@article{sung_baliga_2017, title={On developing one-chip integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)}, volume={64}, DOI={10.1109/tie.2017.2696515}, number={10}, journal={IEEE Transactions on Industrial Electronics}, author={Sung, W. and Baliga, B. J.}, year={2017}, pages={8206–8212} }
 @article{cai_bodle_mathieu_amos_hamouda_bernacki_mccarty_loboa_2017, title={Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells}, volume={31}, DOI={10.1096/fj.201600560r}, number={1}, journal={FASEB Journal}, author={Cai, S. B. and Bodle, J. C. and Mathieu, P. S. and Amos, A. and Hamouda, M. and Bernacki, S. and McCarty, G. and Loboa, E. G.}, year={2017}, pages={346–355} }
 @article{sung_baliga_huang_2016, title={Area-efficient bevel-edge termination techniques for SiC high-voltage devices}, volume={63}, DOI={10.1109/ted.2016.2532602}, number={4}, journal={IEEE Transactions on Electron Devices}, author={Sung, W. and Baliga, B. J. and Huang, A. Q.}, year={2016}, pages={1630–1636} }
 @article{sung_huang_baliga_2015, title={Bevel junction termination extension-A new edge termination technique for 4H-SiC high-voltage devices}, volume={36}, DOI={10.1109/led.2015.2427654}, number={6}, journal={IEEE Electron Device Letters}, author={Sung, W. J. and Huang, A. Q. and Baliga, B. J.}, year={2015}, pages={594–596} }
 @inproceedings{sung_huang_baliga_ji_ke_hopkins_2015, title={The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor}, DOI={10.1109/ispsd.2015.7123438}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. J. and Huang, A. Q. and Baliga, B. J. and Ji, I. and Ke, H. T. and Hopkins, D. C.}, year={2015}, pages={257–260} }
 @inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }
 @article{sung_van brunt_baliga_huang_2012, title={A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs}, volume={59}, DOI={10.1109/ted.2012.2203337}, number={9}, journal={IEEE Transactions on Electron Devices}, author={Sung, W. J. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={2417–2423} }
 @inproceedings{sung_baliga_huang_2012, title={A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA}, volume={717-720}, DOI={10.4028/www.scientific.net/msf.717-720.1045}, booktitle={Silicon carbide and related materials 2011, pts 1 and 2}, author={Sung, W. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={1045–1048} }
 @article{sung_van brunt_baliga_huang_2011, title={A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension}, volume={32}, DOI={10.1109/led.2011.2144561}, number={7}, journal={IEEE Electron Device Letters}, author={Sung, W. J. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2011}, pages={880–882} }
 @inproceedings{sung_huang_baliga_2010, title={A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Huang, A. Q. and Baliga, B. J.}, year={2010}, pages={217–220} }
 @inproceedings{sung_wang_huang_baliga_2009, title={Design and investigation of frequency capability of 15kV 4H-SiC IGBT}, DOI={10.1109/ispsd.2009.5158054}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Wang, J. and Huang, A. Q. and Baliga, B. J.}, year={2009}, pages={271–274} }
 @article{smart grid technologies_2009, volume={3}, DOI={10.1109/MIE.2009.932583}, number={2}, journal={IEEE Industrial Electronics Magazine}, year={2009}, pages={16–23} }