@article{yun_lynch_morgan_xing_jin_qianb_kang_amarasinghe_ransom_veliadis_et al._2022, title={Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)}, ISSN={["1063-6854"]}, DOI={10.1109/ISPSD49238.2022.9813639}, abstractNote={This paper reports the detailed comparison of packaged level, 6.5 kV rated 4H-SiC power MOSFET, MOSFET co-packaged with JBS diode (Co-Pack), and monolithically integrated 6.5 kV 4H-SiC MOSFET and JBS diode (JBSFET). JBSFET was designed to disable the PN turn for reliability purposes and save the chip and process cost from the one-chip integration and single metal scheme. Static and dynamic electrical characteristics of stand-alone MOSFET, Co-Pack, and JBSFET are compared to signify the benefit of JBSFET in terms of performance, reliability, and economical point of view.}, journal={2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)}, author={Yun, Nick and Lynch, Justin and Morgan, Adam J. and Xing, Dang and Jin, Michael and Qianb, Jiashu and Kang, Minseok and Amarasinghe, Voshadhi and Ransom, John and Veliadis, Victor and et al.}, year={2022}, pages={249–252} }
 @article{liu_zhang_isukapati_ashik_morgan_lee_sung_fayed_white_agarwal_2022, title={SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology}, volume={10}, ISSN={["2168-6734"]}, DOI={10.1109/JEDS.2022.3150364}, abstractNote={Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.}, journal={IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY}, author={Liu, Tianshi and Zhang, Hua and Isukapati, Sundar Babu and Ashik, Emran and Morgan, Adam J. and Lee, Bongmook and Sung, Woongje and Fayed, Ayman and White, Marvin H. and Agarwal, Anant K.}, year={2022}, pages={129–138} }
 @article{yun_lynch_deboer_morgan_sung_xing_kang_agarwal_veliadis_amarasinghe_et al._2021, title={Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry}, DOI={10.1109/WiPDA49284.2021.9645146}, abstractNote={6.5 kV-rated 4H-SiC MOSFETs have been successfully fabricated and demonstrated on 60 μm-thick, 1.2×1015 cm-3 doped N-type epi-layer on 6-inch, 4H-SiC N+ substrates. Devices were fabricated at the 6-inch SiC foundry, X-FAB, TX, USA. Active and edge termination areas of high voltage (>3.3 kV) SiC devices require critical design consideration due to implant straggles from the low background doping concentration. Despite the fabrication and design challenges, we have demonstrated Ron,sp of 47 mΩ-cm2 with a breakdown voltage of 7.9 kV with a very low leakage current using ring-based edge termination structure. Devices were then diced and packaged in a SUNY Poly’s custom-made package to evaluate short circuit capabilities. Short circuit withstand time of 6.2 μs was recorded from the nominal device, along with 7 μs and 13 μs from the device with narrower JFET width and wider channel length, respectively.}, journal={2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)}, author={Yun, Nick and Lynch, Justin and DeBoer, Skylar and Morgan, Adam J. and Sung, Woongje and Xing, Diang and Kang, Minseok and Agarwal, Anant and Veliadis, Victor and Amarasinghe, Voshadhi and et al.}, year={2021}, pages={361–365} }
 @article{sung_baliga_2017, title={On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)}, volume={64}, ISSN={["1557-9948"]}, DOI={10.1109/tie.2017.2696515}, abstractNote={This paper presents the design, fabrication, and characterization of the SiC JBSFET (junction barrier Schottky (JBS) diode integrated MOSFET). The fabrication of the JBSFET adopted a novel single metal, single thermal treatment process to simultaneously form ohmic contacts on n+, p+ implanted regions, and Schottky contact on the n-4H-SiC epilayer. The presented SiC JBSFET uses 40% smaller wafer area because the diode and MOSFET share the edge termination as well as the current conducting drift region. The proposed single chip solution of MOSFET/JBS diode functionalities eliminates the parasitic inductance between separately packaged devices allowing a higher frequency operation in a power converter.}, number={10}, journal={IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS}, author={Sung, Woongje and Baliga, B. J.}, year={2017}, month={Oct}, pages={8206–8212} }
