@article{song_peng_huang_2017, title={A Medium-Voltage Hybrid DC Circuit Breaker, Part I: Solid-State Main Breaker Based on 15 kV SiC Emitter Turn-OFF Thyristor}, volume={5}, ISSN={["2168-6777"]}, DOI={10.1109/jestpe.2016.2609845}, abstractNote={This paper discusses the design of a 10 kV and 200 A hybrid dc circuit breaker suitable for the protection of the dc power systems in electric ships. The proposed hybrid dc circuit breaker employs a Thompson coil based ultrafast mechanical switch (MS) with the assistance of two additional solid-state power devices. A low-voltage (80 V) metal–oxide–semiconductor field-effect transistors (MOSFETs)-based commutating switch (CS) is series connected with the MS to realize the zero current turn-OFF of the MS. In this way, the arcing issue with the MS is avoided. A 15 kV SiC emitter turn-OFF thyristor-based main breaker (MB) is parallel connected with the MS and CS branch to interrupt the fault current. A stack of MOVs parallel with the MB are used to clamp the voltage across the hybrid dc circuit breaker during interruption. This paper focuses on the electronic parts of the hybrid dc circuit breaker, and a companion paper will elucidate the principle and operation of the fast acting MS and the overall operation of the hybrid dc circuit breaker. The selection and design of both the high-voltage and low-voltage electronic components in the hybrid dc circuit breaker are presented in this paper. The turn-OFF capability of the MB with and without snubber circuit is experimentally tested, validating its suitability for the hybrid dc circuit breaker application. The CSs’ conduction performances are tested up to 200 A, and its current commutating during fault current interruption is also analyzed. Finally, the hybrid dc circuit breaker demonstrated a fast current interruption within 2 ms at 7 kV and 100 A.}, number={1}, journal={IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS}, author={Song, Xiaoqing and Peng, Chang and Huang, Alex Q.}, year={2017}, month={Mar}, pages={278–288} }
@article{peng_song_huang_husain_2017, title={A Medium-Voltage Hybrid DC Circuit Breaker-Part II: Ultrafast Mechanical Switch}, volume={5}, ISSN={["2168-6777"]}, DOI={10.1109/jestpe.2016.2609391}, abstractNote={This paper presents the test results of an ultrafast (less than 2 ms) medium-voltage hybrid dc circuit breaker prototype that consists of three switching devices: a 15-kV silicon carbide (SiC) emitter turn-off thyristor as the main breaker (MB), a fast acting mechanical switch, and a commutating switch (CS) to quickly divert the primary current to the MB for arcless interruption. The hybrid dc circuit breaker prototype can interrupt a circuit in less than 2 ms in dc power systems up to 10 kV, such as in electric ships. The ultrafast operations and extremely low loss can effectively limit the fault current level and switching transients in all medium-voltage systems, and can provide intelligent and fast protection function for smart power distribution and critical loads in a modernized grid. The design considerations of the three switching devices of the hybrid dc circuit breaker are presented. This paper focuses on the ultrafast mechanical switch and the testing of the hybrid dc circuit breaker, while a companion paper addresses the high-voltage solid-state main switch and the low-voltage solid-state CS.}, number={1}, journal={IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS}, author={Peng, Chang and Song, Xiaoqing and Huang, Alex Q. and Husain, Iqbal}, year={2017}, month={Mar}, pages={289–296} }
@article{cai_bodle_mathieu_amos_hamouda_bernacki_mccarty_loboa_2017, title={Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells}, volume={31}, ISSN={["1530-6860"]}, DOI={10.1096/fj.201600560r}, abstractNote={In this study, we report for the first time that the primary ciliumacts as a crucial sensor for electrical field stimulation (EFS)–enhanced osteogenic response in osteoprogenitor cells. In addition, primary cilia seem to functionally modulate effects of EFS‐induced cellular calciumoscillations. Primary cilia are organelles that have recently been implicated to play a crucial sensor role for many mechanical and chemical stimuli on stem cells. Here, we investigate the role of primary cilia in EFS‐enhanced osteogenic response of human adipose‐derived stem cells (hASCs) by knocking down 2 primary cilia structural proteins, polycystin‐1 and intra flagellar protein‐88. Our results indicate that structurally integrated primary cilia are required for detection of electrical field signals in hASCs. Further more, by measuring changes of cytoplasmic calcium concentration in hASCs during EFS, our findings also suggest that primary ciliamay potentially function as a crucial calcium‐signaling nexus in hASCs during EFS.—Cai, S., Bodle, J. C., Mathieu, P. S., Amos, A., Hamouda, M., Bernacki, S., McCarty, G., Loboa, E. G. Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose‐derived stem cells. FASEB J. 31, 346–355 (2017) www.fasebj.org}, number={1}, journal={FASEB JOURNAL}, author={Cai, Shaobo and Bodle, Josephine C. and Mathieu, Pattie S. and Amos, Alison and Hamouda, Mehdi and Bernacki, Susan and McCarty, Greg and Loboa, Elizabeth G.}, year={2017}, month={Jan}, pages={346–355} }
