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Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates
TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS.
By: K. Khafagy, T. Hatem & S. Bedair
Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon
2019 journal article
Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities
MRS ADVANCES, 4(13), 755–760.
2018 conference paper
Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic
ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, 453–461.