2021 journal article

Carrier-induced ferromagnetism in two-dimensional magnetically doped semiconductor structures


By: V. Stephanovich*, E. Kirichenko‚ÄČ*, G. Engel*, Y. Semenov n & K. Kim

Source: Web Of Science
Added: October 18, 2021

We show theoretically that the magnetic ions, randomly distributed in a two-dimensional (2D) semiconductor system, can generate a ferromagnetic long-range order via the RKKY interaction. The main physical reason is the discrete (rather than continuous) symmetry of the 2D Ising model of the spin-spin interaction mediated by the spin-orbit coupling of 2D free carriers, which precludes the validity of the Mermin-Wagner theorem. Further, the analysis clearly illustrates the crucial role of the molecular field fluctuations as opposed to the mean field. The developed theoretical model describes the desired magnetization and phase-transition temperature ${T}_{c}$ in terms of a single parameter, namely, the chemical potential $\ensuremath{\mu}$. Our results highlight a pathway to reach the highest possible ${T}_{c}$ in a given material as well as an opportunity to control the magnetic properties externally (e.g., via a gate bias). Numerical estimations show that magnetic impurities such as ${\mathrm{Mn}}^{2+}$ with spins $S=5/2$ can realize ferromagnetism with ${T}_{c}$ close to room temperature.