Yanxia Lin

Works (1)

Updated: July 5th, 2023 15:56

2005 article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

Lin, Y., Öztürk, M. C., Chen, B., Rhee, S. J., Lee, J. C., & Misra, V. (2005, August 5). Applied Physics Letters, Vol. 87.

By: Y. Lin n, M. Öztürk n, B. Chen n, S. Rhee*, J. Lee * & V. Misra n 

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Advancements in Semiconductor Devices and Circuit Design
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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