@article{song_huang_lee_peng_2017, title={Theoretical and Experimental Study of 22 kV SiC Emitter Turn-OFF (ETO) Thyristor}, volume={32}, ISSN={["1941-0107"]}, DOI={10.1109/tpel.2016.2616841}, abstractNote={Controllable three terminal high voltage ($>$ 10 kV) power switches based on silicon carbide (SiC) material are gaining significant attentions since silicon (Si) power switches such as insulated gate bipolar transistors (IGBTs) are typically designed for much lower blocking voltages. After more than 30 years of commercial development, there is a fundamental limitation in designing Si IGBTs with more than 6.5 kV voltage rating. On the other hand, the voltage barrier for SiC power devices could easily exceed 10 kV. In this paper, a world record 22 kV SiC p-type emitter turn-OFF (ETO) (p-ETO) thyristor is reported and analyzed as a promising candidate for high-voltage applications, such as solid-state circuit breaker, HVdc, flexible alternating current transmission system (FACTS), and motor drives. The device is based on a 2 cm2 22 kV p-type SiC gate turn-off thyristor (p-GTO) structure. Its static performances are analyzed exhibiting a high voltage (22 kV) blocking characteristic, ultralow leakage current, and a low forward voltage drop ( $\sim$7 V at 100 A) for a broad range of temperatures. The dynamic performances including turn-on and turn-off are studied. Key switching characteristics such as turn-off storage time, turn-off loss, dv/dt, and di/dt are presented and analyzed. In addition, the large reverse biased safe operation area (RBSOA) of the 22 kV SiC ETO is theoretically analyzed and verified by simulations and experimental tests.}, number={8}, journal={IEEE TRANSACTIONS ON POWER ELECTRONICS}, author={Song, Xiaoqing and Huang, Alex Q. and Lee, Meng-Chia and Peng, Chang}, year={2017}, month={Aug}, pages={6381–6393} }
@inproceedings{song_huang_liu_zhang_2016, title={1200v/200a freedm-pair: loss and cost reduction analysis}, DOI={10.1109/wipda.2016.7799928}, abstractNote={FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition. During the delay time, the current will be carried by the MOSFET only. During the turn-on, the SiC MOSFET and the IGBT can be turned on at the same time. Due to faster turn-on speed of the MOSFET, the IGBT is also turned on under the ZVS condition. Another advantage of the FREEDM-Pair is the better conduction characteristics compared to the Si IGBT by combining both the unipolar and bipolar devices' advantages in current conduction. Therefore the FREEDM-Pair provides an ideal option to realize the tradeoff between the cost and performance, and can be applied to main stream applications which currently use IGBT. Previously, the 6.5-kV FREEDM-Pairs results have been published and analyzed. In this paper, loss and cost reduction of a 1200V/200A FREEDM-Pair is presented and analyzed for the first time.}, booktitle={2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda)}, author={Song, X. Q. and Huang, A. Q. and Liu, P. K. and Zhang, L. Q.}, year={2016}, pages={152–157} }
@inproceedings{song_huang_zhang_liu_ni_2016, title={15kV/40A FREEDM super-cascode: A cost effective SiC high voltage and high frequency power switch}, DOI={10.1109/ecce.2016.7854643}, abstractNote={High voltage wide bandgap (WBG) semiconductor devices like the 15kV SiC MOSFET have attracted great attentions because of its potential applications in high voltage and high frequency power converters. However, these devices are not commercially available at the moment and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper, a 15kV/40A three terminal power switch, the FREEDM Super-Cascode, is reported for the first time which is based on series connection of 1.2kV SiC power devices. The design and operation principle of the FREEDM Super-Cascode are introduced and the performance including the static blocking capability, conduction characteristics over a wide range of temperatures, and dynamic switching performances are analyzed. In addition, the thermal resistance of the FREEDM Super-Cascode is measured and the power dissipation capability is projected. The FREEDM Super-Cascode costs only one third of the estimated high voltage SiC MOSFETs, and will facilitate early applications of SiC in very high voltage and high frequency power converters.}, booktitle={2016 ieee energy conversion congress and exposition (ecce)}, author={Song, X. Q. and Huang, A. Q. and Zhang, L. Q. and Liu, P. K. and Ni, X. J.}, year={2016} }
