2005 journal article

Impact of Ge on integration of HfO2 and metal gate electrodes on strained Si channels

APPLIED PHYSICS LETTERS, 87(7).

By: Y. Lin n, M. Ozturk n, B. Chen n, S. Rhee*, J. Lee* & V. Misra n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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