2021 journal article
Residual Stress and Ferroelastic Domain Reorientation in Declamped {001} Pb(Zr0.3Ti0.7)O-3 Films
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 68(2), 259–272.
author keywords: Films; Substrates; Residual stresses; Permittivity; X-ray diffraction; Silicon; Electrodes; Domain wall motion; residual stress; substrate clamping; thin films; X-ray diffraction (XRD)
TL;DR:
A novel approach to quantitatively deconstruct the relative permittivity into three contributions (intrinsic, reversible extrinsics, and irreversible extrinsic) was developed using a combination of X-ray diffraction and Rayleigh analysis.
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(Web of Science)
Source: Web Of Science
Added: March 15, 2021
Ferroelectric films are often constrained by their substrates and subject to scaling effects, including suppressed dielectric permittivity. In this work, the thickness dependence of intrinsic and extrinsic contributions to the dielectric properties was elucidated. A novel approach to quantitatively deconstruct the relative permittivity into three contributions (intrinsic, reversible extrinsic, and irreversible extrinsic) was developed using a combination of X-ray diffraction (XRD) and Rayleigh analysis. <italic>In situ</italic> synchrotron XRD was used to understand the influence of residual stress and substrate clamping on the domain state, ferroelastic domain reorientation, and electric field-induced strain. For tetragonal {001} textured Pb<sub>0.99</sub>(Zr<sub>0.3</sub>Ti<sub>0.7</sub>)<sub>0.98</sub>Nb<sub>0.02</sub>O<sub>3</sub> thin films clamped to an Si substrate, a thickness-dependent in-plane tensile stress developed during processing, which dictates the domain distribution over a thickness range of 0.27–<inline-formula> <tex-math notation="LaTeX">$1.11~\mu \text{m}$ </tex-math></inline-formula>. However, after the films were partially declamped from the substrate and annealed, the residual stress was alleviated. As a result, the thickness dependence of the volume fraction of <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-domains largely disappeared, and the out-of-plane lattice spacings (<inline-formula> <tex-math notation="LaTeX">${d}$ </tex-math></inline-formula>) for both <inline-formula> <tex-math notation="LaTeX">${a}$ </tex-math></inline-formula>- and <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-domains increased. The volume fraction of <inline-formula> <tex-math notation="LaTeX">${c}$ </tex-math></inline-formula>-domains was used to calculate the intrinsic relative permittivity. The reversible Rayleigh coefficient was then used to separate the intrinsic and reversible extrinsic contributions. The reversible extrinsic response accounted for ~50% of the overall relative permittivity (measured at 50 Hz and alternating current (ac) field of <inline-formula> <tex-math notation="LaTeX">$0.5\cdot {E}_{c}$ </tex-math></inline-formula>) and was thickness dependent even after poling and upon release.