@article{kumar_maan_akhtar_2020, title={Electronic transport in epitaxial 4H-SiC based Schottky diodes modified selectively by swift heavy ions}, volume={115}, ISSN={["1873-4081"]}, DOI={10.1016/j.mssp.2020.105108}, abstractNote={Modifications in the defects and electronic transport properties of epitaxial 4H-nSiC(0001) Schottky barrier diodes have been carried out by selective 200 MeV Ag+14 ions irradiation, i.e., ions projected only on the Schottky contact area of the diode using a mask. Forward bias current-voltage (I–V) characteristics are measured in temperature (T) range from 273 K to 473 K. Interestingly, the barrier height found increased from 1.20 eV to 1.35 eV at 273 K and from 1.24 eV to 1.42 eV at 348 K after selective ion irradiation. At T ≥ 373 K, double barrier height features have seen in the I–V-T plots. The reverse bias I–V characteristics are measured up to −200 V, and in T range from 298 K to 473 K. The leakage current density found decreased from 9.57 × 10-9 A/cm2 to 2.98 × 10-10 A/cm2 at 298 K and from 5.53 × 10-8 A/cm2 to 4.17 × 10-8 A/cm2 at 373 K after selective irradiation, and deteriorated after that. The defects in pristine SiC with activation energy (ΔEA) of 0.29 eV and 0.13 eV are removed and a single defect with ΔEA of 0.38 eV observed after selective ion irradiation. Moreover, asymmetries are observed in capacitance-voltage characteristics of selectively irradiated devices. Role of electronic and nuclear energy loss mechanisms have been discussed to rationalize the performance of diodes. The proposed technique may be applicable in addressing the issues related to interface and bulk level defects in advance semiconducting materials, without using high temperatures.}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, author={Kumar, Vibhor and Maan, A. S. and Akhtar, Jamil}, year={2020}, month={Aug} }
 @article{kumar_verma_maan_akhtar_2020, title={Epitaxial 4H-SiC based Schottky diode temperature sensors in ultra-low current range}, volume={182}, ISSN={["0042-207X"]}, DOI={10.1016/j.vacuum.2020.109590}, abstractNote={This work reports highly sensitive and linear temperature sensors based on epitaxial silicon carbide (SiC). Circular shaped Ni/4H-nSiC Schottky barrier diode (SBD) temperature sensors of area 3.140 mm2 have been fabricated and characterized in forward current (If) and temperature range from 10 pA to 5 nA and 233 K–473 K, respectively. The highest value of absolute thermal sensitivity |S| has been achieved as 3.425 mV/K at the lowest If = 10 pA. The sensors show best performance at If = 0.1 nA with lowest root mean square error, temperature error and highest coefficient of determination as 5.341 mV, 1.620 K and 99.96%, respectively, with |S| = 3.295 mV/K. Moreover, for If ≤ 20 pA, sensors reach their maximum operating temperature point, i.e., 448 K. The highest value of self-heating in the sensors have been calculated as 1.623 nK. Moreover, asymmetry has been observed between experimental and the theoretical values of |S| which are explained using variation in the barrier height patches (probably caused by defects at the interface) parameter like their effective area, radius, number, barrier height at the saddle point, with the temperature.}, journal={VACUUM}, author={Kumar, Vibhor and Verma, Jyoti and Maan, A. S. and Akhtar, Jamil}, year={2020}, month={Dec} }