@inproceedings{tan_song_pcng_liu_huang_2016, title={Hierarchical protection architecture for 380v dc data center application}, DOI={10.1109/ecce.2016.7855145}, abstractNote={The DC distribution system is becoming an appealing spot due to its higher energy efficiency in recent years. Nowadays, it has been already applied in data centers, commercial buildings, electrical vehicles charger station and DC micro grid systems, etc. However, there are a lot of challenges in DC application which is not critical in traditional AC system, such as arcing, capacitive charging and discharging, etc. All of them make the protection strategy and architecture an important issue for DC application. In this paper, one 3-level hierarchy circuit protection architecture is proposed with developed solid state circuit protection hardware. It is designed with considering the power rating for DC data center load conditions. Analysis and experimental results based on 380V DC voltage have been conducted and discussed.}, booktitle={2016 ieee energy conversion congress and exposition (ecce)}, author={Tan, K. and Song, X. Q. and Pcng, C. and Liu, P. and Huang, A. Q.}, year={2016} }
@inproceedings{song_huang_peng_zhang_2016, title={Improved 6.5kV FREEMD-pair based on SiC JFET and Si IGBT}, DOI={10.1109/apec.2016.7467883}, abstractNote={The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage for the SiC JFET and Si IGBT which complicates the gate driver design and increases the total cost. Also, the high voltage SiC JBS reverse diode in FREEDM-Pair is indispensable for the reverse current conduction, leading to higher cost and larger package size. To address these issues, an improved FREEDM-Pair is proposed in this paper, in which the SiC JBS diode is eliminated and the normally-off SiC JFET is operated in cascode configuration to unify the gate driver voltage level and speed up the switching of the JFET. The design and operation of improved FREEDM-Pair is elaborated and experimental results verified its advantages. Also, the affordable cost demonstrates that this promising concept is an ideal step to introduce high voltage SiC power devices.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Song, X. Q. and Huang, A. Q. and Peng, C. and Zhang, L. Q.}, year={2016}, pages={269–275} }
@inproceedings{tan_liu_ni_peng_song_huang_2016, title={Performance evaluation of multiple Si and SiC solid state devices for circuit breaker application in 380VDC delivery system}, DOI={10.1109/apec.2016.7467990}, abstractNote={The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compare with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection is one of them. The 1200V SiC devices has been developed by many manufacturers in recent years which makes them good candidates in DC circuit breaker application. In this paper, the 380V DC circuit breaker employing solid state devices for DC power delivery system has been proposed and introduced. The criteria of device characteristics particularly for DC solid state circuit breaker application is discussed and defined. Characteristics of 4 different Si and SiC solid state devices in similar power rating have been compared based on defined criteria. The pros and cons of different devices candidates is introduced with test results for DC circuit breaker application.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Tan, K. and Liu, P. K. and Ni, X. J. and Peng, C. and Song, X. Q. and Huang, A. Q.}, year={2016}, pages={983–989} }
@inproceedings{tan_peng_liu_song_huang_2016, title={Zero standby power high efficiency hot plugging outlet for 380VDC power delivery system}, DOI={10.1109/apec.2016.7467863}, abstractNote={The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compared with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. However, the electrical arc and related potential for fire and human injury is a main safety concern for the DC system. Besides, the inrush current caused by the load capacitance when hot plugged in to the DC system is also a major issue that must be considered when designing DC system. In this paper, a smart hot plugging outlet is proposed and developed by embedding solid state device into the DC outlet. Besides, over temperature and dual threshold over current protections have been also integrated to realize current limiting and trip function for each outlet. Analysis and experimental results based on 380V DC, which is a common voltage level adopted in data centers and DC micro grids, are discussed and presented.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Tan, K. and Peng, C. and Liu, P. K. and Song, X. Q. and Huang, A. Q.}, year={2016}, pages={132–137} }
