Works (2)

Updated: April 11th, 2023 10:13

2013 conference paper

Device characterization and performance of 1200V/45A SiC JFET module

2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013, 273–278.

By: V. Baliga n, S. Hazra n, S. Singh n, S. Roy n, S. Bhattacharya n, J. Paulakonis*, S. Notani*

co-author countries: United States of America 🇺🇸

Contributors: V. Baliga n, S. Hazra n, S. Singh n, S. Roy n, S. Bhattacharya n, J. Paulakonis*, S. Notani*

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 conference paper

Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings, 1819–1826.

co-author countries: United States of America 🇺🇸

Contributors: A. Kadavelugu n, V. Baliga n, S. Bhattacharya n, M. Das* & A. Agarwal*

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

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