@inproceedings{guo_zhang_lei_li_yu_huang_2016, title={Design and application of a 1200V ultra-fast integrated silicon carbide MOSFET module}, DOI={10.1109/apec.2016.7468151}, abstractNote={With the commercial introduction of wide bandgap power devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency power electronics applications have gained more attention. The fast switching speed and high temperature features of SiC MOSFET break the limit of the traditional silicon MOSFET. However, the EMI problem under high dI/dt and dV/dt is an unneglectable problem. The overshoot and oscillation on drain-source voltage and gating signal could cause breakdown of the switches. This paper proposes a 1200V integrated SiC MOSFET module. With the ultra-fast gate driver integrated with the SiC MOSFET, the parasitic inductance and capacitance could be reduced dramatically, which accordingly suppress the EMI problem caused by the parasitic parameters. Thus zero gate resistance could be adopted in the module to further increase the switching speed. The switching performance of the integrated SiC module is shown better than the discrete package device. The switching loss of the SiC MOSFET module is measured by the inverter level measurement and composition method. Zero switching loss could be achieved when the drain current is lower than a critical value. The module has been tested at 1.5MHz and 3.38MHz switching frequency to prove its high speed capability. For isolated topology applications, the impact of high frequency on the power density and efficiency is discussed in this paper.}, booktitle={Apec 2016 31st annual ieee applied power electronics conference and exposition}, author={Guo, S. X. and Zhang, L. Q. and Lei, Y. and Li, X. and Yu, Wensong and Huang, A. Q.}, year={2016}, pages={2063–2070} }
 @inproceedings{liu_zhang_huang_guo_lei_2016, title={High bandwidth current sensing of sic mosfet with a si current mirror}, DOI={10.1109/wipda.2016.7799937}, abstractNote={SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates the temperature variation as well. The influence of device mismatching on sensing accuracy are discussed. Optimal selection and trade-off of sensing resistor value are calculated. Discrete device circuit and conceptual DBC-based module are tested to verify the scheme's feasibility and performance. The results show good steady state accuracy and high bandwidth performance.}, booktitle={2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (wipda)}, author={Liu, P. K. and Zhang, L. Q. and Huang, A. Q. and Guo, S. X. and Lei, Y.}, year={2016}, pages={200–203} }
 @inproceedings{guo_zhang_lei_li_xue_yu_huang_2015, title={3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive}, DOI={10.1109/wipda.2015.7369298}, abstractNote={With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused by the fast switching is a major constrain for improving switching frequency. For this reason, an integrated SiC module with 1.2kV MOSFET and ultra-fast gate drive circuits is proposed and developed. Two 1.2kV SiC MOSFETs bare dies and two high current gate driver chips are integrated in a compact integrated module package to reduce the parasitic inductance. 0Ω gate resistor therefore can be used in this module to improve the device at maximum speed. Noise free operation of the tested module is verified even under extremely high dV/dt and dI/dt conditions. The ultra-low turn-off loss of the module is being demonstrated. Finally, the integrated module is demonstrated in two megahertz converters: an 800W 1.5MHz synchronous boost converter and a 3.38MHz half bridge inverter. The era for high voltage-megahertz switching has arrived.}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Guo, S. X. and Zhang, L. Q. and Lei, Y. and Li, X. and Xue, F. and Yu, Wensong and Huang, A. Q.}, year={2015}, pages={390–395} }