@inproceedings{song_huang_lee_peng_cheng_o'brien_ogunniyi_scozzie_palmour_2015, title={22 kV SiC emitter turn-off (ETO) thyristor and Its dynamic performance including SOA}, DOI={10.1109/ispsd.2015.7123443}, abstractNote={Ultra-high voltage (>10 kV) power devices based on SiC are gaining significant attentions since Si power devices are typically at lower voltage levels. In this paper, a world record 22kV Silicon Carbide (SiC) p-type ETO thyristor is developed and reported as a promising candidate for ultra-high voltage applications. The device is based on a 2cm2 22kV p type gate turn off thyristor (p-GTO) structure. Its static as well as dynamic performances are analyzed, including the anode to cathode blocking characteristics, forward conduction characteristics at different temperatures, turn-on and turn-off dynamic performances. The turn-off energy at 6kV, 7kV and 8kV respectively is also presented. In addition, theoretical boundary of the reverse biased safe operation area (RBSOA) of the 22kV SiC ETO is obtained by simulations and the experimental test also demonstrated a wide RBSOA.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C. and Cheng, L. and O'Brien, H. and Ogunniyi, A. and Scozzie, C. and Palmour, J.}, year={2015}, pages={277–280} }
@inproceedings{huang_song_zhang_2015, title={6.5 kV Si/SiC hybrid power module: An ideal next step?}, DOI={10.1109/iwipp.2015.7295979}, abstractNote={Silicon carbide (SiC) power switches such as JFET or MOSFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid power module (HPM) should be a natural next step moving forward for high voltage applications to address the cost issue. In the proposed Si/SiC HPM, a SiC JFET is connected in parallel with Si IGBT to combine the advantages of both IGBT and JFET. A 6.5 kV HPM is developed based on Si IGBT and SiC JFET as an example to demonstrate its superior cost/performance. The switching loss can be reduced by more than 70% at a cost of about 70% higher compared to Si IGBT. This work is especially essential for high voltage applications such as medium voltage motor drive, FACTS and HVDC systems.}, booktitle={2015 IEEE International Workshop on Integrated Power Packaging (IWIPP)}, author={Huang, A. Q. and Song, X. Q. and Zhang, L. Q.}, year={2015}, pages={64–67} }
@inproceedings{song_huang_2015, title={6.5kV FREEDM-Pair: Ideal high power switch capitalizing on Si and SiC}, DOI={10.1109/epe.2015.7309243}, abstractNote={6.5kV Si IGBTs have been used widely in median voltage drives, HVDC, FACTs and traction systems. However, the large switching losses of the Si IGBT limit its switching frequency to only 100Hz to 1kHz. On the other hand, wide bandgap (WBG)power devices such as Silicon Carbide (SiC) MOSFET or JFET have demonstrated their superior advantages over Si IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that the FREEDM-Pair, a Si/SiC hybrid switch, should be an ideal and cost effective switch for high power applications. In the proposed FREEDM-Pair, a SiC MOSFET is connected in parallel with Si IGBT to combine the advantages of IGBT and MOSFET. A 6.5kV FREEDM-Pair is developed as an example to demonstrate its superior cost/performance. Experimental results demonstrated 70% switching loss reduction and the FREEDM-Pair cost is estimated to be only 50% higher than 6.5kV Si IGBT.}, booktitle={2015 17th european conference on power electronics and applications (epe'15 ecce-europe)}, author={Song, X. Q. and Huang, A. Q.}, year={2015} }
@inproceedings{song_huang_lee_wang_2015, title={A dynamic measurement method for parasitic capacitances of high voltage SiC MOSFETs}, DOI={10.1109/ecce.2015.7309788}, abstractNote={The voltage dependent parasitic capacitances in high voltage semiconductor power devices such as MOSFET, JFET and IGBT play a vital role in the understanding and modeling of the device switching performance. In this paper, a simple but effective parasitic capacitance measurement method is proposed. The output capacitance Coss and the reverse transfer capacitance Crss can be measured simultaneously and directly in the proposed parasitic capacitance tester (PCT). The input capacitance Ciss is measured based on gate driver waveforms during the turn on transient. To verify the effectiveness of the proposed method, a 10kV SiC MOSFET parasitic capacitances are measured as an example. The measured parasitic capacitance results are compared with those from a conventional LCR meter and theoretical calculation. Furthermore, a Matlab/Simulink compact circuit model for the 10kV SiC MOSFET is developed based on the measured parasitic capacitances, whose results also validate the effectiveness of the proposed method.}, booktitle={2015 ieee energy conversion congress and exposition (ecce)}, author={Song, X. Q. and Huang, A. Q. and Lee, M. J. and Wang, G. Y.}, year={2015}, pages={935–941} }