 @article{cai_bodle_mathieu_amos_hamouda_bernacki_mccarty_loboa_2017, title={Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells}, volume={31}, ISSN={["1530-6860"]}, DOI={10.1096/fj.201600560r}, abstractNote={In this study, we report for the first time that the primary ciliumacts as a crucial sensor for electrical field stimulation (EFS)–enhanced osteogenic response in osteoprogenitor cells. In addition, primary cilia seem to functionally modulate effects of EFS‐induced cellular calciumoscillations. Primary cilia are organelles that have recently been implicated to play a crucial sensor role for many mechanical and chemical stimuli on stem cells. Here, we investigate the role of primary cilia in EFS‐enhanced osteogenic response of human adipose‐derived stem cells (hASCs) by knocking down 2 primary cilia structural proteins, polycystin‐1 and intra flagellar protein‐88. Our results indicate that structurally integrated primary cilia are required for detection of electrical field signals in hASCs. Further more, by measuring changes of cytoplasmic calcium concentration in hASCs during EFS, our findings also suggest that primary ciliamay potentially function as a crucial calcium‐signaling nexus in hASCs during EFS.—Cai, S., Bodle, J. C., Mathieu, P. S., Amos, A., Hamouda, M., Bernacki, S., McCarty, G., Loboa, E. G. Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose‐derived stem cells. FASEB J. 31, 346–355 (2017) www.fasebj.org}, number={1}, journal={FASEB JOURNAL}, author={Cai, Shaobo and Bodle, Josephine C. and Mathieu, Pattie S. and Amos, Alison and Hamouda, Mehdi and Bernacki, Susan and McCarty, Greg and Loboa, Elizabeth G.}, year={2017}, month={Jan}, pages={346–355} }
 @article{sung_baliga_huang_2016, title={Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices}, volume={63}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2016.2532602}, abstractNote={This paper reviews the bevel-edge termination techniques for silicon carbide (SiC) power devices, such as bevel junction termination extension (JTE), resistive-bevel termination, bevel-assisted JTE, and positive-bevel termination. The proposed bevel-edge termination techniques significantly reduce the chip size for SiC power devices. PiN diodes and test structures were fabricated to quantify the relative performance of the proposed structures. Quantitative comparison in chip size reduction, process schemes, and future research directions is discussed in detail.}, number={4}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Sung, Woongje and Baliga, B. Jayant and Huang, Alex Q.}, year={2016}, month={Apr}, pages={1630–1636} }
 @article{sung_huang_baliga_2015, title={Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices}, volume={36}, ISSN={["1558-0563"]}, DOI={10.1109/led.2015.2427654}, abstractNote={A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (~95% of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.}, number={6}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Sung, Woongje and Huang, Alex Q. and Baliga, B. Jayant}, year={2015}, month={Jun}, pages={594–596} }
 @inproceedings{sung_huang_baliga_ji_ke_hopkins_2015, title={The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor}, ISBN={9781479962594 9781479962617}, url={http://dx.doi.org/10.1109/ISPSD.2015.7123438}, DOI={10.1109/ispsd.2015.7123438}, abstractNote={This paper reports the development of symmetric blocking SiC p-GTO thyristors. The proposed thyristor structure features a positive bevel edge termination implemented by orthogonal dicing technique. In this paper, a detailed design of the device structure, forward current-voltage characteristics, and symmetric blocking capabilities are discussed.}, note={\urlhttps://ieeexplore.ieee.org/document/7123438/}, booktitle={2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}, publisher={IEEE}, author={Sung, Woongje and Huang, Alex Q. and Baliga, B. J. and Ji, Inhwan and Ke, Haotao and Hopkins, Douglas C.}, year={2015}, month={May}, pages={257–260} }
 @inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, abstractNote={The turn-on characteristics for the SiC p-ETO are researched in this paper. By establishing the two-dimensional numerical model of the SiC p-ETO, the influence of the device parameters and external circuit conditions on the turn-on speed is discussed. The experiments agree with the simulated results well. The npn turn-on mode of ETO is captured in a high di/dt experiment, which proves the existence of the FBSOA for this time hence the possibility of its application in converters without di/dt snubber. According to the intrinsic temperature limitation of the SiC material, the simulation shows that the peak power density of the SiC p-ETO during turn-on could reach several tens of MW/cm2.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }
