Works (2)

2008 article

Comparison of static and switching characteristics of 1200 V 4H-SiCBJT and 1200 V Si-IGBT

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 44, pp. 887–893.

By: Y. Gao n, A. Huang, S. Krishnaswami*, J. Richmond* & A. Agarwal*

author keywords: loss; reverse-biased safe operating area (RBSOA); Si insulated gate bipolar transistor (IGBT); silicon carbide bipolar junction transistor (SiC BJT)
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Susceptibility of parent and interspecific F1 hybrid pine trees to tip moth damage in a coastal North Carolina planting

CANADIAN JOURNAL OF FOREST RESEARCH-REVUE CANADIENNE DE RECHERCHE FORESTIERE, 31(5), 919–923.

By: M. Highsmith, J. Frampton, . D O'Malley, J. Richmond & M. Webb

Source: Web Of Science
Added: August 6, 2018