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2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
Contributors: S. Stein n, D. Khachariya*, *, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
2022 journal article
<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>
APPLIED PHYSICS LETTERS, 120(3).
Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, n, P. Reddy n , R. Collazo n , Z. Sitar n
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: P. Reddy* , *, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita*
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: D. Khachariya*, S. Stein n, *, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy*
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