@article{yang_lee_misra_2019, title={Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx}, volume={66}, DOI={10.1109/TED.2018.2875094}, number={1}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2019}, pages={539–545} }
 @article{yang_lee_misra_2016, title={Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal}, volume={63}, DOI={10.1109/ted.2016.2565665}, number={7}, journal={IEEE Transactions on Electron Devices}, author={Yang, X. Y. and Lee, B. and Misra, V.}, year={2016}, pages={2826–2830} }
 @article{yang_lee_misra_2015, title={High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2}, volume={36}, DOI={10.1109/led.2015.2399891}, number={4}, journal={IEEE Electron Device Letters}, author={Yang, X. Y. and Lee, B. and Misra, V.}, year={2015}, pages={312–314} }
 @article{yang_lee_misra_2015, title={Investigation of lanthanum silicate conditions on 4H-SiC MOSFET characteristics}, volume={62}, DOI={10.1109/ted.2015.2480047}, number={11}, journal={IEEE Transactions on Electron Devices}, author={Yang, X. Y. and Lee, B. and Misra, V.}, year={2015}, pages={3781–3785} }
 @inproceedings{yang_lee_misra_2014, title={High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2}, volume={778-780}, DOI={10.4028/www.scientific.net/msf.778-780.557}, booktitle={Silicon carbide and related materials 2013, pts 1 and 2}, author={Yang, X. Y. and Lee, B. and Misra, V.}, year={2014}, pages={557–561} }
 @article{kirkpatrick_lee_suri_yang_misra_2012, title={Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs}, volume={33}, DOI={10.1109/led.2012.2203782}, number={9}, journal={IEEE Electron Device Letters}, author={Kirkpatrick, C. J. and Lee, B. and Suri, R. and Yang, X. Y. and Misra, V.}, year={2012}, pages={1240–1242} }
 @inproceedings{lee_kirkpatrick_choi_yang_huang_misra_2012, title={Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application}, volume={9}, DOI={10.1002/pssc.201100422}, number={3-4}, booktitle={Physica status solidi c: current topics in solid state physics, vol 9, no 3-4}, author={Lee, B. and Kirkpatrick, C. and Choi, Y. H. and Yang, X. Y. and Huang, A. Q. and Misra, V.}, year={2012}, pages={868–870} }
 @article{lee_novak_lichtenwalner_yang_misra_2011, title={Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties}, volume={58}, DOI={10.1109/ted.2011.2159306}, number={9}, journal={IEEE Transactions on Electron Devices}, author={Lee, B. and Novak, S. R. and Lichtenwalner, D. J. and Yang, X. Y. and Misra, V.}, year={2011}, pages={3106–3115} }
 @inproceedings{kirkpatrick_lee_yang_misra_2011, title={Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics}, volume={8}, DOI={10.1002/pssc.201001064}, number={7-8}, booktitle={Physica status solidi c: current topics in solid state physics, vol 8, no 7-8}, author={Kirkpatrick, C. and Lee, B. and Yang, X. Y. and Misra, V.}, year={2011} }
 @article{novak_lee_yang_misra_2010, title={Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications}, volume={157}, DOI={10.1149/1.3365031}, number={6}, journal={Journal of the Electrochemical Society}, author={Novak, S. and Lee, B. and Yang, X. Y. and Misra, V.}, year={2010}, pages={H589–592} }
 @article{jayanti_yang_lichtenwalner_misra_2010, title={Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures}, volume={96}, DOI={10.1063/1.3355547}, number={9}, journal={Applied Physics Letters}, author={Jayanti, S. and Yang, X. Y. and Lichtenwalner, D. J. and Misra, V.}, year={2010} }
 @inproceedings{jayanti_yang_suri_misra_2010, title={Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications}, DOI={10.1109/iedm.2010.5703301}, booktitle={2010 international electron devices meeting - technical digest}, author={Jayanti, S. and Yang, X. Y. and Suri, R. and Misra, V.}, year={2010} }
 @article{kayis_leach_zhu_wu_li_ozgur_morkoc_yang_misra_handel_2010, title={low-frequency noise measurements of algan/gan metal-oxide-semiconductor heterostructure field-effect transistors with hfalo gate dielectric}, volume={31}, DOI={10.1109/led.2010.2055823}, number={9}, journal={IEEE Electron Device Letters}, author={Kayis, C. and Leach, J. H. and Zhu, C. Y. and Wu, M. and Li, X. and Ozgur, U. and Morkoc, H. and Yang, X. and Misra, V. and Handel, P. H.}, year={2010}, pages={1041–1043} }