@article{jiang_sung_baliga_wang_lee_huang_2018, title={Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height}, volume={47}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-017-5812-2}, number={2}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Jiang, Yifan and Sung, Woongje and Baliga, Jayant and Wang, Sizhen and Lee, Bongmook and Huang, Alex}, year={2018}, month={Feb}, pages={927–931} }
 @article{li_tong_huang_tao_zhou_jiang_jiang_deng_she_zhang_et al._2018, title={SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode}, volume={65}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2017.2767904}, abstractNote={A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode characteristics while guarantees excellent fundamental performance of TMOS. In the blocking state, the P-base region, the trench gate, and the P+ shield at the trench bottom serve as the TLP of the Schottky contact. Each protection assists in depleting the drift region beneath Schottky contact. Benefiting from the self-assembled TLP, the leakage current of the integrated body diode of the ITS-TMOS is significantly reduced. Moreover, the reverse turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>) and the gate charge (<inline-formula> <tex-math notation="LaTeX">${Q} _{g}$ </tex-math></inline-formula>) of the ITS-TMOS are 65% and 18% lower than those of the conventional TMOS, respectively. The improved overall performances make the SiC ITS-TMOS a competitive candidate for high-efficiency and high power density applications.}, number={1}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Li, Xuan and Tong, Xing and Huang, Alex Q. and Tao, Hong and Zhou, Kun and Jiang, Yifan and Jiang, Junning and Deng, Xiaochuan and She, Xu and Zhang, Bo and et al.}, year={2018}, month={Jan}, pages={347–351} }
 @misc{zhao_gao_jiang_zhang_wang_xu_nishiguchi_fukawa_hopkins_2017, title={Flexible epoxy-resin substrate based 1.2 kV SiC half bridge module with ultra-low parasitics and high functionality}, url={http://dx.doi.org/10.1109/ecce.2017.8096700}, DOI={10.1109/ecce.2017.8096700}, abstractNote={To take full advantages of Wide Bandgap power semiconductor devices, breakthroughs on power module development are heavily explored nowadays. This paper introduces a 1.2kV SiC half bridge intelligent power module utilizing 80μm flexible epoxy-resin as substrates instead of traditional Direct-bonded Copper, for better thermal-stress management and lower cost. The investigation on the flexible epoxy-resin material indicates that it has low leakage current even at 250 °C, and high thermal conductivity up to 8 W/mK. No bonding wires are applied in the half bridge power module, instead, double-side solderable SiC MOSFET and diodes are fabricated and utilized for low parasitics and double-side cooling function. To further decrease the entire parasitic inductance on the power loop, a “Stack Structure” is proposed in this work to vertically connect highside and lowside switches with lower interconnection path than traditional power module technology. Simulation indicates that the parasitic inductance on the power loop is less than 1.5 nH. More functionality is achieved by integrating the main power stage with gate driver circuits. Digital isolations are also included in the half bridge module, together with a Low Dropout regulator to eliminate the numbers of auxiliary power supply required by the power module. The size of the entire module is about 35mm × 15mm ×7mm. Electrical simulations and measurements, including leakage current, parasitic extractions, device characteristics, verified that the designed module can work properly with no degradation on the SiC devices, with 12ns turn-off and 48ns turn-on at 800V bus voltage, and 0.63 mJ, 0.23 mJ as turn-on and turn-off loss, respectively.}, note={\urlhttps://ieeexplore.ieee.org/document/8096700/}, journal={2017 IEEE Energy Conversion Congress and Exposition (ECCE)}, publisher={IEEE}, author={Zhao, Xin and Gao, Bo and Jiang, Yifan and Zhang, Liqi and Wang, Sizhen and Xu, Yang and Nishiguchi, Kenji and Fukawa, Yoshi and Hopkins, Douglas C.}, year={2017}, month={Oct}, pages={4011–4018} }
 @article{zhao_jiang_gao_nishiguchi_fukawa_hopkins_2017, title={Novel Polymer Substrate-Based 1.2 kV/40 A Double-Sided Intelligent Power Module}, ISSN={["0569-5503"]}, url={https://www.lens.org/011-940-927-881-704}, DOI={10.1109/ectc.2017.285}, abstractNote={Advanced power module packaging technology is currently being heavily investigated to take full advantage of Wide Band Gap (WBG) power semiconductor devices. As one of most widely applied power module technologies, intelligent power modules, typically for automotive industries, work well to achieve higher operating frequencies with lower losses by integrating gate driver circuits with power semiconductor devices. In this paper, a novel flexible polymer substrate-based intelligent power module is developed and characterized. By applying 80 µm-thick epoxy-resin based flexible dielectric as a substrate, the overall weight and volume of the power module is reduced, as well as the cost, compared with traditional direct bonded copper ceramic-based modules. The performance of the epoxy-resin based dielectric is investigated, and shows that the leakage current of the dielectric at >1.5 kV is less than 20 µA at 250 oC. Double-sided solderable 1.2 kV SiC MOSFETs and Schottky diodes are fabricated and applied in the module without bonding wires, significantly reducing the overall parasitic inductance to}, note={\urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7999873 ; \urlhttp://xplorestaging.ieee.org/ielx7/7998598/7999654/07999873.pdf?arnumber=7999873}, journal={2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017)}, author={Zhao, Xin and Jiang, Yifan and Gao, Bo and Nishiguchi, Kenji and Fukawa, Yoshi and Hopkins, Douglas C.}, year={2017}, pages={1461–1467} }
 @article{cai_bodle_mathieu_amos_hamouda_bernacki_mccarty_loboa_2017, title={Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells}, volume={31}, ISSN={["1530-6860"]}, DOI={10.1096/fj.201600560r}, abstractNote={In this study, we report for the first time that the primary ciliumacts as a crucial sensor for electrical field stimulation (EFS)–enhanced osteogenic response in osteoprogenitor cells. In addition, primary cilia seem to functionally modulate effects of EFS‐induced cellular calciumoscillations. Primary cilia are organelles that have recently been implicated to play a crucial sensor role for many mechanical and chemical stimuli on stem cells. Here, we investigate the role of primary cilia in EFS‐enhanced osteogenic response of human adipose‐derived stem cells (hASCs) by knocking down 2 primary cilia structural proteins, polycystin‐1 and intra flagellar protein‐88. Our results indicate that structurally integrated primary cilia are required for detection of electrical field signals in hASCs. Further more, by measuring changes of cytoplasmic calcium concentration in hASCs during EFS, our findings also suggest that primary ciliamay potentially function as a crucial calcium‐signaling nexus in hASCs during EFS.—Cai, S., Bodle, J. C., Mathieu, P. S., Amos, A., Hamouda, M., Bernacki, S., McCarty, G., Loboa, E. G. Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose‐derived stem cells. FASEB J. 31, 346–355 (2017) www.fasebj.org}, number={1}, journal={FASEB JOURNAL}, author={Cai, Shaobo and Bodle, Josephine C. and Mathieu, Pattie S. and Amos, Alison and Hamouda, Mehdi and Bernacki, Susan and McCarty, Greg and Loboa, Elizabeth G.}, year={2017}, month={Jan}, pages={346–355} }