 @article{sung_van brunt_baliga_huang_2012, title={A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs}, volume={59}, ISSN={["0018-9383"]}, DOI={10.1109/ted.2012.2203337}, abstractNote={This paper reports the development of 9.4-kV 4H-SiC normally on lateral-channel vertical JFETs. The developed JFETs utilize a buried layer to create a lateral conduction channel, shielding the source from the effects of drain bias. The lowest measured <formula formulatype="inline"><tex Notation="TeX">$R_{\rm on, sp}$</tex></formula> was 127 <formula formulatype="inline"><tex Notation="TeX">$\hbox{m}\Omega\cdot\hbox{cm}^{2}$</tex></formula>. Measurements indicate that the channel resistivity can be further reduced by channel optimization. The fabricated JFETs exhibit pentode-like <formula formulatype="inline"><tex Notation="TeX">$I_{D}$</tex></formula>–<formula formulatype="inline"><tex Notation="TeX">$V_{\rm DS}$ </tex></formula> characteristics with a high forward direct-current blocking gain of over 500. This paper provides a comparative study of gate structures in order to achieve the lowest on -state switching losses and to provide stable forward blocking characteristics for a normally on JFET.}, number={9}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Sung, Woongje and Van Brunt, Edward and Baliga, B. Jayant and Huang, Alex Q.}, year={2012}, month={Sep}, pages={2417–2423} }
 @article{sung_baliga_huang_2012, title={A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA}, volume={717-720}, ISBN={["978-3-03785-419-8"]}, ISSN={["0255-5476"]}, DOI={10.4028/www.scientific.net/msf.717-720.1045}, abstractNote={This paper aims to introduce a solid-state fault isolation device (FID) for the short circuit protection application in the power distribution systems. The key performance of a FID is to have a low on-state loss and a strong short circuit safe operating area (SCSOA). As a FID, a novel 15kV 4H-SiC field controlled diode (FCD) with a p+buried layer is proposed to provide an improved trade-off between the on-state forward voltage drop and the saturation current. Dynamic response to the fault and the application example of the proposed FCD are described in this paper.}, journal={SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2}, author={Sung, Woongje and Baliga, B. J. and Huang, Alex Q.}, year={2012}, pages={1045–1048} }
 @article{sung_van brunt_baliga_huang_2011, title={A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension}, volume={32}, ISSN={["0741-3106"]}, DOI={10.1109/led.2011.2144561}, abstractNote={A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.}, number={7}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Sung, Woongje and Van Brunt, Edward and Baliga, B. J. and Huang, Alex Q.}, year={2011}, month={Jul}, pages={880–882} }
 @inproceedings{sung_huang_baliga_2010, title={A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Sung, W. and Huang, A. Q. and Baliga, B. J.}, year={2010}, pages={217–220} }
 @article{sung_wang_huang_baliga_2009, title={Design and investigation of frequency capability of 15kV 4H-SiC IGBT}, ISBN={["978-1-4244-3525-8"]}, ISSN={["1943-653X"]}, DOI={10.1109/ispsd.2009.5158054}, abstractNote={15kV 4H-SiC n-channel asymmetric and symmetric IGBTs were designed to minimize the on state and switching power loss. A Current Enhancement Layer was adopted to reduce the forward voltage drop for each IGBTs. For the asymmetric IGBT, it was found that the frequency capability of the device was affected most by adjusting the buffer region parameters such as doping concentration, thickness, and lifetime. For the symmetric IGBT, the p+ substrate doping concentration and drift region lifetime were investigated to obtain maximum switching frequency capability. A comparison of frequency capabilities between power MOSFETs, asymmetric, and symmetric IGBTs has been made. IGBTs provide lower power loss than power MOSFETs up to approximately 7 kHz.}, journal={2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS}, author={Sung, Woongje and Wang, Jun and Huang, Alex Q. and Baliga, B. Jayant}, year={2009}, pages={271–274} }
 @article{wang_huang_sung_liu_baliga_2009, title={Smart Grid Technologies}, volume={3}, ISSN={["1941-0115"]}, DOI={10.1109/MIE.2009.932583}, abstractNote={The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.}, number={2}, journal={IEEE INDUSTRIAL ELECTRONICS MAGAZINE}, author={Wang, Jun and Huang, Alex Q. and Sung, Woongje and Liu, Yu and Baliga, B. Jayant}, year={2009}, month={Jun}, pages={16–23} }