. B., & Mock, P. M. (1991). The potential of diamond and sic electronic devices for microwave and millimeter-wave power applications. Proceedings of the IEEE, 79(5), 598–620. https://doi.org/10.1109/5.90128