Xiangyu Yang

Yang, X., Lee, B., & Misra, V. (2019). Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545. https://doi.org/10.1109/TED.2018.2875094

Yang, X., Lee, B., & Misra, V. (2016). Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal. IEEE Transactions on Electron Devices, 63(7), 2826–2830. https://doi.org/10.1109/ted.2016.2565665

Yang, X., Lee, B., & Misra, V. (2015). High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2. IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314. https://doi.org/10.1109/led.2015.2399891

Yang, X., Lee, B., & Misra, V. (2015). Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics. IEEE Transactions on Electron Devices, 62(11), 3781–3785. https://doi.org/10.1109/ted.2015.2480047

Yang, X., Lee, B., & Misra, V. (2014). High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561. https://doi.org/10.4028/www.scientific.net/msf.778-780.557

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012). Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs. IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242. https://doi.org/10.1109/led.2012.2203782

Lee, B., Kirkpatrick, C., Choi, Y.-hwan, Yang, X., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870. https://doi.org/10.1002/pssc.201100422

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X., & Misra, V. (2011). Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115. https://doi.org/10.1109/ted.2011.2159306

Kirkpatrick, C., Lee, B., Yang, X., Misra, V., Wetzel, C., & Khan, A. (2011). Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201001064

Kayis, C., Leach, J. H., Zhu, C. Y., Wu, M., Li, X., Oezguer, U., … Handel, P. H. (2010). Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric. IEEE ELECTRON DEVICE LETTERS, 31(9), 1041–1043. https://doi.org/10.1109/led.2010.2055823

Novak, S., Lee, B., Yang, X., & Misra, V. (2010). Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592. https://doi.org/10.1149/1.3365031

Jayanti, S., Yang, X., Lichtenwalner, D. J., & Misra, V. (2010). Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures. APPLIED PHYSICS LETTERS, 96(9). https://doi.org/10.1063/1.3355547

Jayanti, S., Yang, X. Y., Suri, R., & Misra, V. (2010). Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703301