@inproceedings{song_huang_ni_zhang_2015, title={Comparative evaluation of 6kV Si and SiC power devices for medium voltage power flectronics applications}, DOI={10.1109/wipda.2015.7369289}, abstractNote={In order to better assist researchers to select the appropriate power device for medium voltage power electronics applications, this paper presents a comparative evaluation on three typical 6kV level Si and SiC power devices, including 6.5kV/25A Si IGBT from ABB, 6.5kV/15A normally off SiC JFET from USCi and a FREEDM System Center developed 6kV/26A SiC series-connected JFET. The 6.5kV Si IGBT and 6.5kV SiC JFET are packaged in the same module to minimize the effect of different parasitic inductance on the comparison. The 6kV SiC series-connected JFET is developed based on one 1.2kV SiC MOSFET from Cree and four 1.2kV SiC JFETs from Infineon, in this paper, named FREEDM Super-Cascode. A short introduction on the three selected devices are first given, then their forward conduction and switching performances are compared. Also, some additional features are discussed and compared, including the device size, cost, gate driver circuit complexity.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Song, X. Q. and Huang, A. Q. and Ni, X. J. and Zhang, L. Q.}, year={2015}, pages={160–165} }
@inproceedings{peng_huang_song_2015, title={Current commutation in a medium voltage hybrid DC circuit breaker using 15 kV vacuum switch and SiC devices}, DOI={10.1109/apec.2015.7104661}, abstractNote={Analysis and experimental study of current commutation in an ultra-fast, current limiting, hybrid DC circuit breaker for medium voltage applications is reported in this paper. The hybrid DCCB consists a fast acting 15 kV mechanical switch, a low voltage commutating switch, a single 15 kV Silicon Carbide Emitter Turn Off Thyristor (ETO) device, and a stack of MOVs. The proof-of-concept prototype is able to conduct 45 A normal current and interrupt a maximum of more than 100 A fault current at medium voltage level in less than 4 milliseconds, which is one order of magnitude faster compared to conventional mechanical circuit breakers that typically take 40-100 ms. This paper has presented the operation principle of a hybrid DC circuit breaker and analyzed the current commutation process. Based on the analysis, guidelines are given in the paper to select and design the commutating switch.}, booktitle={2015 thirtieth annual ieee applied power electronics conference and exposition (apec 2015)}, author={Peng, C. and Huang, A. Q. and Song, X. Q.}, year={2015}, pages={2244–2250} }
@inproceedings{huang_peng_song_2015, title={Design and development of a 7.2 kV/200A hybrid circuit breaker based on 15 kV SiC emitter turn-off (ETO) thyristor}, DOI={10.1109/ests.2015.7157909}, abstractNote={This paper deals with the design of a 7.2 kV, 200 A hybrid AC circuit breaker employing a 15 kV Silicon Carbide (SiC) Emitter Turn-off (ETO) thyristor device as the main semiconductor switch and presents the test results to verify the functions of both the high voltage and low voltage electronic components of the medium voltage hybrid circuit breaker. The hybrid circuit breaker consists a fast acting mechanical switch, a low voltage commutating switch in series with that mechanical switch, a single 15 kV SiC ETO Thyristor device, and a stack of MOVs. This paper focuses on the electronic parts and a companion paper would elucidate the principle and operation of the fast acting mechanical switch. To fulfill bidirectional interruption capability of the high voltage semiconductor device, the SiC ETO is equipped with a low cost silicon diode bridge; a snubber capacitor is equipped in parallel with this diode bridge to alleviate voltage stress of the ETO during turn-off transients. A compact low voltage commutating switch based on silicon MOSFETs has been built and tested up to the full current rating.}, booktitle={2015 IEEE Electric Ship Technologies Symposium (ESTS)}, author={Huang, A. and Peng, C. and Song, X. Q.}, year={2015}, pages={306–311} }
