Zachary A. Bryan

Graziano, M. B., Bryan, I., Bryan, Z., Kirste, R., Tweedie, J., Collazo, R., & Sitar, Z. (2019). Structural characteristics of m-plane AlN substrates and homoepitaxial films. JOURNAL OF CRYSTAL GROWTH, 507, 389–394. https://doi.org/10.1016/j.jcrysgro.2018.07.012

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017). High free carrier concentration in p-GaN grown on AlN substrates. APPLIED PHYSICS LETTERS, 111(3). https://doi.org/10.1063/1.4995239

Haidet, B. B., Sarkar, B., Reddy, P., Bryan, I., Bryan, Z., Kirste, R., … Sitar, Z. (2017). Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN. JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10). https://doi.org/10.7567/jjap.56.100302

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016). Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. JOURNAL OF APPLIED PHYSICS, 120(18). https://doi.org/10.1063/1.4967397

Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. (2016). Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides. JOURNAL OF CRYSTAL GROWTH, 438, 81–89. https://doi.org/10.1016/j.jcrysgro.2015.12.022

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016). The role of surface kinetics on composition and quality of AlGaN. JOURNAL OF CRYSTAL GROWTH, 451, 65–71. https://doi.org/10.1016/j.jcrysgro.2016.06.055

Lamprecht, M., Grund, C., Neuschl, B., Thonke, K., Bryan, Z., Collazo, R., & Sitar, Z. (2016). Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state. JOURNAL OF APPLIED PHYSICS, 119(15). https://doi.org/10.1063/1.4946828

Haidet, B. B., Bryan, I., Reddy, P., Bryan, Z., Collazo, R., & Sitar, Z. (2015). A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN. JOURNAL OF APPLIED PHYSICS, 117(24). https://doi.org/10.1063/1.4923062

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., … Sitar, Z. (2015). Charge neutrality levels, barrier heights, and band offsets at polar AlGaN. APPLIED PHYSICS LETTERS, 107(9). https://doi.org/10.1063/1.4930026

Kirste, R., Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015). Electronic Biosensors Based on III-Nitride Semiconductors. ANNUAL REVIEW OF ANALYTICAL CHEMISTRY, VOL 8, Vol. 8, pp. 149–169. https://doi.org/10.1146/annurev-anchem-071114-040247

Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., … Sitar, Z. (2015, May). Growth and characterization of AlxGa1-xN lateral polarity structures. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, pp. 1039–1042. https://doi.org/10.1002/pssa.201431740

Bryan, Z., Bryan, I., Xie, J., Mita, S., Sitar, Z., & Collazo, R. (2015). High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates. APPLIED PHYSICS LETTERS, 106(14). https://doi.org/10.1063/1.4917540

Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., … Sitar, Z. (2015). KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode. APPLIED PHYSICS LETTERS, 106(8). https://doi.org/10.1063/1.4913705

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2015). Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties. AIP ADVANCES, 5(9). https://doi.org/10.1063/1.4930192

Bryan, Z., Bryan, I., Mita, S., Tweedie, J., Sitar, Z., & Collazo, R. (2015). Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates. APPLIED PHYSICS LETTERS, 106(23). https://doi.org/10.1063/1.4922385

Rohrbaugh, N., Bryan, I., Bryan, Z., Arellano, C., Collazo, R., & Ivanisevic, A. (2014). AlGaN/GaN field effect transistors functionalized with recognition peptides. Applied Physics Letters, 105(13).

Rohrbaugh, N., Bryan, I., Bryan, Z., Collazo, R., & Ivanisevic, A. (2014). Effects of Environmental Exposure on Stability and Conductance Poly-l-lysine Coated AlGaN/GaN High Electron Mobility Transistors. WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, Vol. 61, pp. 147–151. https://doi.org/10.1149/06104.0147ecst

Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. (2014). Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films. JOURNAL OF APPLIED PHYSICS, 115(13). https://doi.org/10.1063/1.4870284

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014). Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. APPLIED PHYSICS LETTERS, 105(22). https://doi.org/10.1063/1.4903058

Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., … Sitar, Z. (2014). HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties. JOURNAL OF CRYSTAL GROWTH, 394, 55–60. https://doi.org/10.1016/j.jcrysgro.2014.02.020

Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. (2014). Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition. JOURNAL OF APPLIED PHYSICS, 116(13). https://doi.org/10.1063/1.4897233

Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., … Sitar, Z. (2014). Properties of AlN based lateral polarity structures. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, Vol. 11, pp. 261–264. https://doi.org/10.1002/pssc.201300287

Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., … Sitar, Z. (2014). Sapphire decomposition and inversion domains in N-polar aluminum nitride. APPLIED PHYSICS LETTERS, 104(3). https://doi.org/10.1063/1.4862982

Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. (2014). Schottky contact formation on polar and non-polar AlN. JOURNAL OF APPLIED PHYSICS, 116(19). https://doi.org/10.1063/1.4901954

Guo, W., Bryan, Z., Xie, J., Kirste, R., Mita, S., Bryan, I., … Sitar, Z. (2014). Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. JOURNAL OF APPLIED PHYSICS, 115(10). https://doi.org/10.1063/1.4868678

Bryan, I., Akouala, C.-R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014). Surface preparation of non-polar single-crystalline AlN substrates. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457. https://doi.org/10.1002/pssc.201300401

Reddy, P., Bryan, I., Bryan, Z., Guo, W., Hussey, L., Collazo, R., & Sitar, Z. (2014). The effect of polarity and surface states on the Fermi level at III-nitride surfaces. JOURNAL OF APPLIED PHYSICS, 116(12). https://doi.org/10.1063/1.4896377

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014). The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN. APPLIED PHYSICS LETTERS, 104(20). https://doi.org/10.1063/1.4878657

Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., … Sitar, Z. (2013). Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements. Journal of Applied Physics, 113(10), 103504. https://doi.org/10.1063/1.4794094

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2013). Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819. https://doi.org/10.1007/s11664-012-2342-9

Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., … Sitar, Z. (2013). Ge doped GaN with controllable high carrier concentration for plasmonic applications. Applied Physics Letters, 103(24), 242107. https://doi.org/10.1063/1.4848555

Xie, J., Mita, S., Bryan, Z., Guo, W., Hussey, L., Moody, B., … Sitar, Z. (2013). Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures. APPLIED PHYSICS LETTERS, 102(17). https://doi.org/10.1063/1.4803689

Sochacki, T., Bryan, Z., Amilusik, M., Collazo, R., Lucznik, B., Weyher, J. L., … Sitar, Z. (2013). Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds. APPLIED PHYSICS EXPRESS, 6(7). https://doi.org/10.7567/apex.6.075504

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013). Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 102(6). https://doi.org/10.1063/1.4792694

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013). Vacancy compensation and related donor-acceptor pair recombination in bulk AlN. APPLIED PHYSICS LETTERS, 103(16). https://doi.org/10.1063/1.4824731

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013). X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN. JOURNAL OF APPLIED PHYSICS, 113(12). https://doi.org/10.1063/1.4798352

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012). On the origin of the 265 nm absorption band in AlN bulk crystals. APPLIED PHYSICS LETTERS, 100(19). https://doi.org/10.1063/1.4717623

Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., … Sitar, Z. (2012). Optical signature of Mg-doped GaN: Transfer processes. PHYSICAL REVIEW B, 86(7). https://doi.org/10.1103/physrevb.86.075207

Guo, W., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Collazo, R., & Sitar, Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. Journal of Applied Physics, 117(11).

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., … Collazo, R. Point defect management in GaN by Fermi-level control during growth. Gallium nitride materials and devices ix, 8986.