Khaled Hassan Khafagy

Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates

TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.

Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon

JOM.

Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities

MRS ADVANCES, 4(13), 755–760.

Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, 453–461.