@inproceedings{huang_lee_bondarenko_baker_sheridan_huang_baliga_2014, title={Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Huang, X. and Lee, D. Y. and Bondarenko, V. and Baker, A. and Sheridan, D. C. and Huang, A. Q. and Baliga, B. J.}, year={2014}, pages={273–276} }
 @inproceedings{lee_huang_huang_brunt_2013, title={An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs}, DOI={10.1109/wipda.2013.6695559}, booktitle={2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, author={Lee, M. C. and Huang, X. and Huang, A. and Brunt, E.}, year={2013}, pages={44–47} }
 @inproceedings{huang_wang_li_huang_baliga_2013, title={Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection}, DOI={10.1109/apec.2013.6520207}, booktitle={2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013)}, author={Huang, X. and Wang, G. Y. and Li, Y. S. and Huang, A. Q. and Baliga, B. J.}, year={2013}, pages={197–200} }
 @inproceedings{huang_baliga_huang_suvorov_capell_cheng_agarwal_2013, title={SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension}, DOI={10.1109/ispsd.2013.6694475}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Huang, X. and Baliga, B. J. and Huang, A. Q. and Suvorov, A. and Capell, C. and Cheng, L. and Agarwal, A.}, year={2013}, pages={179–182} }
 @inproceedings{lee_huang_huang_2012, title={An accurate prediction of two-dimensional carrier density profile in IGBT and its significances on steady-state and transient analysis}, DOI={10.1109/ecce.2012.6342637}, booktitle={2012 IEEE Energy Conversion Congress and Exposition (ECCE)}, author={Lee, M. C. and Huang, X. and Huang, A. Q.}, year={2012}, pages={1496–1502} }
 @article{huang_van brunt_baliga_huang_2012, title={Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices}, volume={33}, DOI={10.1109/led.2012.2215003}, number={11}, journal={IEEE Electron Device Letters}, author={Huang, X. and Van Brunt, E. and Baliga, B. J. and Huang, A. Q.}, year={2012}, pages={1592–1594} }
 @inproceedings{huang_wang_lee_huang_2012, title={Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress}, DOI={10.1109/ecce.2012.6342436}, booktitle={2012 IEEE Energy Conversion Congress and Exposition (ECCE)}, author={Huang, X. and Wang, G. Y. and Lee, M. C. and Huang, A. Q.}, year={2012}, pages={2245–2248} }
 @inproceedings{huang_wang_jiang_huang_2012, title={Ruggedness analysis of 600V 4H-SiC JBS diodes under repetitive avalanche conditions}, DOI={10.1109/apec.2012.6166048}, booktitle={2012 twenty-seventh annual ieee applied power electronics conference and exposition (apec)}, author={Huang, X. and Wang, G. Y. and Jiang, L. and Huang, A. Q.}, year={2012}, pages={1688–1691} }