@inproceedings{ni_gao_song_huang_yu_2015, title={Development of 6kV SiC hybrid power switch based on 1200V SiC JFET and MOSFET}, DOI={10.1109/ecce.2015.7310240}, abstractNote={Series-connected power switch provides a viable solution to implement high voltage and high frequency converters. By using the commercially available 1200V Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) and Metal Oxide semiconductor Filed-effect Transistor (MOSFET), a 6 kV SiC hybrid power switch concept and its application are demonstrated. To solve the parameter deviation issue in the series device structure, an optimized voltage control method is introduced, which can guarantee the equal voltage sharing under both static and dynamic state. Without Zener diode arrays, this strategy can significantly reduce the turn-off switching loss. Moreover, this hybrid MOSFET-JFETs concept is also presented to suppress the silicon MOSFET parasitic capacitance effect. In addition, the positive gate drive voltage greatly accelerates turn-on speed and decreases the switching loss. Compared with the conventional super-JFETs, the proposed scheme is suitable for series-connected device, and can achieve better performance. The effectiveness of this method is validated by simulations and experiments, and promising results are obtained.}, booktitle={2015 ieee energy conversion congress and exposition (ecce)}, author={Ni, X. J. and Gao, R. and Song, X. Q. and Huang, A. Q. and Yu, Wensong}, year={2015}, pages={4113–4118} }
@inproceedings{song_huang_lee_peng_2015, title={High voltage Si/SiC hybrid switch: An ideal next step for SiC}, DOI={10.1109/ispsd.2015.7123446}, abstractNote={Silicon carbide (SiC) power switches such as MOSFET or JFET have demonstrated their superior advantages over silicon (Si) power devices such as IGBT, especially in terms of significantly reduced switching losses. A major issue facing large scale adoption of SiC power devices is still the much higher cost. This paper proposes that Si/SiC hybrid switch should be a natural next step moving forward for high voltage applications to address the cost issue. In the proposed Si/SiC hybrid switch, a SiC MOSFET is connected in parallel with Si IGBT to combine the advantages of IGBT and MOSFET. This concept can also works well with SiC JFET. A 6.5 kV Si IGBT and SiC MOSFET hybrid switch is developed as an example to demonstrate its superior cost/performance. The switching loss can be reduced by more than 70% at a cost of only 50% higher compared to Si IGBT. This work is especially essential for high voltage applications such as medium voltage motor drive, FACTS and HVDC systems.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Song, X. Q. and Huang, A. Q. and Lee, M. C. and Peng, C.}, year={2015}, pages={289–292} }
@inproceedings{wang_huang_wang_song_ni_ryu_grider_schupbach_palmour_2015, title={Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs}, DOI={10.1109/ispsd.2015.7123431}, abstractNote={This paper presents the static and dynamic performance of 15 kV SiC IGBTs with 2 um and 5 um field-stop buffer layer thicknesses respectively and compares them with 15 kV SiC MOSFET in term of loss and switching capability. Their switching energy for different gate resistors and temperature have been reported and compared. A 5 kHz 10.5 kW 8 kV boost converter has been built and tested using these three devices respectively. The MOSFET based boost converter has the highest efficiency 99.39% which is the highest reported efficiency for a high voltage SiC device based converter. PLECS loss models can be developed for these devices based on the characterization data to simplify the simulation of a variety circuits or applications which potentially utilize these devices.}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Wang, G. Y. and Huang, A. Q. and Wang, F. and Song, X. Q. and Ni, X. J. and Ryu, S. H. and Grider, D. and Schupbach, M. and Palmour, J.}, year={2015}, pages={229–232} }
@inproceedings{liang_huang_sung_lee_song_peng_cheng_palmour_scozzie_2015, title={Turn-on capability of 22 kV SiC Fmitter Turn-off (ETO) Thyristor}, DOI={10.1109/wipda.2015.7369275}, abstractNote={The turn-on characteristics for the SiC p-ETO are researched in this paper. By establishing the two-dimensional numerical model of the SiC p-ETO, the influence of the device parameters and external circuit conditions on the turn-on speed is discussed. The experiments agree with the simulated results well. The npn turn-on mode of ETO is captured in a high di/dt experiment, which proves the existence of the FBSOA for this time hence the possibility of its application in converters without di/dt snubber. According to the intrinsic temperature limitation of the SiC material, the simulation shows that the peak power density of the SiC p-ETO during turn-on could reach several tens of MW/cm2.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Liang, L. and Huang, A. Q. and Sung, W. J. and Lee, M. C. and Song, X. Q. and Peng, C. and Cheng, L. and Palmour, J. and Scozzie, C.}, year={2015}, pages={192–195} }