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 @article{sung_huang_baliga_2015, title={Bevel junction termination extension-A new edge termination technique for 4H-SiC high-voltage devices}, volume={36}, DOI={10.1109/led.2015.2427654}, number={6}, journal={IEEE Electron Device Letters}, author={Sung, W. J. and Huang, A. Q. and Baliga, B. J.}, year={2015}, pages={594–596} }
 @inproceedings{sung_huang_baliga_ji_ke_hopkins_2015, title={The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor}, ISBN={9781479962594 9781479962617}, url={http://dx.doi.org/10.1109/ISPSD.2015.7123438}, DOI={10.1109/ispsd.2015.7123438}, note={\urlhttps://ieeexplore.ieee.org/document/7123438/}, booktitle={2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}, publisher={IEEE}, author={Sung, Woongje and Huang, Alex Q. and Baliga, B. J. and Ji, Inhwan and Ke, Haotao and Hopkins, Douglas C.}, year={2015}, month={May}, pages={257–260} }
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 @inproceedings{sung_huang_baliga_2010, title={A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Huang, A. Q. and Baliga, B. J.}, year={2010}, pages={217–220} }
 @inproceedings{sung_wang_huang_baliga_2009, title={Design and investigation of frequency capability of 15kV 4H-SiC IGBT}, DOI={10.1109/ispsd.2009.5158054}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Wang, J. and Huang, A. Q. and Baliga, B. J.}, year={2009}, pages={271–274} }
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