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Works (4)
Updated: April 5th, 2024 15:08
2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, NC State University Libraries, ORCID
Added: January 2, 2024
2022 journal article
<p>The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN</p>
APPLIED PHYSICS LETTERS, 120(3).
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: May 2, 2022
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 11, 2022
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, NC State University Libraries
Added: October 3, 2022
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