Works (1)

Updated: July 5th, 2023 15:40

2015 journal article

Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications

JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166.

co-author countries: United States of America 🇺🇸
author keywords: InGaN; metal organic chemical vapor deposition (MOCVD); relaxation; semibulk
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.