Xing Huang

Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)

Proceedings of the international symposium on power semiconductor, 273–276.

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 44–47.

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 1496–1502.

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2245–2248.

Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions

2012 twenty-seventh annual ieee applied power electronics conference and exposition (apec), 1688–1691.