Works (4)

Updated: April 5th, 2024 15:08

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie*, K. Sierakowski*, G. Kamler* ...

Contributors: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie*, K. Sierakowski*, G. Kamler* ...

author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024

2022 journal article

<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>

APPLIED PHYSICS LETTERS, 120(3).

By: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n, R. Collazo n, Z. Sitar n

Contributors: K. Wang n, R. Kirste n, S. Mita n, S. Washiyama n, W. Mecouch n, P. Reddy n, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: May 2, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

Contributors: P. Reddy*, W. Mecouch*, M. Hayden Breckenridge n, D. Khachariya n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita* ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 11, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

Contributors: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries, ORCID
Added: October 3, 2022

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