Works (4)
Updated: July 5th, 2023 15:32
2020 article
Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates
TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.
author keywords: Threading dislocations; III-Nitride relaxation; V-pits defects; Thermodynamics modeling
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 23, 2021
2020 journal article
Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon
JOM, 73(1), 293–298.
Source: Web Of Science
Added: November 9, 2020
2019 journal article
Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities
MRS ADVANCES, 4(13), 755–760.
Source: Web Of Science
Added: May 20, 2019
2018 article
Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic
ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, pp. 453–461.
author keywords: Crystal plasticity; Solar cells; Multi-junction photovoltaic
UN Sustainable Development Goal Categories
11. Sustainable Cities and Communities
(Web of Science)
Source: Web Of Science
Added: January 14, 2019
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