2020 journal article
Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application
ACS APPLIED ELECTRONIC MATERIALS, 2(9), 2730–2738.
author keywords: dilute nitride nanowires; tellurium doping; molecular beam epitaxy (MBE); near-infrared-region photodetector; conductive atomic force microscopy (C-AFM)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: October 26, 2020
Band gap engineering of GaAsSbN nanowires (NWs) grown by Ga-assisted molecular beam epitaxy and demonstration of a Te-doped axial GaAsSbN NW-based Schottky barrier photodetector on p-Si (111) in th...