Xuegong Yu

Lu, J. G., Yu, X. G., Park, Y., & Rozgonyi, G. (2009). Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure. Journal of Applied Physics, 105(7).

Yu, X., Lu, J., Youssef, K., & Rozgonyi, G. (2009). Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding. Applied Physics Letters, 94(22).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)/(100) interface. Applied Physics Letters, 92(26).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary. Semiconductor Science and Technology, 23(12).

Yu, X. G., Lu, J. G., & Rozgonyi, G. (2008). Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary. Journal of Applied Physics, 104(11).