@article{liu_zhang_isukapati_ashik_morgan_lee_sung_fayed_white_agarwal_2022, title={SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology}, DOI={10.1109/JEDS.2022.3150364}, journal={IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY}, author={Liu, Tianshi and Zhang, Hua and Isukapati, Sundar Babu and Ashik, Emran and Morgan, Adam J. and Lee, Bongmook and Sung, Woongje and Fayed, Ayman and White, Marvin H. and Agarwal, Anant K.}, year={2022} }
 @article{yun_lynch_deboer_morgan_sung_xing_kang_agarwal_veliadis_amarasinghe_et al._2021, title={Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry}, DOI={10.1109/WiPDA49284.2021.9645146}, journal={2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)}, author={Yun, Nick and Lynch, Justin and DeBoer, Skylar and Morgan, Adam J. and Sung, Woongje and Xing, Diang and Kang, Minseok and Agarwal, Anant and Veliadis, Victor and Amarasinghe, Voshadhi and et al.}, year={2021} }
 @article{sung_baliga_2017, title={On developing one-chip integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)}, volume={64}, DOI={10.1109/tie.2017.2696515}, number={10}, journal={IEEE Transactions on Industrial Electronics}, author={Sung, W. and Baliga, B. J.}, year={2017}, pages={8206–8212} }
 @article{cai_bodle_mathieu_amos_hamouda_bernacki_mccarty_loboa_2017, title={Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells}, volume={31}, DOI={10.1096/fj.201600560r}, number={1}, journal={FASEB Journal}, author={Cai, S. B. and Bodle, J. C. and Mathieu, P. S. and Amos, A. and Hamouda, M. and Bernacki, S. and McCarty, G. and Loboa, E. G.}, year={2017}, pages={346–355} }
 @article{sung_baliga_huang_2016, title={Area-efficient bevel-edge termination techniques for SiC high-voltage devices}, volume={63}, DOI={10.1109/ted.2016.2532602}, number={4}, journal={IEEE Transactions on Electron Devices}, author={Sung, W. and Baliga, B. J. and Huang, A. Q.}, year={2016}, pages={1630–1636} }
 @article{sung_huang_baliga_2015, title={Bevel junction termination extension-A new edge termination technique for 4H-SiC high-voltage devices}, volume={36}, DOI={10.1109/led.2015.2427654}, number={6}, journal={IEEE Electron Device Letters}, author={Sung, W. J. and Huang, A. Q. and Baliga, B. J.}, year={2015}, pages={594–596} }
 @inproceedings{sung_huang_baliga_ji_ke_hopkins_2015, title={The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor}, DOI={10.1109/ispsd.2015.7123438}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. J. and Huang, A. Q. and Baliga, B. J. and Ji, I. and Ke, H. T. and Hopkins, D. C.}, year={2015}, pages={257–260} }
 @inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }
 @article{sung_van brunt_baliga_huang_2012, title={A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs}, volume={59}, DOI={10.1109/ted.2012.2203337}, number={9}, journal={IEEE Transactions on Electron Devices}, author={Sung, W. J. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={2417–2423} }
 @inproceedings{sung_baliga_huang_2012, title={A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA}, volume={717-720}, DOI={10.4028/www.scientific.net/msf.717-720.1045}, booktitle={Silicon carbide and related materials 2011, pts 1 and 2}, author={Sung, W. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={1045–1048} }
 @article{sung_van brunt_baliga_huang_2011, title={A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension}, volume={32}, DOI={10.1109/led.2011.2144561}, number={7}, journal={IEEE Electron Device Letters}, author={Sung, W. J. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2011}, pages={880–882} }
 @inproceedings{sung_huang_baliga_2010, title={A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Huang, A. Q. and Baliga, B. J.}, year={2010}, pages={217–220} }
 @inproceedings{sung_wang_huang_baliga_2009, title={Design and investigation of frequency capability of 15kV 4H-SiC IGBT}, DOI={10.1109/ispsd.2009.5158054}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Wang, J. and Huang, A. Q. and Baliga, B. J.}, year={2009}, pages={271–274} }
 @article{smart grid technologies_2009, volume={3}, DOI={10.1109/MIE.2009.932583}, number={2}, journal={IEEE Industrial Electronics Magazine}, year={2009}, pages={16–23} }