@article{steckmann_angunawela_kashani_zhu_nahid_ade_gadisa_2022, title={Ultrathin P(NDI2OD-T2) Films with High Electron Mobility in Both Bottom-Gate and Top-Gate Transistors}, volume={3}, ISSN={["2199-160X"]}, url={https://doi.org/10.1002/aelm.202101324}, DOI={10.1002/aelm.202101324}, abstractNote={AbstractUltrathin organic films (typically < 10 nm) attracted great attention due to their (semi)transparency and unique optoelectronic properties that benefit applications such as sensors and flexible electronics. At the core of that, achieving high mobility in an ultrathin film is essential for the efficient operation of relevant electronic devices. While the state‐of‐the‐art material systems, e.g., P(NDI2OD‐T2) also known as N2200 can achieve high mobility in a thin film (typically > 20 nm), multitudinous challenges remain in processing an ultrathin film exhibiting desired charge transport morphology within a preferred thickness limit. Here, high electron mobility (a tenfold increase compared to annealed spin‐coated films) is reported in both the top and bottom‐gate configuration organic field‐effect transistors comprising ultrathin N2200 films produced with a water‐floating film transfer method. A range of characterization techniques are used to investigate these ultrathin films and their microstructure, and conclude that favorable edge‐on polymer orientation at the top as well as throughout the ultrathin film thickness and the quality of π–π ordering as captured by the largest coherences length resulted in this high mobility in N2200 ultrathin films, in stark contrast to the commonly observed microstructural gradient in spin‐coated thin films. The results provide new insight into the electronic and microstructural properties of thin films of organic semiconductors.}, journal={ADVANCED ELECTRONIC MATERIALS}, author={Steckmann, Thomas and Angunawela, Indunil and Kashani, Somayeh and Zhu, Youqin and Nahid, Masrur M. and Ade, Harald and Gadisa, Abay}, year={2022}, month={Mar} } @article{zhu_gadisa_peng_ghasemi_ye_xu_zhao_ade_2019, title={Rational Strategy to Stabilize an Unstable High-Efficiency Binary Nonfullerene Organic Solar Cells with a Third Component}, volume={9}, ISSN={["1614-6840"]}, url={https://doi.org/10.1002/aenm.201900376}, DOI={10.1002/aenm.201900376}, abstractNote={AbstractLong device lifetime is still a missing key requirement in the commercialization of nonfullerene acceptor (NFA) organic solar cell technology. Understanding thermodynamic factors driving morphology degradation or stabilization is correspondingly lacking. In this report, thermodynamics is combined with morphology to elucidate the instability of highly efficient PTB7‐Th:IEICO‐4F binary solar cells and to rationally use PC71BM in ternary solar cells to reduce the loss in the power conversion efficiency from ≈35% to <10% after storage for 90 days and at the same time improve performance. The hypomiscibility observed for IEICO‐4F in PTB7‐Th (below the percolation threshold) leads to overpurification of the mixed domains. By contrast, the hypermiscibility of PC71BM in PTB7‐Th of 48 vol% is well above the percolation threshold. At the same time, PC71BM is partly miscible in IEICO‐4F suppressing crystallization of IEICO‐4F. This work systematically illustrates the origin of the intrinsic degradation of PTB7‐Th:IEICO‐4F binary solar cells, demonstrates the structure–function relations among thermodynamics, morphology, and photovoltaic performance, and finally carries out a rational strategy to suppress the degradation: the third component needs to have a miscibility in the donor polymer at or above the percolation threshold, yet also needs to be partly miscible with the crystallizable acceptor.}, number={20}, journal={ADVANCED ENERGY MATERIALS}, publisher={Wiley}, author={Zhu, Youqin and Gadisa, Abay and Peng, Zhengxing and Ghasemi, Masoud and Ye, Long and Xu, Zheng and Zhao, Suling and Ade, Harald}, year={2019}, month={May} } @article{vassh_vogt_surman_randrup_sprouse_mumpower_jaffke_shaw_holmbeck_zhu_et al._2019, title={Using excitation-energy dependent fission yields to identify key fissioning nuclei in r-process nucleosynthesis}, volume={46}, ISSN={["1361-6471"]}, DOI={10.1088/1361-6471/ab0bea}, abstractNote={We evaluate the impact of using sets of fission yields given by the GEF code for spontaneous (sf), neutron-induced ((n,f)), and beta-delayed (betadf) fission processes which take into account the approximate initial excitation energy of the fissioning compound nucleus. We further explore energy-dependent fission dynamics in the r process by considering the sensitivity of our results to the treatment of the energy sharing and de-excitation of the fission fragments using the FREYA code. We show that the asymmetric-to-symmetric yield trends predicted by GEF can reproduce the high-mass edge of the second r-process peak seen in solar data and examine the sensitivity of this result to the mass model and astrophysical conditions applied. We consider the effect of fission yields and barrier heights on the nuclear heating rates used to predict kilonova light curves. We find that fission barriers influence the contribution of 254Cf spontaneous fission to the heating at ~100 days, such that a light curve observation consistent with such late-time heating would both confirm that actinides were produced in the event and imply the fission barriers are relatively high along the 254Cf beta-feeding path. We lastly determine the key nuclei responsible for setting the r-process abundance pattern by averaging over thirty trajectories from a 1.2--1.4 M_odot neutron star merger simulation. We show it is largely the odd-N nuclei undergoing (Z,N)(n,f) and (Z,N)betadf that control the relative abundances near the second peak. We find the "hot spots" for beta-delayed and neutron-induced fission given all mass models considered and show most of these nuclei lie between the predicted N=184 shell closure and the location of currently available experimental decay data.}, number={6}, journal={JOURNAL OF PHYSICS G-NUCLEAR AND PARTICLE PHYSICS}, author={Vassh, N. and Vogt, R. and Surman, R. and Randrup, J. and Sprouse, T. M. and Mumpower, M. R. and Jaffke, P. and Shaw, D. and Holmbeck, E. M. and Zhu, Y. and et al.}, year={2019}, month={Jun} }