2014 journal article

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

OPTICS LETTERS, 39(6), 1501–1504.

By: G. You*, J. Liu *, Z. Jiang *, L. Wang *, N. El-Masry n, A. Hosalli n, S. Bedair n, J. Xu *

TL;DR: The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells conformally grown over n-GaN nanowires (NWs) was studied and a reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency. (via Semantic Scholar)
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Source: Web Of Science
Added: August 6, 2018

The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.