2021 journal article

Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon

JOM, 73(1), 293–298.

By: K. Khafagy n, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬
Source: Web Of Science
Added: November 9, 2020

2020 article

Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates

TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.

By: K. Khafagy n, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬
author keywords: Threading dislocations; III-Nitride relaxation; V-pits defects; Thermodynamics modeling
Source: Web Of Science
Added: August 23, 2021

2019 journal article

Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities

MRS ADVANCES, 4(13), 755–760.

By: K. Khafagy*, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬
Source: Web Of Science
Added: May 20, 2019

2018 article

Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, pp. 453–461.

By: K. Khafagy*, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬
author keywords: Crystal plasticity; Solar cells; Multi-junction photovoltaic
Source: Web Of Science
Added: January 14, 2019

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