Xing Huang

Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)

Proceedings of the international symposium on power semiconductor, 273–276.

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

Lee, M.-C., Huang, X., Huang, A., & Brunt, E. V. (2013, October 1).

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

Huang, X., Wang, G., Li, Y., Huang, A. Q., & Baliga, B. J. (2013, March 1).

SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension

Huang, N. X., Baliga, B. J., Huang, A. Q., Suvorov, A., Capell, C., Cheng, N. L., & Agarwal, A. (2013, May 1).

An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis

Lee, M.-C., Huang, X., & Huang, A. Q. (2012, September 1).

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

Huang, X., Brunt, E. V., Baliga, B. J., & Huang, A. Q. (2012, October 11). IEEE Electron Device Letters.

Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress

Huang, X., Wang, G., Lee, M.-C., & Huang, A. Q. (2012, September 1).

Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions

Huang, X., Wang, G., Jiang, L., & Huang, A. Q. (2012, February 1).