2014 conference paper

Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)

Proceedings of the international symposium on power semiconductor, 273–276.

By: X. Huang, D. Lee, V. Bondarenko, A. Baker, D. Sheridan, A. Huang, B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

By: M. Lee, X. Huang, A. Huang & E. Brunt

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

By: X. Huang, G. Wang, Y. Li, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

By: X. Huang, B. Baliga, A. Huang, A. Suvorov, C. Capell, L. Cheng, A. Agarwal

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502.

By: M. Lee, X. Huang & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices

IEEE Electron Device Letters, 33(11), 1592–1594.

By: X. Huang, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248.

By: X. Huang, G. Wang, M. Lee & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions

2012 twenty-seventh annual ieee applied power electronics conference and exposition (apec), 1688–1691.

By: X. Huang, G. Wang, L. Jiang & A. Huang

Source: NC State University Libraries
Added: August 6, 2018