Xiangyu Yang

Yang, X., Lee, B., & Misra, V. (2019). Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545. https://doi.org/10.1109/TED.2018.2875094

Yang, X., Lee, B., & Misra, V. (2016). Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal. IEEE Transactions on Electron Devices, 63(7), 2826–2830. https://doi.org/10.1109/ted.2016.2565665

Yang, X. Y., Lee, B., & Misra, V. (2015). High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2. IEEE Electron Device Letters, 36(4), 312–314. https://doi.org/10.1109/led.2015.2399891

Yang, X., Lee, B., & Misra, V. (2015). Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics. IEEE Transactions on Electron Devices, 62(11), 3781–3785. https://doi.org/10.1109/ted.2015.2480047

Yang, X. Y., Lee, B., & Misra, V. (2014). High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2. Silicon carbide and related materials 2013, pts 1 and 2, 778-780, 557–561. https://doi.org/10.4028/www.scientific.net/msf.778-780.557

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X. Y., & Misra, V. (2012). Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs. IEEE Electron Device Letters, 33(9), 1240–1242. https://doi.org/10.1109/led.2012.2203782

Lee, B., Kirkpatrick, C., Choi, Y. H., Yang, X. Y., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 868–870. https://doi.org/10.1002/pssc.201100422

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X. Y., & Misra, V. (2011). Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties. IEEE Transactions on Electron Devices, 58(9), 3106–3115. https://doi.org/10.1109/ted.2011.2159306

Kirkpatrick, C., Lee, B., Yang, X. Y., & Misra, V. (2011). Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8). https://doi.org/10.1002/pssc.201001064

Novak, S., Lee, B., Yang, X. Y., & Misra, V. (2010). Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications. Journal of the Electrochemical Society, 157(6), H589–592. https://doi.org/10.1149/1.3365031

Jayanti, S., Yang, X. Y., Lichtenwalner, D. J., & Misra, V. (2010). Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures. Applied Physics Letters, 96(9). https://doi.org/10.1063/1.3355547

Jayanti, S., Yang, X. Y., Suri, R., & Misra, V. (2010). Ultimate scalability of TaN metal floating gate with incorporation of High-K blocking dielectrics for flash memory applications. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703301

Kayis, C., Leach, J. H., Zhu, C. Y., Wu, M., Li, X., Ozgur, U., … Handel, P. H. (2010). low-frequency noise measurements of algan/gan metal-oxide-semiconductor heterostructure field-effect transistors with hfalo gate dielectric. IEEE Electron Device Letters, 31(9), 1041–1043. https://doi.org/10.1109/led.2010.2055823